UNISONIC TECHNOLOGIES CO.

, LTD
1N60 Power MOSFET

1.2 Amps, 600 Volts

N-CHANNEL MOSFET 1 TO- 251

DESCRIPTION 1
TO-252
The UTC 1N60 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed 1 TO-220
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
FEATURES
1
TO-220F
* RDS(ON) =9.3Ω@VGS = 10V.
* Ultra Low gate charge (typical 5.0nC) *Pb-free plating product number: 1N60L
* Low reverse transfer capacitance (CRSS = typical 3.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness

SYMBOL

2.Drain

1.Gate

3.Source

ORDERING INFORMATION
Order Number Pin Assignment
Package Packing
Normal Lead Free Plating 1 2 3
1N60-TA3-T 1N60L-TA3-T TO-220 G D S Tube
1N60-TF3-T 1N60L-TF3-T TO-220F G D S Tube
1N60-TM3-T 1N60L-TM3-T TO-251 G D S Tube
1N60-TN3-R 1N60L-TN3-R TO-252 G D S Tape Reel
1N60-TN3-T 1N60L-TN3-T TO-252 G D S Tube
Note: Pin Assignment: G: Gate D: Drain S: Source

1N60L-TA3-T
(1)Packing Type (1) T: Tube, R: Tape Reel

(2)Package Type (2) TA3: TO-220, TF3: TO-220F, TM3: TO-251,

TN 3: TO-252
(3)Lead Plating (3) L: Lead Free Plating, Blank: Pb/Sn

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1N60 Power MOSFET

ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)

PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDSS 600 V
Gate-Source Voltage VGSS ±30 V
Avalanche Current (Note 2) IAR 1.2 A
TC = 25℃ 1.2
Continuous Drain Current ID A
TC = 100℃ 0.76
Drain Current-Pulsed (Note 2) IDP 4.8 A
Repetitive(Note 2) EAR 4.0 mJ
Avalanche Energy
Single Pulse(Note 3) EAS 50 mJ
Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns
TC=25℃ 40 W
Total Power Dissipation PD
Derate above 25°C 0.32 W/℃
Junction Temperature TJ +150 ℃
Storage Temperature TSTG -55 ~ +150 ℃
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
3. L=64mH, IAS=1.2A, VDD=50V, RG=25Ω, Starting TJ =25°C
4. ISD≤1.2A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ =25°C
THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
TO-251 112
Thermal Resistance Junction-Ambient TO-252 θJA 112
TO-220 54
℃/W
TO-251 12
Thermal Resistance Junction-Case TO-252 θJc 12
TO-220 4

ELECTRICAL CHARACTERISTICS (TC=25℃, unless otherwise specified.)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Off Characteristics
Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250Μa 600 V
VDS = 600V, VGS = 0V 10 Μa
Zero Gate Voltage Drain Current IDSS
VDS = 480V, TC = 125℃ 100 Μa
Forward VGS = 30V, VDS = 0V 100 Na
Gate-Body Leakage Current IGSS
Reverse VGS = -30V, VDS = 0V -100
Breakdown Voltage Temperature △BVDSS/
ID = 250Μa 0.4 V/℃
Coefficient △T J
On Characteristics
Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250Μa 2.0 4.0 V
Static Drain-Source On-Resistance RDS(ON) VGS = 10V, ID = 0.6A 9.3 11.5 Ω
Forward Transconductance gFS VDS = 50V, ID = 0.6A (Note 1) 0.9 S
Dynamic Characteristics
Input Capacitance CISS 120 150 Pf
Output Capacitance COSS VDS=25V, VGS=0V, f=1MHz 20 25 Pf
Reverse Transfer Capacitance CRSS 3.0 4.0 Pf

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1N60 Power MOSFET

ELECTRICAL CHARACTERISTICS (Cont.)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Switching Characteristics
Turn-On Delay Time tD (ON) 5 20 ns
Rise Time tR VDD=300V, ID=1.2A, RG=50Ω 25 60 ns
Turn-Off Delay Time tD (OFF) (Note 1,2) 7 25 ns
Fall Time tF 25 60 ns
Total Gate Charge QG 5.0 6.0 nC
VDS=480V, VGS=10V, ID=1.2A
Gate-Source Charge QGS 1.0 nC
(Note 1,2)
Gate-Drain Charge QGD 2.6 nC
Drain-Source Diode Characteristics
Drain-Source Diode Forward Voltage VSD VGS=0V, ISD = 1.2A, 1.4 V
Continuous Drain-Source Current ISD 1.2 A
Pulsed Drain-Source Current ISM 4.8 A
Reverse Recovery Time tRR VGS=0V, ISD = 1.2A 160 ns
Reverse Recovery Charge QRR di/dt = 100A/µs (Note1) 0.3 µC
Note: 1. Pulse Test: Pulse Width ≤300µs, Duty Cycle≤2%
2. Essentially Independent of Operating Temperature

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1N60 Power MOSFET
TEST CIRCUITS AND WAVEFORMS

D.U.T. +

VDS

-
+

- L

RG
Driver VDD
* dv/dt controlled by RG
Same Type * I SD controlled by pulse period
VGS * D.U.T.-Device Under Test
as D.U.T.

