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by 2N4918/D
SEMICONDUCTOR TECHNICAL DATA

 !      

  
. . . designed for driver circuits, switching, and amplifier applications. These
  
high–performance plastic devices feature: *Motorola Preferred Device
• Low Saturation Voltage — VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp
• Excellent Power Dissipation Due to Thermopad Construction — 3 AMPERE

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
PD = 30 W @ TC = 25_C GENERAL–PURPOSE
• Excellent Safe Operating Area POWER TRANSISTORS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
• Gain Specified to IC = 1.0 Amp 40 – 80 VOLTS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
• Complement to NPN 2N4921, 2N4922, 2N4923 30 WATTS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
*MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Ratings Symbol 2N4918 2N4919 2N4920 Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage VCEO 40 60 80 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Base Voltage VCB 40 60 80 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Voltage VEB 5.0 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current — Continuous (1) IC* 1.0 Adc
3.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
CASE 77–08

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current IB 1.0 Adc TO–225AA TYPE

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation @ TC = 25°C PD 30 Watts
Derate above 25_C 0.24 W/_C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ
Operating & Storage Junction TJ, Tstg – 65 to + 150 _C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ
Temperature Range

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS (2)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic Symbol Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Case θJC 4.16 _C/W
* Indicates JEDEC Registered Data for 2N4918 Series.
(1) The 1.0 Amp maximum IC value is based upon JEDEC current gain requirements.
The 3.0 Amp maximum value is based upon actual current–handling capability of the
device (See Figure 5).
(2) Recommend use of thermal compound for lowest thermal resistance.

40
PD, POWER DISSIPATION (WATTS)

30

20

10

0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7

 Motorola, Inc. 1995 1

Motorola Bipolar Power Transistor Device Data
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
 
 

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic Symbol Min Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Sustaining Voltage (1) VCEO(sus) Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 0.1 Adc, IB = 0) 2N4918 40 —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
2N4919 60 —
2N4920 80 —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current ICEO mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCE = 20 Vdc, IB = 0) 2N4918 — 0.5

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCE = 30 Vdc, IB = 0) 2N4919 — 0.5
(VCE = 40 Vdc, IB = 0) 2N4920 —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
0.5
Collector Cutoff Current ICEX mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCE = Rated VCEO, VBE(off) = 1.5 Vdc) — 0.1

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCE = Rated VCEO, VBE(off) = 1.5 Vdc, TC = 125_C) — 0.5

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current ICBO — 0.1 mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCB = Rated VCB, IE = 0)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current IEBO — 1.0 mAdc
(VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain (1) hFE —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 50 mAdc, VCE = 1.0 Vdc) 40 —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 500 mAdc, VCE = 1.0 Vdc) 30 150
(IC = 1.0 Adc, VCE = 1.0 Vdc) 10 —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Saturation Voltage (1) VCE(sat) — 0.6 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 1.0 Adc, IB = 0.1 Adc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base–Emitter Saturation Voltage (1) VBE(sat) — 1.3 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 1.0 Adc, IB = 0.1 Adc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base–Emitter On Voltage (1) VBE(on) — 1.3 Vdc
(IC = 1.0 Adc, VCE = 1.0 Vdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SMALL–SIGNAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current–Gain — Bandwidth Product (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz) fT 3.0 — MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz) Cob — 100 pF

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
* Indicates JEDEC Registered Data.
[
(1) Pulse Test: PW [
ÎÎÎ
Small–Signal Current Gain (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

300 µs, Duty Cycle 2.0%

hfe 25 — —

VBE(off)
5.0
0 VCC = 30 V IC/IB = 10, UNLESS NOTED
Vin VCC 3.0
RC IC/IB = 20 TJ = 25°C
APPROX 2.0 TJ = 150°C
–11 V Vin SCOPE
t1 RB 1.0
t, TIME ( µs)

Cjd << Ceb VCC = 30 V

0.7 tr
APPROX 9.0 V 0.5 VCC = 60 V
t2 + 4.0 V
0.3 td VCC = 60 V
RB and RC 0.2 VBE(off) = 2.0 V
Vin 0 varied to
t1 < 15 ns obtain desired
100 < t2 < 500 µs current levels
0.1
VCC = 30 V
APPROX 0.07
t3 < 15 ns VBE(off) = 0
–11 V 0.05
t3 DUTY CYCLE ≈ 2.0% 10 20 30 50 70 100 200 300 500 700 1000
TURN–OFF PULSE IC, COLLECTOR CURRENT (mA)

Figure 2. Switching Time Equivalent Test Circuit Figure 3. Turn–On Time

2 Motorola Bipolar Power Transistor Device Data

  
 
1.0
0.7
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.5
0.5

0.3 0.2
0.2
(NORMALIZED)

0.1
θJC(t) = r(t) θJC P(pk)
0.1 0.05
θJC = 4.16°C/W MAX
0.07 0.01 D CURVES APPLY FOR POWER
0.05 PULSE TRAIN SHOWN t1
0.03 READ TIME AT t1 t2
SINGLE PULSE
TJ(pk) – TC = P(pk) θJC(t) DUTY CYCLE, D = t1/t2
0.02

0.01
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000
t, TIME (ms)

