MCQ in Industrial Electronics Part 1 5.

What is basically a two-terminal parallel-inverse

combination of semiconductor layers that permits
Choose the letter of the best answer in each triggering in either direction?
questions.
A. Diac
1. What is a nucleonic sensing method employing
usually one or more radioisotope sources and B. Triac
radiation detectors?
C. Quadrac
A. Radiation sensing
D. Shockley Diode
B. Sonic level sensing

C. Conductivity level sensing

6. What is the typical value of the interbase
D. Dielectric variation sensing resistance of UJTs?

A. 20 KΩ

2. What is concerned with the measurement of B. Between 4 to 4 KΩ

electric signals on the scalp with arise from the
underlying neural activity in the brain (including C. 4 KΩ
synaptic sources)?
D. Between 4 to 10 KΩ
A. ECG

B. EEG
7. PUT stands for
C. Ultrasound
A. Programmable Unijunction Transistor
D. EKG
B. Programmable Universal Transistor

C. Pulse Unijunction Transistor

3. In therapeutic radiology and in nuclear medicine,
the energies of interest range from about D. Pulse Universal Transistor

A. 10 to 100 KeV

B. 100 to 10000 KeV 8. Which transistor conducts current in both

directions when turned on?
C. 10000 to 10000 KeV
A. Diac
D. 1 to 10 KeV
B. SCR

C. Quadrac
4. Which of the following is a four-layer diode with
an anode gate and a cathode gate? D. SCS

A. SCS

B. SCR 9. What is a three terminal device used to control

large current to a load?
C. SBS
A. SCR
D. SUS
B. SCS

C. GTO

D. Thyristor
 D. anode, source, gate

10. What is the other term for thermoelectric effect?

A. Seebeck effect 15. A triac is equivalent to two SCRs

B. Hall effect A. in parallel

C. Photoelectric effect B. in inverse-parallel

D. Thermal effect C. in series

D. in inverse-series

11. What are the regions corresponding to open-

circuit condition for the controlled rectifier which
block the flow of charge from anode to cathode? 16. In diagnostic radiology and for superficial
therapy purposes, the energy spectrum of radiation
A. Forward blocking regions varies from about

B. Reverse blocking regions A. 1 to 10 KeV

C. Breakdown regions B. 10 to 100 KeV

D. Both A and B above C. 100 to 10000 KeV

D. 10000 to 100000 KeV

12. The V-I characteristics for a triac in the first and

third quadrants are essentially identical to those of
________ in the quotation. 17. The x-ray region of the electromagnetic
spectrum has a corresponding range of wavelengths
A. SCR from

B. UJT A. 0.1 to 0.0001 nm

C. Transistor B. 0.1 to 0.0001 pm

D. SCS C. 0.1 to 0.0001 μm

D. 0.1 to 0.0001 mm

13. When the temperature increases, the inter-base

resistance of a UJT
18. The three terminals of an SCR are the
A. Remains unchanged
A. anode, cathode, and grid
B. Increases
B. cathode, anode, gate
C. Decreases
C. anode, cathode, drain
D. is zero
D. drain, source, gate

14. The three terminals of a triac are

19. If a body is considered as a conducting sphere
A. drain, source, gate of 0.5m radius its capacitance to infinity is

B. two main terminals and a gate terminal A. 55 pF

C. cathode, anode and gate B. 55 nF

C. 55 μF C. Four

D. 55 F D. Five

20. How many semiconductor layers does an SCR 25. An SCR combines the feature of
have?
A. a rectifier and resistance
A. Four
B. a rectifier and capacitor
B. Two
C. a rectifier and transistor
C. Three
D. a rectifier and inductor
D. Five

26. Which is the control element in an SCR?

21. A triac is a _______ switch.
A. Anode
A. unidirectional
B. Cathode
B. mechanical
C. Gate
C. bidirectional
D. Cathode supply
D. omnidirectional

27. How many semiconductor layers does a triac

22. Which of the following is the normal way to have?
turn on an SCR?
A. Two
A. By breakover voltage
B. Four
B. By appropriate anode current
C. Three
C. By appropriate cathode current
D. One
D. By appropriate gate current

28. A diac has how many semiconductor layers?

23. A triac can pass a portion of ________ half
cycle through the load A. Three

A. only positive B. Four

B. only negative C. Two

C. both positive and negative D. Five

D. neither positive nor negative

29. The p-type emitter of a UJT is _______ doped.

24. A diac has how many terminals? A. lightly

A. Two B. moderately

B. Three C. heavily
D. not

35. An effect that reduces the possibility of

accidental triggering of the SCS.
30. A diac has
A. Miller effect
A. one pn junction
B. Rate effect
B. three pn junctions
C. End effect
C. two pn junctions
D. Flywheel effect
D. four pn junctions

