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2SJ377
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TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (L −π−MOSV)
2SJ377
Relay Drive, DC/DC Converter and Motor Drive
Unit: mm
Applications 6.5 ± 0.2
1.5 ± 0.2
5.2 ± 0.2 0.6 MAX.
z 4 V gate drive
z Low drain-source ON-resistance : RDS (ON) = 0.16 Ω (typ.)
5.5 ± 0.2
z High forward transfer admittance : |Yfs| = 4.0 S (typ.)
1.2 MAX.
9.5 ± 0.3
z Low leakage current : IDSS = −100 μA (max) (VDS = −60 V)
1.1 ± 0.2
z Enhancement mode : Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
0.8 MAX. 0.6 MAX.
1.05 MAX.
0.6 ± 0.15
Absolute Maximum Ratings (Ta = 25°C)
2.3 ± 0.2
1 2 3
0.1 ± 0.1
Characteristic Symbol Rating Unit
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
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Electrical Characteristics (Ta = 25°C)
Rise time tr — 25 —
Fall time tf — 55 —
Marking
Note 4 : A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
J377 Part No.
Please contact your TOSHIBA sales representative for details as to
Lot No. environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2002/95/EC of the European Parliament and
Note 4 of the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
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