Multiple Choice Questions and

Answers on Transistors
In addition to reading the questions and answers on my site, I would
suggest you to check the following, on amazon, as well:

Q1. A transistor has …………………

1. one pn junction
2. two pn junctions
3. three pn junctions
4. four pn junctions
Answer : 2

Q2. The number of depletion layers in a transistor is …………

1. four
2. three
3. one
4. two
Answer : 4

Q3. The base of a transistor is ………….. doped

1. heavily
2. moderately
3. lightly
4. none of the above
Answer : 3

Q4. The element that has the biggest size in a transistor is

………………..

1. collector
2. base
3. emitter
4. collector-base-junction
Answer : 1
Q5. In a pnp transistor, the current carriers are ………….

1. acceptor ions
2. donor ions
3. free electrons
4. holes
Answer : 4

Q6. The collector of a transistor is …………. doped

1. heavily
2. moderately
3. lightly
4. none of the above
Answer : 2

Q7. A transistor is a …………… operated device

1. current
2. voltage
3. both voltage and current
4. none of the above
Answer : 1

Q8. In a npn transistor, ……………. are the minority carriers

1. free electrons
2. holes
3. donor ions
4. acceptor ions
Answer : 2

Q9. The emitter of a transistor is ………………… doped

1. lightly
2. heavily
3. moderately
4. none of the above
Answer : 2

Q10. In a transistor, the base current is about ………….. of emitter

current

1. 25%
2. 20%
3. 35 %
4. 5%
Answer : 4

Q11. At the base-emitter junctions of a transistor, one finds

……………

1. a reverse bias
2. a wide depletion layer
3. low resistance
4. none of the above
Answer : 3

Q12. The input impedance of a transistor is ………….

1. high
2. low
3. very high
4. almost zero
Answer : 2

Q13. Most of the majority carriers from the emitter ………………..

1. recombine in the base

2. recombine in the emitter
3. pass through the base region to the collector
4. none of the above
Answer :3

Q14. The current IB is …………

1. electron current
2. hole current
3. donor ion current
4. acceptor ion current
Answer : 1

Q15. In a transistor ………………..

IC = IE + IB

IB = IC + IE
IE = IC – IB

IE  = IC + IB

Answer : 4

Q16. The value of α of a transistor is ……….

 more than 1
 less than 1
 1
 none of the above
Answer : 2

Q17. IC = αIE + ………….

1. IB
2. ICEO
3. ICBO
4. βIB
Answer : 3

Q18. The output impedance of a transistor is ……………..

1. high
2. zero
3. low
4. very low
Answer : 1

Q19. In a tansistor, IC = 100 mA and IE = 100.2 mA. The value of β
is …………

1. 100
2. 50
3. about 1
4. 200
Answer : 4

Q20. In a transistor if β = 100 and collector current is 10 mA, then 

IE is …………

1. 100 mA
2. 100.1 mA
3. 110 mA
4. none of the above
Answer : 2

Q21. The relation between β and  α is …………..

1. β = 1 / (1 – α )
2. β = (1 – α ) / α
3. β = α / (1 – α )
4. β = α / (1 + α )
Answer : 3

Q22. The value of β for a transistor is generally ………………..

1. 1
2. less than 1
3. between 20 and 500
4. above 500
Answer : 3

Q23. The most commonly used transistor arrangement is ……………

arrangement

1. common emitter
2. common base
3. common collector
4. none of the above
Answer : 1

Q24. The input impedance of a transistor connected in ……………..

arrangement is the highest

1. common emitter
2. common collector
3. common base
4. none of the above
Answer : 2

Q25. The output impedance of a transistor connected in …………….

arrangement is the highest

1. common emitter
2. common collector
3. common base
4. none of the above
Answer : 3

Q26. The phase difference between the input and output voltages in a
common base arrangement is …………….

1. 180o
2. 90o
3. 270o
4. 0o
Answer : 4

Q27. The power gain in a transistor connected in …………….

arrangement is the highest

1. common emitter
2. common base
3. common collector
4. none of the above
Answer : 1

Q28. The phase difference between the input and output voltages of a
transistor connected in common emitter arrangement is
………………

1. 0o
2. 180o
3. 90o
4. 270o
Answer : 2

Q29. The voltage gain in a transistor connected in ……………….

arrangement is the highest

1. common base
2. common collector
3. common emitter
4. none of the above
Answer : 3

Q30. As the temperature of a transistor goes up, the base-emitter

resistance ……………

1. decreases
2. increases
3. remains the same
4. none of the above
Answer : 1

Q31. The voltage gain of a transistor connected in common collector

arrangement is ………..