36. Which of the following is a common application

31. A UJT is sometimes called a _______ diode. of UJT?

A. double-based A. Amplifier

B. single-based B. Rectifier

C. a rectifier C. Mulitivibrator

D. a switching diode D. Sawtooth generator

32. A diac is _______ switch. 37. Which device does not have a gate terminal?

A. an AC A. Triac

B. a mechanical B. SCR

C. a dc C. FET

D. both ac and dc D. Diac

33. An SCR is made of silicon and not germanium 38. An SCR is a _______ triggered device.
because silicon.
A. current
A. is inexpensive
B. power
B. has low leakage current
C. voltage
C. is mechanically strong
D. noise
D. is tetravalent

39. When UJTs is turned on, the resistance between

34. What is the control element in an SCR? emitter terminal and lower base terminal

A. Gate A. remains unchanged

B. Anode B. increases

C. Grid C. decreases

D. Cathode D. becomes zero

40. The UJT has 45. AC power in a load can be controlled by
connecting
A. two pn junctions
A. two SCRs in series
B. three pn junctions
B. two SCRs in parallel
C. one pn junction
C. two SCRs in parallel opposition
D. four on junction
D. two SCRs in series opposition

41. The UJT may be used as

46. Which equation defines the intrinsic stand off
A. an amplifier ratio (η) of UJTs?

B. a rectifier A. RB1 / (RB1 + RB2)

C. a sawtooth generator B. (RB1 + RB2) / RB1

D. a multivibrator C. (RB1 + RB2) / RB2

D. RB1 + RB2

42. Which of the following is the normal way to

turn on a diac?
47. To turn off the SCR, which of the following is
A. By breakover voltage done?

B. By gate voltage A. Reduce gate voltage to zero

C. By gate current B. Reverse bias the gate

D. By anode current C. Reduce anode voltage to zero

D. Reduce cathode voltage to zero

43. Power electronics deals with the control of ac

power at what frequencies essentially?
48. Control system that maintains a speed voltage,
A. 20 KHz or other variable within specified limits of a preset
level.
B. 1000 KHz
A. Controller
C. Frequencies less than 10 Hz
B. Regulator
D. 60 Hz frequency
C. Sensor

D. Computer
44. When the emitter terminal of a UJT is open, the
resistance between the base-terminals is generally

A. low 49. To turn on the UJT, the forward bias on emitter

diode should be ________ the peak point voltage.
B. extremely low
A. more than
C. high
B. less than
D. extremely high
C. equal to C. Thyristor

D. twice D. LASCR

50. When the temperature increases, the intrinsic 55. A diac is simply
stand off ratio
A. a single junction
A. increases
B. a three junction device
B. decreases
C. a triac without a gate terminal
C. essentially constant
D. the SCR
D. becomes zero

51. What is dimensionless parameter of the second-

order characteristic equation? 56. What region lies between the peak point and
valley point of UJT emitter characteristic?
A. Damping ratio
A. Saturation
B. Accuracy
B. Cut off
C. Efficiency ratio
C. Negative resistance
D. Transfer function ratio
D. Positive resistance

52. What is the ratio of two exponential functions of

time called? 57. What refers to the application of electronic
theory, technology, instrumentation, and computing
A. Transfer function system to biological research and medical
problems?
B. Damping ratio
A. Medical electronics
C. Efficiency
B. Genetics electronics
D. Gain
C. Biomedical engineering

D. Biomedical electronics
53. A diac is turned on by

A. breakover voltage
58. Which device exhibits negative resistance
B. gate current region?

C. gate voltage A. Diac

D. anode current B. Triac

C. Transistor

54. An SCR whose state is controlled by the light D. UJT

falling upon a silicon semiconductor layer of the
device.

A. SCS 59. The UJT operates in what region after peak

point?
B. GTO
A. Cut off 64. The triac is fundamentally a/an _________ with
a gate terminal for controlling the turn-on
B. Negative resistance conditions of the bilateral device in either direction.

C. Saturation A. SCR

D. Positive resistance B. Quadric

C. Shockley diode

60. SCR is a rectifier constructed of silicon D. Diac

material. Silicon is chosen because

A. it is the most abundant material

65. When the supply voltage exceeds the breakover
B. of its strength and ruggedness voltage of an SCR, it

C. it is much cheaper than any other material A. starts conducting

D. of its high temperature and power capabilities B. stops conducting

C. conducts leakage current

61. A transduction principle used primarily in D. conducts terminal current

optical sensors.

