Si4565DY

New Product Vishay Siliconix

N- and P-Channel 40-V (D-S) MOSFET

FEATURES
PRODUCT SUMMARY
TrenchFET Power MOSFET

100% Rg Tested
VDS (V) rDS(on) (W) ID (A) Qg (Typ)

UIS Tested
0.040 @ VGS = 10 V 5.2
N-Channel 40 8 APPLICATIONS
0.045 @ VGS = 4.5 V 4.9

CCFL Inverter
0.054 @ VGS = −10 V −4.5
P Channel
P-Channel −40
40 9
0.072 @ VGS = −4.5 V −3.9

D1 S2
SO-8

S1 1 8 D1

G1 2 7 D1 G2
S2 3 6 D2 G1

G2 4 5 D2

Top View S1 D2
N-Channel MOSFET P-Channel MOSFET
Ordering Information: Si4565DY—E3
Si4565DY-T1—E3 (with Tape and Reel)

ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS OTHERWISE NOTED)

N-Channel P-Channel

Parameter Symbol 10 secs Steady State 10 secs Steady State Unit

Drain-Source Voltage VDS 40 −40
V
Gate-Source Voltage VGS "12 "16
TA = 25C 5.2 3.9 −4.5 −3.3
Continuous Drain Current (TJ = 150C)a ID
TA = 70C 4.2 3.1 −3.6 −2.7
Pulsed Drain Current IDM 30 A
Continuous Source Current (Diode Conduction)a IS 1.7 0.9 −1.7 −0.9
Avalanche Current IAS 13 16
L = 0.1
0 1 mH
Single Pulse Avalanche Energy EAS 8.5 13 mJ
TA = 25C 2.0 1.1 2 1.1
Maximum Power Dissipatioa PD W
TA = 70C 1.3 0.7 1.3 0.7
Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 C

THERMAL RESISTANCE RATINGS

N-Channel P-Channel

Parameter Symbol Typ Max Typ Max Unit

t v 10 sec 52 62.5 50 62.5
Maximum Junction to Ambienta
Junction-to-Ambient RthJA
Steady State 90 110 85 110 C/W
C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 32 40 30 40

Notes
a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 73224 www.vishay.com

S-50033—Rev. A, 17-Jan-05 1
Si4565DY
Vishay Siliconix New Product

SPECIFICATIONS (TJ = 25C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Condition Min Typ Max Unit
Static
VDS = VGS, ID = 250 mA N-Ch 0.6 1.6
Gate Threshold Voltage VGS(th) V
VDS = VGS, ID = −250 mA P-Ch −0.8 −2.2
N-Ch 40
VDS Temperature Coefficient DVDS/Tj
P-Ch −40
ID = 250 mA mV/C
N-Ch −3.8
VGS(th) Temperature Coefficient DVGS(th)/Tj
P-Ch 3.4
VDS = 0 V, VGS = "12 V N-Ch "100
Gate Body Leakage
Gate-Body IGSS nA
VDS = 0 V, VGS = "16 V P-Ch "100
VDS = 40 V, VGS = 0 V N-Ch 1
VDS = −40 V, VGS = 0 V P-Ch −1
Zero Gate Voltage Drain Current IDSS mA
VDS = 40 V, VGS = 0 V, TJ = 55C N-Ch 10
VDS = −40 V, VGS = 0 V, TJ = 55C P-Ch −10
VDS w 5 V, VGS = 10 V N-Ch 20
On State Drain Currenta
On-State ID(on)
D( ) A
VDS p −5 V, VGS = −10 V P-Ch −20
VGS = 10 V, ID = 5.2 A N-Ch 0.033 0.040
VGS = −10 V, ID = −4.5 A P-Ch 0.045 0.054
On State Resistancea
Drain Source On-State
Drain-Source rDS(on)
DS( ) W
VGS = 4.5 V, ID = 4.9 A N-Ch 0.037 0.045
VGS = −4.5 V, ID = −3.9 A P-Ch 0.059 0.072
VDS = 15 V, ID = 5.2 A N-Ch 18
Forward Transconductancea gfs
f S
VDS = −15 V, ID = −4.5 A P-Ch 13
IS = 1.7 A, VGS = 0 V N-Ch 0.75 1.2
Diode Forward Voltagea VSD V
IS = −1.7 A, VGS = 0 V P-Ch −0.79 −1.2
Dynamicb
N-Ch 700
Input Capacitance Ciss N-Channel
VDS = 20 V, VGS = 0 V, f = 1 MHz P-Ch 805
N-Ch 76
Output Capacitance Coss P-Channel
P Channel pF
P-Ch 120
VDS = −20 V,
V VGS = 0 V,
V f = 1 MHz
N-Ch 45
Reverse Transfer Capacitance Crss
P-Ch 85
N-Ch 8 12
Total Gate Charge Qg N-Channel
VDS = 20 V, VGS = 4.5 V, ID = 5.2 A P-Ch 9 14
N-Ch 1.5
Gate Source Charge
Gate-Source Qgs P-Channel
P Channel nC
P-Ch 2
VDS = −20 V,
V VGS = −4.5
−4 5 V
V, ID = −4.5
−4 5 A
N-Ch 2.4
Gate Drain Charge
Gate-Drain Qgdd
P-Ch 3.6
N-Ch 0.9 1.9 2.9
Gate Resistance Rg W
P-Ch 5 11.5 18
N-Ch 7 11
Turn On Delay Time
Turn-On td(on)
d( )
N-Channel P-Ch 8 13
VDD = 15 V, RL = 15 W N-Ch 11 17
Rise Time tr ID ^ 1 A
A, VGEN = 10 V
V, Rg = 6 W P-Ch 12 18
ns
P-Channel N-Ch 27 40
Turn Off Delay Time
Turn-Off td(off)
d( ff)
VDD = −15 V,, RL = 15 W P-Ch 74 110
ID ^ −1
1AA, VGEN = −10
10 V
V, Rg = 6 W N-Ch 8 13
Fall Time tf
P-Ch 38 60
Source-Drain IF = 1.7 A, di/dt = 100 A/ms N-Ch 25 40
trr ns
Reverse Recovery Time IF = −1.7 A, di/dt = 100 A/ms P-Ch 27 45
Body Diode IF = 1.7 A, di/dt = 100 A/ms N-Ch 17 26
Qrr nC
Reverse Recovery Charge IF = −1.7 A, di/dt = 100 A/ms P-Ch 17 26

Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the
device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions
for extended periods may affect device reliability.

www.vishay.com Document Number: 73224

2 S-50033—Rev. A, 17-Jan-05
 Si4565DY
New Product Vishay Siliconix

TYPICAL CHARACTERISTICS (25C UNLESS NOTED) N-CHANNEL

Output Characteristics Transfer Characteristics
20 20

VGS = 10 thru 3 V

16 16
I D − Drain Current (A)

I D − Drain Current (A)

12 12

8 8

2V TC = 125C

4 4
25C
−55C
0 0
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0

VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current Capacitance

0.050 1200
r DS(on) − On-Resistance ( W )

0.045 1000
C − Capacitance (pF)

0.040 800
Ciss
VGS = 4.5 V
VGS = 10 V
0.035 600

0.030 400

Coss Crss
0.025 200

0.020 0
0 4 8 12 16 20 0 5 10 15 20 25 30 35 40

ID − Drain Current (A) VDS − Drain-to-Source Voltage (V)

Gate Charge On-Resistance vs. Junction Temperature

6 1.8
ID = 5.2 A VGS = 10 V
V GS − Gate-to-Source Voltage (V)

ID = 5.2 A
5 1.6

VDS = 10 V
rDS(on) − On-Resistance

4 1.4
(Normalized)

3 1.2
VDS = 20 V

2 1.0

1 0.8

0 0.6
0 1 2 3 4 5 6 7 8 9 10 11 −50 −25 0 25 50 75 100 125 150
Qg − Total Gate Charge (nC) TJ − Junction Temperature (C)

Document Number: 73224 www.vishay.com

S-50033—Rev. A, 17-Jan-05 3
Si4565DY
Vishay Siliconix New Product

TYPICAL CHARACTERISTICS (25C UNLESS NOTED) N-CHANNEL

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
20 0.20

ID = 5.2 A

0.16

r DS(on) − On-Resistance ( W )
10
I S − Source Current (A)

TJ = 150C

0.12

0.08
TA = 125C

TJ = 25C
0.04
TA = 25C

1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V)

Threshold Voltage Single Pulse Power, Junction-to-Ambient

0.4 100

0.2 80
ID = 250 mA
V GS(th) Variance (V)

−0.0 60
Power (W)

−0.2 40

−0.4 20

−0.6 0
−50 −25 0 25 50 75 100 125 150 0.01
0.001 0.01 0.1 1 10
TJ − Temperature (C) Time (sec)

Safe Operating Area, Junction-to-Foot

100

*Limited by rDS(on)
10
I D − Drain Current (A)

1 ms
1
10 ms

100 ms
0.1
TC = 25C 1s
Single Pulse
10 s
dc
0.01
0.1 1 10 100
VDS − Drain-to-Source Voltage (V)
*VGS u minimum VGS at which rDS(on) is specified

www.vishay.com Document Number: 73224

4 S-50033—Rev. A, 17-Jan-05
 Si4565DY
New Product Vishay Siliconix

TYPICAL CHARACTERISTICS (25C UNLESS NOTED) N-CHANNEL

Normalized Thermal Transient Impedance, Junction-to-Ambient
2

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2 Notes:

0.1 PDM

0.1
0.05 t1
t2
t1
1. Duty Cycle, D =
0.02 t2
2. Per Unit Base = RthJA = 90C/W
3. TJM − TA = PDMZthJA(t)

Single Pulse 4. Surface Mounted

0.01
10−4 10−3 10−2 10−1 1 10 100 600

Square Wave Pulse Duration (sec)

Normalized Thermal Transient Impedance, Junction-to-Foot

2

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2

0.1
0.1 0.05

0.02

Single Pulse

0.01
10−4 10−3 10−2 10−1 1 10
Square Wave Pulse Duration (sec)

TYPICAL CHARACTERISTICS (25C UNLESS NOTED) P-CHANNEL

Output Characteristics Transfer Characteristics
20 20

VGS = 10 thru 4 V TC = −55C

16 16 25C
I D − Drain Current (A)

I D − Drain Current (A)

12 12 125C

3V
8 8

4 4

0 0
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V)

Document Number: 73224 www.vishay.com

S-50033—Rev. A, 17-Jan-05 5
 Si4565DY
Vishay Siliconix New Product

TYPICAL CHARACTERISTICS (25C UNLESS NOTED) P-CHANNEL

On-Resistance vs. Drain Current Capacitance
0.10 1240

1116
r DS(on) − On-Resistance ( W )

0.08 992

C − Capacitance (pF)
868 Ciss
VGS = 4.5 V
0.06 744
VGS = 10 V
620

0.04 496

372

0.02 248
Coss
124
Crss
0.00 0
0 4 8 12 16 20 0 5 10 15 20 25 30 35 40

ID − Drain Current (A) VDS − Drain-to-Source Voltage (V)

Gate Charge On-Resistance vs. Junction Temperature

6 1.8
ID = 4.5 A VGS = 10 V
V GS − Gate-to-Source Voltage (V)

ID = 4.5 A
5 1.6
rDS(on) − On-Resistance

4 1.4
(Normalized)

VDS = 10 V
VDS = 20 V
3 1.2

2 1.0

1 0.8

0 0.6
0 2 4 6 8 10 12 −50 −25 0 25 50 75 100 125 150
Qg − Total Gate Charge (nC) TJ − Junction Temperature (C)

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

20 0.30
ID = 4.5 A
0.25
r DS(on) − On-Resistance ( W )

10
TJ = 150C
I S − Source Current (A)

0.20

TJ = 25C 0.15

0.10
TA = 125C

0.05
TA = 25C

1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10
VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V)

www.vishay.com Document Number: 73224

6 S-50033—Rev. A, 17-Jan-05
 Si4565DY
New Product Vishay Siliconix

TYPICAL CHARACTERISTICS (25C UNLESS NOTED) P-CHANNEL

Threshold Voltage Single Pulse Power
0.6 50

40
0.4 ID = 250 mA
V GS(th) Variance (V)

0.2 30

Power (W)
0.0 20

−0.2 10

−0.4 0
−50 −25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 100 600
TJ − Temperature (C) Time (sec)

Safe Operating Area, Junction-to-Ambient

100
*rDS(on) Limited IDM Limited

10
I D − Drain Current (A)

1 ms
1
10 ms
ID(on)
Limited
100 ms
TA = 25C
0.1 Single Pulse 1s
10 s
dc
BVDSS Limited
0.01
0.1 1 10 100
VDS − Drain-to-Source Voltage (V)
*VGS u minimum VGS at which rDS(on) is specified

Normalized Thermal Transient Impedance, Junction-to-Ambient

2

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2
Notes:
0.1
0.1 PDM
0.05
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 85C/W
Single Pulse 3. TJM − TA = PDMZthJA(t)
4. Surface Mounted
0.01
10−4 10−3 10−2 10−1 1 10 100 600

Document Number: 73224 www.vishay.com

S-50033—Rev. A, 17-Jan-05 7
 Si4565DY
Vishay Siliconix New Product

TYPICAL CHARACTERISTICS (25C UNLESS NOTED) P-CHANNEL

Normalized Thermal Transient Impedance, Junction-to-Foot

2

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2

0.1
0.1
0.05

0.02

Single Pulse
0.01
10−4 10−3 10−2 10−1 1 10
Square Wave Pulse Duration (sec)

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?73224.

www.vishay.com Document Number: 73224

8 S-50033—Rev. A, 17-Jan-05