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Plastic Medium−Power
NPN Silicon Transistor
This device is useful for high−voltage general purpose applications.
Features
• Suitable for Transformerless, Line−Operated Equipment http://onsemi.com
• Thermopad Construction Provides High Power Dissipation Rating
for High Reliability 0.5 AMPERE
• Pb−Free Package is Available* POWER TRANSISTOR
NPN SILICON
MAXIMUM RATINGS 300 VOLTS, 20 WATTS
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Rating Symbol Value Unit
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Collector−Emitter Voltage VCEO 300 Vdc
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Emitter−Base Voltage VEB 3.0 Vdc
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Collector Current − Continuous IC 500 mAdc
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Total Power Dissipation @ TC = 25_C PD 20 W TO−225
Derate above 25_C 0.16 mW/_C
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CASE 77
Operating and Storage Junction TJ, Tstg –65 to +150 _C STYLE 1
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Temperature Range 3
2 1
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THERMAL CHARACTERISTICS
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Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case qJC 6.25 _C/W MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
YWW
JE340G
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
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Characteristic
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Symbol Min Max Unit
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OFF CHARACTERISTICS
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Y = Year
Collector−Emitter Sustaining Voltage VCEO(sus) 300 − Vdc WW = Work Week
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(IC = 1.0 mAdc, IB = 0)
JE340 = Device Code
Collector Cutoff Current ICBO − 100 mAdc G = Pb−Free Package
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(VCB = 300 Vdc, IE = 0)
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Emitter Cutoff Current IEBO − 100 mAdc
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(VEB = 3.0 Vdc, IC = 0) ORDERING INFORMATION
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ON CHARACTERISTICS Device Package Shipping
DC Current Gain hFE 30 240 −
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(IC = 50 mAdc, VCE = 10 Vdc) MJE340 TO−225 500 Units/Box
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
32 1.0
28 TJ = 25°C
PD, POWER DISSIPATION (WATTS)
V, VOLTAGE (VOLTS)
20 0.6 VBE @ VCE = 10 V
16
12 0.4
ACTIVE−REGION SAFE OPERATING AREA There are two limitations on the power handling ability of
a transistor: average junction temperature and second
1.0 breakdown. Safe operating area curves indicate IC − VCE
10 ms limits of the transistor that must be observed for reliable
IC, COLLECTOR CURRENT (AMP)
Figure 3. MJE340
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MJE340
10 2.0
hFE , DC CURRENT GAIN, NORMALIZED 7.0 TJ = 25°C
5.0 150°C
VCE = 1.0 Vdc 1.6 TJ = 25°C
3.0
VOLTAGE (VOLTS)
2.0
−55 °C 1.2
1.0
0.7 0.8 VBE(sat) @ IC/IB = 10
0.5
VBE(on) @ VCE = 1.0 V
0.3
0.4
0.2
VCE(sat) @ IC/IB = 10
0.1 0
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
1.0
THERMAL RESISTANCE (NORMALIZED)
0.7
D = 0.5
0.5
r(t), EFFECTIVE TRANSIENT
0.3
0.2
0.2 P(pk)
qJC(t) = r(t) qJC
0.1
qJC = 3.12°C/W MAX
0.1 0.05 D CURVES APPLY FOR POWER
0.07 PULSE TRAIN SHOWN
0.02 t1
0.05 READ TIME AT t1 t2
0.03 TJ(pk) − TC = P(pk) qJC(t)
0.01 DUTY CYCLE, D = t1/t2
0.02
SINGLE PULSE
0.01
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 50 100 200 500 1000
t, TIME OR PULSE WIDTH (ms)
300
200 VCE = 10 V
VCE = 2.0 V
hFE , DC CURRENT GAIN
100 TJ = 150°C
70
+100°C
50
+25 °C
30
20 −55 °C
10
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mAdc)
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MJE340
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE Z
NOTES:
−B− 1. DIMENSIONING AND TOLERANCING PER ANSI
U F C Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
Q 3. 077−01 THRU −08 OBSOLETE, NEW STANDARD
M 077−09.
−A−
INCHES MILLIMETERS
1 2 3 DIM MIN MAX MIN MAX
A 0.425 0.435 10.80 11.04
B 0.295 0.305 7.50 7.74
H C 0.095 0.105 2.42 2.66
K D 0.020 0.026 0.51 0.66
F 0.115 0.130 2.93 3.30
G 0.094 BSC 2.39 BSC
H 0.050 0.095 1.27 2.41
J 0.015 0.025 0.39 0.63
V J K 0.575 0.655 14.61 16.63
M 5_ TYP 5 _ TYP
G R Q 0.148 0.158 3.76 4.01
S 0.25 (0.010) M A M B M R 0.045 0.065 1.15 1.65
S 0.025 0.035 0.64 0.88
D 2 PL U 0.145 0.155 3.69 3.93
V 0.040 −−− 1.02 −−−
0.25 (0.010) M A M B M
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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