A. Photoconductive transduction
66. The step response of a first order systems is
B. Photovoltaic transduction given by

C. Electromagnetic transduction A. y(t) = A0

D. Piezoelectric transduction B. y(t) = A0 + A1es1t + A2es2t +A3es3t

C. y(t) = A0 + A1es1t + A2es2t

62. What is a solid state equivalent of a gas filled D. y(t) = A0 + A1es1t

triode?

A. Triac
67. A feedback control system in which the
B. Thyristor controlled variable is mechanical position.

C. SCR A. Closed-loop feedback control system

D. SCS B. Open-loop feedback control system

C. Servomechanism

63. The supply voltage is generally ________ that D. Mechanical servomechanism

of breakover voltage in an SCR.

A. equal to
68. What is that voltage above when the SCR enters
B. less than the conduction region?

C. greater than A. Reverse breakover voltage

D. twice B. Forward breakover voltage

C. Holding voltage
D. Trigger voltage B. 10 mA

C. 30 mA

69. A locus or path of the roots traced out on the s- D. 40 mA

plane as a parameter is changed.

A. Root locus
74. What is an automatic speed control device using
B. Hyperbola the centrifugal force on rotating flyweights as the
feedback element?
C. Parabola
A. Regulator
D. Circle
B. Flywheel governor

C. Field control
70. A control system in which the output is related
to the input by device parameters only. D. Throttle valve

A. Open-loop control system

B. Closed-loop control system 75. What is the sensing element of acceleration

transducer?
C. Servomechanism
A. Damper
D. Feedback control system
B. Spring

C. Seismic mass
71. What is that value of current below which the
SCR switches from the conduction state to the D. Crystal
forward blocking region under stated conditions?

A. Holding current
76. What are some areas where GTO is applicable?
B. Forward current
A. Counters
C. Reverse current
B. Pulse generators
D. Trigger current
C. Multivibrators

D. All of the above

72. Which is equivalent to a zener or avalanche
region of the fundamental two-layer semiconductor
diode?
77. What Greek word which means “switch”?
A. Reverse breakdown voltage
A. Ristor
B. Forward breakdown voltage
B. Trans
C. Breakdown voltage
C. Thy
D. Breakover voltage
D. Thyristor

73. What is the required gate triggering current of

GTO? 78. What is the typical turn-on time of an SCR?

A. 20 mA A. 1 μs
B. 5 μs 83. What is one of the most widely used sensing
elements particularly for pressure ranges higher
C. 10 μs than 2 MPa?

D. 3 μs A. Bellows

B. Bourdon tube

79. An SCR is a solid state equivalent of which C. Capsule

tube?
D. Straight tube
A. Triode

B. Gas-filled triode
84. Which of the following can change the angle of
C. Pentode conduction in SCR?

D. Tetrode A. Changing anode voltage

B. Changing gate voltage

80. The gate of an SCR is ________ with respect to C. Reverse biasing the gate
its cathode.
D. Changing cathode voltage
A. positive

B. at zero potential
85. An SCR is a member of what family?
C. negative
A. Thyrector
D. at infinite potential
B. Thyratron

C. Thyristor
81. A normally operated SCR has an anode which is
________ with respect to cathode. D. Transistor

A. negative

B. positive 86. How many pn junction does SCRs have?

C. at zero potential A. Two

D. at infinite potential B. Four

C. Three

82. What device measures humidity directly with a D. Five

single sensing element?

A. Hygrometer
87. Which of the following is NOT a method
B. Tachometer primarily used for density sensing?

C. Venturi meter A. Sonic

D. Hydrometer B. Radiations

C. Vibrating element

D. Differential
88. When SCR starts conducting, then _________ 93. Acceleration transducers are also called
losses all control.
A. gyros
A. gate
B. force transducers
B. anode
C. tachometers
C. cathode
D. accelerometers
D. anode supply

94. When an SCR is combined to a switch, it is

89. An SCR when turned on has a typical voltage considered as a _______ switch.
across of
A. bidirectional
A. zero
B. mechanical
B. 0.1 V
C. unidirectional
C. infinite
D. omnidirectional
D. 1 V

95. When the firing angle of SCR is increased, its

90. The typical turn-off time of an SCR is about output

A. 20 to 40 μs A. decreases

B. 5 to 40 μs B. increases

C. 1 to 5 μs C. remains unchanged

D. 15 to 25 μs D. doubles

91. An SCR is made of what material? 96. When the SCR is OFF, the current in the circuit
is
A. Silicon
A. exactly zero
B. Carbon
B. large leakage current
C. Germanium
C. small leakage current
D. Gallium-arsenide
D. thermal current