1. equal to 1
2. more than 10
3. more than 100
4. less than 1
Answer : 4

Q32. The phase difference between the input and output voltages of a

transistor connected in common collector arrangement is
………………

1. 180o
2. 0o
3. 90o
4. 270o
Answer : 2

Q33. IC = β IB + ………..

1. ICBO
2. IC
3. ICEO
4. αIE
Answer : 3

Q34. IC = [α / (1 – α )] IB + ………….

1. ICEO
2. ICBO
3. IC
4. (1 – α ) IB
Answer : 1

Q35. IC = [α / (1 – α )] IB + […….. / (1 – α )]

1. ICBO
2. ICEO
3. IC
4. IE
Answer : 1

Q36. BC 147 transistor indicates that it is made of …………..

1. germanium
2. silicon
3. carbon
4. none of the above
Answer : 2

Q37. ICEO = (………) ICBO

1. β
2. 1 + α
3. 1 + β
4. none of the above
Answer : 3

Q38. A transistor is connected in CB mode. If it is not connected in

CE mode with same bias voltages, the values of IE, IB and IC will
…………..

1. remain the same

2. increase
3. decrease
4. none of the above
Answer : 1

Q39. If the value of α is 0.9, then value of  β is ………..

1. 9
2. 0.9
3. 900
4. 90
Answer : 4

Q40. In a transistor, signal is transferred from a …………… circuit

1. high resistance to low resistance

2. low resistance to high resistance
3. high resistance to high resistance
4. low resistance to low resistance
Answer : 2

Q41. The arrow in the symbol of a transistor indicates the direction

of ………….

1. electron current in the emitter

2. electron current in the collector
3. hole current in the emitter
4. donor ion current
Answer : 3

Q42. The leakage current in CE arrangement is ……………. that in

CB arrangement

1. more than
2. less than
3. the same as
4. none of the above
Answer : 1

Q43. A heat sink is generally used with a transistor to …………

1. increase the forward current

2. decrease the forward current
3. compensate for excessive doping
4. prevent excessive temperature rise
Answer : 4

Q44. The most commonly used semiconductor in the manufacture of

a transistor is ………….

1. germanium
2. silicon
3. carbon
4. none of the above
Answer : 2

Q45. The collector-base junction in a transistor has ……………..

1. forward bias at all times

2. reverse bias at all times
3. low resistance
4. none of the above
Answer : 2
Q46. When transistors are used in digital circuits they usually
operate in the ………….

1. active region
2. breakdown region
3. saturation and cutoff regions
4. linear region
Answer : 3

Q47. Three different Q points are shown on a dc load line. The upper

Q point represents the ………….

1. minimum current gain

2. intermediate current gain
3. maximum current gain
4. cutoff point
Answer : 3

Q48. A transistor has a   of 250 and a base current, IB, of 20   A.
The collector current, IC, equals to …………….

1. 500 μA
2. 5 mA
3. 50 mA
4. 5A
Answer : 2

Q49. A current ratio of IC/IE is usually less than one and is called
…………

1. beta
2. theta
3. alpha
4. omega
Answer : 3

Q50. With the positive probe on an NPN base, an ohmmeter reading

between the other transistor terminals should be ……

1. open
2. infinite
3. low resistance
4. high resistance
Answer : 3

Q51. In a CE configuration, an emitter resistor is used for ……

1. stabilization
2. ac signal bypass
3. collector bias
4. higher gain
Answer : 1

Q52. Voltage-divider bias provides ……….

1. an unstable Q point
2. a stable Q point
3. a Q point that easily varies with changes in the transistor’s current
gain
4. a Q point that is stable and easily varies with changes in the
transistor’s current gain
Answer : 2

Q53. To operate properly, a transistor’s base-emitter junction must

be forward biased with reverse bias applied to which junction?

