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In this work we derive closed expressions for the head of the frequency-dependent microscopic polarizabil-
ity matrix in the projector-augmented wave 共PAW兲 methodology. Contrary to previous applications, the lon-
gitudinal expression is utilized, resulting in dielectric properties that are largely independent of the applied
potentials. The improved accuracy of the present approach is demonstrated by comparing the longitudinal and
transversal expressions of the polarizability matrix for a number of cubic semiconductors and one insulator,
i.e., Si, SiC, AlP, GaAs, and diamond 共C兲, respectively. The methodology is readily extendable to more
complicated nonlocal Hamiltonians or to the calculation of the macroscopic dielectric matrix including local
field effects in the random phase or density functional approximation, which is demonstrated for the previously
mentioned model systems. Furthermore, density functional perturbation theory is extended to the PAW method,
and the respective results are compared to those obtained by summation over the conduction band states.
045112-2
LINEAR OPTICAL PROPERTIES IN THE PROJECTOR-… PHYSICAL REVIEW B 73, 045112 共2006兲
具n⬘k+q兩ei共q+G兲r兩nk典 ⬅ 冕⍀
*
ei共q+G兲rn⬘k+q共r兲nk共r兲d3r
implementation is rather involved for most electronic struc-
ture methods.
Particularly in full-potential codes,19 it is therefore com-
= 具un⬘k+q兩eiGr兩unk典 mon to determine the imaginary part of the dielectric func-
冕
tion using the simpler transversal expression
*
⬅ eiGrun⬘k+q共r兲unk共r兲d3r. 共10兲 4 2e 2ប 4
⍀ 共2兲
␣ 共兲 =
⍀2m2e
lim 兺 2wk␦共⑀ck+q − ⑀vk − 兲
q→0 c,v,k
The evaluation of the macroscopic dielectric matrix ⬁共q , 兲
requires an inversion of the full microscopic dielectric matrix ⫻ 具uck兩i␣ − k␣兩uvk典具uck兩i − k兩uvk典* . 共17兲
and taking the limit q → 0:
This expression is readily obtained from Eq. 共13兲 using
1 second-order perturbation theory in k and the relationship1,12
= lim 0,0
−1
共q, 兲. 共11兲
⬁共q̂, 兲 q→0
H共k兲 ប2
= i关H共k兲,r兴 = − i 共 + ik兲, 共18兲
Here the local field effects are included in the Hartree ap- k me
proximation 共or RPA兲. The dielectric function depends on the
direction q̂ = q / 兩q兩, which is used to approach the ⌫ point where H共k兲 is the effective one-electron Hamiltonian for the
共see below兲. If the off-diagonal elements of the dielectric cell periodic wave functions at the k-point k:
matrix 共local field effects兲 are neglected, the macroscopic
dielectric function can be approximated by the head of the ប2
H共k兲 = − 共 + ik兲2 + V. 共19兲
microscopic dielectric matrix: 2me
⬁共q̂, 兲 ⬇ lim 0,0共q, 兲. 共12兲 It is, however, important to realize that Eq. 共18兲 holds for
q→0
a purely local one-electron potential V共r兲 only. For nonlocal
In this simplification the imaginary part of the macroscopic pseudopotentials the potential operator is—as the name al-
dielectric function ⬁共2兲共q̂ , 兲 is given by ready suggests—nonlocal, and concomitantly the commuta-
tor of the Hamiltonian and the position operator differs from
4 2e 2 1
⬁共2兲共q̂, 兲 = lim 2 兺 2wk␦共⑀ck+q − ⑀vk − 兲 the nabla operator.20 Therefore the longitudinal or appropri-
⍀ q→0 兩q兩 c,v,k ate corrections to the transversal expression have to be used,
when pseudopotentials are applied.1,12,21 As we will see be-
⫻ 兩具uck+q兩uvk典兩2 , 共13兲 low the same holds at least in principle for the PAW method.
