DISCRETE SEMICONDUCTORS

DATA SHEET

PMMT491A
NPN BISS transistor
Product data sheet 2004 Jan 13
Supersedes data of 2001 Jun 11
NXP Semiconductors Product data sheet

NPN BISS transistor PMMT491A

FEATURES PINNING
• High current (max. 1 A) PIN DESCRIPTION
• Low collector-emitter saturation voltage ensures 1 base
reduced power consumption.
2 emitter
3 collector
APPLICATIONS
• Battery powered units where high current and low power
consumption are important.

DESCRIPTION handbook, halfpage

3
3
NPN BISS (Breakthrough In Small Signal) transistor in a
SOT23 plastic package. PNP complement: PMMT591A.
1

MARKING
2
1 2
TYPE NUMBER MARKING CODE(1)
Top view MAM255
PMMT491A 9A*

Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia. Fig.1 Simplified outline (SOT23) and symbol.
* = W : Made in China.

ORDERING INFORMATION

TYPE PACKAGE
NUMBER NAME DESCRIPTION VERSION
PMMT491A − plastic surface mounted package; 3 leads SOT23

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter − 40 V
VCEO collector-emitter voltage open base − 40 V
VEBO emitter-base voltage open collector − 5 V
IC collector current (DC) − 1 A
ICM peak collector current − 2 A
IBM peak base current − 1 A
Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 250 mW
Tstg storage temperature −65 +150 °C
Tj junction temperature − 150 °C
Tamb operating ambient temperature −65 +150 °C

Note
1. Transistor mounted on an FR4 printed-circuit board.

2004 Jan 13 2
NXP Semiconductors Product data sheet

NPN BISS transistor PMMT491A

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction to ambient note 1 500 K/W

Note
1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

ICBO collector cut-off current IE = 0; VCB = 30 V − 100 nA
ICEO collector cut-off current IB = 0; VCE = 30 V − 100 nA
IEBO emitter cut-off current IC = 0; VEB = 5 V − 100 nA
hFE DC current gain VCE = 5 V; note 1
IC = 1 mA 300 −
IC = 500 mA 300 900
IC = 1 A 200 −
VCEsat collector-emitter saturation voltage note 1
IC = 100 mA; IB = 1 mA − 200 mV
IC = 500 mA; IB = 50 mA − 300 mV
IC = 1 A; IB = 100 mA − 500 mV
VBEsat base-emitter saturation voltage IC = 1 A; IB = 100 mA; note 1 − 1.2 V
VBE base-emitter voltage VCE = 5 V; IC = 1 A; note 1 − 1.1 V
Cc collector capacitance IE = Ie = 0; VCB = 10 V; f = 1 MHz − 10 pF
fT transition frequency IC = 50 mA; VCE = 10 V; f = 100 MHz 150 − MHz

Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

2004 Jan 13 3
NXP Semiconductors Product data sheet

NPN BISS transistor PMMT491A

MLD642 MLD635
1000 10
handbook, halfpage handbook, halfpage
hFE

800
(1) VBE
(V)

600
(2)
1 (1)

400 (2)

(3)
(3)
200

0 10−1
10−1 1 10 102 103 104 10−1 1 10 102 103 104
IC (mA) IC (mA)

VCE = 5 V. VCE = 5 V.
(1) Tamb = 150 °C. (1) Tamb = −55 °C.
(2) Tamb = 25 °C. (2) Tamb = 25 °C.
(3) Tamb = −55 °C. (3) Tamb = 150 °C.

Fig.2 DC current gain as a function of collector Fig.3 Base-emitter voltage as a function of

current; typical values. collector current; typical values.

MLD636 MLD637
103 400
handbook, halfpage handbook, halfpage
fT
VCEsat
(MHz)
(mV)
300
(1)
102

200
(2) (3)

10
100

1 0
1 10 102 103 104 0 200 400 600 800 1000
IC (mA) IC (mA)

IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C. VCE = 10 V.

Fig.4 Collector-emitter saturation voltage as a Fig.5 Transition frequency as a function of

function of collector current; typical values. collector current; typical values.

2004 Jan 13 4
NXP Semiconductors Product data sheet

NPN BISS transistor PMMT491A

PACKAGE OUTLINE

Plastic surface-mounted package; 3 leads SOT23

D B E A X

HE v M A

A1

1 2 c

e1 bp w M B Lp

e
detail X

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A1
UNIT A bp c D E e e1 HE Lp Q v w
max.
1.1 0.48 0.15 3.0 1.4 2.5 0.45 0.55
mm 0.1 1.9 0.95 0.2 0.1
0.9 0.38 0.09 2.8 1.2 2.1 0.15 0.45

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC JEITA PROJECTION

04-11-04
SOT23 TO-236AB
06-03-16

2004 Jan 13 5
NXP Semiconductors Product data sheet

NPN BISS transistor PMMT491A

DATA SHEET STATUS

DOCUMENT PRODUCT
DEFINITION
STATUS(1) STATUS(2)
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.

Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.

DISCLAIMERS above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for
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extended periods may affect device reliability.
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Quick reference data ⎯ The Quick reference data is an
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extract of the product data given in the Limiting values and
Applications ⎯ Applications that are described herein for Characteristics sections of this document, and as such is
any of these products are for illustrative purposes only. not complete, exhaustive or legally binding.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions

2004 Jan 13 6
 NXP Semiconductors

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This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.

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Printed in The Netherlands R75/05/pp7 Date of release: 2004 Jan 13 Document order number: 9397 750 12528