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Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors SOT-23
Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors SOT-23
SEMICONDUCTOR
MCR100-8
SCRs
Sensitive Gate
Sillicon Controlled Rectifiers 0.25 AMPERES RMS
Reverse Blocking Thyristors 600 VOLTS
SOT-23
FEATURES
Sensitive Gate Allows Triggering by Microcontrollers and Other
logic Circuits SOT-23
Blocking Voltage to 600 Volts DIM. MIN. MAX.
On-State RMS Current (Tc = 80℃) 180° Conduction Angles IT(RMS) 0.25 Amps
Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = 25℃) ITSM 9 Amps
2
Circuit Fusing Consideration (t = 8.3 ms) I t 0.336 A2 s
Forward Peak Gate Power (Ta = 25℃, Pulse Width ≦1.0 us) PGM 0.1 Watts
Forward Average Gate Power (Ta = 25℃, t = 8.3 ms) PG(AV) 0.1 Watts
Forward Peak Gate Current (Ta = 25℃, Pulse Width≦1.0 us) IGM 1 Amps
Reverse Peak Gate Voltage (Ta = 25℃, Pulse Width ≦1.0 ms) VGRM 5 Volts
Operating Junction Temperature Range @ Rate VRRM and VDRM TJ -40 to + 110 ℃
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Lead Temperature for Soldering Purposes 1/16" from Case for 10 Seconds TL 260 ℃
OFF CHARACTERSITICS
Peak Reptitive Forward or Reverse Blocking Current TJ=25℃ IDRM --- --- 10
IRRM --- --- 100 uA
(VD=Rated VDRM and VRRM; RGK =1K Ohms) TJ=110℃
ON CHARACTERISTICS
Peak Forward On-State Voltage
VTM --- --- 1.5 Volts
(ITM= ± 0.3A Peak, Pulse Width≦ 1.0ms, Duty Cycle≦ 1%)
DYNAMIC CHARACTERISITCS
Critical Rate of Rise of Off-State Voltage
dv/dt 20 --- --- V/us
(VD=Rated VDRM, Exponential Waveform, RGK=1K Ohms, TJ=110℃
VTM - IT
10.0
IT(A), Instantaeous on-state
Current (A)
1.0
VT(25℃)
VT(110℃)
0.1
0 1 2 3 4 5 6 7
VT, Instantaneous on-state voltage(V)
50 0.80
0.75
IGT,Gate tigger current (uA)
0.65
30
0.60
20 0.55
0.50
10
0.45
0.40
0 -40 -25 -10 5 20 35 50 65 80 95 110
-40 -25 -10 5 20 35 50 65 80 95 110
Tj, Juction temperature (℃)
Tj, Juction temperature (℃)
Figure 3. VGT(TJ) / VGT(25℃) versus
Figure 2. IGT(TJ) / IGT(25℃) versus TJ
0.45 0.45
IL,Latching current (mA)
IH,Holding current (mA)
0.40 0.40
0.35
0.35
0.30
0.30
0.25
0.25
0.20
0.20
0.15
0.15
0.10
0.10 -40 -25 -10 5 20 35 50 65 80 95 110
-40 -25 -10 5 20 35 50 65 80 95 110
Tj, Juction temperature (℃)
Tj, Juction temperature (℃)
Figure 5. IL versus TJ
Figure 4. IH versus TJ
0.3
IT(RMS), On-State Current(A)
0.25
0.2
0.15
0.1
0.05
0
0 20 40 60 80 100 120