Semiconductor Technical Data: VCEO (Sus)

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by BD241B/D
SEMICONDUCTOR TECHNICAL DATA

. . . designed for use in general purpose amplifier and switching applications.
• Collector–Emitter Saturation Voltage —

VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc
• Collector–Emitter Sustaining Voltage —
VCEO(sus) = 80 Vdc (Min.) BD241B, BD242B
*Motorola Preferred Device
VCEO(sus) = 100 Vdc (Min.) BD241C, BD242C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
• High Current Gain — Bandwidth Product
fT = 3.0 MHz (Min) @ IC = 500 mAdc 3 AMPERE
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
• Compact TO–220 AB Package POWER TRANSISTORS
COMPLEMENTARY
SILICON
MAXIMUM RATINGS
80, 100 VOLTS
ÎÎÎÎÎÎÎÎÎÎÎ
BD241B BD241C 40 WATTS
Rating Symbol BD242B BD242C Unit
Collector–Emitter Voltage VCEO 80 100 Vdc
Collector–Emitter Voltage VCES 90 115 Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Voltage VEB 5.0 Vdc
Collector Current — Continuous IC 3.0 Adc
Peak 5.0 Adc
Base Current IB 1.0 Adc
Total Device Dissipation @ TC = 25_C PD 40 Watts
Derate above 25_C 0.32 W/_C
ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
Operating and Storage Junction TJ, Tstg – 65 to + 150 _C
CASE 221A–06
Temperature Range
TO–220AB
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RθJA 62.5 _C/W
Thermal Resistance, Junction to Case RθJC 3.125 _C/W
40
PD, POWER DISSIPATION (WATTS)
30
20
10
0
0 20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
 Motorola, Inc. 1995 1

Motorola Bipolar Power Transistor Device Data
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic Symbol Min. Max. Unit
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Sustaining Voltage1 VCEO Vdc
(IC = 30 mAdc, IB = 0) BD241B, BD242B 80
BD241C, BD242C 100
Collector Cutoff Current ICEO 0.3 mAdc
(VCE = 60 Vdc, IB = 0) BD241B, BD241C, BD242B, BD242C
Collector Cutoff Current ICES µAdc
(VCE = 80 Vdc, VEB = 0) BD241B, BD242B 200
(VCE = 100 Vdc, VEB = 0) BD241C, BD242C 200
Emitter Cutoff Current IEBO mAdc
(VBE = 5.0 Vdc, IC = 0) 1.0
ON CHARACTERISTICS1
DC Current Gain hFE
(IC = 1.0 Adc, VCE = 4.0 Vdc) 25
(IC = 3.0 Adc, VCE = 4.0 Vdc) 10
Collector–Emitter Saturation Voltage VCE(sat) Vdc
(IC = 3.0 Adc, IB = 600 Adc)
1.2
Base–Emitter On Voltage VBE(on) Vdc
(IC = 3.0 Adc, VCE = 4.0 Vdc) 1.8
DYNAMIC CHARACTERISTICS
Current Gain – Bandwidth Product2 fT MHz
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz) 3.0
Small–Signal Current Gain hfe
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz) 20
v
1 Pulse Test: Pulse Width
2 fT = |hfe| • ftest.
v 300 µs, Duty Cycle 2.0%.
2.0
TURN-ON PULSE VCC IC/IB = 10
RL 1.0
APPROX TJ = 25°C
+ 11 V Vin SCOPE 0.7 tr @ VCC = 30 V
RK 0.5
Vin 0 Cjd % Ceb
t, TIME ( µs)
0.3
VEB(off) tr @ VCC = 10 V
t1
– 4.0 V
v
t3
APPROX t1 7.0 ns
+ 11 V t t
100 t2 500 µs
0.1
t
t3 15 ns
0.07
0.05
td @ VBE(off) = 2.0 V
Vin
0.03
t2 [
DUTY CYCLE 2.0% 0.02
0.03 0.05 0.07 0.1 0.3 0.5 0.7 1.0 3.0
TURN-OFF PULSE APPROX – 9.0 V
IC, COLLECTOR CURRENT (AMP)
Figure 2. Switching Time Equivalent Circuit Figure 3. Turn–On Time
2 Motorola Bipolar Power Transistor Device Data

1.0
0.7
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.5
0.5
0.3
0.2
0.2
(NORMALIZED)
0.1
0.1 P(pk)
0.05 ZθJC (t) = r(t) RθJC
0.07 RθJC = 3.125°C/W MAX
0.05 D CURVES APPLY FOR POWER
0.02
0.03 PULSE TRAIN SHOWN
t1
READ TIME AT t1 t2
0.02 0.01 TJ(pk) – TC = P(pk) ZθJC(t)
SINGLE PULSE DUTY CYCLE, D = t1/t2
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k
t, TIME (ms)
Figure 4. Thermal Response

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
10
There are two limitations on the power handling ability of a
5.0 transistor: average junction temperature and second break-
1.0 ms 100 µs down. Safe operating area curves indicate IC – VCE limits of
5.0 ms the transistor that must be observed for reliable operation,
2.0 i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
1.0 SECOND BREAKDOWN The data of Figure 5 is based on TJ(pk) = 150_C; TC is
0.5
v
LIMITED @ TJ 150°C variable depending on conditions. Second breakdown pulse
THERMAL LIMITATION @ TC = 25°C limits are valid for duty cycles to 10% provided T J(pk)
BONDING WIRE LIMITED
CURVES APPLY BELOW
v 150_C, TJ(pk) may be calculated from the data in Fig-
0.2 ure 4. At high case temperatures, thermal limitations will
RATED VCEO BD241B, BD242B reduce the power that can be handled to values less than the
BD241C, BD242C
0.1 limitations imposed by second breakdown.
5.0 10 20 50 100
IC, COLLECTOR CURRENT (AMP)
Figure 5. Active Region Safe Operating Area
3.0 300
IB1 = IB2
2.0 TJ = + 25°C
ts′ IC/IB = 10
ts′ = ts – 1/8 tf 200
1.0 TJ = 25°C
0.7 tf @ VCC = 30 V
CAPACITANCE (pF)
0.5
t, TIME ( µs)
0.3 100
tf @ VCC = 10 V Ceb
0.2
70
0.1
0.07 50 Ccb
0.05
0.03 30
0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 40
IC, COLLECTOR CURRENT (AMP) VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Turn–Off Time Figure 7. Capacitance
Motorola Bipolar Power Transistor Device Data 3

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

500 2.0
300 VCE = 2.0 V TJ = 25°C
TJ = 150°C
1.6
hFE, DC CURRENT GAIN
25°C
100
70 1.2
– 55°C IC = 0.3 A 1.0 A 3.0 A
50
30 0.8
0.4
10
7.0
5.0 0
0.03 0.05 0.07 0.1 0.3 0.5 0.7 1.0 3.0 1.0 2.0 5.0 10 20 50 100 200 500 1000
IC, COLLECTOR CURRENT (AMP) IB, BASE CURRENT (mA)
Figure 8. DC Current Gain Figure 9. Collector Saturation Region
1.4 + 2.5
θV, TEMPERATURE COEFFICIENTS (mV/°C)

TJ = 25°C + 2.0 *APPLIES FOR IC/IB ≤ 5.0
1.2 TJ = – 65°C TO + 150°C
+ 1.5
V, VOLTAGE (VOLTS)
1.0 + 1.0
+ 0.5 *θVC FOR VCE(sat)
0.8
VBE(sat) @ IC/IB = 10 0
0.6 – 0.5
VBE @ VCE = 2.0 V
0.4 – 1.0
– 1.5
0.2 VCE(sat) @ IC/IB = 10 θVB FOR VBE
– 2.0
0 – 2.5
0.003 0.005 0.01 0.020.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 0.003 0.005 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages Figure 11. Temperature Coefficients
RBE , EXTERNAL BASE–EMITTER RESISTANCE (OHMS)
103 107
VCE = 30 V
VCE = 30 V IC = 10 x ICES
102
IC, COLLECTOR CURRENT ( µA)
106
TJ = 150°C
101
105
100 100°C IC ≈ ICES
IC = 2 x ICES
104
10–1
REVERSE FORWARD
10– 2 103 (TYPICAL ICES VALUES
25°C
OBTAINED FROM FIGURE 12)
ICES
10– 3 102
– 0.4 – 0.3 – 0.2 – 0.1 0 + 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6 20 40 60 80 100 120 140 160
VBE, BASE–EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Collector Cut–Off Region Figure 13. Effects of Base–Emitter Resistance

PACKAGE DIMENSIONS
NOTES:
SEATING 1. DIMENSIONING AND TOLERANCING PER ANSI
–T– PLANE
Y14.5M, 1982.
B F C 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
T S BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
4
INCHES MILLIMETERS
A DIM MIN MAX MIN MAX
Q A 0.570 0.620 14.48 15.75
1 2 3 B 0.380 0.405 9.66 10.28
U C 0.160 0.190 4.07 4.82
H D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
K G 0.095 0.105 2.42 2.66
Z H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
L R N 0.190 0.210 4.83 5.33
V Q 0.100 0.120 2.54 3.04
J R 0.080 0.110 2.04 2.79
G S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
D U 0.000 0.050 0.00 1.27
N V 0.045 ––– 1.15 –––
Z ––– 0.080 ––– 2.04
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
CASE 221A–06
TO–220AB
ISSUE Y
Motorola Bipolar Power Transistor Device Data 5

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applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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*BD241B/D*
◊ BD241B/D
This datasheet has been download from:
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Datasheets for electronics components.

Semiconductor Technical Data: VCEO (Sus)

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Figure 1. Power Derating

 Motorola, Inc. 1995 1

Figure 2. Switching Time Equivalent Circuit Figure 3. Turn–On Time

2 Motorola Bipolar Power Transistor Device Data

Figure 4. Thermal Response

Figure 5. Active Region Safe Operating Area

Figure 6. Turn–Off Time Figure 7. Capacitance

Motorola Bipolar Power Transistor Device Data 3

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

θV, TEMPERATURE COEFFICIENTS (mV/°C)

4 Motorola Bipolar Power Transistor Device Data

Motorola Bipolar Power Transistor Device Data 5

How to reach us:

6 Motorola Bipolar Power Transistor Device Data

Datasheets for electronics components.

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Semiconductor Technical Data: VCEO (Sus)

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Semiconductor Technical Data: VCEO (Sus)

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

Figure 1. Power Derating

 Motorola, Inc. 1995 1

Figure 2. Switching Time Equivalent Circuit Figure 3. Turn–On Time

2 Motorola Bipolar Power Transistor Device Data

Figure 4. Thermal Response

Figure 5. Active Region Safe Operating Area

Figure 6. Turn–Off Time Figure 7. Capacitance

Motorola Bipolar Power Transistor Device Data 3

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

θV, TEMPERATURE COEFFICIENTS (mV/°C)

4 Motorola Bipolar Power Transistor Device Data

Motorola Bipolar Power Transistor Device Data 5

How to reach us:

6 Motorola Bipolar Power Transistor Device Data

Datasheets for electronics components.

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