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Z ibo Seno Electronic Engineering Co., Ltd.

10U45S
10A SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
! Schottky Barrier Chip
! Bypass Diodes for Solar Panels
! High Junction Temperture
! High Thermal Reliability
! Patented Super Barrier Rectifier Technology
! High Foward Surge Capability
! Ultra Low Power Loss, High Efficiency Top View Bottom View
! Excellent High Temperature Stability

LEFT PIN BOTTOMSIDE


RIGHT PIN HEAT SINK
Mechanical Data
Note: Pins Left & Right must
! Case:TO-277B Molded Plastic "Green" Molding Compound be electrically connected
! Terminals: Plated Leads Solderable per at the printed circuit board.

MIL-STD-202, Method 208


! Polarity: Cathode Band
! Mounting Position: Any
! Marking: Type Number
! Lead Free: For RoHS/Lead Free Version

Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified


Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

Parameter Symbol 10U45S Unit

Peak Repetitive Reverse Voltage V RRM

Working Peak Reverse Voltage VRWM 45 V

DC blocking voltage V DC

RMS Rectified Voltage VR(RMS) 32 V

Average Rectified Output Current (Note1) IO 10.0 A

Non-Repetitive Peak Forward Surge8.3ms


Single Half Sine-Wave Superimposed on rated IFSM 275 A
load(JEDEC Method) (Note2)

I 2 t Rating for Fusing (t < 8.3ms) I 2t 313.8 A2s

Forward Voltage Drop TA =25 ℃ V


V FM 0.42
@IF=10A

Peak Reverse Curent TA =25 ℃ 0.3


IR mA
At Rated DC Blocking Voltage TA =100 ℃ 15

Typical Thermal Resistance R θJA 80


℃ /W
Junctionto Ambient R θJL 15

Operating junction temperature range TJ -55 to +150 ℃

storage temperature range TSTG -55 to +150 ℃

Note:1.Valid Provided that are kept at ambient temperature at a distance of 9.5mm from the case.
2.Fr-4pcb.2oz.Copper,minimum recommend pad layout .18.8mm×14.4.Anode pad dimensions 5.6mm×14.4mm.

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Z ibo Seno Electronic Engineering Co., Ltd.

10U45S
FIG.1 - FORWARD CURRENT DERATING CURVE FIG.2 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS

10.0 10

IINSTANTANEOUS FORWARD CURRENT,


AVERAGE FORWARD RECTIFIED

8.0
CURRENT, AMPERES

AMPERES
6.0

4.0

0.1

2.0
o
60 Hz Resistive or TJ=25 C
Inductive load PULSE WIDTH=300uS
0 1% DUTY CYCLE
0.01
0 50 100 150
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
o
LEAD TEMPERATURE, C INSTANTANEOUS FORWARD VOLTAGE,
VOLTS

FIG.3 - MAXIMUM NON-REPETITIVE


PEAK FORWARD SURGE CURRENT FIG.4 - TYPICAL REVERSE CHARACTERISTICS

275 100
RR

Pulse Width 8.3ms


PEAK FORWARD SURGE CURRENT,

INSTANTANEOUS REVERSE CURRENT,

Single Half-Sire-Wave
250 (JEDEC Method)

225 10 o
TJ=100 C
MICROAMPERES

200
AMPERES

175 1

150

125 0.1
o
100 TJ=25 C

75 0.01

1 10 100 0 20 40 60 80 100

NUMBER OF CYCLES AT 60Hz PERCENT OF RATED PEAK REVERSE VOLTAGE,%


R

FIG.5 - TYPICAL JUNCTION CAPACITANCE


10000 o
TJ = 25 C
f = 1.0 MHZ
Vsig = 50mVp-p
JUNCTION CAPACITANCE, pF

1000

100
0.1 1.0 4.0 10 100

REVERSE VOLTAGE, VOLTS

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Z ibo Seno Electronic Engineering Co., Ltd.

10U45S
Ordering Information

Part Number Case Packaging


10U45S TO-277B 5000/Tape & Reel

Outline Dimensions
A
E
F TO-277B
B Dim Min Max
D
A 1.05 1.15
K B 0.33 0.43
C 0.80 0.99
D 1.70 1.88
G J E 3.90 4.05
I
F 3.054 Typ
G 6.40 6.60
M H 1.84 Typ
L I 5.30 5.45
J 3.549 Typ
H K 0.75 0.95
L 0.50 0.65
C C B M 1.10 1.41
All Dimensions in mm

Suggested Pad Layout

Dimensions Value (in mm)


a 3.360
b b 4.860
c 1.390
d 1.400
e 1.840
h 0.852

c h

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