EE311A- Microelectronics - II

Dr. Amit Verma

Department of Electrical Engineering, IIT Kanpur
Email: amitkver@iitk.ac.in
Office: WL132, Phone: 6432
Lecture 22: p-n junction (contd.)

• Reading: Chap.4 (A. Dutta), Chap.5 (Streetman)

Amit Verma (amitkver@iitk.ac.in), IIT Kanpur 2

p-n junction (With bias): I-V

Amit Verma (amitkver@iitk.ac.in), IIT Kanpur 3

Diffusion Length

Long vs Short Diode

Amit Verma (amitkver@iitk.ac.in), IIT Kanpur 4

Minority Carrier Concentration at Depletion Edges

Quasi-Neutral Regions

-xp xn

Amit Verma (amitkver@iitk.ac.in), IIT Kanpur 5

Current by Minority and Majority Carriers

Amit Verma (amitkver@iitk.ac.in), IIT Kanpur 6

p-n junction: Diffusion Capacitance

For p+n junc. pno >> npo

 Diode Switching
Amit Verma (amitkver@iitk.ac.in), IIT Kanpur 7
p-n junction: Secondary Effects
• Secondary Effects
Quasi-Neutral Regions
- Significant Recombination in depletion region
- Breakdown (Zener vs Avalanche)
- Series resistance of quasi-neutral regions
- High-injection
-xp xn
- Temperature change

Amit Verma (amitkver@iitk.ac.in), IIT Kanpur 8