where the indices c and v are restricted to the conduction and If Eq. 共18兲 is directly applied to the PAW method neglecting
the valence band states, respectively. The dielectric function these nonlocal terms, a plane wave part and a one-center
depends on the direction q̂ via the equation correction are obtained:6
⬁共q̂, 兲 = lim ⬁共q, 兲 = 兺 q̂␣␣共兲q̂ . 共14兲 具uck兩i − k兩uvk典 = 具ũck兩i − k兩ũvk典 + 兺 具ũck兩p̃ik典具p̃ jk兩ũvk典
q→0 ␣, ij
Here q̂␣ is one Cartesian component of the unit vector q̂, and ⫻ i关i共r兲 j共r兲 −
˜ i共r兲
˜ j共r兲兴. 共20兲
the 3 ⫻ 3 Cartesian tensor ␣ is defined as
In the following, a closed expression for the head of the
4 2e 2 1
共2兲
␣ 共兲 = lim 2 兺 2wk␦共⑀ck − ⑀vk − 兲 dielectric matrix in the alternative longitudinal form is de-
⍀ q→0 q c,v,k rived within the PAW framework taking the nonlocality of
the Hamilton operator fully into account.
⫻ 具uck+e␣q兩uvk典具uck+eq兩uvk典* . 共15兲
Before continuing with the derivation of the longitudinal
The vectors e␣ are unit vectors for the three Cartesian direc- form of the dielectric matrix, we want to point out the im-
共2兲 portant difference between the PAW and the full-potential
tions. In the calculation of ␣ , it is possible to restrict k to
the irreducible wedge of the Brillouin zone of the crystal linearized augmented plane wave 共FLAPW兲 method which
symmetry group, if the final matrix is symmetrized applying necessitates the application of the longitudinal expression in
the symmetry group of the crystal. The real part of the di- the former. Compared to the latter, the one-center terms in
共1兲 the PAW method are truncated at rather low angular mo-
electric tensor ␣ is finally obtained by the usual Kramers-
menta. As a consequence, the transversal expression be-
Kronig transformation
comes inaccurate, in particular for standard PAW potentials,
共1兲
␣ 共兲 = 1 +
2
P 冕0
⬁ 共2兲
␣ 共 ⬘兲 ⬘
⬘2 − 2
d⬘ , 共16兲
which usually truncate the one-center expansion at l = 1 for
2p and 3p elements.13 In principle, this problem can be rem-
edied by including higher angular components in the one-
where P denotes the principal value. center terms.6 However, the rigorous treatment using the ex-
The difficulty in this approach is the required evaluation act longitudinal form has the advantage of a more rapid
of the first-order change of the wave function ck+q with convergence with the one-center basis set. Furthermore, the
respect to q. Although not particularly time consuming, the extension of the longitudinal expression to nonlocal ex-
045112-3
GAJDOŠ et al. PHYSICAL REVIEW B 73, 045112 共2006兲
change correlation functionals, e.g., functionals that include To determine limq→0具n⬘k+q兩eiqr兩nk典, the exponential is
the exact Hartree-Fock exchange, is readily achievable.21–23 expanded to first order around q = 0 in Eq. 共22兲,
eiq共r−Ri兲 = 1 + iq共r − Ri兲 + o共q2兲, 共24兲
C. Charge density kernel for Bloch wave functions
in the PAW method resulting in
*
Bn⬘k+q,nk共r兲 ⬅ eiqrn⬘k+q共r兲nk共r兲, 共21兲
冉
= 具ũn⬘k+q兩 1 + 兺 兩p̃ik+q典Qij具p̃ jk兩 兩ũnk典
ij
冊
which needs to be Fourier transformed in order to calculate
the polarizability 关Eq. 共10兲兴. To evaluate the body 共G + q + iq 兺 具ũn⬘k+q兩p̃ik+q典ជ ij具p̃ jk兩ũnk典,
⫽ 0兲 of the dielectric matrix we use the mixed space ap- ij
proach suggested in Refs. 24 and 25. Using the relation be- 共25兲
tween the pseudo-wave-function ˜ and the AE wave function where Qij and ជ ij are the norm and the dipole moments of the
关Eq. 共1兲兴 together with the usual completeness relation13 one-center charge densities:
and introduction of the cell periodic wave functions and pro-
jectors 关 Eqs. 共4兲 and 共6兲兴 yield
Bn⬘k+q,nk共r兲 =
*
ũn⬘k+q共r兲ũnk共r兲 + 兺 具ũn⬘k+q兩p̃ik+q典具p̃ jk兩ũnk典
Qij = 冕⍀PAW
关i共r兲 j共r兲 −
˜ i共r兲
˜ j共r兲兴d3r,
冕
ij
⫻ eiq共r−Ri兲关i共r兲 j共r兲 −
˜ i共r兲
˜ j共r兲兴. 共22兲 ជ ij = 共r − Ri兲关i共r兲 j共r兲 −
˜ i共r兲
˜ j共r兲兴d3r. 共26兲
⍀PAW
We represent the augmentation charges on the plane wave
grid only and neglect one-center terms. The quantity To emphasize that ជ ij is a vector quantity with three Carte-
ũn*⬘k+q共r兲ũnk共r兲 is evaluated in real space and proper augmen- sian components, we explicitly use the vector notation here.
