ON Semiconductor NPN Transistors Guide

ON Semiconductor
2N4921
Medium-Power Plastic NPN
thru
Silicon Transistors
2N4923 *
. . . designed for driver circuits, switching, and amplifier
*ON Semiconductor Preferred Device
applications. These high–performance plastic devices feature:
• Low Saturation Voltage — 1 AMPERE
VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp GENERAL–PURPOSE
POWER TRANSISTORS
• Excellent Power Dissipation Due to Thermopad Construction —
40–80 VOLTS
PD = 30 W @ TC = 25C 30 WATTS
• Excellent Safe Operating Area
• Gain Specified to IC = 1.0 Amp
• Complement to PNP 2N4918, 2N4919, 2N4920
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
*MAXIMUM RATINGS
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
STYLE 1:
Rating Symbol 2N4921 2N4922 2N4923 Unit PIN 1. EMITTER
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
3 2 2. COLLECTOR
Collector–Emitter Voltage VCEO 40 60 80 Vdc 1 3. BASE
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
Collector–Base Voltage VCB 40 60 80 Vdc
CASE 77–09
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
Emitter–Base Voltage VEB 5.0 Vdc TO–225AA TYPE
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
Collector Current — Continuous (1) IC 1.0 Adc
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
3.0
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
Base Current — Continuous IB 1.0 Adc
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
Total Power Dissipation @ TC = 25C PD 30 Watts
Derate above 25C 0.24 W/C
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎ
Operating & Storage Junction
ÎÎÎÎÎÎÎÎ
ÎÎÎ
Temperature Range
TJ, Tstg –65 to +150 C
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
THERMAL CHARACTERISTICS (2)
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Characteristic Symbol Max Unit
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Thermal Resistance, Junction to Case θJC
(1) The 1.0 Amp maximum IC value is based upon JEDEC current gain requirements.
4.16 C/W
The 3.0 Amp maximum value is based upon actual current handling capability of the
device (see Figures 5 and 6).
(2) Recommend use of thermal compound for lowest thermal resistance.
*Indicates JEDEC Registered Data.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
 Semiconductor Components Industries, LLC, 2002 1 Publication Order Number:

April, 2002 – Rev. 10 2N4921/D
2N4921 thru 2N4923
40
PD, POWER DISSIPATION (WATTS)

30
20
10
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed.
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2
2N4921 thru 2N4923
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ Characteristic Symbol Min Max Unit
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎ
ÎÎÎ
Collector–Emitter Sustaining Voltage (3) VCEO(sus) Vdc
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 0.1 Adc, IB = 0) 2N4921 40 —
2N4922
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
60 —
2N4923 80 —
ÎÎÎÎÎ
Collector Cutoff Current
ÎÎÎÎÎ
(VCE = 20 Vdc, IB = 0) ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
2N4921
ICEO
— 0.5
mAdc
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(VCE = 30 Vdc, IB = 0) 2N4922 — 0.5
(VCE = 40 Vdc, IB = 0) 2N4923 — 0.5
ÎÎÎÎÎ
Collector Cutoff Current
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(VCE = Rated VCEO, VEB(off) = 1.5 Vdc)
ICEX
— 0.1
mAdc
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(VCE = Rated VCEO, VEB(off) = 1.5 Vdc, TC = 125C — 0.5
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector Cutoff Current ICBO — 0.1 mAdc
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(VCB = Rated VCB, IE = 0)
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Emitter Cutoff Current IEBO — 1.0 mAdc
(VEB = 5.0 Vdc, IC = 0)
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ON CHARACTERISTICS
DC Current Gain (3)
ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 1.0 Vdc)
hFE
40 —
—
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
30 150
(IC = 1.0 Adc, VCE = 1.0 Vdc) 10 —
ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Collector–Emitter Saturation Voltage (3)
ÎÎÎÎ
ÎÎÎ
(IC = 1.0 Adc, IB = 0.1 Adc)
VCE(sat) — 0.6 Vdc
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Base–Emitter Saturation Voltage (3) VBE(sat) — 1.3 Vdc
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 1.0 Adc, IB = 0.1 Adc)
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Base–Emitter On Voltage (3) VBE(on) — 1.3 Vdc
(IC = 1.0 Adc, VCE = 1.0 Vdc)
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
SMALL–SIGNAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ

ÎÎÎÎ
ÎÎÎ
Current–Gain — Bandwidth Product (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz) fT 3.0 — MHz
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz) Cob — 100 pF
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Small–Signal Current Gain (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(3) Pulse Test: PW ≈ 300 µs, Duty Cycle ≈ 2.0%.
*Indicates JEDEC Registered Data.
hfe 25 — —
APPROX
TURN-ON PULSE 5.0
+11 V
t1 VCC = 30 V IC/IB = 10, UNLESS NOTED
VCC 3.0
Vin RC IC/IB = 20 TJ = 25°C
2.0 TJ = 150°C
Vin VCC = 60 V
VBE(off) RB 1.0
t, TIME (s)
Cjd<<Ceb 0.7
µ
t3 0.5 tr
APPROX -4.0 V VCC = 30 V
SCOPE
+11 V t1 ≤ 15 ns 0.3 td
0.2 VCC = 60 V
100 < t2 ≤ 500 µs
Vin VBE(off) = 2.0 V
t3 ≤ 15 ns
0.1 VCC = 30 V
APPROX 9.0 V DUTY CYCLE ≈ 2.0% 0.07
t2 VBE(off) = 0
RB and RC varied to 0.05
TURN-OFF PULSE obtain desired 10 20 30 50 70 100 200 300 500 700 1000
current levels IC, COLLECTOR CURRENT (mA)
Figure 2. Switching Time Equivalent Circuit Figure 3. Turn–On Time
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3
2N4921 thru 2N4923
1.0
0.7 D = 0.5
RESISTANCE (NORMALIZED) 0.5
r(t), TRANSIENT THERMAL
0.3 0.2
0.2 P(pk)
0.1 θJC(t) = r(t) θJC
0.05 θJC = 4.16°C/W MAX
0.1
D CURVES APPLY FOR POWER
0.07 PULSE TRAIN SHOWN
0.05 0.01 t1
READ TIME AT t1 t2
0.03 TJ(pk) - TC = P(pk) θJC(t) DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.02
0.01
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000
t, TIME (ms)
Figure 4. Thermal Response
10 There are two limitations on the power handling ability of

7.0 a transistor: average junction temperature and second
5.0 100 µs
IC, COLLECTOR CURRENT (AMP)
5.0 ms 1.0 ms breakdown. Safe operating area curves indicate I C – V CE

3.0 operation i.e., the transistor must not be subjected to greater
2.0 TJ = 150°C dc dissipation than the curves indicate.
The data of Figure 5 is based on T J(pk) = 150C; T C
1.0 is variable depending on conditions. Second breakdown
0.7 SECOND BREAKDOWN pulse limits are valid for duty cycles to 10% provided TJ(pk)
0.5 LIMITED
150C. At high case temperatures, thermal limitations
BONDING WIRE LIMITED
0.3 THERMALLY LIMITED @ TC = 25°C will reduce the power that can be handled to values less than
0.2 PULSE CURVES APPLY BELOW the limitations imposed by second breakdown.
RATED VCEO
0.1
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Active–Region Safe Operating Area
5.0 5.0
3.0 IC/IB = 20 3.0
IC/IB = 20
2.0 2.0
t s′, STORAGE TIME (s)
µ
1.0
t f , FALL TIME (s)
1.0
µ
0.7 IC/IB = 10 IC/IB = 20 0.7

0.5 0.5
0.3 0.3 IC/IB = 10
0.2 TJ = 25°C 0.2 TJ = 25°C
TJ = 150°C TJ = 150°C
0.1 IB1 = IB2 0.1 VCC = 30 V
0.07 ts′ = ts - 1/8 tf 0.07 IB1 = IB2
0.05 0.05
10 20 30 50 70 100 200 300 500 700 1000 10 20 30 50 70 100 200 300 500 700 1000
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 6. Storage Time Figure 7. Fall Time
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4
2N4921 thru 2N4923
1000 1.0
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

