p- n diode rectifiers

p- n diode rectifiers

 qV 
exp  − 1
~  kT  1
IS
2
Ir = 0 in an ideal VF = 0 in an ideal
rectifier. rectifier
Voltage
VD = VSource
Current
1
2
Time Time
Lecture objective: p-n diode at reverse bias
 Simulated Electron - Hole profile in Si p-n junction
Junction
0
V bi
E
c
-0.8
E
F
V bi
Electron-hole concentration -1.6 Ev
in a Si p-n junction. p-type n-type
Acceptor density Na=5× ×1015 cm-3 -2 -1 0 1 2
Donor density Nd=1× ×1015 cm-3.
Distance (µm)
T=300K. 10 16
p = Na n = Nd
Dashed line show the boundaries 10 14
Hole Electron
of the depletion region concentration concentration
10 12

10 10
p -type n -type

10 8

10 6
n = n i2 / N a p = n i2 / N d
10 4
-2 -1 0 1 2

Distance (µm)
 Charge distribution in the depletion region.
Total charge density in the semiconductor: ρ = q××(Nd + p - Na - n);
NA ND
Concentration

p n
ρ = 0; ρ = 0;

pn ≈ 0; nn ≈ 0;
np ≈ 0; pn ≈ 0;

ρ ≈ -q NA; ρ ≈ +q ND;
Mobile Charge density distribution in the p-n junction

Depletion
Charge density

region
(C/cm3)

Free
electrons x

Holes

p-type n-type

pn ≈ 0; nn ≈ 0;
np ≈ 0; pn ≈ 0;
 Charge distribution in the depletion region.
Total charge density in the semiconductor: ρ = q××(Nd + p - Na - n);
Charge density
(C/cm3)

qND
x
ρ = 0; ρ = 0;
qNA

pn ≈ 0; nn ≈ 0;
np ≈ 0; pn ≈ 0;

ρ ≈ -q NA; ρ ≈ +q ND;
 Electric field profile in the p-n junction

In the following material, the electric field is

denoted as “F”
(to distinguish from “E” = electron/hole energy).

The electric field distribution is defined by Poisson’s equation:

dF ρ ρ
= = ;
dx ε ε 0 ε s
where ε s = ε ε 0 , ρ is the charge density
ε0 – the dielectric permittivity of vacuum;
ε0 = 8.85×10-12 F/m = 8.85×10-14 F/cm
ε − relative dielectric permittivity of the material
In Si, ε ≈ 11.7
 2
Charge, Field, 0
Potential Profiles in the
-2 n-type
p-type
p-n junction
-4

dF ρ -6
0
= ; -2 -1 1 2
dx ε s
X
 2
Charge, Field, 0
Potential Profiles in the
-2
-xp xn
p-type n-type
p-n junction
-4

dF ρ -6
0
= ; -2 -1 1 2
dx ε s
Using the depletion approximation, we obtain X
 qNa
− ε , for − xp < x < 0
dF s
=
dx  qNd
, for 0 < x < xn
 ε s
 2
Charge, Field, 0
Potential Profiles in the
-2
-xp xn
p-type n-type
p-n junction
-4

dF ρ -6
0
= ; -2 -1 1 2
dx ε s 0
Using the depletion approximation, we obtain -xp xn
 qNa -5

− ε , for − xp < x < 0

dF s
= -10

dx  qNd
, for 0 < x < xn
 ε s -15
-2 -1 0 1 2
0.2

  x
0

−Fm  1+  , for − x p < x < 0 -0.2

  xp 
F= -0.4

  x -0.6

−Fm  1−  , for 0 < x < xn -0.8

  xn  -2 -1 0 1 2

Distance (µm)
 Maximum Field in the p-n junction
0

-xp xn dF ρ
-5
From = :
dx ε s
-10

-15
-2 -1 0 1 2 qN A
On the p-side of the junction, Fm = xp
εε 0
qN D
On the n-side of the junction, Fm = xn
εε 0
At the junction interface: Fm(p-side) = Fm (n-side)

qN D qN A xp ND
Fm = xn = xp =
εε 0 εε 0 xn N A
 Voltage drop across the p-n junction

qN D qN A
Fm = xn = xp
εε 0 εε 0
The voltage drop across the p-n junction, V p − n = − ∫ F ( x ) dx

= -{AREA UNDER the F(x) curve}

W
0
In equilibrium:
-5
-xp xn
1
Vbi = Fm W
-10 2
-15
-2 -1 0 1 2
At reverse bias:
1
Vbi −Vr = Fm W
2
 Depletion region width in the p-n junction
The total width of the depletion (space-charge) region.

From x p = xn ( N D / N A )

W = xn + xp = xn (1 + ND/NA);
The voltage (the area of the triangle): Vbi –Vr = Fm× W/2;
W
qN D qN A
Fm Fm = xn = xp
εε 0 εε 0

 qN D  qN D 2 1 q 2 ND N A
Vbi −Vr =  xn W / 2 = W = W
 εε 0  2εε 0 1 + N D / N A 2εε 0 N A + ND
 Depletion region of the p-n junction summary
Depletion region (a.k.a space-charge region) width
q 2  ND N A 
Vbi − Vr = W N ';  where N ' = 
2εε 0  N A + N D

Depletion region width sharing between n- and p-sides:

W = xn + xp x p = xn ( N D / N A )

For strongly asymmetrical p-n junction:

1 q
N A >> N D , Vbi − Vr = ND W 2 W ≈ xn
2 ε ε0

1 q
N D >> N A , Vbi − Vr = NAW 2 W ≈ xp
2 ε ε0
The space-charge region is extended mainly to the low-doped side
of the p-n junction
 Depletion region width as a function of voltage
From q
Vbi − Vr = W 2N '
2εε 0

