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by MJ10022/D
SEMICONDUCTOR TECHNICAL DATA



$%
"! "($
$!&"! 40 AMPERE
NPN SILICON
$!%%&"$% (& % &&$ POWER DARLINGTON
TRANSISTORS
#'#
" 350 AND 400 VOLTS
250 WATTS
The MJ10022 and MJ10023 Darlington transistors are designed for high–voltage,
high–speed, power switching in inductive circuits where fall time is critical. They are
particularly suited for line–operated switchmode applications such as:
• AC and DC Motor Controls
• Switching Regulators
• Inverters
• Solenoid and Relay Drivers
• Fast Turn–Off Times
150 ns Inductive Fall Time @ 25_C (Typ) CASE 197A–05
300 ns Inductive Storage Time @ 25_C (Typ) TO–204AE (TO–3)
• Operating Temperature Range – 65 to + 200_C
≈ 100 ≈ 15
• 100_C Performance Specified for:
Reversed Biased SOA with Inductive Loads
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Switching Times with Inductive Loads
Saturation Voltages
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Leakage Currents
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Rating Symbol MJ10022 MJ10023 Unit
Collector–Emitter Voltage VCEO 350 400 Vdc
Collector–Emitter Voltage VCEV 450 600 Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Base Voltage VEB 80 Vdc
Collector Current — Continuous IC 40 Adc
— Peak (1) ICM 80
Base Current — Continuous IB 20 Adc
— Peak (1) IBM 40
Total Power Dissipation @ TC = 25_C PD 250 Watts
@ TC = 100_C 143
Derate above 25_C W/_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
1.43
_C
Operating and Storage Junction Temperature Range TJ, Tstg – 65 to + 200
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 0.7 _C/W
Maximum Lead Temperature for Soldering TL 275 _C
Purposes: 1/8″ from Case for 5 Seconds
v
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
 Motorola, Inc. 1995 1

Motorola Bipolar Power Transistor Device Data
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Sustaining Voltage (Table 1) MJ10022 VCEO(sus) 350 — — Vdc
(IC = 100 mA, IB = 0) MJ10023 400 — —
Collector Cutoff Current ICEV mAdc
(VCEV = Rated Value, VBE(off) = 1.5 Vdc) — — 0.25
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 150_C) — — 5.0
Collector Cutoff Current ICER — — 5.0 mAdc
(VCE = Rated VCEV, RBE = 50 Ω, TC = 100_C)
Emitter Cutoff Current
ÎÎÎÎÎÎ IEBO — — 175 mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VEB = 2.0 V, IC = O)
SECOND BREAKDOWN
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Second Breakdown Collector Current with Base Forward Biased IS/b See Figure 13
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Clamped Inductive SOA with Base Reverse Biased RBSOA See Figure 14
ON CHARACTERISTICS (1)
DC Current Gain hFE 50 — 600 —
(IC = 10 Adc, VCE = 5.0 V)
Collector–Emitter Saturation Voltage VCE(sat) Vdc
(IC = 20 Adc, IB = 1.0 Adc) — — 2.2
(IC = 40 Adc, IB = 5.0 Adc) — — 5.0
(IC = 20 Adc, IB = 10 Adc, TC = 100_C) — — 2.5
Base–Emitter Saturation Voltage VBE(sat) Vdc
(IC = 20 Adc, IB = 1.2 Adc) — — 2.5
(IC = 20 Adc, IB = 1.2 Adc, TC = 100_C) — — 2.5
Diode Forward Voltage Vf — 2.5 5.0 Vdc
(IF = 20 Adc)
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Output Capacitance Cob 150 — 600 pF
(VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz)
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Delay Time td — 0.03 0.2 µs
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ µs
Rise Time (VCC = 250 Vdc, IC = 20 A, IB1 = 1.0 Adc, tr — 0.4 1.2
VBE(off) = 5.0 V, tp = 50 µs,
ÎÎÎÎÎÎÎÎ
Storage Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
v
Duty Cycle 2.0%) ts — 0.9 2.5 µs
ÎÎÎÎÎÎÎÎ
Fall Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tf — 0.3 0.9 µs
Inductive Load, Clamped (Table 1)
Storage Time tsv — 1.9 4.4 µs
(ICM = 20 A, VCEM = 250 V, IB1 = 1.0 A,
Crossover Time tc — 0.6 2.0 µs
VBE(off) = 5 V, TC = 100_C)
Fall Time tfi — 0.3 — µs
Storage Time tsv — 1.0 — µs
(ICM = 20 A, VCEM = 250 V, IB1 = 1.0 A,
Crossover Time tc — 0.3 — µs
VBE(off) = 5 V, TC = 25_C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Fall Time
v ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(1) Pulse Test: PW = 300 µs, Duty Cycle 2%.
tfi — 0.15 — µs
2 Motorola Bipolar Power Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