700 VCE = 1.0 V
500 IC = 0.1 A 0.25 A 0.5 A 1.0 A
0.8
300
hFE, DC CURRENT GAIN
200 TJ = 150°C
0.6 TJ = 25°C
100
25°C
70 0.4
50 -55°C
30 0.2
20
10 0
2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 2000 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200
IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA)
Figure 8. Current Gain Figure 9. Collector Saturation Region
RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS)
108 1.5
IC = 10 x ICES VCE = 30 V TJ = 25°C
107 1.2
IC = 2 x ICES VOLTAGE (VOLTS)
106 0.9
IC ≈ ICES
VBE(sat) @ IC/IB = 10
105 0.6
VBE @ VCE = 2.0 V
ICES VALUES
104 OBTAINED FROM 0.3
FIGURE 12
VCE(sat) @ IC/IB = 10
103 0
0 30 60 90 120 150 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 2000
TJ, JUNCTION TEMPERATURE (°C) IC, COLLECTOR CURRENT (mA)
Figure 10. Effects of Base–Emitter Resistance Figure 11. “On” Voltage
104 +2.5
+2.0 hFE@VCE 1.0V
TEMPERATURE COEFFICIENTS (mV/ °C)
TJ = 150°C *APPLIES FOR IC/IB ≤

103 2
IC, COLLECTOR CURRENT (A)
+1.5
µ
102 100°C +1.0 TJ = 100°C to 150°C

25°C +0.5
*θVC FOR VCE(sat)
101 0
-55°C to +100°C
IC = ICES -0.5
100 VCE = 30 V -1.0
10-1 -1.5
θVB FOR VBE
-2.0
REVERSE FORWARD
10-2 -2.5
-0.2 -0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 2000
VBE, BASE-EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
Figure 12. Collector Cut–Off Region Figure 13. Temperature Coefficients
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5
2N4921 thru 2N4923
PACKAGE DIMENSIONS
CASE 77–08
TO–225AA TYPE
ISSUE V
–B–
NOTES:
U F C 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
Q 2. CONTROLLING DIMENSION: INCH.
M
–A– INCHES MILLIMETERS
DIM MIN MAX MIN MAX
1 2 3 A 0.425 0.435 10.80 11.04
B 0.295 0.305 7.50 7.74
C 0.095 0.105 2.42 2.66
H D 0.020 0.026 0.51 0.66
K F 0.115 0.130 2.93 3.30
G 0.094 BSC 2.39 BSC
H 0.050 0.095 1.27 2.41
J 0.015 0.025 0.39 0.63
K 0.575 0.655 14.61 16.63
V J M 5 TYP 5 TYP
Q 0.148 0.158 3.76 4.01
G R R 0.045 0.055 1.15 1.39
S 0.025 0.035 0.64 0.88
S 0.25 (0.010) M A M B M
U 0.145 0.155 3.69 3.93
V 0.040 --- 1.02 ---
D 2 PL
0.25 (0.010) M A M B M STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
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2N4921 thru 2N4923
Notes
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7
2N4921 thru 2N4923
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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 Semiconductor Components Industries, LLC, 2002 1 Publication Order Number:

PD, POWER DISSIPATION (WATTS)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ

Figure 2. Switching Time Equivalent Circuit Figure 3. Turn–On Time

Figure 4. Thermal Response

10 There are two limitations on the power handling ability of

5.0 ms 1.0 ms breakdown. Safe operating area curves indicate I C – V CE

Figure 5. Active–Region Safe Operating Area

0.7 IC/IB = 10 IC/IB = 20 0.7

Figure 6. Storage Time Figure 7. Fall Time

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

TJ = 150°C *APPLIES FOR IC/IB ≤

102 100°C +1.0 TJ = 100°C to 150°C

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