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  • Itf File Example - Itf

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    Mohd Moinuddin
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    The document describes the layer structure and materials of a semiconductor device. It lists the thicknesses, dielectric constants, and other properties of 16 dielectric layers and 7 conductor layers, as well as the properties of 10 vias connecting the layers. The layer structure includes materials like silicon dioxide and metals like copper for conductors.

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    itf-file-example.itf

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    The document describes the layer structure and materials of a semiconductor device. It lists the thicknesses, dielectric constants, and other properties of 16 dielectric layers and 7 conductor layers, as well as the properties of 10 vias connecting the layers. The layer structure includes materials like silicon dioxide and metals like copper for conductors.

    Copyright:

    © All Rights Reserved
    Download as TXT, PDF, TXT or read online from Scribd
    Flag for inappropriate content
    29 views1 page

    Itf File Example - Itf

    Uploaded by

    Mohd Moinuddin
    The document describes the layer structure and materials of a semiconductor device. It lists the thicknesses, dielectric constants, and other properties of 16 dielectric layers and 7 conductor layers, as well as the properties of 10 vias connecting the layers. The layer structure includes materials like silicon dioxide and metals like copper for conductors.

    Copyright:

    © All Rights Reserved
    Download as TXT, PDF, TXT or read online from Scribd
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    of 1

    TECHNOLOGY = t018s6ml

    DIELECTRIC PASS3 {THICKNESS=0.600 ER=7.9 }


    DIELECTRIC PASS2 {THICKNESS=0.150 ER=4.2 }
    DIELECTRIC PASS1 {THICKNESS=1.000 ER=4.2 }
    CONDUCTOR metal6 {THICKNESS= 0.99 WMIN= 0.44 SMIN= 0.46 RPSQ=0.036
    CAPACITIVE_ONLY_ETCH=-0 }
    DIELECTRIC IMD5b {THICKNESS=0.350 ER=4.2 }
    DIELECTRIC IMD5a {THICKNESS=1.180 ER=3.7 }
    CONDUCTOR metal5 {THICKNESS= 0.53 WMIN= 0.28 SMIN= 0.28 RPSQ=0.078
    CAPACITIVE_ONLY_ETCH=-0 }
    DIELECTRIC IMD4b {THICKNESS=0.200 ER=4.2 }
    DIELECTRIC IMD4a {THICKNESS=1.180 ER=3.7 }
    CONDUCTOR metal4 {THICKNESS= 0.53 WMIN= 0.28 SMIN= 0.28 RPSQ=0.078
    CAPACITIVE_ONLY_ETCH=-0 }
    DIELECTRIC IMD3b {THICKNESS=0.200 ER=4.2 }
    DIELECTRIC IMD3a {THICKNESS=1.180 ER=3.7 }
    CONDUCTOR metal3 {THICKNESS= 0.53 WMIN= 0.28 SMIN= 0.28 RPSQ=0.078
    CAPACITIVE_ONLY_ETCH=-0 }
    DIELECTRIC IMD2b {THICKNESS=0.200 ER=4.2 }
    DIELECTRIC IMD2a {THICKNESS=1.180 ER=3.7 }
    CONDUCTOR metal2 {THICKNESS= 0.53 WMIN= 0.28 SMIN= 0.28 RPSQ=0.078
    CAPACITIVE_ONLY_ETCH=-0 }
    DIELECTRIC IMD1b {THICKNESS=0.200 ER=4.2 }
    DIELECTRIC IMD1a {THICKNESS=1.180 ER=3.7 }
    CONDUCTOR metal1 {THICKNESS= 0.53 WMIN= 0.23 SMIN= 0.23 RPSQ=0.078
    CAPACITIVE_ONLY_ETCH=-0 }
    DIELECTRIC ILD_B {THICKNESS=0.550 ER=4.0 }
    DIELECTRIC ILD_C {THICKNESS=0.200 ER=4.0 }
    CONDUCTOR poly {THICKNESS= 0.20 WMIN= 0.18 SMIN= 0.25 RPSQ=7.8
    CAPACITIVE_ONLY_ETCH=0.01 }
    DIELECTRIC FOX_A {THICKNESS=0.050 ER=3.9 }
    DIELECTRIC FOX_B {THICKNESS=0.160 ER=3.9 }
    CONDUCTOR OD {THICKNESS= 0.16 WMIN= 0.22 SMIN= 0.22 RPSQ=4.1}
    DIELECTRIC FOX_C {THICKNESS=0.190 ER=3.9 }
    VIA polyCont { FROM=poly TO=metal1 AREA=0.0484 RPV=6.7 }
    VIA odCont { FROM=OD TO=metal1 AREA=0.0484 RPV=10 }
    VIA weltap { FROM=substrate TO=OD }
    VIA via5 { FROM=metal5 TO=metal6 AREA=0.1296 RPV=2.54 }
    VIA via4 { FROM=metal4 TO=metal5 AREA=0.0676 RPV=6.4 }
    VIA via3 { FROM=metal3 TO=metal4 AREA=0.0676 RPV=6.4 }
    VIA via2 { FROM=metal2 TO=metal3 AREA=0.0676 RPV=6.4 }
    VIA via1 { FROM=metal1 TO=metal2 AREA=0.0676 RPV=6.4 }

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