QH8KA2: V 30V R (Max.) 35mΩ I ±4.5A P 1.5W

QH8KA2
　　30V Nch+Nch Power MOSFET 　　 Datasheet
l Outline
TSMT8 　　　　　　
VDSS 30V
　
RDS(on)(Max.) 35mΩ
　　
ID ±4.5A
　　
PD 1.5W
　　　　　　　　　　　　
l Features l Inner circuit

1) Low on - resistance.
2) Small Surface Mount Package (TSMT8).
3) Pb-free lead plating ; RoHS compliant.
4) Halogen Free.
l Packaging specifications
Embossed
Packing Tape
l Application Reel size (mm) 180
Switching Type Tape width (mm) 8
Motor Drive Basic ordering unit (pcs) 3000
Taping code TR
Marking KA2
l Absolute maximum ratings (Ta = 25°C) <It is the same ratings for the Tr1 and Tr2>
Parameter Symbol Value Unit
Drain - Source voltage VDSS 30 V
Continuous drain current ID ±4.5 A
Pulsed drain current ID, pulse*1 ±12 A
Gate - Source voltage VGSS ±20 V
Avalanche energy, single pulse EAS*2 1.5 mJ
Avalanche current IAS*2 4.5 A
Power dissipation PD*3 1.5 W
Junction temperature Tj 150 ℃
Range of storage temperature Tstg -55 to +150 ℃
　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　
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© 2015 ROHM Co., Ltd. All rights reserved. 1/11 20150730 - Rev.002 　　
QH8KA2 　　　　　　　　　　　　　　 Datasheet
　　　　　　　　　　　　　　　　　　
l Thermal resistance
Values
Parameter Symbol Unit
Min. Typ. Max.
Thermal resistance, junction - ambient RthJA*3 - 83.3 -
l Electrical characteristics (T a = 25°C) <It is the same characteristics for the Tr1 and Tr2> 　　　
Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
Drain - Source breakdown V(BR)DSS VGS = 0V, ID = 1mA
voltage 30 - - V
Breakdown voltage 　ΔV(BR)DSS　 ID = 1mA

- 21 - mV/℃
temperature coefficient 　　 ΔTj 　　 referenced to 25℃
Zero gate voltage IDSS VDS = 30V, VGS = 0V - - 1 μA
drain current
Gate - Source IGSS VDS = 0V, VGS = ±20V - - ±100 nA
leakage current
Gate threshold VGS(th) VDS = VGS, ID = 1mA 1.0 - 2.5 V
voltage
Gate threshold voltage 　ΔVGS(th) 　 ID = 1mA
- -3 - mV/℃
temperature coefficient 　　 ΔTj 　　 referenced to 25℃
Static drain - source VGS = 10V, ID = 4.5A - 25 35

RDS(on)*4 mΩ
on - state resistance VGS = 4.5V, ID = 4.5A - 40 56
Transconductance gfs*4 VDS = 5V, ID = 4.5A 1.4 - - S
*1 Pw ≦ 10μs, Duty cycle ≦ 1%

*2 L ⋍ 0.1mH, V DD = 15V, RG = 25Ω, STARTING Tch = 25℃ Fig.3-1,3-2
*3 MOUNTED ON A CERAMIC BOARD
*4 Pulsed
　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　
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© 2015 ROHM Co., Ltd. All rights reserved. 2/11 20150730 - Rev.002
l Electrical characteristics (Ta = 25°C) <It is the same characteristics for the Tr1 and Tr2>
Values
Min. Typ. Max.
Input capacitance Ciss VGS = 0V - 365 -
Output capacitance Coss VDS = 10V - 62 - pF
Reverse transfer capacitance Crss f = 1MHz - 50 -
Turn - on delay time td(on)*4 VDD ⋍ 15V,VGS = 10V - 7.2 -
Rise time tr*4 ID = 2.2A - 8.0 -
ns
Turn - off delay time td(off)*4 RL = 6.8Ω - 12.0 -
Fall time tf*4 RG = 10Ω - 5.7 -
l Gate charge characteristics (Ta = 25°C) <It is the same characteristics for the Tr1 and Tr2>
Values
Min. Typ. Max.
VGS = 10V - 8.4 -
Total gate charge Qg*4
VDD ⋍ 15V - 4.7 -
ID = 4.5A
nC
Gate - Source charge Qgs*4 VGS = 4.5V - 1.7 -
Gate - Drain charge Qgd*4 - 1.6 -
l Body diode electrical characteristics (Source-Drain) (Ta = 25°C)