92. ECG stands for electrocardiography while EEG

stands for? 97. The SCR can exercise control over ________ of
ac supply.
A. electroextracellugraphy
A. positive or negative half-cycle
B. electroemyography
B. both positive and negative half-cycles
C. electroencephalography
C. only positive half-cycle
D. electrovectorcardiography
D. only negative half-cycle d. Supply voltage

98. What is the most widely used altitude and 103. Also known as a four-layer diode.
altitude-rate transducers?
a. Diac
A. Flowmeter
b. Shockley diode
B. Psychometer
c. Zener diode
C. Gyro
d. FET
D. Gygrometer

104. The thyristor counterpart of the unijunction

99. What sensing element is typically made from a transistor.
thin-walled tube formed into deep convolutions and
sealed at one end, whose displacement can then be a. UJT
made to act on a transduction element?
b. PUT
A. Diaphragm
c. SBS
B. Bellow
d. SCS
C. Capsule

D. Bourdon tube
105. Minimum current required to keep a thyristor
“on”.

100. The voltage across an SCR when it is turned a. Holding current

on is about
b. Trigger current
A.0.5 V
c. Supply current
B. 0.1 V
d. Collector current
C. 1 V

D. 5 V
106. A unidirectional-three terminal device, the
101. Referred to a bidirectional trigger diode. most popular of thyristors.

a. Triac a. SCS

b. UJT b. Triac

c. BJT c. UJT

d. Diac d. SCR

102. Voltage required to turn on any thyristor. 107. The angle of an AC supply voltage during
which an SCR is “off”.
a. Trigger voltage
a. Conduction angle
b. Breakover voltage
b. Firing delay angle
c. Barrier voltage
c. Right angle c. 12.7 V

d. Off angle d. 14 V

108. Thyristors are most often used as 113. The three terminal semiconductor device that
acts in either direction.
a. Switches
a. Triac
b. Amplifiers
b. SCR
c. Buffers
c. Diac
d. Decoders
d. SCS

109. The total internal series resistance of the UJT.

114. The P of PUT stands for
a. Bulk’s resistance
a. Programmable
b. Total resistance
b. Performance
c. Interbase resistance
c. Peak
d. RIS
d. Post

110. The most popular and typical breakover

voltage of a diac. 115. The terminals of a UJT are

a. 32 V a. Gate, Anode, Cathode

b. 16 V b. Anode, Cathode

c. 8 V c. Emitter, Base

d. 4 V d. Emitter, Base1, Base2

111. The peak voltage of a PUT is 116. The lowest current that can prevent the
transition of a UJT from conduction to blocking
a. VD + VBB region.

b. VG + VBB a. Switching current

c. VD + VG b. Emitter current

d. VBB c. Valley current

d. Peak current

112. A UJT has η = 0.65 and is connected to a 20 V

supply. What is its VEB1?
117. The SCS has how many gate terminals?
a. 12 V
a. 0
b. 13.6 V
b. 1
c. 2 a. Thyratrons

d. 3 b. Ignitrons

c. SCR

118. What device has two terminals connected in d. Triac

inverse-parallel that pass in two directions?

a. Triac
123. Group of devices with 4 or more
b. Diac semiconductor layers.

c. Shockley a. Transistors

d. SCR b. Diodes

c. Thyristors

119. What is the breakover voltage of a PUT if it is d. Op-Amps

connected to a 15 V supply across the gate
terminal?

a. 10.7 V 124. Identify which of the following is a three layer

device.
b. 23.7 V
a. SCS
c. 15.7 V
b. Diac
d. 5.3 V
c. Triac

d. PUT
120. The gap between the forward blocking region
and the forward conduction region.

a. Band gap 125. What device can be modeled by a diode and

two resistors?
b. Switching region
a. BJT
c. Jump gap
b. DIAC
d. Negative resistance region
c. SCR

d. UJT
121. The cathode of the PUT is the counterpart of
which terminal in UJT?

a. Anode 126. A junction that is formed by adding controlled

amounts of an impurity to the melt during crystal
b. Base2 growth is termed as

c. Emitter a. Fused junction

d. Base1 b. Unijunction

c. Alloy junction

122. An electronic switch that has the highest single d. Doped junction
device current capacity and can withstand overloads
better.
127. A triac is a ________. 132. A two-terminal, unidirectional thyristor.

a. 2 terminal switch a. DIAC

b. 2 terminal bilateral switch b. Shockley

c. 3 terminal unilateral switch c. TRIAC

d. 3 terminal bidirectional switch d. Diode

128. A thyristor equivalent of a thyratron tube is 133. A thyristor is basically __________.

________.
a. PNPN device
a. Diac
b. A combination of diac and triac
b. Triac
c. A set of SCRs
c. SCR
d. A set of SCR, diac and triac
d. PUT

134. What is the PNPN device with two gates?

129. Which of the following describes a triac?
a. Diac
a. Conducts when not triggered
b. Triac
b. Conducts when not triggered in both directions
c. SUS
c. Conducts when triggered in one direction
d. SCS
d. Conducts when triggered in both direction

135. Which device incorporates a terminal for

130. Minimum anode current to hold a thyristor at synchronizing purposes?
conduction.
a. Diac
a. Trigger
b. Triac
b. Maintaining current
c. SUS
c. Holding current
d. SCR
d. Threshold voltage

136. An SCR is a _________.

131. General term for semiconductor devices
primarily used as switches. a. Unijunction device

a. Shockley b. Device with three junctions

b. Thyratron c. Device with four junctions

c. Thyristor d. Device with two junctions

d. Relay

137. A thyristor can be turned off

a. By reducing the anode current below the holding
current value
142. It is the minimum anode current to hold a
b. By reversing the anode voltage thyristor at conduction.

c. Either a or b a. Trigger

d. Both a and b b. Maintaining current

c. Holding current

138. Minimum duration of pulse triggering system d. Threshold voltage

for thyristors is ________.

a. At least 10 microseconds
143. Electron tube containing mercury functioning
b. At least 30 milliseconds as a rectifier.

c. At least 10 milliseconds a. Thyratron

d. At least 1 second b. Ignitron

c. Thyrector

139. A device that cannot be triggered by voltage of d. SCR

either polarity is ________.

a. Diac
144. How do you stop the conduction during which
b. Triac the SCR is also conducting?

c. SCS a. Remove voltage gate

d. All of the above b. Increase cathode voltage

c. Interrupt anode current

140. Technically, what is dicing means? d. Reduce gate current

a. Process of joining two diacs

b. Circuit of reducing noise 145. A series RC connected in parallel with an SCR

to eliminate false triggering is the _______.
c. Device for reducing magnetic and radio
interference a. Crowbar

d. Process of breaking the silicon slice into chips b. Snubber

c. Varistor

141. The term used to describe the process whereby d. Eliminator

two transistors with positive feedback are used to
simulate the action of the thyristor.

a. Arcing 146. Which are the three terminals of a TRIAC?

b. Latching a. Gate, anode1 and anode2

c. Damping b. Gate, source and sink

d. Switching c. Base, emitter and collector

d. Emitter, base1 and base2 b. Varactor

c. Thyrector

147. The term used to describe the process whereby d. Phanatron

two transistors with positive feedback are used to
simulate the action of the thyristor.

a. Arcing 152. Refers to the number of degrees of an AC

cycle during which the SCR is turned on.
b. Latching
a. Conduction angle
c. Damping
b. Firing delay angle
d. Switching
c. Induction angle

d. ON angle
148. The minimum emitter to base voltage to trigger
the UJT is the ________.

a. Forward breakover voltage 153. A four-element solid state device that

combines the characteristics of a both diodes and
b. Trigger transistors.

c. Breakdown voltage a. Varactor

d. Peak voltage b. Zener diode

c. Tunnel diode

149. The ratio of the emitter to base1 resistance to d. SCR

the interbase resistance of a UJT is called
________.

a. Aspect ratio 154. Electron tube equivalent to solid state SCR.

b. Current gain a. Triode

c. Voltage gain b. VTVM

d. Intrinsic standoff ratio c. CRT

d. Thyratron

150. For a UJT, it is the region between the peak

and valley points as seen in its characteristics curve.
155. Find the two stable operating conditions of an
a. Active region SCR.

b. Negative resistance region a. Conducting and non-conducting

c. Trigger region b. Oscillating and quiescent

d. Saturation region c. NPN conduction and PNP conduction

151. This device is two zener diodes connected d. Forward conducting and reverse conducting
back to back in series and is used to support voltage
surges and transients.

a. Thyristor 156. How do you stop conduction during which

SCR is also conducting?
a. Remove voltage gate

b. Increase cathode voltage 161. A two-terminal, bidirectional thyristor.