tation charges are also added in real space to account for the It is important to realize that ជ ij is well defined, because the
fact that the wave functions are not normalized in the PAW centers of the PAW spheres Ri are subtracted.
method: In the final step, the cell periodic part of the wave func-
tion ũnk+q is replaced by the Taylor expansion around ũnk,
*
Bn⬘k+q,nk共r兲 ⬇ ũn⬘k+q共r兲ũnk共r兲 + 兺
ij,LM
具ũn⬘k+q兩p̃ik+q典具p̃ jk兩ũnk典 where the quadratic terms are neglected:
ũnk+q = ũnk + qkũnk + o共q2兲. 共27兲
iq共r−Ri兲
⫻e ij 共r兲.
Q̂LM 共23兲 Furthermore, the changes of the projectors with respect to k
For details we refer to the implementation of the exact ex- are required to linear order 关cf. Eq. 共5兲兴:
change operator discussed in Secs. II B and II D 1 of Ref. 22.
兩p̃ik+q典 = 关1 − iq共r − Ri兲兴兩p̃ik典 + o共q2兲. 共28兲
The final charge density Bn⬘k+q,nk共r兲 is fast Fourier trans-
formed to reciprocal space and then added to the polarizabil- After some straightforward manipulation the following rela-
ity matrix 关 Eqs. 共9兲 and 共10兲兴. After the Fourier transforma- tionship is obtained:
冉 冊
tion, additionally, the same cutoff is imposed on the resultant
charge density as on the wave functions. The size of the basis lim 具n⬘k+q兩eiqr兩nk典 = 具ũn⬘k兩 1 + 兺 兩p̃ik典Qij具p̃ jk兩 兩ũnk典
q→0 ij
set for the polarizability matrix is therefore identical to the
basis set of the wave functions at the point q. ជ 兩ũ 典,
+ 兩q兩具q̂ 共29兲
n⬘k nk
As already emphasized, we neglect the one-center 共on-
site兲 PAW terms in Eq. 共22兲, i.e., only the plane wave con- ជ 典 is defined
where q̂ = q / 兩q兩 and the “polarization vector” 兩 nk
tributions are taken into account. This approximation is ex- as
冉 冊 冉兺
pected to be accurate, since the difference between the
pseudo- and AE wave functions is only in the short- ជ 典 = 1 + 兺 兩p̃ 典Q 具p̃ 兩 兩 ũ 典 + i
兩 兩p̃ik典Qij具p̃ jk兩共r
nk ik ij jk k nk
wavelength range and the respective local field contributions i ij
are small, because they are weighted by 1 / 兩G 储 G⬘兩 关Eq. 共8兲兴.
冊
− Ri兲 兩ũnk典 − i 兺 兩p̃ik典ជ ij具p̃ jk兩ũnk典.