The depletion region width W:

2ε ε 0 (Vbi − Vr )
W= where
qN '

ND N A
N '=
N A + ND

For N D >> N A , N ' = N A

For N A >> N D , N ' = N D

Peak electric field in the p-n junction summary

Maximum electric field

1
Vbi − Vr = Fm W
2

2q N ' (Vbi − Vr )
Fm =
ε ε0

ε ε 0 Fm2 2
ε ε 0 FBD
Vbi −Vr = Vmax =
2q N ' 2q N '
P-n Junction Breakdown
 Avalanche Breakdown mechanism

Mechanisms for breakdown

Two quantum processes give rise to breakdown:
(1) Impact ionization plus avalanche multiplication.
(2) Quantum tunneling (Zener effect).
Relative importance depends on doping level in the p-
and n- regions:
 Avalanche Breakdown mechanism

• Electric field accelerates electrons (and holes);

• The kinetic energy of electron in the electric field
increases;
• Electron with high enough excessive energy can ionize
the atom at collision.
• As a result, collision produces an electron-hole pair.
 Avalanche Breakdown mechanism
Minimum additional electron energy required for
ionization can be estimated using:
m v2
0
≈ EG
2
Additional electron energy comes from the electric field:
m v2
0
≈ q F LFP
2
where F is the electric field and LFP is the “mean free path” – the
average distance that the electron passes between collisions.
From this, the ionization condition: q FBD LFP ≈ EG

FBD is the critical or “breakdown” field.

The ionization only occurs if electric field exceeds the critical value
 Breakdown in p-n junction

0
-xp xn
-5

-10

-15
-2
Fm
-1 0 1 2

In reverse-biased p-n junction, the electric field is concentrated

within a narrow depletion region.
The maximum electric field occurs exactly at the p-n interface.
As the field Fm exceeds the critical (breakdown) value:

e1
e1 Atom
h2 e2
Avalanche multiplication during the breakdown

Ionization coefficient αe ≈ αh Ionization coefficient αe >> αh

 Multiplication and Ionization Coefficients
Consider uniform electric field in the avalanche region
(for simplicity)
The avalanche region width is W
Assume αe = αh ≈ const (x);

Multiplication factor:

Number of e − h pairs at theoutput

M=
Number of e − h pairs at theinput

The condition for avalanching: (every carrier has one ionizing collision)
Avalanche breakdown interpretation using band diagrams

(1) Electrons from the p-side and holes from the n-

side get accelerated in the depletion regions by
strong electric filed

np

EV
p n
EC

pn
Avalanche breakdown interpretation using band diagrams

(2) At collision, electron produces new electron – hole

(e-h) pairs

EV
p n
EC
Avalanche breakdown interpretation using band diagrams

(3) These secondary e-h pairs in also acquire high energy and
may in turn produce more e-h pairs.

EV
p n
EC
Avalanche breakdown interpretation using band diagrams

(4) New electron hole pairs will add up to the reverse current

EV
p n
EC
Avalanche breakdown interpretation using band diagrams

(5) New electron-hole pairs will also create more electron

hole pairs (avalanche multiplication)

EV
p n
EC
 Breakdown voltage of the p-n junction

For a p+ - n junction
(NA >> ND):

2
ε s Fbd
Vabd =
2qN d
 Si p-n junction. Example 1:
Maximum Field vs. Reverse Voltage
1.0E+06

9.0E+05 -3
N = 1E15 cm
Fm
8.0E+05

7.0E+05

Peak Electric Field, V/m 6.0E+05

5.0E+05

4.0E+05
FBD
3.0E+05

2.0E+05

1.0E+05

0.0E+00
0 500 1000 1500 2000
Reverse Voltage, V

2q N ' (Vbi − Vr )
Fm =
ε ε0
 Si p-n junction. Example 2
Maximum Field vs. Doping
1.60E+06

1.40E+06
V=1000 V
1.20E+06

1.00E+06
Fm, V/cm

8.00E+05

6.00E+05

4.00E+05 FBD

2.00E+05

0.00E+00
0.00E+ 1.00E+ 2.00E+ 3.00E+ 4.00E+ 5.00E+ 6.00E+ 7.00E+
00 15 15 15 15 15 15 15
Doping, cm-3

2q N ' (Vbi − Vr )
Fm =
ε ε0
 Si p-n junction. Example 3
Maximum Voltage vs. Doping
2.50E+03

2.00E+03

1.50E+03
Vmax, V

1.00E+03

5.00E+02

0.00E+00
0.00E 1.00E 2.00E 3.00E 4.00E 5.00E 6.00E 7.00E 8.00E
+00 +15 +15 +15 +15 +15 +15 +15 +15
Doping, cm-3

2
ε ε 0 FBD For Silicon,
Vmax = FBD ≈ 3 ×105 V/cm
2q N '
 Zener (tunneling) breakdown
If the junction is highly doped then the depletion region can be very thin:

2ε ε 0 (Vbi − Vr )
W=
qN '
At high reverse bias, the conduction and valence bands on the opposite sides
of the junction are very close to each other
Thin junction (heavily doped)

EV

EC
 Zener (tunneling breakdown)

At certain reverse bias, the electrons from the valence band of p-material
can tunnel into the conductance band of n-material.
The reverse current increases abruptly at a certain voltage:

EC

EV

Typical voltage for the Zener breakdown, VZ ≈ 4 EG/q

 Avalanche vs. Zener Breakdown comparison

Avalanche (100V – 5 kV)

Zener (5V – 10V)