<It is the same characteristics for the Tr1 and Tr2>
Values
Min. Typ. Max.
Body diode continuous IS - - 1.0
forward current
Ta = 25℃ A
Body diode ISP*1 - - 12
pulse current
Forward voltage VSD*4 VGS = 0V, IS = 1.0A - - 1.2 V
Reverse recovery time trr*4 IS = 4.5A, VGS = 0V - 14.1 - ns
Reverse recovery charge Qrr*4 di/dt = 100A/μs - 4.7 - nC
　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　
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l Electrical characteristic curves
Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal 　 Fig.4 Single Pulse Maximum Power 　　　　
　　　　　　　Resistance vs. Pulse Width 　　　　dissipation
　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　
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Fig.5 Typical Output Characteristics(I) Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs. Junction

　Temperature
　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　
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Fig.8 Typical Transfer Characteristics Fig.9 Gate Threshold Voltage vs. Junction
　Temperature
Fig.10 Tranceconductance 　vs. Drain

Current
　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　
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Fig.11 Drain Current Derating Curve Fig.12 Static Drain - Source On - State
　Resistance vs. Gate Source Voltage
Fig.13 Static Drain - Source On - State

　Resistance vs. Junction Temperature
　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　
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Fig.14 Static Drain - Source On - State Fig.15 Static Drain - Source On - State
　Resistance vs. Drain Current(I) 　Resistance vs. Drain Current(II)
Fig.16 Typical Capacitance vs. Drain -

　Source Voltage
　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　
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Fig.17 Switching Characteristics Fig.18 Dynamic Input Characteristics
Fig.19 Source Current vs. Source Drain

　Voltage
　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　
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l Measurement circuits <It is the same for the Tr1 and Tr2>
Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform
Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform
　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　
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l Dimensions
　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　
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Datasheet
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QH8KA2 - Web Page
Distribution Inventory
Part Number QH8KA2

Package TSMT8
Unit Quantity 3000
Minimum Package Quantity 3000
Packing Type Taping
Constitution Materials List inquiry
RoHS Yes

QH8KA2: V 30V R (Max.) 35mΩ I ±4.5A P 1.5W

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QH8KA2: V 30V R (Max.) 35mΩ I ±4.5A P 1.5W

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QH8KA2

30V Nch+Nch Power MOSFET Datasheet

l Features l Inner circuit

Breakdown voltage ΔV(BR)DSS ID = 1mA

Static drain - source VGS = 10V, ID = 4.5A - 25 35

*1 Pw ≦ 10μs, Duty cycle ≦ 1%

l Body diode electrical characteristics (Source-Drain) (Ta = 25°C)

l Electrical characteristic curves

l Electrical characteristic curves

Fig.5 Typical Output Characteristics(I) Fig.6 Typical Output Characteristics(II)

Fig.7 Breakdown Voltage vs. Junction

l Electrical characteristic curves

Fig.10 Tranceconductance vs. Drain

l Electrical characteristic curves

Fig.13 Static Drain - Source On - State

l Electrical characteristic curves

Fig.16 Typical Capacitance vs. Drain -

l Electrical characteristic curves

Fig.17 Switching Characteristics Fig.18 Dynamic Input Characteristics

Fig.19 Source Current vs. Source Drain

Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms

Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform

Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform

Part Number QH8KA2

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　　30V Nch+Nch Power MOSFET 　　 Datasheet

Breakdown voltage 　ΔV(BR)DSS　 ID = 1mA

Fig.10 Tranceconductance 　vs. Drain