Professional Documents
Culture Documents
Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
TPC8114
Lithium Ion Battery Applications
Unit: mm
Notebook PC Applications
Portable Equipment Applications
Note: (Note 1), (Note 2), (Note 3) and (Note 4): See the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
1 2006-11-15
TPC8114
Thermal Characteristics
Marking (Note 5)
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2:
(a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)
FR-4 FR-4
25.4 × 25.4 × 0.8 25.4 × 25.4 × 0.8
(Unit: mm) (Unit: mm)
(a) (b)
Week of manufacture
(01 for the first week of a year: sequential number up to 52 or 53)
Year of manufacture
(The last digit of a year)
2 2006-11-15
TPC8114
Electrical Characteristics (Ta = 25°C)
Rise time tr 0V ⎯ 25 ⎯
VGS ID = −9 A
−10 V VOUT
Turn-ON time ton ⎯ 36 ⎯
RL = 1.7 Ω
Switching time ns
4.7 Ω
Fall time tf ⎯ 235 ⎯
VDD ∼
− −15 V
Turn-OFF time toff Duty < ⎯ 625 ⎯
= 1%, tw = 10 µs
Drain reverse
Pulse (Note 1) IDRP ⎯ ⎯ ⎯ −72 A
current
Forward voltage (diode) VDSF IDR = −18 A, VGS = 0 V ⎯ ⎯ 1.2 V
3 2006-11-15
TPC8114
ID – VDS ID – VDS
−20 −50
−2.8 Common source −4 −3 −2.8
−4
Ta = 25°C
−3 −2.6 Pulse test −10
−16 −40 −8
−10 Common source
−6
(A)
(A)
−8 −2.6 Ta = 25°C
Pulse test
−12
ID
ID
−30
−2.4
Drain current
Drain current
−2.4
−6
−8 −20
−2.2 −2.2
−4 −10
VGS = −2 V VGS = −2 V
0 0
0 −0.2 −0.4 −0.6 −0.8 −1.0 0 −1 −2 −3 −4 −5
−40 −0.4
(A)
VDS
ID
−30 −0.3
Drain-source voltage
Drain current
−20 −0.2
25
−4.5
−10 −0.1 −9
100 ID = −18 A
Ta = −55°C
0 0
0 −1 −2 −3 −4 −5 0 −4 −8 −12 −16 −20
100 100
(S)
Forward transfer admittance ⎪Yfs⎪
Ta = −55°C
Drain-source ON resistance
25
10 10
RDS (ON) (mΩ)
VGS = −4 V
100
−10
1 1
4 2006-11-15
TPC8114
15 −5
−10
RDS (ON) (mΩ)
10 −1
ID = −18 A, −9 A, −4.5 A VGS = 0 V
−1
VGS = −4 V
5
Common source
ID = −18 A, −9 A, −4.5 A Ta = 25°C
−10 V Pulse test
0 −0.1
−80 −40 0 40 80 120 160 0 0.2 0.4 0.6 0.8 1.0 1.2
−1.6 ID = −1 mA
Pulse test
(pF)
Ciss
10000
C
−1.2
Capacitance
Coss
1000 −0.8
Common source Crss
VGS = 0 V
f = 1 MHz −0.4
Ta = 25°C
100
−0.1 −1 −10 −100
0
−80 −40 0 40 80 120 160
Drain-source voltage VDS (V)
Ambient temperature Ta (°C)
(V)
VGS (V)
VDS
(Note 2b)
−20 −20
t = 10 s
Drain power dissipation
1.2
Drain-source voltage
Gate-source voltage
(2)
−12
−12
0.8
−10 −6 −10
−6 VDD = −24 V
0.4
VGS
0 0 0
0 40 80 120 160 200 0 40 80 120 160 200 240
5 2006-11-15
TPC8114
rth − tw
1000
(1) Device mounted on a glass-epoxy board (a)
(Note 2a)
(2)
(2) Device mounted on a glass-epoxy board (b)
10
Single pulse
0.1
0.001 0.01 0.1 1 10 100 1000
1 ms*
ID max (pulse) *
10 ms*
−10
(A)
ID
Drain current
−1
−0.1
* Single pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature. VDSS max
−0.01
−0.01 −0.1 −1 −10 −100
6 2006-11-15
TPC8114
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
7 2006-11-15