Fig. 1A Peak Diode Recovery dv/dt Test Circuit

VGS Period P. W.
D=
(Driver) P.W. Period

VGS= 10V

I FM, Body Diode Forward Current

ISD
(D.U.T.) di/dt

IRM

Body Diode Reverse Current

Body Diode Recovery dv/dt

VDS
(D.U.T.) VDD

Body Diode Forward Voltage Drop

Fig. 1B Peak Diode Recovery dv/dt Waveforms

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1N60 Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)

RL
VDS
VDS 90%

VGS VDD
RG

10%
VGS
10V D.U.T. t D(ON ) tD (OFF)
Pulse Width ≤ 1μs tR tF
Duty Factor ≤0.1%

Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms

Same Type
50kΩ as D.U.T.
QG
12V 10V
0.2μF 0.3μF
VDS
QGS QGD
VGS

DUT
VG
3mA

Charge

Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform

L
VDS

BVDSS

RD
VDD

10V D.U.T.
tp IAS
tp Time

Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms

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1N60 Power MOSFET
TYPICAL PERFORMANCE CHARACTERISTICS

Output Characteristics Transfer Characteristics

V GS
Top: 15.0V
VDS=50V
10 .0V 250μs Pulse Test
8 .0V
Drain Current, I D (A)

100 7 .0V

Drain Current, ID (A)

6 .5V
6 .0V
Bottorm :5.5V
100
125℃
-1
10
25℃
-40℃

250μs Pulse Test

10-2 T C=25℃
10-1
10
-1
10
0
101 2 4 6 8 10

Drain-Source Voltage, VDS (V) Gate-Source Voltage, VGS (V)

On-Resistance vs. Drain Current Source- Drain Diode Forward Voltage

Drain-Source On-Resistance, R DS(ON) (Ω)

30 TJ=25℃
VGS=0V
Reverse Drain Current, IDR (A)

25 250μs Pulse Test

VGS=10V

20 VGS=20V
100
15

10 125℃ 25℃

-1
0 10
0.0 0.5 1.0 1.5 2.0 2.5 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

Drain Current, ID (A) Source-Drain Voltage, VSD (V)

Capacitance vs. Drain-Source Voltage Gate Charge vs. Gate-Source Voltage

200 12
Ciss= CGS+CGD
VDS=120V
Gate-Source Voltage, VGS (V)

(CDS=shorted)
Ciss Coss=C DS+CGD 10 VDS=300V
Capacitance (pF)

150 Crss=CGD VDS=480V

8
Coss
100 6

4
50 Crss
VGS=0V 2
f = 1MHz I D=1.2A
0 0
-1 0 1 2
10 10 10 0 1 3 4 5

VDS, Drain-SourceVoltage (V) Total Gate Charge, QG (nC)

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1N60 Power MOSFET
TYPICAL PERFORMANCE CHARACTERISTICS(cont.)

Breakdown Voltage vs. Temperature On-Resistance vs. Temperature

1.2 V =0V 3.0

VGS=10V
Drain-Source Breakdown Voltage,

GS

Drain-Source On-Resistance,
ID=250μA ID=0.6A
2.5

R DS(ON) (Normalized)
1.1
BVDSS, (Normalized)

2.0

1.0 1.5

1.0
0.9
0.5

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200

Junction Temperature, T J (℃) Junction Temperature, T J (℃)

Max. Safe Operating Area Max. Drain Current vs. Case Temperature

1.2
Operation in This Area
101 is Limited by RDS(on)
Drain Current, ID (A)

0.9
Drain Current, ID (A)

100μs
1ms
100 10ms
0.6
DC

-1
10 0.3
T c=25℃
T J=150℃
-2 Single Pulse
10 0.0
0 1 3
10 10 102 10 25 50 75 100 125 150
Drain-Source Voltage, VDS (V) Case Temperature, T C (℃)

Thermal Response
Thermal Response, θJC (t)

D=0.5
100
0.2 θJC (t) = 3.13℃/W Max.
Duty Factor, D=t1/t2
0.1 5 TJM -TC=PDM×θJC (t)
0 .0
2
-1
0.0
10 1 PDM
0 .0 t1
Single pulse
t2
-5 -4 -3 -2 -1
10 10 10 10 10 100 101

Square Wave Pulse Duration, t1 (sec)

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1N60 Power MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

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