Professional Documents
Culture Documents
SCAPS 3.0 An Introduction: Koen Decock & Marc Burgelman
SCAPS 3.0 An Introduction: Koen Decock & Marc Burgelman
0
An introduction
• Getting started
• General working principles
• Tips & Tricks
– Numerical limitations
– The numerical panel
– A neutral defect
– Curve Info: Get informed!
– Preserve your work for the future: saving and commenting.
– Speeding up: Batch – Recorder – Script
– Grading
– Zooming: Get a closer look!
– The blue button
2/29
Getting Started…
SCAPS 3.0
• Opto-electrical simulation
of 1-D structure of
semiconductor layers
• Special attention for
contacts and interfaces
Light
• Variable bias voltage,
temperature & illumination
• DC & AC calculations
• Designed for CdTe and
V
CIGS Solar Cells, but also
used in other material systems ☺
J(V)
3/29
1. Define Problem
2. Working Point
SCAPS 3.0
3. Select Calculations
4. Start Calculations
5. Analyze results
Getting Started
4/29
Getting Started: Define Problem
SCAPS 3.0
• Setting Layer,
Interface &
Contact
properties
• Setting
Numerical
preferences
• Saving &
Loading
5/29
SCAPS 3.0
6/29
Getting Started: Analyze results
SCAPS 3.0
• Display
results
• Export
results
• Compare
with
measured
data
• Navigate
to other
panels
7/29
General working principles:
Semiconductor equations
SCAPS 3.0
∂ ∂ψ q − + 1
ε = − −n + p − N A + N D + ρ defect (n, p ) Poisson Constitutive relations
∂x ∂x ε0 q
∂jn ∂n µn ∂EFn
− + G − U n ( n, p ) = j
n = − n
∂x
∂x ∂t q
Continuity relations
∂j p ∂p j = µ p p ∂EFp
− + G − U p ( n, p ) =
p
∂ x ∂t q ∂x
8/29
General working principles:
Discretization
SCAPS 3.0
250
– Finer mesh near the interfaces &
meshpoint #
200
contacts
150
interface 50
9/29
General working principles:
∂ ∂ψ q − +
(1) : ∂x ε ∂x = − ε −n + p − N A + N D + ρ defect (n, p )
0
∂jn ∂n
(2) : − + G − U n (n, p) =
∂x ∂t
∂j p ∂p
• Make first guess of solution
(3) : − + G − U p (n, p ) =
∂x ∂t • Improve guess with tangent lines
• Works well if first guess was
not too bad
10/29
General working principles:
… 11/29
General working principles:
AC-analysis
SCAPS 3.0
ɶ jωt
R(ω)=1/G(ω)
V = VDC + Ve
jωt
ψ = ψ DC +ψɶ e
ɶ jωt
EFn = EFn, DC + EFn e
jωt
jn = jn , DC + ɶjn e
C(ω)
12/29
SCAPS 3.0
13/29
Numerical limitations
Large number of points:
SCAPS 3.0
Slower calculation
Less chance of convergence failure
• Keep the variation
between different
calculation steps
limited.
• Keep it realistic:
SCAPS is developed and tested to
simulate realistic situations, hence
things can go wrong when simulating
unphysical situations
• Don’t overdo
Do you really want to know the current
at T=20K, V=300V?
V(V)
15/29
The numerical panel1
SCAPS 3.0 Avoid too big variations
between iterations
Terminations criteria
Newton-Raphson
ψ
EFn
EFp
Error handling
16/29
The numerical panel2
SCAPS 3.0
No recalculation Recalculation
17/29
A Neutral Defect
SCAPS 3.0
18/29
Curve Info
SCAPS 3.0
• Save settings:
– Cell structure (.def)
[some of the numerical settings are included here]
– Batch (.sbf & .bdf) All together (.scaps)
– Recorder (.srf)
– Action panel (.act)
• Save results:
Batch
SCAPS 3.0
file as parameter!
Up to 9 parameters
Keep SHIFT pressed to interrupt
a batch calculation
21/29
Speeding up:
Recorder1
SCAPS 3.0
Recorder2
SCAPS 3.0
Recorded items shown as function of:
• Batch parameters (cell characteristics – general properties – interface properties)
• Mesh (other properties)
• Only checked
items are
saved
• Only lowest
checked item
is shown
Script
SCAPS 3.0
25/29
Zooming and Scaling
SCAPS 3.0
EMERGENCY BUTTONS
27/29
Enjoy SCAPS
SCAPS 3.0
• SCAPS is freeware:
– Register when using: Marc.Burgelman@Elis.Ugent.be
Koen.Decock@Elis.Ugent.be
– Cite when publishing:
• M. Burgelman et al., Thin Solid Films, 361-362, 527-532 (2000)
• Other more specialized articles
• More Details:
– Collection of (Add-on) user manuals
– Contributions in literature
28/29
SCAPS 3.0
More Questions?
• Raise your hand and ask!
• Marc.Burgelman@Elis.Ugent.be
Koen.Decock@Elis.Ugent.be
Please explain your problem, what you did and what you
expected!
Please add .def- or .scaps- file with sufficient comments &
results.
29/29