MBR3030PT - MBR3060PT

30A SCHOTTKY BARRIER RECTIFIER

Features
· Schottky Barrier Chip TO-3P
· Guard Ring Die Construction for Dim Min Max
Transient Protection
A 3.20 3.50
· Low Power Loss, High Efficiency
· High Surge Capability A B 4.59 5.16
· High Current Capability and Low Forward H B C 20.80 21.30
Voltage Drop D 19.70 20.20
· For Use in Low Voltage, High Frequency E 2.10 2.40
Inverters, Free Wheeling, and Polarity S J
C G 0.51 0.76
Protection Applications
· Plastic Material: UL Flammability R K H 15.90 16.40
Classification Rating 94V-0 J 1.70 2.70

P* L K 3.10Æ 3.30Æ
Q
Mechanical Data *2 Places L 3.50 4.51
G D
· Case: Molded Plastic N M 5.20 5.70

· Terminals: Plated Leads Solderable per N 1.12 1.22

MIL-STD-202, Method 208 P 1.93 2.18
E
· Polarity: As Marked on Body Q 2.97 3.22
M M
· Marking: Type Number R 11.70 12.80
· Weight: 5.6 grams (approx.) S 4.30 Typical
· Mounting Position: Any All Dimensions in mm

Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic Symbol MBR MBR MBR MBR MBR MBR Unit

3030PT 3035PT 3040PT 3045PT 3050PT 3060PT
Peak Repetitive Reverse Voltage VRRM
Working Peak Reverse Voltage VRWM 30 35 40 45 50 60 V
DC Blocking Voltage VR
RMS Reverse Voltage VR(RMS) 21 24.5 28 31.5 35 42 V
Average Rectified Output Current @ TC = 125°C IO 30 A
(Note 1)
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load IFSM 200 A
(JEDEC Method)
Forward Voltage Drop @ IF = 20A, TC = 25°C VFM 0.65 0.75
0.60 0.65 V
per element (Note 3) @ IF = 20A, TC = 125°C
Peak Reverse Current @ TC = 25°C IRM 1.0 5.0
60 100 mA
at Rated DC Blocking Voltage, per element @ TC = 125°C
Typical Junction Capacitance (Note 2) Cj 700 pF
Typical Thermal Resistance Junction to Case (Note 1) RqJc 1.4 2.0 K/W
Voltage Rate of Change (Rated VR) dV/dt 10,000 V/µs
Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C
Notes: 1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Pulse width £300 ms, duty cycle £2%.

DS23017 Rev. E-2 1 of 2 MBR3030PT - MBR3060PT

 30 100

IF, INSTANTANEOUS FORWARD CURRENT (A)

I(AV), AVERAGE FWD CURRENT (A)
24
MBR 3030PT - MBR 3045PT

10
18

12 MBR 3050PT - MBR 3060PT

1.0

6
Tj = 25°C
Pulse width = 300µs
2% duty cycle
0 0.1
0 50 100 150 0 0.2 0.4 0.6 0.8
TC, CASE TEMPERATURE (°C) VF, INSTANTANEOUS F0RWARD VOLTAGE (V)
Fig. 1 Fwd Current Derating Curve Fig. 2 Typical Forward Characteristics

300 4000
Tj = 25°C
Tj = 25°C f = 1MHz
IFSM, PEAK FWD SURGE CURRENT (A)

8.3ms Single half-wave

250 JEDEC Method

Cj, CAPACITANCE (pF)

200
1000

150

100

50

0 100
1 10 100 0.1 1.0 10 100
NUMBER OF CYCLES AT 60Hz VR, REVERSE VOLTAGE (V)
Fig. 3 Max Non-Repetitive Surge Current Fig. 4 Typical Junction Capacitance

100
IR, INSTANTANEOUS REVERSE CURRENT (mA)

Tj = 125°C
10

1.0 Tj = 75°C

0.1
Tj = 25°C

0.01
0 20 40 60 80 100 120 140

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

Fig. 5 Typical Reverse Characteristics

DS23017 Rev. E-2 2 of 2 MBR3030PT - MBR3060PT