ij
共30兲
D. Long-wavelength limit in the PAW method Because of the orthogonality of the one-electron states, the
The head and the wings of the polarizability 共G + q → 0兲 first term in Eq. 共29兲 is zero, when evaluated between con-
are more difficult to evaluate. They are calculated by expand- duction and valence bands. Thus the final expression consists
ing the wave functions linearly around each k point and of the q-dependent part only. The quantity 兩ជ 典 关Eq. 共30兲兴
nk
evaluating the derivative of the pseudo-wave-functions with contains three components, corresponding to the three com-
respect to q as suggested in Refs. 1 and 12. ponents of the nabla operator 共first line兲, of the vectors
045112-4
LINEAR OPTICAL PROPERTIES IN THE PROJECTOR-… PHYSICAL REVIEW B 73, 045112 共2006兲
共r − Ri兲 共second line兲, and the dipole term ជ ij. The first term is can be determined by calculating the first-order response of
also found in the pseudopotential approximation and is sim- the wave functions 兩nk典 to an externally applied field which
ply related to the change of the cell periodic part of the wave amounts to solving the following second linear equation15 for
function with respect to k. The second one describes the 兩nk典
change of the projector functions and the resultant change of
the one-center charge with respect to k, whereas the last term ជ 典,
关H共k兲 − ⑀nkS共k兲兴兩nk典 = − ⌬HSCF共k兲兩ũnk典 − 兩q̂ nk
is new and compensates for the fact that the PAW wave
functions are not correctly normalized, i.e., it accounts for 共33兲
the difference between the dipole moment of the AE and where ⌬HSCF共k兲 describes the microscopic cell periodic
pseudo-wave-function in the PAW spheres. Formally related change of the Hamiltonian resulting from the change of the
equations have been derived for ultrasoft pseudopotentials wave functions 共self-consistent field effects兲 to first order. In
using Wannier functions within the Berry phase approach.26 this manner, local field effects are included directly in the
For conventional norm-conserving pseudopotentials 兩 ជ 典 re- evaluation of the dielectric response. The previous equation
nk
duces to the change of the wave function with respect to k has to be solved for three directions q̂ corresponding to the
共kũnk兲. principal axes of the macroscopic dielectric matrix. The ap-
propriate component of the macroscopic dielectric matrix is
E. Derivative of the wave function with respect to k given by the inner-product between the first-order change of
the wave function nk and the polarization vector  ជ :15
The final quantity that needs to be determined in order to nk
ជ 典 is the first-order change of the wave functions
calculate 兩 nk
8e2
with respect to k. For this purpose we use second-order per-
turbation theory:
⬁共q̂兲 = 1 − 兺 2wk共具q̂ជ vk兩vk典兲.
⍀ v,k
共34兲
兩kũnk典 = 兺
冓 冏
兩ũn⬘k典 ũn⬘k
关H共k兲 − ⑀nkS共k兲兴
k
冏 冔
ũnk
.
The last two equations can be derived by rewriting the head
of the irreducible polarizability matrix 关Eq. 共9兲兴 using Eq.
⑀nk − ⑀n⬘k 共29兲 and neglecting local field effects 关⌬HSCF共k兲 = 0兴:
n⬘⫽n
045112-5
GAJDOŠ et al. PHYSICAL REVIEW B 73, 045112 共2006兲
TABLE I. Core radii rc and energy cutoffs E for the PAW po- TABLE II. Ion clamped static macroscopic dielectric constants
tentials used in the present work. Nonlocal projectors were gener- ⬁ calculated using density functional perturbation theory and the
ated for the states listed in the column “Valence.” As local PAW PAW method for various k-point sets: ⌫ indicates a grid centered at
potential a pseudopotential was generated for the states indicated in ⌫, whereas Monkhorst-Pack 共MP兲 grids do not include the ⌫ point.
the column “Local.” If the core radii for different quantum numbers Values for mic neglect local field effects, whereas RPA includes
are different, they are specified for each channel using a subscript. local field effects on the Hartree level. Lines starting with Nc report
the dielectric constants obtained by a summation over Nc conduc-
Valence Local rc 共a.u.兲 E 共eV兲 tion band states for an 8 ⫻ 8 ⫻ 8 MP grid. Nk gives the number of k
points in the irreducible wedge of the Brillouin zone 共IBZ兲 after
C 2s2p 3d 1.2s , 1.5p 400 considering the symmetry of the crystal.
