Semiconductor Technical Data: 16 Ampere Complementary Power Transistors 140 VOLTS 150 WATTS

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by 2N3773/D
SEMICONDUCTOR TECHNICAL DATA

The 2N3773 and 2N6609 are PowerBase power transistors designed for high *Motorola Preferred Device
power audio, disk head positioners and other linear applications. These devices can
also be used in power switching circuits such as relay or solenoid drivers, dc to dc 16 AMPERE
converters or inverters. COMPLEMENTARY
• High Safe Operating Area (100% Tested) 150 W @ 100 V POWER TRANSISTORS
• Completely Characterized for Linear Operation 140 VOLTS
• High DC Current Gain and Low Saturation Voltage 150 WATTS
hFE = 15 (Min) @ 8 A, 4 V
VCE(sat) = 1.4 V (Max) @ IC = 8 A, IB = 0.8 A
• For Low Distortion Complementary Designs
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
CASE 1–07
TO–204AA
(TO–3)
*MAXIMUM RATINGS
Rating Symbol Value Unit
Collector Emitter Voltage VCEO 140 Vdc
Collector–Emitter Voltage VCEX 160 Vdc
Collector–Base Voltage VCBO 160 Vdc
Emitter–Base Voltage VEBO 7 Vdc
Collector Current — Continuous IC 16 Adc
— Peak (1) 30
Base Current — Continuous IB 4 Adc
— Peak (1) 15
Total Power Dissipation @ TC = 25_C PD 150 Watts
Derate above 25_C 0.855 W/_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction
ÎÎÎÎ TJ, Tstg – 65 to + 200 _C
Temperature Range
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case
* Indicates JEDEC Registered Data.
RθJC 1.17 _C/W
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
 Motorola, Inc. 1995 1

Motorola Bipolar Power Transistor Device Data
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS (1)
*Collector–Emitter Breakdown Voltage VCEO(sus) 140 — Vdc
(IC = 0.2 Adc, IB = 0)
*Collector–Emitter Sustaining Voltage VCEX(sus) 160 — Vdc
(IC = 0.1 Adc, VBE(off) = 1.5 Vdc, RBE = 100 Ohms)
Collector–Emitter Sustaining Voltage VCER(sus) 150 — Vdc
(IC = 0.2 Adc, RBE = 100 Ohms)
*Collector Cutoff Current ICEO — 10 mAdc
(VCE = 120 Vdc, IB = 0)
*Collector Cutoff Current ICEX mAdc
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc) — 2
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C) — 10
Collector Cutoff Current ICBO — 2 mAdc
(VCB = 140 Vdc, IE = 0)
*Emitter Cutoff Current IEBO — 5 mAdc
(VBE = 7 Vdc, IC = 0)
ON CHARACTERISTICS (1)
DC Current Gain hFE —
*(IC = 8 Adc, VCE = 4 Vdc)
15 60
(IC = 16 Adc, VCE = 4 Vdc) 5 —
Collector–Emitter Saturation Voltage VCE(sat) Vdc
*(IC = 8 Adc, IB = 800 mAdc) — 1.4
(IC = 16 Adc, IB = 3.2 Adc) — 4
*Base–Emitter On Voltage VBE(on) — 2.2 Vdc
(IC = 8 Adc, VCE = 4 Vdc)
DYNAMIC CHARACTERISTICS
Magnitude of Common–Emitter |hfe| 4 — —
Small–Signal, Short–Circuit, Forward Current Transfer Ratio
(IC = 1 A, f = 50 kHz)
*Small–Signal Current Gain hfe 40 — —
(IC = 1 Adc, VCE = 4 Vdc, f = 1 kHz)
SECOND BREAKDOWN CHARACTERISTICS
Second Breakdown Collector Current with Base Forward Biased IS/b 1.5 — Adc
t = 1 s (non–repetitive), VCE = 100 V, See Figure 12
v
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle 2%.
* Indicates JEDEC Registered Data.
2 Motorola Bipolar Power Transistor Device Data

NPN PNP
300 300
200 150°C 200 150°C
25°C
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN

100 100
– 55°C – 55°C
70 25°C 70
50 50
30 VCE = 4 V 30 VCE = 4 V
20 20
10 10
7.0 7.0
5.0 5.0
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain Figure 2. DC Current Gain

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

2.0 2.0
IC = 4 A IC = 4 A
1.6 1.6 IC = 16 A
1.2 1.2
IC = 8 A
IC = 8 A
IC = 16 A
0.8 0.8
0.4 0.4
TC = 25°C TC = 25°C
0 0
0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0
IB, BASE CURRENT (AMPS) IB, BASE CURRENT (AMPS)
Figure 3. Collector Saturation Region Figure 4. Collector Saturation Region
2.0 2.0
IC/IB = 10 IC/IB = 10
1.6 1.6
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
1.2 1.2 VBE(sat)

VBE(sat)
0.8 25°C 0.8 25°C
150°C 150°C
150°C
0.4 150°C 0.4 25°C
VCE(sat) 25°C
VCE(sat)
0
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 5. “On” Voltage Figure 6. “On” Voltage
Motorola Bipolar Power Transistor Device Data 3

30
20 10 µs
40 µs
IC, COLLECTOR CURRENT (AMP)

10
100 µs
5.0 dc 200 µs
3.0 1.0 ms
2.0
100 ms
1.0
0.5
500 ms
0.3 BONDING WIRE LIMIT
0.2 THERMAL LIMIT
@ TC = 25°C, SINGLE PULSE
0.1
SECOND BREAKDOWN LIMIT
0.05
0.03
3.0 5.0 7.0 10 20 30 50 70 100 200 300
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 7. Forward Bias Safe Operating Area
There are two limitations on the power handling ability of a The data of Figure 7 is based on T J(pk) = 200_C; TC is
transistor: average junction temperature and second break- variable depending on conditions. Second breakdown pulse
down. Safe operating area curves indicate I C – V CE limits of limits are valid for duty cycles to 10% provided T J(pk)
the transistor that must be observed for reliable operation: < 200_C. At high case temperatures, thermal limitations will
i.e., the transistor must not be subjected to greater dissipa- reduce the power that can be handled to values less than the
tion than the curves indicate. limitations imposed by second breakdown.
100
POWER DERATING FACTOR (%)
80
60
THERMAL
40 DERATING
20
0
0 40 80 120 160 200
TC, CASE TEMPERATURE (°C)
Figure 8. Power Derating

PACKAGE DIMENSIONS
A
N NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
C Y14.5M, 1982.
–T– SEATING 2. CONTROLLING DIMENSION: INCH.
PLANE 3. ALL RULES AND NOTES ASSOCIATED WITH
E REFERENCED TO–204AA OUTLINE SHALL APPLY.
D 2 PL K
INCHES MILLIMETERS
0.13 (0.005) M T Q M Y M DIM MIN MAX MIN MAX
A 1.550 REF 39.37 REF
U B ––– 1.050 ––– 26.67
L –Y–
V C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
2 E 0.055 0.070 1.40 1.77
G B G 0.430 BSC 10.92 BSC
H 1 H 0.215 BSC 5.46 BSC
K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC
–Q– N ––– 0.830 ––– 21.08
Q 0.151 0.165 3.84 4.19
0.13 (0.005) M T Y M U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
Motorola Bipolar Power Transistor Device Data 5

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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*2N3773/D*
◊ 2N3773/D

Semiconductor Technical Data: 16 Ampere Complementary Power Transistors 140 VOLTS 150 WATTS

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(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.

 Motorola, Inc. 1995 1

2 Motorola Bipolar Power Transistor Device Data

hFE , DC CURRENT GAIN

Figure 1. DC Current Gain Figure 2. DC Current Gain

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 3. Collector Saturation Region Figure 4. Collector Saturation Region

1.2 1.2 VBE(sat)

Figure 5. “On” Voltage Figure 6. “On” Voltage

Motorola Bipolar Power Transistor Device Data 3

IC, COLLECTOR CURRENT (AMP)

Figure 7. Forward Bias Safe Operating Area

Figure 8. Power Derating

4 Motorola Bipolar Power Transistor Device Data

Motorola Bipolar Power Transistor Device Data 5

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6 Motorola Bipolar Power Transistor Device Data

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Semiconductor Technical Data: 16 Ampere Complementary Power Transistors 140 VOLTS 150 WATTS

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(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.

 Motorola, Inc. 1995 1

2 Motorola Bipolar Power Transistor Device Data

hFE , DC CURRENT GAIN

Figure 1. DC Current Gain Figure 2. DC Current Gain

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 3. Collector Saturation Region Figure 4. Collector Saturation Region

1.2 1.2 VBE(sat)

Figure 5. “On” Voltage Figure 6. “On” Voltage

Motorola Bipolar Power Transistor Device Data 3

IC, COLLECTOR CURRENT (AMP)

Figure 7. Forward Bias Safe Operating Area

Figure 8. Power Derating

4 Motorola Bipolar Power Transistor Device Data

Motorola Bipolar Power Transistor Device Data 5

How to reach us:

6 Motorola Bipolar Power Transistor Device Data

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