1. collector-emitter
2. base-collector
3. base-emitter
4. collector-base
Answer : 4

Q54. The ends of a load line drawn on a family of curves determine

……

1. saturation and cutoff

2. the operating point
3. the power curve
4. the amplification factor
Answer : 1

Q55. If VCC = +18 V, voltage-divider resistor R1 is 4.7 k , and R2 is

1500 , then the base bias voltage is ……….

1. 8.7 V
2. 4.35 V
3. 2.9 V
4. 0.7 V
Answer: 2

Q56. The C-B configuration is used to provide which type of gain?

1. voltage
2. current
3. resistance
4. power
Answer : 1

Q57. The Q point on a load line may be used to determine …………

1. VC
2. VCC
3. VB
4. IC
Answer : 3

Q58. A transistor may be used as a switching device or as a ………….

1. fixed resistor
2. tuning device
3. rectifier
4. variable resistor
Answer : 4

Q59. If an input signal ranges from 20–40  A (microamps), with an

output signal ranging from .5–1.5 mA (milliamps), what is the ac
beta?

1. 0.05
2. 20
3. 50
4. 500
Answer : 3

Q60. Beta’s current ratio is ……..

1. IC/IB
2. IC/IE
3. IB/IE
4. IE/IB
Answer: 1
Q61. A collector characteristic curve is a graph showing ………..

1. emitter current (IE) versus collector-emitter voltage (VCE) with

(VBB) base bias voltage held constant
2. collector current (IC) versus collector-emitter voltage (VCE) with
(VBB) base bias voltage held constant
3. collector current (IC) versus collector-emitter voltage (VC) with
(VBB) base bias voltage held constant
4. collector current (IC) versus collector-emitter voltage (VCC) with
(VBB) base bias voltage held constant
Answer: 2

Q62. With low-power transistor packages, the base terminal is

usually the ……….

1. tab end
2. middle
3. right end
4. stud mount
Answer: 2

Q63. When a silicon diode is forward biased,  VBE for a CE

configuration is ……..

1. voltage-divider bias
2. 0.4 V
3. 0.7 V
4. emitter voltage
Answer: 3

Q64. What is the current gain for a common-base configuration

where IE = 4.2 mA and IC = 4.0 mA?

1. 16.8
2. 1.05
3. 0.2
4. 0.95
Answer: 4

Q65. With a PNP circuit, the most positive voltage is probably

…………

1. ground
2. VC
3. VBE
4. VCC
Answer: 1

Q66. If a 2 mV signal produces a 2 V output, what is the voltage

gain?

1. 0.001
2. 0.004
3. 100
4. 1000
Answer: 4

Q67. Most of the electrons in the base of an NPN transistor flow

…………

1. out of the base lead

2. into the collector
3. into the emitter
4. into the base supply
Answer: 2

Q68. In a transistor, collector current is controlled by ………..

1. collector voltage
2. base current
3. collector resistance
4. all of the above
Answer: 2

Q69. Total emitter current is …………

1. IE – IC
2. IC + IE
3. IB + IC
4. IB – IC
Answer: 3

Q70. Often a common-collector will be the last stage before the load;

the main function(s) of this stage is to ………….

1. provide voltage gain

2. provide phase inversion
3. provide a high-frequency path to improve the frequency response
4. buffer the voltage amplifiers from the low-resistance load and
provide impedance matching for maximum power transfer
Answer: 4

Q71. For a CC configuration to operate properly, the collector-base

junction should be reverse biased, while forward bias should be
applied to …………… junction.

1. collector-emitter
2. base-emitter
3. collector-base
4. cathode-anode
Answer: 1

Q72. The input/output relationship of the common-collector and

common-base amplifiers is ………..

1. 270 degrees
2. 180 degrees
3. 90 degrees
4. 0 degrees
Answer: 4

Q73. If a transistor operates at the middle of the dc load line, a

decrease in the current gain will move the Q point ………….

1. off the load line

2. nowhere
3. up
4. down
Answer: 4

Q74. Which is the higher gain provided by a CE configuration?

1. voltage
2. current
3. resistance
4. power
Answer: 4
Q75. What is the collector current for a CE configuration with a beta
of 100 and a base current of 30  A?

1. 30  A
2. 0.3  A
3. 3 mA
4. 3 MA
Answer: 3
ultiple Choice Questions and Answers on FET ( Field Effect
Transistors )

In addition to reading the questions and answers on my site, I would

suggest you to check the following, on amazon, as well:

 Question Bank in Electronics & Communication Engineering

by Prem R Chadha
 A Handbook on Electronics Engineering – Illustrated
Formulae & Key Theory Concepts
Q1. A JFET has three terminals, namely …………

1. cathode, anode, grid

2. emitter, base, collector
3. source, gate, drain
4. none of the above
Answer : 3

Q2. A JFET is similar in operation to …………. valve

1. diode
2. pentode
3. triode
4. tetrode
Answer : 2

Q3. A JFET is also called …………… transistor

1. unipolar
2. bipolar
3. unijunction
4. none of the above
Answer : 1

Q4. A JFET is a ………… driven device

1. current
2. voltage
3. both current and voltage
4. none of the above
Answer : 2

Q5. The gate of a JFET is ………… biased

1. reverse
2. forward
3. reverse as well as forward
4. none of the above
Answer : 1

Q6. The input impedance of a JFET is …………. that of an ordinary

transistor

1. equal to
2. less than
3. more than
4. none of the above
Answer : 3

Q7. In a p-channel JFET, the charge carriers are …………..

1. electrons
2. holes
3. both electrons and holes
4. none of the above
Answer : 2

Q8. When drain voltage equals the pinch-off-voltage, then drain

current …………. with the increase in drain voltage

1. decreases
2. increases
3. remains constant
4. none of the above
Answer : 3

Q9. If the reverse bias on the gate of a JFET is increased, then width
of the conducting channel …………..

1. is decreased
2. is increased
3. remains the same
4. none of the above
Answer : 1

Q10. A MOSFET has …………… terminals

1. two
2. five
3. four
4. three
Answer : 4

Q11. A MOSFET can be operated with ……………..

1. negative gate voltage only

2. positive gate voltage only
3. positive as well as negative gate voltage
4. none of the above
Answer : 3

Q12. A JFET has ……….. power gain

1. small
2. very high
3. very small
4. none of the above
Answer : 2

Q13. The input control parameter of a JFET is ……………

1. gate voltage
2. source voltage
3. drain voltage
4. gate current
Answer : 1

Q14. A common base configuration of a pnp transistor is analogous

to ………… of a JFET

1. common source configuration

2. common drain configuration
3. common gate configuration
4. none of the above
Answer : 3

Q15. A JFET has high input impedance because …………

1. it is made of semiconductor material

2. input is reverse biased
3. of impurity atoms
4. none of the above
Answer : 2

Q16. In a JFET, when drain voltage is equal to pinch-off voltage, the

depletion layers ………

1. almost touch each other

2. have large gap
3. have moderate gap
4. none of the above
Answer : 1

Q17. In a JFET, IDSS is known as …………..

1. drain to source current

2. drain to source current with gate shorted
3. drain to source current with gate open
4. none of the above
Answer : 2

Q18. The two important advantages of a JFET are …………..

1. high input impedance and square-law property

2. inexpensive and high output impedance
3. low input impedance and high output impedance
4. none of the above
Answer : 1

Q19. …………. has the lowest noise-level

1. triode
2. ordinary trnsistor
3. tetrode
4. JFET
Answer : 4

Q20. A MOSFET is sometimes called ………. JFET

1. many gate
2. open gate
3. insulated gate
4. shorted gate
Answer : 3
Q21. Which of the following devices has the highest input
impedance?

1. JFET
2. MOSFET
3. Crystal diode
4. ordinary transistor
Answer : 2

Q22. A MOSFET uses the electric field of a ………. to control the

channel current

1. capacitor
2. battery
3. generator
4. none of the above
Answer : 1

Q23. The pinch-off voltage in a JFET is analogous to ………. voltage

in a vacuum tube

1. anode
2. cathode
3. grid cut off
4. none of the above
Answer : 3

Q24. This question will be available soon

Q25. In class A operation, the input circuit of a JFET is ……….

biased

1. forward
2. reverse
3. not
4. none of the above
Answer : 2

Q26. If the gate of a JFET is made less negative, the width of the
conducting channel……….