c. Interrupt anode current a. DIAC

d. Reduce gate current b. Shockley

c. TRIAC

157. When an SCR is triggered or on conducting, its d. Diode

electrical characteristics are similar to what other
solid-state device (as measured between its cathode
and anode)?
162. A DIAC is equivalent to inverse parallel
a. The junction diode combination of

b. The varactor diode a. Shockley diodes

c. The tunnel diode b. Schottky

d. The hotcarrier diode c. BJT

d. SCR’s

158. Which of the following does not have a base

terminal?
163. A TRIAC is equivalent to inverse parallel
a. UJT combination of

b. PNP a. Shockley

c. SCR b. Schottky

d. NPN c. BJT

d. SCR’s

159. A series RC circuit that is connected in parallel

with an SCR to eliminate false triggering.
164. Which are the three terminals of a TRIAC?
a. Crowbar
a. Gate, anode1 and anode2
b. Snubber
b. Gate, source and sink
c. Varistor
c. Base, emitter and collector
d. Eliminator
d. Emitter, base1 and base2

160. A circuit that protects a sensitive circuit from a

sudden increase in supply voltage. 165. Which device can be modeled by a diode and
two resistors?
a. Crowbar
a. BJT
b. Snubber
b. DIAC
c. Varistor
c. SCR
d. Eliminator
d. UJT
166. The minimum emitter to base 1 voltage to 171. The region where breakover voltage of the
trigger the UJT. SBS drops to 1 V instantaneously.

a. Forward breakover voltage a. Falldown region

b. Trigger b. Fallback region

c. Breakdown voltage c. Breakback region

d. Peak voltage d. Breakdown region

167. The ratio of the emitter to base1 resistance to 172. The ratio of RB1 and RBB is called
the interbase resistance of a UJT.
a. Intrinsic standoff ratio
a. Aspect ratio
b. Reuber’s ratio
b. Current gain
c. Common mode rejection ratio
c. Voltage gain
d. Cat’s ratio
d. Intrinsic standoff ratio

173. The time between the first application of

168. For UJT, it is the region between the peak and electrode force and the first application of welding
valley points. current.

a. Active region a. Squeeze time

b. Negative resistance region b. Weld time

c. Trigger region c. Hold time

d. Saturation region d. Off period

169. Typical breakover voltage of an SBS. 174. Process wherein coalescence is produced by
the heat obtained from the resistance of the
a. 2 V workpiece to the flow of low voltage, high density
electric current in a circuit.
b. 4 V
a. Forge welding
c. 8 V
b. Resistance welding
d. 16 V
c. Ultrasonic welding

d. LBW
170. The trigger current is applied to the…

a. Anode
175. Time when electrode force is applied but the
b. Gate current is shut off.

c. Cathode a. Off period

d. Base b. Hold time

c. Squeeze time c. Mechanical system

d. Weld time d. None of the above

176. The time when electrode force is released. 181. Resistance spot welding (RSW) machine type
that is controlled by hydraulic cylinders.
a. Hold time
a. Miniature welders
b. Squeeze time
b. Rocker-arm welder
c. Off period
c. Press-type welder
d. Weld time
d. Portable spot welder

177. The fusion of the grain structure of materials.

182. Machine component made up of the
a. Forge transformer and the current regulator.

b. Weld a. Control system

c. Recombination b. Electrical system

d. Coalescence c. Electrode system

d. Mechanical system

178. Time when current is applied to the workpiece.

a. Weld time 183. Welder machine with capacities up to 500 kVa

b. Squeeze time a. Miniature welders

c. Hold time b. Rocker-arm welder

d. Off period c. Press-type welder

d. Portable spot welder

179. Heat in resistance welding is produced by the

following factors except one
184. Regulates the time of the welding cycle.
a. Time duration
a. Electrode
b. Current
b. Current regulator
c. Electrical resistance
c. Control system
d. Pressure applied
d. Mechanical system

180. Resistance welding machine component that

holds the workpieces. 185. Welding machine use for large workpieces.

a. Electrical circuit a. Miniature welders

b. Electrode system b. Rocker-arm welder

c. Press-type welder d. Rafts

d. Portable spot welder

191. The last step in welding time control.

186. Another name for hammer welding a. Off period

a. Fusion welding b. Weld time

b. RW c. Squeeze time

c. Maul welding d. Hold time

d. Forge welding

192. The relative maximum workpiece thickness

where spot welding can be used.
187. Referred to as a localized coalescence
a. 0.5 in
a. Weld
b. 1 in.
b. Mold
c. 1.5 in.
c. Cast
d. 0.25 in.
d. Metal

193. Resistance welding was developed by this man

188. Part of the welding electric circuit that is used in and revolutionized the welding industry.
to produce high amperage current at low voltages.
a. Isaac Asimov
a. Capacitor
b. Karel Capek
b. Voltage regulator
c. Thomas Seebeck
c. Transformer
d. Elihu Thomson
d. The secondary circuit

