DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D109

PBSS5350X
50 V, 3 A
PNP low VCEsat (BISS) transistor
Product specification 2003 Nov 21
Supersedes data of 2003 Jun 24
Philips Semiconductors Product specification

50 V, 3 A
PBSS5350X
PNP low VCEsat (BISS) transistor

FEATURES QUICK REFERENCE DATA

• SOT89 (SC-62) package SYMBOL PARAMETER MAX. UNIT
• Low collector-emitter saturation voltage VCEsat VCEO collector-emitter voltage −50 V
• High collector current capability: IC and ICM IC collector current (DC) −3 A
• Higher efficiency leading to less heat generation ICM peak collector current −5 A
• Reduced printed-circuit board requirements. RCEsat equivalent on-resistance 135 mΩ

APPLICATIONS PINNING
• Power management
PIN DESCRIPTION
– DC/DC converters
1 emitter
– Supply line switching
2 collector
– Battery charger
3 base
– LCD backlighting.
• Peripheral drivers
– Driver in low supply voltage applications (e.g. lamps
and LEDs).
handbook, halfpage
– Inductive load driver (e.g. relays, 2
buzzers and motors).
3

DESCRIPTION
1
PNP low VCEsat transistor in a SOT89 plastic package.
NPN complement: PBSS4350X. 1 2 3

Bottom view MAM297

MARKING

TYPE NUMBER MARKING CODE

Fig.1 Simplified outline (SOT89) and symbol.
PBSS5350X S46

2003 Nov 21 2
Philips Semiconductors Product specification

50 V, 3 A
PBSS5350X
PNP low VCEsat (BISS) transistor

ORDERING INFORMATION

PACKAGE
TYPE NUMBER
NAME DESCRIPTION VERSION
PBSS5350X − plastic surface mounted package; collector pad for good heat SOT89
transfer; 6 leads

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter − −50 V
VCEO collector-emitter voltage open base − −50 V
VEBO emitter-base voltage open collector − −5 V
IC collector current (DC) note 4 − −3 A
ICM peak collector current limited by Tj max − −5 A
IB base current (DC) − −0.5 A
Ptot total power dissipation Tamb ≤ 25 °C
note 1 − 550 mW
note 2 − 1 W
note 3 − 1.4 W
note 4 − 1.6 W
Tj junction temperature − 150 °C
Tamb operating ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C

Notes
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pad for collector 1 cm2.
3. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pad for collector 6 cm2.
4. Device mounted on a ceramic printed-circuit board 7 cm2, single-sided copper, tinplated.

2003 Nov 21 3
Philips Semiconductors Product specification

50 V, 3 A
PBSS5350X
PNP low VCEsat (BISS) transistor

MLE186
2
handbook, halfpage
Ptot
(W)
(1)
1.6
(2)

1.2
(3)

0.8

(4)

0.4

0
0 40 80 120 160
Tamb (°C)

(1) Ceramic PCB; 7 cm2 (3) FR4 PCB; 1 cm2 copper

mounting pad for collector. mounting pad for collector.
(2) FR4 PCB; 6 cm2 copper (4) Standard footprint.
mounting pad for collector.

Fig.2 Power derating curves.

2003 Nov 21 4
Philips Semiconductors Product specification

50 V, 3 A
PBSS5350X
PNP low VCEsat (BISS) transistor

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient in free air
note 1 225 K/W
note 2 125 K/W
note 3 90 K/W
note 4 80 K/W
Rth-js thermal resistance from junction to soldering point 16 K/W

Notes
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pad for collector 1 cm2.
3. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pad for collector 6 cm2.
4. Device mounted on a ceramic printed-circuit board 7 cm2, single-sided copper, tinplated.

MLE373
103
handbook, full pagewidth

Zth
(K/W)

(1)
102
(2)
(3)
(4)
(5)

(6)
10
(7)

(8)

(9) tp
P δ=
T
1
(10)

tp t
T
10−1
10−5 10−4 10−3 10−2 10−1 1 10 102 103
tp (s)

Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2.

(1) δ = 1. (3) δ = 0.5. (5) δ = 0.2. (7) δ = 0.05. (9) δ = 0.01.

(2) δ = 0.75. (4) δ = 0.33. (6) δ = 0.1. (8) δ = 0.02. (10) δ = 0.

Fig.3 Transient thermal impedance as a function of pulse time; typical values.

2003 Nov 21 5
Philips Semiconductors Product specification

50 V, 3 A
PBSS5350X
PNP low VCEsat (BISS) transistor

CHARACTERISTICS
Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector cut-off current VCB = −50 V; IE = 0 − − −100 nA
VCB = −50 V; IE = 0; Tj = 150 °C − − −50 µA
ICES collector cut-off current VCE = −50 V; VBE = 0 − − −100 nA
IEBO emitter cut-off current VEB = −5 V; IC = 0 − − −100 nA
hFE DC current gain VCE = −2 V
IC = −0.1 A 200 − −
IC = −0.5 A 200 − −
IC = −1 A; note 1 200 − 450
IC = −2 A; note 1 130 − −
IC = −3 A; note 1 80 − −
VCEsat collector-emitter saturation IC = −0.5 A; IB = −50 mA − − −90 mV
voltage IC = −1 A; IB = −50 mA − − −180 mV
IC = −2 A; IB = −100 mA − − −320 mV
IC = −2 A; IB = −200 mA; note 1 − − −270 mV
IC = −3 A; IB = −300 mA; note 1 − − −390 mV
RCEsat equivalent on-resistance IC = −2 A; IB = −200 mA; note 1 − 90 135 mΩ
VBEsat base-emitter saturation voltage IC = −2 A; IB = −100 mA − − −1.1 V
IC = −3 A; IB = −300 mA; note 1 − − −1.2 V
VBEon base-emitter turn-on voltage VCE = −2 V; IC = −1 A −1.1 − − V
fT transition frequency IC = −100 mA; VCE = −5 V; 100 − − MHz
f = 100 MHz
Cc collector capacitance VCB = −10 V; IE = Ie = 0; f = 1 MHz − − 35 pF

Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.

