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Student Name:
Sanzhar Askaruly
Name of Lecturer:
Alexander Ruderman
Personal Tutor:
Nazim Mir-Nasiri
Astana, 2014
Introduction
This lab session has a purpose of practical implementation of theoretical knowledge about
transistors. There are four parts in the work:
Apparatus
The following equipment was used during the lab:
MCM3/EV board
Power supply PSLC or PS1-PSU/EV
Accessories
As in the previous lab, the whole lab work is done with the MCM/EV board. The oscilloscope
was used for the visualization of the waveforms. Screwdriver was used for the variable resistor
configuration.
Work process
As it can be seen from the graph, collector current steadily increases with the increase in base
current. Only when the base current exceeds 80 µA, the coefficient hFE starts to decrease.
6. Transistors Biasing
Next, with the help of jumpers the circuit shown in figure 2 was built.
𝑉𝐶𝐶 − 𝑉𝐶𝐸𝑄 20 − 0
𝐼𝑐𝑠𝑎𝑡 = = = 42.68 𝑚𝐴
𝑅2 468.6 𝑚𝐴
Q3. When the temperature increases what happens to this voltage and current?
d) the current increases and the voltage drops
After the, heating resistor was removed. Connecting J11 jumper, we measured IB current using
ammeter. Collector current stays constant. As a result, IC = 10 mA and IB = 26 µA. Therefore,
current gain was calculated:
𝐼𝐶
ℎ𝐹𝐸 = = 385.
𝐼𝐵
Further, after disconnection of J10 and J11 jumpers, the resistance RBM was measured. The
equivalent base resistance is estimated using this formula: