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by 2N6487/D
SEMICONDUCTOR TECHNICAL DATA


 "     
!    
. . . designed for use in general–purpose amplifier and switching applications. 
• DC Current Gain Specified to 15 Amperes — 

hFE = 20 – 150 @ IC = 5.0 Adc
hFE = 5.0 (Min) @ IC = 15 Adc
• Collector–Emitter Sustaining Voltage — 

VCEO(sus) = 60 Vdc (Min) – 2N6487, 2N6490

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
*Motorola Preferred Device
VCEO(sus) = 80 Vdc (Min) – 2N6488, 2N6491
• High Current Gain — Bandwidth Product

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
15 AMPERE
fT = 5.0 MHz (Min) @ IC = 1.0 Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
COMPLEMENTARY
• TO–220AB Compact Package SILICON

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
POWER TRANSISTORS
MAXIMUM RATINGS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
60 – 80 VOLTS
2N6487 2N6488 75 WATTS

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Rating Symbol 2N6490 2N6491 Unit

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage VCEO 60 80 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Base Voltage VCB 70 90 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Voltage VEB 5.0 Vdc
Collector Current — Continuous IC 15 Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current IB 5.0 Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation @ TC = 25_C PD 75 Watts

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Derate above 25_C 0.6 W/_C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation @ TA = 25_C PD 1.8 Watts
Derate above 25_C 0.014 W/_C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
Operating and Storage Junction TJ, Tstg – 65 to + 150 _C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
Temperature Range CASE 221A–06

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TO–220AB
THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic Symbol Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Case RθJC 1.67 _C/W
Thermal Resistance, Junction to Ambient RθJA 70 _C/W
(1) Indicates JEDEC Registered Data.

TA TC
4.0 80
PD, POWER DISSIPATION (WATTS)

3.0 60
TC

2.0 40
TA

1.0 20

0 0
0 20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE (°C)

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7

 Motorola, Inc. 1995 1

Motorola Bipolar Power Transistor Device Data
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ

 
 
  
 

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic Symbol Min Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Sustaining Voltage (1) VCEO(sus) Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 200 mAdc, IB = 0) 2N6487, 2N6490 60 —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
2N6488, 2N6491 80

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Sustaining Voltage (1) VCEX Vdc
(IC = 200 mAdc, VBE = 1.5 Vdc) 2N6487, 2N6490

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
70 —
2N6488, 2N6491 90 —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current ICEO mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCE = 30 Vdc, IB = 0) 2N6487, 2N6490 — 1.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCE = 40 Vdc, IB = 0) 2N6488, 2N6491 — 1.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current ICEX µAdc
(VCE = 65 Vdc, VEB(off) = 1.5 Vdc) 2N6487, 2N6490 — 500

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCE = 85 Vdc, VEB(off) = 1.5 Vdc) 2N6488, 2N6491 — 500

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) 2N6487, 2N6490 — 5.0
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) 2N6488, 2N6491 — 5.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ IEBO — 1.0 mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VBE = 5.0 Vdc, IC = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain hFE —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 5.0 Adc, VCE = 4.0 Vdc) 20 150
(IC = 15 Adc, VCE = 4.0 Vdc) 5.0 —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Saturation Voltage VCE(sat) Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 5.0 Adc, IB = 0.5 Adc) — 1.3

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 15 Adc, IB = 5.0 Adc) — 3.5

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base–Emitter On Voltage VBE(on) Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 5.0 Adc, VCE = 4.0 Vdc) — 1.3
(IC = 15 Adc, VCE = 4.0 Vdc) — 3.5

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current–Gain — Bandwidth Product (2) fT 5.0 — MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 1.0 Adc, VCE = 4.0 Vdc, ftest = 1.0 MHz)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Small–Signal Current Gain hfe 25 — —
(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)
* Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width v
300 µs, Duty Cycle v 2.0%.
(2) fT = |hfe| • ftest.

VCC
+ 30 V 1000

25 µs RC 500
+ 10 V tr
SCOPE
RB 200
0
t, TIME (ns)

– 10 V 100
51 D1
v
tr, tf 10 ns 50 NPN td @ VBE(off) [ 5.0 V
DUTY CYCLE = 1.0% –4V PNP
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS. TC = 25°C
FOR PNP, REVERSE ALL POLARITIES. 20
VCC = 30 V
IC/IB = 10
D1 MUST BE FAST RECOVERY TYPE, e.g.:
[
1N5825 USED ABOVE IB 100 mA
10
0.2 0.5 1.0 2.0 5.0 10 20
[
MSD6100 USED BELOW IB 100 mA IC, COLLECTOR CURRENT (AMP)

Figure 2. Switching Time Test Circuit Figure 3. Turn–On Time

2 Motorola Bipolar Power Transistor Device Data

 
 
 
  
 
1.0
0.7
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.5
0.5
0.3
0.2
0.2
(NORMALIZED)