Al 3s3p 3d 1.9 240
Si 3s3p 3d 1.9 250 GaAs Nk 共IBZ兲 mic RPA
P 3s3p 3d 1.9 270
共16⫻ 16⫻ 16兲 ⌫ 145 18.16 16.55
Ga 4s4p4d 4f 2.6 140
共24⫻ 24⫻ 24兲 ⌫ 413 15.64 14.04
Gad 4s4p3d4d 4f 2.3 280
共32⫻ 32⫻ 32兲 ⌫ 897 15.14 13.56
As 4s4p4d 4f 2.1 210
共48⫻ 48⫻ 48兲 ⌫ 2769 14.94 13.35
共8 ⫻ 8 ⫻ 8兲 MP 60 14.76 13.30
共12⫻ 12⫻ 12兲 MP 182 14.78 13.31
xc
0
= 0共1 − f xc0兲−1 . 共36兲
Nc = 10 60 14.72 13.18
The quantity f xc is the derivative of the exchange correlation Nc = 20 60 14.74 13.23
potential with respect to the charge. For details we refer to Nc = 40 60 14.74 13.27
Ref. 12.
Nc = 60 60 14.74 13.28
B. PAW potentials
The calculations were performed using PAW potentials in but even if local field effects are included in the Hartree
the standard local density approximation 共LDA兲. The param- approximation, 60 conduction band states are sufficient to
eters 共core radii兲 of the potentials and the energy cutoffs, as obtain identical values as using linear response theory 共see
well as the states treated as valence states, are summarized in Table II兲. The number of unoccupied bands was therefore set
Table I. Two projectors are used for any of the states listed in to 60 for all considered systems.
the column “Valence.” For Ga two different PAW potentials The dynamic dielectric function was obtained by neglect-
were applied, one which treats the Ga 3d states as core ing local field effects and summing over 16 conduction band
states, and a second one 共Gad兲 describing the 3d states as states. In this case 40⫻ 40⫻ 40 k points were used and the
valence states. For this potential one d projector was gener- tetrahedron method was applied for the k sampling of the
ated for the 3d and one for the 4d states. It is expected that Brillouin zone.
this potential yields more precise results, in the sense that the
DFT limit is obtained. IV. RESULTS
C. Brillouin zone sampling As an example of the present approach the static macro-
scopic dielectric constants in various approximations are pre-
With the exception of RPA
cond
, all static dielectric constants sented for the four cubic group-IV and group-III-V semicon-
were determined using a 12⫻ 12⫻ 12 Monkhorst-Pack ductors 共Si, SiC, AlP, and GaAs兲 and for cubic diamond 共C兲.
grid.28 This grid does not include the ⌫ point. A Monkhorst- These materials crystallize in the zinc-blende and diamond
Pack grid with 8 ⫻ 8 ⫻ 8 k points yields dielectric constants structures with the lattice constants a = 5.431, 4.350, 5.450,
within 0.02 for Si and GaAs 共compare Table II兲, and identi- 5.650, and 3.567 Å, respectively. All calculations were per-
cal values for systems with a larger gap. Except for GaAs, formed at these experimental values for the lattice param-
similar convergence can be obtained using 24⫻ 24⫻ 24 k eters at room temperature.
points centered at the ⌫ point. For GaAs, however,
⌫-centered meshes converge notoriously slowly to the values
A. Static dielectric function
obtained using Monkhorst-Pack grids as shown in Table II.
This is the main reason why we have omitted such grids. The Table III presents the ion clamped static macroscopic di-
value for RPA
cond
was determined utilizing a slightly less accu- electric constants ⬁ calculated within the standard LDA
rate 8 ⫻ 8 ⫻ 8 Monkhorst-Pack grid, since calculations by the 共Ref. 29兲 and the PAW methodology. We will first concen-
inversion of the full microscopic dielectric matrix are time trate on the “exact” results using the longitudinal expression.
consuming. Overall our tests indicated that even this value is Obviously the results obtained by density functional pertur-
converged to within 0.02, whereas convergence of other re- bation theory are identical to those calculated by a summa-
ported values is expected to be slightly better. tion over the conduction band states. This applies to both
Convergence with respect to the conduction band states is mic 共neglecting local fields兲 as well as RPA and DFT 共in-
fast for the head of the microscopic dielectric function mic, cluding local fields in the Hartree approximation and on the
045112-6
LINEAR OPTICAL PROPERTIES IN THE PROJECTOR-… PHYSICAL REVIEW B 73, 045112 共2006兲
TABLE III. The ion clamped static macroscopic dielectric constants ⬁ calculated using the PAW method
and various approximations. mic reports values neglecting local field effects, RPA includes local field effects
in the Hartree approximation, and DFT includes local field effects on the DFT level. cond are values obtained
by summation over conduction band states, whereas LR are values obtained using linear response theory
共density functional perturbation theory兲.