Figure 4. Thermal Response

10

1.0 ms 100 µs There are two limitations on the power handling ability of a
IC, COLLECTOR CURRENT (AMP)

5.0 5.0 ms transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – V CE opera-
2.0 TJ = 150°C tion i.e., the transistor must not be subjected to greater
dc dissipation than the curves indicate.
1.0 The data of Figure 5 is based on T J(pk) = 150_C; T C is
variable depending on conditions. Second breakdown pulse
SECOND BREAKDOWN LIMITED
limits are valid for duty cycles to 10% provided T J(pk)
0.5 BONDING WIRE LIMITED
THERMALLY LIMIT @ TC = 25°C v 150_C. At high case temperatures, thermal limitations will
PULSE CURVES APPLY BELOW
reduce the power that can be handled to values less than the
0.2
RATED VCEO limitations imposed by second breakdown.
0.1
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 5. Active–Region Safe Operating Area

5.0 5.0
IC/IB = 20 TJ = 25°C
3.0 3.0
IC/IB = 20 TJ = 150°C
2.0 2.0 VCC = 30 V
t s′ , STORAGE TIME ( µs)

IB1 = IB2
t f , FALL TIME ( µs)

1.0 IC/IB = 10 1.0

0.7 0.7
0.5 0.5
IC/IB = 10
0.3 ts′ = ts – 1/8 tf 0.3
0.2 TJ = 25°C 0.2
TJ = 150°C
0.1 IB1 = IB2 0.1
0.07 0.07
0.05 0.05
10 20 30 50 70 100 200 300 500 700 1000 10 20 30 50 70 100 200 300 500 700 1000
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 6. Storage Time Figure 7. Fall Time

Motorola Bipolar Power Transistor Device Data 3

 
 
TYPICAL DC CHARACTERISTICS

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

1000 1.0
700 VCE = 1.0 V
500 IC = 0.1 A 0.25 A 0.5 A 1.0 A
0.8
TJ = 150°C
hFE, DC CURRENT GAIN

300
200
0.6
25°C
100 TJ = 25°C
70 – 55°C 0.4
50
30
0.2
20

10 0
2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 2000 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200
IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA)
Figure 8. Current Gain Figure 9. Collector Saturation Region
RBE , EXTERNAL BASE–EMITTER RESISTANCE (OHMS)

108 1.5
IC = 10 ICES VCE = 30 V

107 1.2 TJ = 25°C

VOLTAGE (VOLTS)

106 0.9
IC ≈ ICES
VBE(sat) @ IC/IB = 10
105 IC = 2x ICES 0.6
VBE @ VCE = 2.0 V
ICES VALUES
104 OBTAINED FROM 0.3
FIGURE 13
VCE(sat) @ IC/IB = 10
103 0
0 30 60 90 120 150 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 2000
TJ, JUNCTION TEMPERATURE (°C) IC, COLLECTOR CURRENT (mA)
Figure 10. Effects of Base–Emitter Resistance Figure 11. “On” Voltage

102 + 2.5
hFE @ VCE + 1.0 V
TEMPERATURE COEFFICIENTS (mV/ °C)

+ 2.0
*APPLIES FOR IC/IB <
101 2
IC, COLLECTOR CURRENT ( µA)

+ 1.5
TJ = 150°C
100 + 1.0
TJ = 100°C to 150°C
+ 0.5
*θVC FOR VCE(sat)
10–1 0
TJ = – 55°C to +100°C
100°C
– 0.5
10– 2 IC = ICES – 1.0
VCE = 30 V – 1.5
104
θVB FOR VBE
25°C – 2.0
103 REVERSE FORWARD
– 2.5
– 0.2 – 0.1 0 + 0.1 + 0.2 + 0.3 + 0.4 + 0.5 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 2000
VBE, BASE–EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
Figure 12. Collector Cut–Off Region Figure 13. Temperature Coefficients

4 Motorola Bipolar Power Transistor Device Data

  
 
PACKAGE DIMENSIONS

–B–
NOTES:
U F C 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
Q 2. CONTROLLING DIMENSION: INCH.
M
–A– INCHES MILLIMETERS
DIM MIN MAX MIN MAX
1 2 3 A 0.425 0.435 10.80 11.04
B 0.295 0.305 7.50 7.74
C 0.095 0.105 2.42 2.66
H D 0.020 0.026 0.51 0.66
K F 0.115 0.130 2.93 3.30
G 0.094 BSC 2.39 BSC
H 0.050 0.095 1.27 2.41
J 0.015 0.025 0.39 0.63
K 0.575 0.655 14.61 16.63
V J M 5 _ TYP 5 _ TYP
Q 0.148 0.158 3.76 4.01
G R R 0.045 0.055 1.15 1.39
S 0.025 0.035 0.64 0.88
S 0.25 (0.010) M A M B M
U 0.145 0.155 3.69 3.93
V 0.040 ––– 1.02 –––
D 2 PL
0.25 (0.010) M A M B M STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE

CASE 77–08
TO–225AA TYPE
ISSUE V

Motorola Bipolar Power Transistor Device Data 5

 
 

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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6 Motorola Bipolar Power Transistor Device Data

*2N4918/D*
◊ 2N4918/D