194. The year when resistance welding was

189. The overlapped RSW. discovered.

a. RSEW (Resistance Seam Welding) a. 1935

b. ORSW b. 1798

c. OSW c. 1886

d. USW d. 1945

190. Spot welding are most commonly used in 195. It is the fusion or growing of the materials
being together.
a. Ships
a. Coalition
b. Automobiles
b. Coincidence
c. Airplanes
c. Coalescense a. 0.5 V

d. Mixing b. 0.1 V

c. 1 V

196. Arc welding requires a voltage around d. 5 V

_________.

a. 60 – 100 V
201. For an SCR, dv/dt protection is achieved
b. 150 -200 V through the use of:</>

c. 400 – 440 V A. RL in series with SCR

d. 1000 – 5000 V B. RC across SCR

C. L in series with SCR

197. During arc welding, the current is in the range D. RC in series with SCR
of _________.

a. 1 – 5 A
202. A technique use to turn off a thyristor using an
b. 5 – 50 A external circuit which causes the anode to become
negatively biased.
c. 50 – 400 A
A. force commutation
d. 500 – 4000 A
B. reverse triggering

C. negative feedback
198. The body structure of the car is welded by
_________. D. doping

a. Gas welding

b. Spot welding 203. The turn-off time of thyristor is 30 m sec at

50°C. Its turn-off time at 100° is
c. Induction welding
A. same
d. Arc welding
B. 15 m sec

C. 60 m sec
199. For inspection of welding defects in thick
metals, which of the following ray is used to D. 100 m sec
photograph thick metals objects?

a. Gamma rays
204. The peak and valley currents of the PUT are
b. Cosmic rays typically ___________ those of a similarly rated
UJT.
c. Infrared rays
A. lower than
d. Ultraviolet rays
B. the same as

C. higher than
200. The voltage across an SCR when it is turned
on is about D. None of the above
 C. a programmable oscillator

205. What is a solid state equivalent of a gas filled D. an amplifier

triode?

A. Triac
210. Determine RB1 for a silicon PUT if it is
B. Thyristor determined that h = 0.84, VP = 11.2 V, and RB2 = 5
kΩ.
C. SCR
A. 12.65 kΩ
D. SCS
B. 16.25 kΩ

C. 20.00 kΩ
206. The method(s) for turning off an SCR is (are)
categorized as ___________. D. 26.25 kΩ

A. current interruption

B. forced commutation 211. Which of the following devices does not have
a cathode terminal?
C. both current interruption and forced
commutation A. SCR

D. None of the above B. SCS

C. TRIAC

207. In a certain UJT rB1 is 2.5 kΩ and rB2 = 4 kΩ. D. Shockley diode
What is the intrinsic standoff ratio?

A. 0.61538
212. The UJT operates in what region after peak
B. 0.38461 point?

C. 2.6 A. Cut off

D. 0.8125 B. Negative resistance

C. Saturation

208. When SCR starts conducting, then D. Positive resistance

__________ losses all control.

A. gate
213. What is basically a two-terminal parallel-
B. anode inverse combination of semiconductor layers that
permits triggering in either direction?
C. cathode
A. DIAC
D. anode supply
B. TRIAC

C. QUADRAC
209. You have the schematic diagram of several
types of circuits. Which of these circuits most likely D. Shockley Diode
uses a triac?

A. an oscillator
214. Which device does not have a gate terminal?
B. an ac motor control
A. Triac

B. SCR 219. It is the minimum additional current that can

make up for any missing input (gate) current in
C. FET order to keep the device ON.

D. Diac A. leakage current

B. ac current

215. The four-layer devices with a control C. holding current

mechanism are commonly referred to as
___________. D. switching current

A. thyristors

B. transistors 220. The PUT (programmable unijunction

transistor) is actually a type of:
C. diodes
A. UJT thyristor
D. None of the above
B. FET device

C. TRIAC
216. What is that voltage above when the SCR
enters the conduction region? D. SCR

A. Reverse breakover voltage

B. Forward breakover voltage 221. What is the typical value of the interbase
resistance of UJTs?
C. Holding voltage
A. 20 KΩ
D. Trigger voltage
B. Between 4 to 4 KΩ

C. 4 KΩ
217. It is a three-terminal silicon diode with the
ability to control a large ac power with a small D. Between 4 to 10 KΩ
signal.