1. remains the same

2. is decreased
3. is increased
4. none of the above
Answer : 3

Q27. The pinch-off voltage of a JFET is about ……….

1. 5V
2. 0.6 V
3. 15 V
4. 25 V
Answer : 1

Q28. The input impedance of a MOSFET is of the order of ………..

1. Ω
2. a few hundred Ω
3. kΩ
4. several MΩ
Answer : 4

Q29. The gate voltage in a JFET at which drain current becomes

zero is called ……….. voltage

1. saturation
2. pinch-off
3. active
4. cut-off
Answer : 2

Q30. This question will be available soon

Q31. In a FET, there are ……….. pn junctions at the sides

1. three
2. four
3. five
4. two
Answer : 4

Q32. The transconductance of a JFET ranges from ……………..

1. 100 to 500 mA/V
2. 500 to 1000 mA/V
3. 0.5 to 30 mA/V
4. above 1000 mA/V
Answer : 3

Q33. The source terminal of a JEFT corresponds to ………….. of a

vacuum tube

1. plate
2. cathode
3. grid
4. none of the above
Answer : 2

Q34. The output characteristics of a JFET closely resemble the

output characteristics of a ………. valve

1. pentode
2. tetrode
3. triode
4. diode
Answer : 1

Q35. If the cross-sectional area of the channel in n-channel JEFT

increases, the drain current ……….

1. is increased
2. is decreased
3. remains the same
4. none of the above
Answer : 1

Q36. The channel of a JFET is between the …………….

1. gate and drain

2. drain and source
3. gate and source
4. input and output
Answer : 2

Q37. For VGS = 0 V, the drain current becomes constant when

VDS exceeds ………
1. cut off
2. VDD
3. VP
4. oV
Answer : 3

Q38. A certain JFET data sheet gives  VGS(off) = -4 V. The pinch-off

voltage Vp is ……..

1. +4 V
2. -4 V
3. dependent on VGS
4. data insufficient
Answer : 1

Q39. The constant-current region of a JFET lies between

1. cut off and saturation

2. cut off and pinch-off
3. o and IDSS
4. pinch-off and breakdown
Answer : 4

Q40. At cut-off, the JFET channel is ……….

1. at its widest point

2. completely closed by the depletion region
3. extremely narrow
4. reverse baised
Answer : 2

Q41. A MOSFET differs from a JFET mainly because ………………

1. of power rating
2. the MOSFET has two gates
3. the JFET has a pn junction
4. none of the above
Answer : 3

Q42. A certain D-MOSFET is biased at VGS = 0 V. Its data sheet

specifies IDSS = 20mA and VGS(off)  = -5 V. The value of the drain
current is …………

1. 20 mA
2. 0 mA
3. 40 mA
4. 10 mA
Answer : 1

Q43. A n-channel D-MOSFET with a positive VGS is operating in

…………

1. the depletion-mode
2. the enhancement-mode
3. cut off
4. saturation
Answer : 2

Q44. A certain p-channel E-MOSFET has VGS(th)  = -2V. If VGS=

0V, the drain current is ……….

1. 0 mA
2. ID(on)
3. maximum
4. IDSS
Answer : 1

Q45. In a common-source JFET amplifier, the output voltage is

…………………

1. 180o out of phase with the input

2. in phase with the input
3. 90o out of phase with the input
4. taken at the source
Answer : 1

Q46. In a certain common-source D-MOSFET amplifier, Vds =3.2 V

r.m. and Vgs = 280 mV r.m.s. The voltage gain is …………

1. 1
2. 11.4
3. 8.75
4. 3.2
Answer : 2
Q47. In a certain CS JFET amplifier,  RD= 1kΩ , RS=
560 Ω , VDD=10V and gm= 4500 μS. If the source resistor is
completely bypassed, the voltage gain is …………

1. 450
2. 45
3. 2.52
4. 4.5
Answer : 4

Q48. A certain common-source JFET has a voltage gain of 10. If the

source bypass capacitor is removed, ……………….

1. the voltage gain will increase

2. the transconductance will increase
3. the voltage gain will decrease
4. the Q-point will shift
Answer : 3

Q49. A CS JFET amplifier has a load resistance of 10 kΩ ,  RD=
820Ω . If gm= 5mS and Vin= 500 mV, the output signal voltage is
………..

