Department of Electrical Engineering

Riphah College of Science and Technology

Faculty of Engineering and Applied Sciences
Riphah International University, Lahore

Program: BS Electrical Engineering Semester: VII

Subject: EE-405 Power Electronics Date: …………………

Name: …………………………………………. SAP: ………………….

Experiment No 07: Characteristics of IGBT

OBJECTIVE:
(i) To study the characteristics of IGBT

Lab Performance Evaluation

No. Title Marks Obtained

Marks
1 Ability to Conduct Experiment 05
2 Data Evaluation and Report 05
Total 10

Lab Report Evaluation

No. Title Marks Obtained

Marks
1 Organization/Structure 05
2 Data Presentation and Calculations 05
Total 10

Remarks (if any): ………………………………

Name and Signature of Faculty: …………………………………………….

 Experiment No. 07
Characteristics of IGBT
Objective
To study the characteristics of IGBT
Equipment and Components:

• IGBT
• Voltmeter
• Ammeter
• Resistor
• Variable DC source
Theory:
An IGBT combines the advantages of BJTs and MOSFET. They are inherently faster than BJTs but
not as fast as MOSFETs. However, they offer far superior drive and output characteristics as
compared to those of BJTs. IGBTs has high impedance, like MOSFETs, and low on-state
conduction losses, like BJT. However, there is no second breakdown problem as with BJTs. The
performance of IGBT is closer to that of MOSFET than BJT. IGBTs are suitable for high voltage,
high current, and frequencies up to 20 kHz. IGBTs are available to 1700 V, 2400 A.
IGBTS are voltage-controlled power transistors like MOSFETs. Like a MOSFET, when a gate is
made positive with respect to the emitter for turn-on, n carriers are drawn into the p-channel
near the gate region; this results in the forward bias of the base of the npn-transistor, which
thereby turns on. An IGBT is turned on by just applying positive voltage to open the channel for
n- carriers and turned off by removing the gate voltage to close the channel. It requires a very
simple driver circuit. It has lower switching and conducting losses while sharing many of the
appealing features of power MOSFETs, such ease of gate drive, peak current, capability, and
ruggedness. An IGBT is inherently faster than a BJT. However, switching speed is slower than
MOSFETs.
 Figure 1: IGBT schematics

Procedure:
For IGBT Transfer characteristics:
1. Make the connections as shown in the circuit diagram with meters
2. Initially keep V1 and V2 zero. Set V1 = VCE1 = say 10v. Slowly vary V2 (VGE) and note
down IC and VGE readings for every 0.5 volts and enter in the tabular column.
3. The minimum Gate voltage VGE which is required for conduction to start in the IGBT is
called Threshold voltage. VGE is less than VGE (Th).
4. If VGE is less than VGE (Th) only very small leakage current flows from collector to
Emitter.
5. If VGE is greater than VGE (Th) the collector current depends on magnitude of the Gate
voltage VGE varies from 5 to 6 volts.

For IGBT Collector Characteristics:

1. Initially set V2 to VGE1 = 5 volts. Slowly vary V1 and note down IC and VGE.
2. For a particular value of VGE1 there is a pinch off voltage (Vp) between collector and
Emitter.
3. If VGE is lower than VP the device works in the constant resistance region and IC is
directly proportional to VGE if VGE is more than Vp. Constant IC flows from the
device and this operating region is called constant current region.
4. Repeat the above for VGE1=5v and VGE2=5.4v and note down IC v/s VGE
5. Draw the graph of IC vs VGE for different values of VGE.
Simulation Tasks
Transfer Characteristics:
Implement the above circuit diagram in multisim and according to the procedure above not
down the values in the following table of VGE and IC for two different VCE. Draw the graph of Ic
vs VGE. Attach the graph and multisim circuit diagram below.

Table 1: Transfer Characteristics

Collector Characteristics:
Implement the above circuit diagram in multisim and according to the procedure above not
down the values in the following table of VCE and IC for two different VGE. Draw the graph of IC
vs VCE for different VGE. Attach the graph and multisim circuit diagram below.

Table 1: Collector Characteristics

Conclusion:
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