0.1
0.1 ZθJC (t) = r(t) RθJC P(pk)
0.07 0.05
RθJC = 1.67°C/W MAX
0.05 D CURVES APPLY FOR POWER
0.02
PULSE TRAIN SHOWN
0.03 t1
READ TIME AT t1 t2
0.02 0.01 TJ(pk) – TC = P(pk) ZθJC(t)
SINGLE PULSE DUTY CYCLE, D = t1/t2
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k
t, TIME (ms)

Figure 4. Thermal Response

20
There are two limitations on the power handling ability of a
10 100 µs transistors average junction temperature and second break-
IC, COLLECTOR CURRENT (AMP)

500 µs down. Safe operating area curves indicate IC – VCE limits of

5.0
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
2.0 1.0 ms
tion than the curves indicate.
TJ = 150°C
The data of Figure 5 is based on T J(pk) = 150_C; TC is
1.0 SECOND BREAKDOWN LIMITED 5.0 ms
variable depending on conditions. Second breakdown pulse
BONDING WIRE LIMITED
limits are valid for duty cycles to 10% provided T J(pk)
0.5 THERMALLY LIMITED @ TC = 25°C
CURVES APPLY BELOW RATED VCEO
v 150_C. T J(pk) may be calculated from the data in Figure 4.
0.2
At high case temperatures, thermal limitations will reduce the
2N6487, 2N6490 dc
power that can be handled to values less than the limitations
2N6488, 2N6491
0.1 imposed by second breakdown
2.0 4.0 10 20 40 60 80
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 5. Active–Region Safe Operating Area

5000 1000

700
ts
Cob
C, CAPACITANCE (pF)

1000
300 Cib
t, TIME (ns)

500 tf Cob
200
NPN
200 PNP VCC = 30 V
100 NPN
IC/IB = 10
100 IB1 = IB2 PNP
70
TJ = 25°C TJ = 25°C
50 50
0.2 0.5 1.0 2.0 5.0 10 20 0.5 1.0 2.0 5.0 10 20 50
IC, COLLECTOR CURRENT (AMP) VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Turn–Off Time Figure 7. Capacitances

Motorola Bipolar Power Transistor Device Data 3


 
 
  
 
NPN PNP
2N6487, 2N6488 2N6490, 2N6491
500 500
TJ = 150°C
200 25°C 200 TJ = 150°C
hFE, DC CURRENT GAIN

hFE, DC CURRENT GAIN

25°C
100 100
– 55°C – 55°C

50 50

20 20
VCE = 2.0 V
10 10 VCE = 2.0 V

5.0 5.0
0.2 0.5 1.0 2.0 5.0 10 20 0.2 0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 8. DC Current Gain
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

2.0 2.0
1.8 TJ = 25°C 1.8 TJ = 25°C

1.6 1.6
1.4 1.4
1.2 1.2
1.0 IC = 1.0 A 1.0 IC = 1.0 A 4.0 A 8.0 A

0.8 0.8
4.0 A 8.0 A
0.6 0.6
0.4 0.4
0.2 0.2
0 0
5.0 10 20 50 100 200 500 1000 2000 5000 5.0 10 20 50 100 200 500 1000 2000 5000
IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)
Figure 9. Collector Saturation Region

2.8 2.8

2.4 TJ = 25°C 2.4 TJ = 25°C

V, VOLTAGE (VOLTS)

V, VOLTAGE (VOLTS)

2.0 2.0

1.6 1.6

1.2 1.2
VBE(sat) = IC/IB = 10 VBE(sat) @ IC/IB = 10
0.8 0.8
VBE @ VCE = 2.0 V VBE @ VCE = 2.0 V
0.4 0.4
VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10
0 0
0.2 0.5 1.0 2.0 5.0 10 20 0.2 0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)

Figure 10. “On” Voltages

4 Motorola Bipolar Power Transistor Device Data

 
 
 
  
 
PACKAGE DIMENSIONS

NOTES:
SEATING 1. DIMENSIONING AND TOLERANCING PER ANSI
–T– PLANE
Y14.5M, 1982.
B F C 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
T S BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
4
INCHES MILLIMETERS
A DIM MIN MAX MIN MAX
Q A 0.570 0.620 14.48 15.75
1 2 3 B 0.380 0.405 9.66 10.28
U C 0.160 0.190 4.07 4.82
H D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
K G 0.095 0.105 2.42 2.66
Z H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
L R N 0.190 0.210 4.83 5.33
V Q 0.100 0.120 2.54 3.04
J R 0.080 0.110 2.04 2.79
G S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
D U 0.000 0.050 0.00 1.27
N V 0.045 ––– 1.15 –––
Z ––– 0.080 ––– 2.04

STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR

CASE 221A–06
TO–220AB
ISSUE Y

Motorola Bipolar Power Transistor Device Data 5


 
 
  
 

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6 Motorola Bipolar Power Transistor Device Data

*2N6487/D*
◊ 2N6487/D