1. 2.05 V
2. 25 V
3. 0.5 V
4. 1.89 V
Answer : 4

Q50. If load resistance in the above question (Q.49) is removed, the

output voltage will …………

1. increase
2. decrease
3. stay the same
4. be zero
Answer : 1

Q.51. When not in use, MOSFET pins are kept at the same potential
through the use of …………

1. shipping foil
2. nonconductive foam
3. conductive foam
4. a wrist strap
Answer: 3

Q.52. D-MOSFETs are sometimes used in series to construct a

cascode high-frequency amplifier to overcome the loss of …………..

1. low output impedance

2. capacitive reactance
3. high input impedance
4. inductive reactance
Answer: 3

Q.53. A “U” shaped, opposite-polarity material built near a JFET-

channel center is called the ……….

1. gate
2. block
3. drain
4. heat sink
Answer: 1

Q.54. When testing an n-channel D-MOSFET, resistance G to D

=  , resistance G to S =  , resistance D to SS =   and 500  ,
depending on the polarity of the ohmmeter, and resistance D to S =
500  . What is wrong?

1. short D to S
2. open G to D
3. open D to SS
4. nothing
Answer: 4

Q.55. In the constant-current region, how will the IDS change in an

n-channel JFET?

1. As VGS decreases ID decreases.
2. As VGS increases ID increases
3. As VGS decreases ID remains constant.
4. As VGS increases ID remains constant.
Answer: 1

Q.56. IDSS can be defined as ………

1. the minimum possible drain current
2. the maximum possible current with VGS held at –4 V
3. the maximum possible current with VGS held at 0 V
4. the maximum drain current with the source shorted
Answer: 3

Q.57. The input impedance of a common-gate configured JFET is

…………

1. very low
2. low
3. high
4. very high
Answer: 1

Q.58. A very simple bias for a D-MOSFET is called ……..

1. self biasing
2. gate biasing
3. zero biasing
4. voltage-divider biasing
Answer: 3

Q.59. With the E-MOSFET, when gate input voltage is zero, drain

current is …..

1. at saturation
2. zero
3. IDSS
4. widening the channel
Answer: 2

Q.60. With a 30-volt VDD, and an 8-kilohm drain resistor, what is

the E-MOSFET Q point voltage, with ID = 3 mA?

1. 6V
2. 10 V
3. 24 V
4. 30 V
Answer: 1

Q.61. When an input signal reduces the channel size, the process is

called …….
1. enhancement
2. substrate connecting
3. gate charge
4. depletion
Answer: 4

Q.62. Which JFET configuration would connect a high-resistance

signal source to a low-resistance load ?

1. source follower
2. common-source
3. common-drain
4. common-gate
Answer: 1

Q.63. When VGS = 0 V, a JFET is……….

1. saturated
2. an analog device
3. an open switch
4. an open switch
Answer: 1

Q.64. The electrons flow through a p-channel JFET from ……….. to

…………..

1. from source to drain

2. from source to gate
3. from drain to gate
4. from drain to source
Answer: 4

Q.65. When applied input voltage varies the resistance of a channel,

the result is called…………..

1. saturization
2. polarization
3. cutoff
4. field effect
Answer: 4

Q.66. When is a vertical channel E-MOSFET used?

1. for high frequencies

2. for high voltages
3. for high currents
4. for high resistances
Answer: 3

Q.67. When the JFET is no longer able to control the current, this

point is called the …………

1. breakdown region
2. depletion region
3. saturation point
4. pinch-off region
Answer: 1

Q.68.  With a JFET, a ratio of output current change against an

input voltage change is called as ………..

1. transconductance
2. siemens
3. resistivity
4. gain
Answer: 1

Q.69. Which type of JFET bias requires a negative supply voltage?

1. feedback
2. source
3. gate
4. voltage divider
Answer: 3

Q.70. How will a D-MOSFET input impedance change with signal

frequency?

1. As frequency increases input impedance increases.

2. As frequency increases input impedance is constant.’
3. As frequency decreases input impedance increases.
4. As frequency decreases input impedance is constant.
Answer: 3

Q.71. The type of bias most often used with E-MOSFET circuits

is………….

