NMOS Inverter

3. Enhancement - Loaded NMOS Inverter

3. (A)- Saturated Enhancement Only- Loaded NMOS Inverter

Enhancement N-channel MOSFET as a load device = NL

Enhancement N-channel MOSFET as = No

(same points)

For is always in the ON region of operation

⇒ must be minimum value of

so

So always

⇒ is always in the saturated region of operation

VIN = VGS,O
VO = VDS,O
==
VDS,L = VDD _ VO
VGS,L = VDS,L
The circuit is inverter so

 =0 ⇒ = "1"
for at ˂ ⇒ off
for is always (ON and SAT. ) ⇒

( ) == =0
Which yields . Since the
 At ⇒ ( is EOC)

 At = = ⇒
≥( ) ⇒( is Sat.) AND
≥( ) ⇒( is Sat.) ⇒ SO

( ) ( ) After solve

√
√

 At = ⇒ Slop = =
˂( ) ⇒( is LIN.) AND
≥( ) ⇒( is Sat.) ⇒ SO
 [( ) ] ( )
⇒ After solve

( ) ( )

 At = "1" = ⇒ = By solve

(LIN) = After solve

H.W
Find the critical points for the voltage transfer characteristic of a
saturated enhancement-on]y loaded NMOS inverter. Use VDD = 10 V,
(W/L)o = 10/5, and (W/L)L = 5/15. And = 1.2 V?

The results

(KR = 6, , ,
)
3. (B)- Linear Enhancement Only- Loaded NMOS Inverter

Enhancement N-channel MOSFET as a load device = NL

Enhancement N-channel MOSFET as = No

For (NL is ON & Linear)

And
The must be

⇒ is always in the linear region of operation

VIN = VGS,O
VO = VDS,O
==
VDS,L = VDD _ VO
VGS,L = VGG _ VO

The circuit is inverter so

 =0 ⇒ = "1"
for at ˂ ⇒ off
for is always (ON and LIN. ) ⇒
 [( ) ]== 0
Which yields . Since the

 ⇒( is ON & SAT.)
 At( = ⇒ Slop = = AT
( is Sat.) AND ( is LIN.) ⇒so

[( ) ]=

= ( ) ⇒ after solve

At = = ⇒
( is Sat.) AND ( is LIN.) ⇒ so after solve eq.(2) ⇒

( )

( ) =0

 At( = ⇒ Slop = = AT
( is LIN.) AND ( is LIN.) ⇒so

[( ) ]= ( )

⇒ after solve
 ‫(‬ ‫()‬ ‫)‬

‫[‬ ‫]‬

‫( ‪ At‬‬ ‫=‬ ‫⇒‬

‫(‬ ‫( ‪is LIN.) AND‬‬ ‫‪is LIN.) ⇒so‬‬

‫‪⇒ after solve eq. -------3‬‬

‫([‬ ‫)‬ ‫]‬

‫(‬ ‫)‬ ‫(‬ ‫)‬

‫كل القوانين ال تحفظ لهذا الدرس وبنوعيه االول والثاني المطلوب تحديد حالة كل‬
‫ترانزستور والتعويض في معادلة التيار مثال الخطوة االخيرة اليجاد‬

‫([‬ ‫)‬ ‫]‬

‫=‬ ‫(‬ ‫)‬

H.W
Find the critical points for the voltage transfer characteristic of a linear
enhancement-on]y loaded NMOS inverter. Use VDD = 5 V, VGG = 10 V,
(W/L)o = 10/5, and (W/L)L = 5/20. And = 1.1 V?

The results

(KR = 8, ,
)
‫كذلك‬

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