300 5.0
TJ = 100°C 4.5 TJ = 100°C
200 4.0
hFE, DC CURRENT GAIN
3.5
TJ = 25°C 3.0 IC = 40 A
100 2.5
2.0 IC = 20 A
1.5
50 1.0 IC = 10 A
0.5
VCE = 5 V
30
0.4 1.0 2.0 5.0 10 20 40 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
IC, COLLECTOR CURRENT (AMPS) IB, BASE CURRENT (AMP)
Figure 1. DC Current Gain Figure 2. Collector Saturation Region
3.0
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
3.0
2.7 IC/IB = 10 2.7 IC/IB = 10
2.4 VBE(sat), BASE–EMITTER 2.4
2.1 2.1
1.8 1.8
VBE @ 25°C
1.5 1.5
1.2 1.2 VBE @ 100°C
VCE @ 25°C 0.9
0.9
0.6 0.6
VCE @ 100°C
0.3 0.3
0.4 1.0 2.0 5.0 10 20 40 0.4 1.0 2.0 5.0 10 20 40

IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 3. Collector–Emitter Saturation Voltage Figure 4. Base–Emitter Saturation Voltage
104 400
VCE = 250 V
IC, COLLECTOR CURRENT ( µA)
103
C, CAPACITANCE (pF)
200
TJ = 125°C
102
100°C
75°C
101 100
100
25°C
50
10 –1 40
– 0.2 0 + 0.2 + 0.4 + 0.6 + 0.8 4.5 10 20 50 100 200 400
VBE, BASE–EMITTER VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Collector Cutoff Region Figure 6. Cob, Output Capacitance
Motorola Bipolar Power Transistor Device Data 3

Table 1. Test Conditions for Dynamic Performance
VCEO(sus) RBSOA AND INDUCTIVE SWITCHING RESISTIVE SWITCHING
INDUCTIVE TEST CIRCUIT TURN–ON TIME

20 Ω
1 1
CONDITIONS
5V 2
TUT IB1
0 Rcoil
INPUT
1
1N4937
OR
2 INPUT Lcoil
EQUIVALENT IB1 adjusted to
SEE ABOVE FOR
Vclamp obtain the forced
DETAILED CONDITIONS VCC hFE desired
PW Varied to Attain
2 RS = TURN–OFF TIME
IC = 100 mA
0.1 Ω
Use inductive switching
driver as the input to
the resistive test circuit.
CIRCUIT
VALUES
Lcoil = 10 mH, VCC = 10 V Lcoil = 180 µH VCC = 250 V

Rcoil = 0.7 Ω Rcoil = 0.05 Ω RL = 12.5 Ω
Vclamp = VCEO(sus) VCC = 20 V Pulse Width = 25 µs
OUTPUT WAVEFORMS RESISTIVE TEST CIRCUIT

t1 Adjusted to
Obtain IC
TEST CIRCUITS
ICM tf Clamped TUT
t t1 [ Lcoil (ICM)
VCC
1 RL
t1 tf 2
VCC
t2 [ Lcoil (ICM)
Vclamp
VCEM Vclamp
Test Equipment
t
TIME t2 Scope — Tektronix
475 or Equivalent
10
ICM VCEM Vclamp 9.0
I B2(pk), BASE CURRENT (AMPS)
90% VCEM 90% ICM 8.0
IC tsv trv tfi tti 7.0
tc 6.0
5.0
VCE 10% VCEM 10% 4.0 IC = 20 A
IB 90% IB1 ICM 2% IC IB1 = 1 A
3.0
Vclamp = 250 V
2.0 TJ = 25°C
1.0
TIME 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0