1. constant current
2. drain-feedback
3. voltage-divider
4. zero biasing
Answer: 2

Q.72. The transconductance curve of a JFET is a graph of

…………… vs ……….

1. IS versus VDS
2. IC versus VCE
3. ID versus VGS
4. ID × RDS
Answer: 3

Q.73. The common-source JFET amplifier has ………..

1. a very high input impedance and a relatively low voltage gain

2. a high input impedance and a very high voltage gain
3. a high input impedance and a voltage gain less than 1
4. no voltage gain
Answer: 1

Q.74. The overall input capacitance of a dual-gate D-MOSFET is

lower because the devices are usually connected ………..

1. in parallel
2. with separate insulation
3. with separate inputs
4. in series
Answer: 4

Q.75. Which component is considered to be an “OFF” devic.

1. transistor
2. JFET
3. D-MOSFET
4. E-MOSFET
Answer: 4

Q.76.  In an n-channel JFET, what will happen at the pinch-off

voltage?

1. the value of VDS at which further increases in VDS will cause no

further increase in ID
2. the value of VGS at which further decreases in VGS will cause no
further increases in ID
3. the value of VDG at which further decreases in VDG will cause no
further increases in ID
4. the value of VDS at which further increases in VGS will cause no
further increases in ID
Answer: 1

This set of Power Electronics Multiple Choice Questions & Answers (MCQs)
focuses on “MOSFETs-1”.

1. The MOSFET combines the areas of _______ & _________

a) field effect & MOS technology
b) semiconductor & TTL
c) mos technology & CMOS technology
d) none of the mentioned
View Answer

Answer: a
Explanation: It is an enhancement of the FET devices (field effect) using MOS
technology.

2. Which of the following terminals does not belong to the MOSFET?

a) Drain
b) Gate
c) Base
d) Source
View Answer

Answer: c
Explanation: MOSFET is a three terminal device D, G & S.

3. Choose the correct statement

a) MOSFET is a uncontrolled device
b) MOSFET is a voltage controlled device
c) MOSFET is a current controlled device
d) MOSFET is a temperature controlled device
View Answer

Answer: b
Explanation: It is a voltage controlled device.

4. Choose the correct statement(s)

i) The gate circuit impedance of MOSFET is higher than that of a BJT
ii) The gate circuit impedance of MOSFET is lower than that of a BJT
iii) The MOSFET has higher switching losses than that of a BJT
iv) The MOSFET has lower switching losses than that of a BJT
a) Both i & ii
b) Both ii & iv
c) Both i & iv
d) Only ii
View Answer

Answer: c
Explanation: MOSFET requires gate signals with lower amplitude as compared
to BJTs & has lower switching losses.

5. Choose the correct statement

a) MOSFET is a unipolar, voltage controlled, two terminal device
b) MOSFET is a bipolar, current controlled, three terminal device
c) MOSFET is a unipolar, voltage controlled, three terminal device
d) MOSFET is a bipolar, current controlled, two terminal device
View Answer

Answer: c
Explanation: MOSFET is a three terminal device, Gate, source & drain. It is
voltage controlled unlike the BJT & only electron current flows.

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6. The arrow on the symbol of MOSFET indicates
a) that it is a N-channel MOSFET
b) the direction of electrons
c) the direction of conventional current flow
d) that it is a P-channel MOSFET
View Answer

Answer: b
Explanation: The arrow is to indicate the direction of electrons (opposite to the
direction of conventional current flow).
7. The controlling parameter in MOSFET is
a) Vds
b) Ig
c) Vgs
d) Is
View Answer

Answer: b
Explanation: The gate to source voltage is the controlling parameter in a
MOSFET.

8. In the internal structure of a MOSFET, a parasitic BJT exists between the

a) source & gate terminals
b) source & drain terminals
c) drain & gate terminals
d) there is no parasitic BJT in MOSFET
View Answer

Answer: b
Explanation: Examine the internal structure of a MOSFET, notice the n-p-n
structure between the drain & source. A p-channel MOSFET will have a p-n-p
structure.