2003 Nov 21 6
Philips Semiconductors Product specification

50 V, 3 A
PBSS5350X
PNP low VCEsat (BISS) transistor

MLE171 MLE170
600
handbook, halfpage
−1.2
handbook, halfpage
(1)

hFE VBE
(V)
(1)
400 (2) −0.8
(2)

(3)

(3)
200 −0.4

0 0
−10−1 −1 −10 −102 −103 −104 −10−1 −1 −10 −102 −103 −104
IC (mA) IC (mA)

VCE = −2 V. VCE = −2 V.
(1) Tamb = 100 °C. (1) Tamb = −55 °C.
(2) Tamb = 25 °C. (2) Tamb = 25 °C.
(3) Tamb = −55 °C. (3) Tamb = 100 °C.

Fig.4 DC current gain as a function of collector Fig.5 Base-emitter voltage as a function of

current; typical values. collector current; typical values.

MLE173 MLE174
−1 −1
handbook, halfpage handbook, halfpage

VCEsat VCEsat
(V) (V)

−10−1 −10−1
(1)
(2)

(2) (1)

−10−2 −10−2
(3)
(3)

−10−3 −10−3
−10−1 −1 −10 −102 −103 −104 −10−1 −1 −10 −102 −103 −104
IC (mA) IC (mA)

IC/IB = 20. Tamb = 25 °C.

(1) Tamb = 100 °C. (1) IC/IB = 100.
(2) Tamb = 25 °C. (2) IC/IB = 50.
(3) Tamb = −55 °C. (3) IC/IB = 10.

Fig.6 Collector-emitter saturation voltage as a Fig.7 Collector-emitter saturation voltage as a

function of collector current; typical values. function of collector current; typical values.

2003 Nov 21 7
Philips Semiconductors Product specification

50 V, 3 A
PBSS5350X
PNP low VCEsat (BISS) transistor

MLE172
−1.2
MLE175 103
handbook, halfpage handbook, halfpage
RCEsat
VBEsat
(Ω)
(V)
−1 102

(1)

−0.8 10
(2)

(3)
−0.6 1
(1)
(2)
(3)
−0.4 10−1

−0.2 10−2
−10−1 −1 −10 −102 −103 −104 −10−1 −1 −10 −102 −103 −104
IC (mA) IC (mA)

IC/IB = 20.
IC/IB = 20.
(1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C.
(1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C.
Fig.9 Collector-emitter equivalent on-resistance
Fig.8 Base-emitter saturation voltage as a as a function of collector current; typical
function of collector current; typical values. values.

MLE168 MLE169
−1 −5
handbook, halfpage (1) handbook, halfpage (7) (6) (5) (4) (3) (2) (1)
IC IC
(2)
(A) (A)
(3)
−0.8 −4
(4)

(5)
(8)
−0.6 (6) −3
(9)
(7)

−0.4 (8) −2 (10)

(9)

−0.2 −1
(10)

0 0
0 −0.4 −0.8 −1.2 −1.6 −2 0 −0.4 −0.8 −1.2 −1.6 −2
VCE (V) VCE (V)

Tamb = 25 °C. Tamb = 25 °C.

(1) IB = −3500 µA. (5) IB = −2100 µA. (9) IB = −700 µA. (1) IB = −140 mA. (5) IB = −84 mA. (9) IB = −28 mA.
(2) IB = −3150 µA. (6) IB = −1750 µA. (10) IB = −350 µA. (2) IB = −126 mA. (6) IB = −70 mA. (10) IB = −14 mA.
(3) IB = −2800 µA. (7) IB = −1400 µA. (3) IB = −112 mA. (7) IB = −56 mA.
(4) IB = −2450 µA. (8) IB = −1050 µA. (4) IB = −98 mA. (8) IB = −42 mA.

Fig.10 Collector current as a function of Fig.11 Collector current as a function of

collector-emitter voltage; typical values. collector-emitter voltage; typical values.

2003 Nov 21 8
Philips Semiconductors Product specification

50 V, 3 A
PBSS5350X
PNP low VCEsat (BISS) transistor

PACKAGE OUTLINE

Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89

D B

b3

E
HE

L
1 2 3

b2 c

w M b1

e1

0 2 4 mm

scale

DIMENSIONS (mm are the original dimensions)

L
UNIT A b1 b2 b3 c D E e e1 HE w
min.
1.6 0.48 0.53 1.8 0.44 4.6 2.6 4.25
mm 3.0 1.5 0.8 0.13
1.4 0.35 0.40 1.4 0.37 4.4 2.4 3.75

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION

97-02-28
SOT89 TO-243 SC-62
99-09-13

2003 Nov 21 9
Philips Semiconductors Product specification

50 V, 3 A
PBSS5350X
PNP low VCEsat (BISS) transistor

DATA SHEET STATUS

DATA SHEET PRODUCT

LEVEL DEFINITION
STATUS(1) STATUS(2)(3)
I Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

DEFINITIONS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes  Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.

2003 Nov 21 10
Philips Semiconductors – a worldwide company

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825

For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.

© Koninklijke Philips Electronics N.V. 2003 SCA75

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands R75/02/pp11 Date of release: 2003 Nov 21 Document order number: 9397 750 12168