SCHOOL OF BASIC SCIENCES AND RESEARCH, SHARDA

UNIVERSITY PHYSICS
LABORATORY MANUAL
Experiment title: To determine the energy band gap of a semiconductor
using four probe method. Expt. No.1

Objective: To determine the energy band gap of a semiconductor using four

probe method.

Apparatus used: Probes arrangement, Germanium sample, Oven, a constant

current generator, milli voltmeter, and thermometer.

FORMULA USED:
ρ0 = (V/I) x2πS

ρ = ρ0 /5.89 { F(W/S) =5.89 }

loge ρ = Eg/2kt
or Eg = 2kt (2.3026 log10 ρ )

Theory:The four probe technique is based on the following assumptions:

1. The surface of the sample on which the four electrodes probe rest is flat,
uniform, having no leakage, adequately large and crystal should be of big
size.

2. The spring type contacts between the probes are point contacts and lie in a
straight line.

3. The resistivity of the crystal is considered to be uniform in the area of

measurement.

4. The bottom surface of the sample chip in non-conducting.

5. The contacts between the probes and the surface are point contacts.

6. The thickness of the sample in chip shape sample should be less than the
half the distance between the probes or probe spacing.

7. If there is minority carrier injection into the semi-conductors by current

carrying electrode probes most of the carrier recombine near the electrode
probes so that there effect on the conductivity become negligible.
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Now, if current I is passed through the outer probes and V the potential difference
measured across the inner probes, then the resistivity of the sample is given by
ρ0 = (V/I) x2πS
where S is the distance between the two successive probes. As the thickness is
very small compared to the probe distance the above equation is not applicable
directly, but a correction factor for it is to be applied. For a thin slice non-
conducting bottom surface, the resistivity may be expressed as
ρ = ρ0 /5.89 { F(W/S) =5.89 }

Where W is the thickness of the semi-conducting material and S the probe

spacing. For the given sample, the value of F(W/S) is 5.89. We know that the
forbidden energy band gap Eg of semi-conductor is related with the resistivity as
loge ρ = Eg/2kt
or Eg = 2kt (2.3026 log10 ρ )

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Where k is the Boltzmann’s constant equal to 8.6 x 10 eV/deg. Thus the slope of
3
the graph between log10 and 10 /T gives Eg/2k. Thus, the determination of energy
3
band gap involves the plotting of a graph between log 10ρ and 10 /T and calculating
its slope.
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Procedure:
 Refer to figure:
1. Connect outer pair of probes to direct current source through milli ammeter
and other pair to milli voltmeter.
2. Switch on the constant current source and adjust current I to a desired value,
say 8mA.
3. Place four-probe arrangement in the oven. Fix the thermometer.
4. Connect the oven power supply and start heating.
5. Measure the inner probe voltage V, for various temperatures (at the interval
0
of 10 C).

Observation table:

Thickness of the crystal W = 0.5 mm

The distance between the probes S = 2 mm
Value of current I = ….. mA

3
S.No. Temperature Corresponding Resistivity Corrected Log10 ρ 10 /T
of the voltage V ρ0 (ohm- resistivity
sample (in (volts) cm) ρ (ohm-
Kelvin) cm)

3
CALCULATION: Eg= 0.396 × (slope of the graph between log 10 and 10 /T) eV.

Standard value of Eg= 0.7 eV.

RESULT: Forbidden energy band gap for semi-conductor (germanium) is = …..eV

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Percentage Error:

PRECAUTIONS:
1. The sample should be placed with non-conducting surface towards bottom.

2. There should be proper contact between the probes and sample crystal
surface.
3. Current should be constant for one set of observation.
4. The current through the sample should not be large enough to cause
heating.

Theoretical Error:

Energy Band gap Eg = 2kT logeρ

Taking log
log Eg = logk + logT + log (logeρ)
and differentiating
δEg/Eg = δk/k + δT/T + δ(logeρ)/ logeρ
= …….. %

OUTCOME:

Student will learn the concept of band gap in semiconductor and how the resistivity
depends on temperature.

TRY TO ANSWER:
1. How are the bands formed in the solids?
2. What do you mean by valence band, conduction band and forbidden gap?

3. How do you differentiate between a conductor, an insulator and a semi-

conductor in relation to energy gap?
4. What do you mean by intrinsic and extrinsic semi-conductors?
5. What is depletion layer in a p-n junction?
6. What are the approximate values of band gap in case of conductor,
insulator and semi-conductor?
7. Why do we use spring type contacts in case of four probe method?
8. Why the four probe method is better than other methods for measuring
resistivity?
9. How does the resistivity of a semiconductor changes with the change in
temperature?
10.Does the resistivity change with the change of the size of the sample
crystal?
Prepared by MUNENDRA SINGH & MOHIT SAHNI