VBE(off), REVERSE BASE VOLTAGE (VOLTS)
Figure 7. Inductive Switching Measurements Figure 8. Typical Peak Reverse Base Current
2.0
1.75 tsv @ 100°C ICM = 20 A

IB1 = 1 A
1.5 VCEM = 250 V
1.25
t, TIME ( µs)
tc @ 100°C
1.0
0.75 tsv @ 25°C
0.5
tc @ 25°C
0.25
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
VBE(off), BASE–EMITTER VOLTAGE (VOLTS)
Figure 9. Typical Inductive Switching Times

SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage times shown in Figure 7 to aid on the visual identity of these terms.
have been defined and apply to both current and voltage For the designer, there is minimal switching loss during
waveforms since they are in phase. However, for inductive storage time and the predominant switching power losses
loads which are common to SWITCHMODE power supplies occur during the crossover interval and can be obtained us-
and hammer drivers, current and voltage waveforms are not ing the standard equation from AN–222A:
in phase. Therefore, separate measurements must be made PSWT = 1/2 VCCIC(tc)f
on each waveform to determine the total switching time. For
this reason, the following new terms have been defined.
In general, trv + t fi `
t c . However, at lower test currents this
relationship may not be valid.
tsv = Voltage Storage Time, 90% IB1 to 10% VCEM As is common with most switching transistors, resistive
trv = Voltage Rise Time, 10 – 90% VCEM switching is specified at 25_C and has become a benchmark
tfi = Current Fall Time, 90 – 10% ICM for designers. However, for designers of high frequency con-
tti = Current Tail, 10 – 2% ICM verter circuits, the user orinented specifications which make
tc = Crossover Time, 10% VCEM to 10% ICM this a “SWITCHMODE” transistor are the inductive switching
An enlarged portion of the inductive switching waveform is speeds (tc and tsv) which are guaranteed at 100_C.
RESISTIVE SWITCHING
2.0 2.0
VCC = 250 V VCC = 250 V
1.0 IC/IB1 = 20 1.0 IC/IB1 = 20
ts
TJ = 25°C VBE(off) = 5 V
0.5 0.5
t, TIME ( µs)
t, TIME ( µs)
tf
0.2 0.2
tr
0.1 0.1
0.05
0.05
td 0.02
0.02
0.4 1.0 2.0 5.0 10 20 40 0.4 1.0 2.0 5.0 10 20 40
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 10. Typical Turn–On Switching Times Figure 11. Typical Turn–Off Switching Times
1.0
D = 0.5
0.5
RESISTANCE (NORMALIZED)
r(t), TRANSIENT THERMAL
0.2
0.2
0.1 P(pk)
0.1 RθJC(t) = r(t) RθJC
RθJC = 0.7°C/W MAX
0.05 D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN t1
SINGLE PULSE READ TIME AT t1 t2
TJ(pk) – TC = P(pk) RθJC(t)
DUTY CYCLE, D = t1/t2
0.01
0.1 1.0 10 100 1000 10000
t, TIME (ms)
Figure 12. Thermal Response

