MJ15003 (NPN), MJ15004 (PNP) Complementary Silicon Power Transistors

MJ15003 (NPN),
MJ15004 (PNP)
Preferred Device
Complementary Silicon
Power Transistors
The MJ15003 and MJ15004 are PowerBase power transistors
designed for high power audio, disk head positioners and other linear http://onsemi.com
applications.
• High Safe Operating Area (100% Tested) – 20 AMPERE
5.0 A @ 50 V
POWER TRANSISTORS
• For Low Distortion Complementary Designs
COMPLEMENTARY SILICON
• High DC Current Gain –
hFE = 25 (Min) @ IC = 5 Adc 140 V 250 W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
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MAXIMUM RATINGS MARKING
DIAGRAM
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ÎÎÎÎ
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Rating Symbol Value Unit
ÎÎÎÎ
ÎÎÎÎ
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Collector–Emitter Voltage VCEO 140 Vdc
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector–Base Voltage VCBO 140 Vdc xxxxx
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Emitter–Base Voltage VEBO 5 Vdc YYWW
TO–204AA (TO–3)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector Current – Continuous IC 20 Adc
CASE 1–07
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Base Current – Continuous IB 5 Adc
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Emitter Current – Continuous IE 25 Adc xx = Specific Device Code
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
A = Assembly Location
Total Power Dissipation @ TC = 25°C PD 250 Watts
Derate above 25°C 1.43 W/°C WL, L = Wafer Lot
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
YY, Y = Year
Operating and Storage Junction TJ, Tstg –65 to +200 °C WW, W = Work Week
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Temperature Range
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Characteristic Symbol Max Unit
ORDERING INFORMATION
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Device Package Shipping
Thermal Resistance, Junction–to–Case RJC 0.70 °C/W
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
MJ15003 TO–204AA (TO–3) 100 Foams
Maximum Lead Temperature for Soldering TL 265 °C
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Purposes: MJ15004 TO–204AA (TO–3) 100 Foams
1/16″ from Case for 10 seconds
Preferred devices are recommended choices for future use

and best overall value.
 Semiconductor Components Industries, LLC, 2002 1 Publication Order Number:

June, 2002 – Rev. 10 MJ15003/D
MJ15003 (NPN), MJ15004 (PNP)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
*ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ Characteristic Symbol Min Max Unit
ÎÎÎÎ
ÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎ
Collector Emitter Sustaining Voltage (Note 1) VCEO(sus) 140 – Vdc
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
(IC = 200 mAdc, IB = 0)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
Collector Cutoff Current ICEX
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc) – Adc
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
100
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C) – 2 mAdc
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎ
Collector Cutoff Current
ÎÎÎ
ÎÎÎ
(VCE = 140 Vdc, IB = 0)
ICEO – 250 Adc
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
Emitter Cutoff Current IEBO – 100 Adc
(VEB = 5 Vdc, IC = 0)
ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎ
SECOND BREAKDOWN
ÎÎÎ
ÎÎÎ
Second Breakdown Collector Current with Base Forward Baised IS/b Adc
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
(VCE = 50 Vdc, t = 1 s (non repetitive)) 5.0 –
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
(VCE = 100 Vdc, t = 1 s (non repetitive)) 1.0 –
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ON CHARACTERISTICS
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
DC Current Gain hFE 25 150
(IC = 5 Adc, VCE = 2 Vdc)
ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎ
Collector Emitter Saturation Voltage
ÎÎÎ
ÎÎÎ
(IC = 5 Adc, IB = 0.5 Adc)
VCE(sat) – 1.0 Vdc
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
Base Emitter On Voltage VBE(on) – 2.0 Vdc
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
(IC = 5 Adc, VCE = 2 Vdc)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
Current Gain — Bandwidth Product fT 2.0 – MHz
(IC = 0.5 Adc, VCE = 10 Vdc, ftest = 0.5 MHz)
ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
Output Capacitance
ÎÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎ
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%.
cob – 1000 pF
20 There are two limitations on the powerhandling ability of

15 TC = 25°C a transistor: average junction temperature and second
10
IC, COLLECTOR CURRENT (AMP)
breakdown. Safe operating area curves indicate IC – VCE

7
limits of the transistor that must be observed for reliable
5
operation; i.e., the transistor must not be subjected to greater
3 dissipation than the curves indicate.
2 TJ = 200°C The data of Figure 1 is based on TJ(pk) = 200°C; TC is
BONDING WIRE LIMITED
variable depending on conditions. At high case
1 THERMAL LIMITATION (SINGLE PULSE)
SECOND BREAKDOWN LIMITED temperatures, thermal limitations will reduce the power that
0.7
CURVES APPLY BELOW RATED VCEO can be handled to values less than the limitations imposed by
0.5
second breakdown.
0.3
0.2
2 3 5 7 10 20 30 50 70 100 150 200
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. Active–Region Safe Operating Area
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2
MJ15003 (NPN), MJ15004 (PNP)
PACKAGE DIMENSIONS
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
A NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
N Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C 3. ALL RULES AND NOTES ASSOCIATED WITH
–T– SEATING REFERENCED TO-204AA OUTLINE SHALL APPLY.
PLANE
E
INCHES MILLIMETERS
D 2 PL K DIM MIN MAX MIN MAX
A 1.550 REF 39.37 REF
0.13 (0.005) M T Q M Y M
B --- 1.050 --- 26.67
C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
E 0.055 0.070 1.40 1.77
G 0.430 BSC 10.92 BSC
U H 0.215 BSC 5.46 BSC
L –Y– K 0.440 0.480 11.18 12.19
V
L 0.665 BSC 16.89 BSC
2 N --- 0.830 --- 21.08
Q 0.151 0.165 3.84 4.19
G B U 1.187 BSC 30.15 BSC
H 1 V 0.131 0.188 3.33 4.77
STYLE 1:
–Q– PIN 1. BASE
2. EMITTER
0.13 (0.005) M T Y M CASE: COLLECTOR
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3
MJ15003 (NPN), MJ15004 (PNP)
PowerBase is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION

Literature Fulfillment: JAPAN: ON Semiconductor, Japan Customer Focus Center
Literature Distribution Center for ON Semiconductor 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
P.O. Box 5163, Denver, Colorado 80217 USA Phone: 81–3–5740–2700
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Email: r14525@onsemi.com
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada
ON Semiconductor Website: http://onsemi.com
Email: ONlit@hibbertco.com
For additional information, please contact your local
N. American Technical Support: 800–282–9855 Toll Free USA/Canada
Sales Representative.
http://onsemi.com MJ15003/D
4
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Datasheets for electronics components.

MJ15003 (NPN), MJ15004 (PNP) Complementary Silicon Power Transistors

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MJ15003 (NPN), MJ15004 (PNP) Complementary Silicon Power Transistors

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Copyright:

Available Formats

MJ15003 (NPN),

Preferred devices are recommended choices for future use

 Semiconductor Components Industries, LLC, 2002 1 Publication Order Number:

20 There are two limitations on the powerhandling ability of

breakdown. Safe operating area curves indicate IC – VCE

PowerBase is a trademark of Semiconductor Components Industries, LLC.

PUBLICATION ORDERING INFORMATION

Datasheets for electronics components.

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