Longitudinal
LR
mic 5.98 14.08 7.29 9.12 14.77 15.18
cond
mic 5.98 14.04 7.29 9.10 14.75 15.16
RPA
LR
5.54 12.66 6.66 7.88 13.31 13.77
RPA
cond
5.55 12.68 6.66 7.88 13.28 13.73
DFT
LR
5.80 13.29 6.97 8.33 13.98 14.42
DFT
cond
5.82 13.31 6.97 8.33 13.98 14.37
Transversal
cond
mic 5.68 16.50 8.00 10.63 14.72 15.33
cond
mic incl. d projectors 5.99 14.09 7.28 9.11
cond
mic APW+ LO 13.99 15.36
Experiment 共Ref. 33兲 5.70 11.90 6.52 7.54 11.10
DFT level, respectively兲. In particular, the agreement of the constant and finite-basis-set errors. For AlP and SiC, previ-
latter makes us confident that neglecting local field effects ously reported PAW values 共mic = 8.9 and mic = 7.1, respec-
for the PAW one-center terms is a perfectly valid approxima- tively兲 are in agreement with the present work, whereas the
tion: local field effects, i.e., changes of the potentials, inside value for GaAs 共mic = 14.4 in Ref. 6, when treating the 3d
the PAW spheres do not contribute to the macroscopic di- states as valence兲 is significantly smaller than the present one
electric function. 共mic = 15.3兲. We found that the difference is related to the
Second, we want to comment on the transversal expres- smaller LDA lattice constant and a different k-point grid used
sion for the head of the microscopic dielectric matrix mic cond
. in the previous calculation. At the presently applied experi-
For Si, SiC, and AlP the transversal dielectric constants are mental lattice constant the gap is smaller resulting in an in-
significantly larger than the longitudinal ones, whereas the crease of the dielectric constant. Finally, for diamond, Brod-
results are closer for C and GaAs. A significant improvement ersen et al.31 obtained values of mic = 5.98 and RPA = 5.58, in
of the agreement between transversal and longitudinal results excellent agreement with the present work.
is achieved by including d projectors and d one-center terms When comparing our PAW results to all-electron FLAPW
in the PAW spheres for Si, C, Al, and P 共see Ref. 6; for GaAs calculations published in Ref. 6, we find that the FLAPW
the d projectors are already included, cf. Table III兲. As ap- mic
cond
values for GaAs and Si are significantly smaller. To
parent from Table III, the longitudinal and transversal mic cond elucidate this discrepancy, we have performed calculations
now agree with typical deviations being less than 1%. We using the augmented plane wave plus local orbitals 共APW
also note that the longitudinal results remain identical using + LO兲 formalism as implemented in the WIEN2K program
the improved PAW data set with d nonlocality. This clearly package.32 Compared to previous versions, the current re-
shows that the transversal expression is not sufficiently ac- lease allows for a more accurate treatment of shallow semi-
curate, if potentials are used in which the d potential is cho- core states, which is important for GaAs. As already men-
sen as local potential, and on-site PAW terms are included tioned, the convergence of the static dielectric constant with
only up to the p states. This is, however, the approximation respect to ⌫-centered k meshes—as usually applied in
widely adopted in most, if not all, PAW data sets for 2p and WIEN2K—turned out to be exceptionally slow for GaAs. The
3p elements.13,17 static dielectric constant is only sufficiently converged using
In the following, our results are compared to previous a 48⫻ 48⫻ 48 mesh, and the corresponding values are indi-
calculations. For Si, extensive studies were performed by cated by “APW+ LO” in Table III. While the previous
Baroni and Resta.12 For the longitudinal expression of the FLAPW mic for GaAs 共Si兲 was 12.7 共13.6兲,6 the present
dielectric matrix they reported values of mic = 13.41, RPA APW+ LO calculation yields mic = 15.4 共14.0兲, which per-
= 12.04, and DFT = 12.72. Even though our absolute values fectly matches the PAW result of mic = 15.3 共14.1兲 共provided
are larger by roughly 0.6, the magnitude of the local field that the Ga 3d states are properly treated兲. This excellent
effects are in agreement with their previous calculations. We agreement supports the high accuracy of the present PAW