The Safe Operating Area figures shown in Figures 13 and 14 are SAFE OPERATING AREA INFORMATION
specified for these devices under the test conditions shown.
FORWARD BIAS
100
There are two limitations on the power handling ability of a
50 10 µs
transistor: average junction temperature and second break-
IC, COLLECTOR CURRENT (AMPS)
20 (TURN–ON SWITCHING)
down. Safe operating area curves indicate IC – VCE limits of
10
the transistor that must be observed for reliable operation;
5.0 i.e., the transistor must not be subjected to greater dissipa-
dc
2.0 tion than the curves indicate.
1.0 The data of Figure 13 is based on TC = 25_C; T J(pk) is
0.5 variable depending on power level. Second breakdown pulse
BONDING WIRE LTD
0.2 limits are valid for duty cycles to 10% but must be derated
THERMAL LTD
0.1 SECOND BREAKDOWN LTD when T C ≥ 25°C. Second breakdown limitations do not der-
0.05 ate the same as thermal limitations. Allowable current at the
TC = 25°C MJ10022 voltages shown on Figure 13 may be found at any case tem-
0.02 MJ10023 perature by using the appropriate curve on Figure 15.
0.01
1.0 2.0 5.0 10 20 50 100 200 400 T J(pk) may be calculated from the data in Figure 12. At
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
Figure 13. Maximum Forward Bias Safe imposed by second breakdown.
Operating Area
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases, with
ICM , PEAK COLLECTOR CURRENT (AMPS)
the base to emitter junction reverse biased. Under these

IC/IB ≥ 20
80 conditions the collector voltage must be held to a safe level
25°C ≤ TJ ≤ 100°C
70 at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
60 TURN–OFF LOAD LINE RC snubbing, load line shaping, etc. The safe level for these
FOR MJ10023
50 devices is specified as Reverse Bias Safe Operating Area
THE LOCUS FOR
40 MJ10022 IS 50 V LESS and represents the voltage–current condition allowable dur-
ing reverse biased turn–off. This rating is verified under
30
clamped conditions so that the device is never subjected to
20 an avalanche mode. Figure 14 gives the RBSOA character-
10 2 V ≤ VBE(off) ≤ 8 V istics.
RBE = 24 Ω
0
0 100 200 300 400 500 600 700
VCEM, PEAK COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 14. Maximum RBSOA, Reverse Bias
Safe Operating Area
100
SECOND BREAKDOWN
POWER DERATING FACTOR (%)
80 DERATING
60
40
THERMAL
DERATING
20
0
0 40 80 120 160 200
TC, CASE TEMPERATURE (°C)
Figure 15. Power Derating

PACKAGE DIMENSIONS
A
N
C NOTES:
–T– SEATING 1. DIMENSIONING AND TOLERANCING PER ANSI
PLANE
E Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D 2 PL K
INCHES MILLIMETERS
0.30 (0.012) M T Q M Y M DIM MIN MAX MIN MAX
A 1.530 REF 38.86 REF
U B 0.990 1.050 25.15 26.67
L –Y–
V C 0.250 0.335 6.35 8.51
D 0.057 0.063 1.45 1.60
2 E 0.060 0.070 1.53 1.77
G B G 0.430 BSC 10.92 BSC
H 1 H 0.215 BSC 5.46 BSC
K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC
–Q– N 0.760 0.830 19.31 21.08
Q 0.151 0.165 3.84 4.19
0.25 (0.010) M T Y M U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
CASE 197A–05
TO–204AE (TO–3)
ISSUE J

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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*MJ10022/D*
◊ MJ10022/D

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Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

 Motorola, Inc. 1995 1

2 Motorola Bipolar Power Transistor Device Data

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.4 1.0 2.0 5.0 10 20 40 0.4 1.0 2.0 5.0 10 20 40

Motorola Bipolar Power Transistor Device Data 3

INDUCTIVE TEST CIRCUIT TURN–ON TIME

Lcoil = 10 mH, VCC = 10 V Lcoil = 180 µH VCC = 250 V

OUTPUT WAVEFORMS RESISTIVE TEST CIRCUIT

ICM tf Clamped TUT

90% VCEM 90% ICM 8.0

IC tsv trv tfi tti 7.0

TIME 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0

1.75 tsv @ 100°C ICM = 20 A

0.75 tsv @ 25°C

Figure 9. Typical Inductive Switching Times

4 Motorola Bipolar Power Transistor Device Data

Figure 12. Thermal Response

Motorola Bipolar Power Transistor Device Data 5

the base to emitter junction reverse biased. Under these

6 Motorola Bipolar Power Transistor Device Data

Motorola Bipolar Power Transistor Device Data 7

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8 Motorola Bipolar Power Transistor Device Data

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