9. In the transfer characteristics of a MOSFET, the threshold voltage is the

measure of the
a) minimum voltage to induce a n-channel/p-channel for conduction
b) minimum voltage till which temperature is constant
c) minimum voltage to turn off the device
d) none of the above mentioned is true
View Answer

Answer: a
Explanation: It is the minimum voltage to induce a n-channel/p-channel which
will allow the device to conduct electrically through its length.

10.The output characteristics of a MOSFET, is a plot of

a) Id as a function of Vgs with Vds as a parameter
b) Id as a function of Vds with Vgs as a parameter
c) Ig as a function of Vgs with Vds as a parameter
d) Ig as a function of Vds with Vgs as a parameter
View Answer
 Answer: b
Explanation: It is Id vs Vds which are plotted for different values of Vgs (gate to
source voltage)

This set of Power Electronics Multiple Choice Questions & Answers (MCQs)
focuses on “MOSFETs-1”.

1. The MOSFET combines the areas of _______ & _________

a) field effect & MOS technology
b) semiconductor & TTL
c) mos technology & CMOS technology
d) none of the mentioned
View Answer

Answer: a
Explanation: It is an enhancement of the FET devices (field effect) using MOS
technology.

2. Which of the following terminals does not belong to the MOSFET?

a) Drain
b) Gate
c) Base
d) Source
View Answer

Answer: c
Explanation: MOSFET is a three terminal device D, G & S.

3. Choose the correct statement

a) MOSFET is a uncontrolled device
b) MOSFET is a voltage controlled device
c) MOSFET is a current controlled device
d) MOSFET is a temperature controlled device
View Answer

Answer: b
Explanation: It is a voltage controlled device.

4. Choose the correct statement(s)

i) The gate circuit impedance of MOSFET is higher than that of a BJT
ii) The gate circuit impedance of MOSFET is lower than that of a BJT
iii) The MOSFET has higher switching losses than that of a BJT
iv) The MOSFET has lower switching losses than that of a BJT
a) Both i & ii
b) Both ii & iv
c) Both i & iv
d) Only ii
View Answer

Answer: c
Explanation: MOSFET requires gate signals with lower amplitude as compared
to BJTs & has lower switching losses.

5. Choose the correct statement

a) MOSFET is a unipolar, voltage controlled, two terminal device
b) MOSFET is a bipolar, current controlled, three terminal device
c) MOSFET is a unipolar, voltage controlled, three terminal device
d) MOSFET is a bipolar, current controlled, two terminal device
View Answer

Answer: c
Explanation: MOSFET is a three terminal device, Gate, source & drain. It is
voltage controlled unlike the BJT & only electron current flows.

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6. The arrow on the symbol of MOSFET indicates
a) that it is a N-channel MOSFET
b) the direction of electrons
c) the direction of conventional current flow
d) that it is a P-channel MOSFET
View Answer

Answer: b
Explanation: The arrow is to indicate the direction of electrons (opposite to the
direction of conventional current flow).

7. The controlling parameter in MOSFET is

a) Vds
b) Ig
c) Vgs
d) Is
View Answer

Answer: b
Explanation: The gate to source voltage is the controlling parameter in a
MOSFET.
8. In the internal structure of a MOSFET, a parasitic BJT exists between the
a) source & gate terminals
b) source & drain terminals
c) drain & gate terminals
d) there is no parasitic BJT in MOSFET
View Answer

Answer: b
Explanation: Examine the internal structure of a MOSFET, notice the n-p-n
structure between the drain & source. A p-channel MOSFET will have a p-n-p
structure.

9. In the transfer characteristics of a MOSFET, the threshold voltage is the

measure of the
a) minimum voltage to induce a n-channel/p-channel for conduction
b) minimum voltage till which temperature is constant
c) minimum voltage to turn off the device
d) none of the above mentioned is true
View Answer

Answer: a
Explanation: It is the minimum voltage to induce a n-channel/p-channel which
will allow the device to conduct electrically through its length.

10.The output characteristics of a MOSFET, is a plot of

a) Id as a function of Vgs with Vds as a parameter
b) Id as a function of Vds with Vgs as a parameter
c) Ig as a function of Vgs with Vds as a parameter
d) Ig as a function of Vds with Vgs as a parameter
View Answer

Answer: b
Explanation: It is Id vs Vds which are plotted for different values of Vgs (gate to
source voltage)