also note that a calculation of Corso, Baroni, and Resta using results for both GaAs and Si. The discrepancies between the
density functional perturbation theory later reported a value previously reported FLAPW results6 and the current APW
of DFT = 12.9 at the experimental lattice constant,30 in better + LO findings for these materials can be understood in terms
accordance with the present value of DFT = 13.3. In passing, of three differences between these calculations: 共i兲 the lattice
we note that the values are rather sensitive to the lattice parameters used, 共ii兲 the treatment of the shallow semicore
045112-7
GAJDOŠ et al. PHYSICAL REVIEW B 73, 045112 共2006兲
TABLE IV. The energy positions of the main optical features E0,
E1, E2, E⬘0, and E⬘1. Since the peak positions are identical for the
longitudinal and transversal expressions, they are stated only once.
All listed values are given in units of eV.
Si
PAW 2.53 2.71 3.72 3.08 4.50
APW+ LO 2.54 2.70 3.71 3.08 4.51
GadAs
PAW 0.35 2.10 4.15 3.65 5.64
APW+ LO 0.31 2.11 4.15 3.66 5.65
045112-8
LINEAR OPTICAL PROPERTIES IN THE PROJECTOR-… PHYSICAL REVIEW B 73, 045112 共2006兲
truncating the one-center expansion at l = 1 is sufficient, benchmarking electronic structure methods and as a bench-
whereas the transversal equation yields satisfactory results mark for an improved description of the electronic correla-
only, if the partial waves up to l = 2 are included. tion. The experimental values for C, Si, SiC, and AlP, and
The dielectric constants were calculated in two manners. GaAs are 5.7, 11.9, 6.52, 7.54, and 11.1,33 respectively. We
On one hand, density functional perturbation theory was ap- therefore conclude that the present calculations clearly over-
plied; on the other hand, a summation over conduction band estimate the dielectric constants by 5–20 %, where the over-
states was used. Both methods gave essentially identical re- estimation is larger for small gap materials. Although this has
sults, and the convergence with respect to the number of been known for some time, the present calculations exhibit
conduction band states was also found to be rather fast. The an even larger discrepancy to experiment than hereto as-
ion clamped static dielectric constants including local field sumed. Clearly, methods beyond the local density approxi-
effects in the DFT approximation for C, Si, SiC, AlP, and mation are required for a quantitative description of screen-
GaAs were determined to be 5.80, 13.29, 6.97, 8.33, and ing in small gap materials.
14.42. If local field effects are neglected, the respective val- The present work opens this possibility, i.e., it allows one
ues are 5.98, 14.08, 7.29, 9.12, and 15.18. The latter values to perform GW calculations within the framework of the
should not be compared to experiment, but might become PAW method. Although some calculations have already been
useful for evaluating other electronic structure methods. The published,34 the ⌫ point has previously been avoided in the
reduction due to local field effects is between 3% and 9% in context of PAW GW calculations, since the required limit for
the investigated materials. The present values compare well small momentum transfers had not been considered. There-
with previous literature results, although they are generally fore dielectric properties in the long-wavelength limit were
slightly larger then those reported before. This applies, in not directly accessible using the PAW method.
particular, to Si and GaAs. To elucidate this discrepancy, full
potential APW+ LO calculations have been performed and ACKNOWLEDGMENTS
we found the present PAW values confirmed to within 1%.
Therefore, we believe that the present values are technically This work has been supported by the Austrian Fonds zur
fully converged and exact within the framework of the Förderung der wissenschaftlichen Forschung and by the EU
present approximations to density functional theory. Such Network of Excellence NANOQUANTA 共Contract No.
technically converged calculations are important, both for NMP4-CT-2004-500198兲.
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