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SKiiP 25AC126V1
Characteristics 0 (' 12
!
Symbol Conditions min. typ. max. Units
IGBT - Inverter
Target Data ,$ 0 '4 2 = 0 (' 6.('8 1 .27 6(8 (2. 6(2;8 ,
,$68 ,$ 0 ,$2 0 ( - ' '2* %2' ,
,$6 B8 = 0 (' 1 6.('8 1 . 642@8 .2( 6.2.8 ,
Features
= 0 (' 1 6.('8 1 .; 6((8 .* 6(%8 -C
,$ 0 (' ,$ 0 4 ,2 0 . 9 D &27
,$ 0 (' ,$ 0 4 ,2 0 . 9 D 42*
,$ 0 (' ,$ 0 4 ,2 0 . 9 D 427
6=>8 !
42'' EA/
!
68
*'
, 0 %44 ,2 ,$ 0 < .' , &4
"
# $%&'&(
68 0 '4 2 = 0 .(' 1 ;&4
Typical Applications 0 0 .( C @4
$
) %2' -F
)
! (* +, $ %2. -F
!
-
!
.' +/
Diode - Inverter
, 0 ,$ 0 '4 2 = 0 (' 6.('8 1 .2% 6.2%8 .2* 6.2*8 ,
,6 B8 = 0 (' 1 6.('8 1 . 642*8 .2. 642@8 ,
= 0 (' 1 6.('8 1 .( 6.%8 .; 6.*8 -C
6=>8 !
42@' EA/
9
7.
G
Mechanical data
- %'
9 9
J ( (2' K-
AC
Fig. 1 Typ. output characteristic Fig. 2 Typ. rated current vs. temperature
Fig. 3 Typ. transfer characteristic Fig. 4 Reverse bias safe operating area
Fig. 5 Typ. Turn-on /-off energy = f (IC) Fig. 6 Typ. Turn-on /-off energy = f (RG)
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.