A. TRIAC
222. Which of the following is a four-layer diode
B. SCR with an anode gate and a cathode gate?

C. UJT A. SCS

D. SCS B. SCR

C. SBS

218. The smallest amount of current that the D. SUS

cathode-anode can have, and still sustain
conduction of an SCR is called the:

A. maximum forward current 223. SCR is a rectifier constructed of silicon

material. Silicon is chosen because
B. maximum forward gate current
A. it is the most abundant material
C. holding current
B. of its strength and ruggedness
D. reverse gate leakage current
C. it is much cheaper than any other material B. About 50 kHz

D. of its high temperature and power capabilities C. About 250 kHz

D. About 1 mHz

224. When the temperature increases, the intrinsic

standoff ratio
229. The minimum operating voltage of the UJT is
A. increases typically ____________ that of a similarly rated
PUT.
B. decreases
A. lower than
C. essentially constant
B. the same as
D. becomes zero
C. higher than

D. None of the above

225. SCRs have been designed to control powers as
high as ___________, with individual ratings as
high as ___________ at __________.
230. A UJT is sometimes called a ___________
A. 1800 MW, 10 A, 2000 V diode.

B. 1800 MW, 2000 A, 10 V A. double-based

C. 10 MW, 2000 A, 1800 V B. single-based

D. 2000 MW, 10 A, 1800 V C. a rectifier

D. a switching diode

226. An SCR is a member of what family?

A. Thyrector 231. It is like a low current SCR with two gate

terminals.
B. Thyratron
A. UJT
C. Thyristor
B. PUT
D. Transistor
C. SCR

D. SCS
227. Which of the following can change the angle
of conduction in SCR?

A. Changing anode voltage 232. What is the typical value of the reverse
resistance of SCRs?
B. Changing gate voltage
A. 1 Ω to 10 Ω
C. Reverse biasing the gate
B. 100 Ω to 1 kΩ
D. Changing cathode voltage
C. 1 kΩ to 50 kΩ

D. 100 kΩ or more
228. What is the frequency range of application of
SCRs?

A. About 10 kHz
233. Which of the following is the normal way to
turn on a diac?
238. Which of the following conditions is necessary
A. By breakover voltage for triggering system for thyristors?

B. By gate voltage A. It should be synchronized with the main supply

C. By gate current B. It must use separate power supply

D. By anode current C. It should provide a train of pulses

D. None of these

234. In a SCR circuit, the angle of conduction can

be changed by changing
239. A normally operated SCR has an anode which
A. anode voltage is ___________ with respect to cathode.

B. anode current A. negative

C. forward current rating B. positive

D. gate current C. at zero potential

D. at infinite potential

235. The function of snubber circuit connected

across the SCR is to:
240. Which of the following devices has (have) four
A. Suppress dv/dt layers of semiconductor materials?

B. Increase dv/dt A. Silicon-controlled switch (SCS)

C. Decrease dv/dt B. Gate turn-off switch (GTO)

D. Decrease di/dt C. Light-activated silicon-controlled rectifier

(LASCR)

D. All of the above

236. An SCR is made of what material?

A. Silicon
241. How many pn junction does SCRs have?
B. Carbon
A. Two
C. Germanium
B. Four
D. Gallium-arsenide
C. Three

D. Five
237. The SCR can exercise control over
____________ of ac supply.

A. positive or negative half-cycle 242. The silicon-controlled switch (SCS) is similar

in construction to the
B. both positive and negative half-cycles
A. triac.
C. only positive half-cycle
B. diac.
D. only negative half-cycle
C. SCR.
D. 4-layer diode. B. 1000 KHz

C. Frequencies less than 10 Hz

243. Which of the following devices has nearly the D. 60 Hz frequency

same turn-on time as turn-off time?

A. SCR
248. To turn on the UJT, the forward bias on emitter
B. GTO diode should be __________ the peak point voltage.

C. SCS A. more than

D. LASCR B. less than

C. equal to

244. Which of the following is (are) the advantages D. twice

of the SCS over a corresponding SCR?

A. Reduced turn-off time

249. What is the resistance of a certain 4-layer
B. Increased control and triggering sensitivity diode in the forward-blocking region if VAK = 15 V
and IA = 1 uA
C. More predictable firing situation
A. 15 Ω
D. All of the above
B. 21.21 MΩ

C. 15 M Ω
245. An effect that reduces the possibility of
accidental triggering of the SCS. D. 10.61 MΩ

A. Miller effect

B. Rate effect 250. What is the peak-point voltage for the UJT in
problem 76 if VBB = 15 V?
C. End effect
A. 10.605
D. Flywheel effect
B. 5.76912

C. 6.46915
246. An SCR whose state is controlled by the light
falling upon a silicon semiconductor layer of the D. 0.8125
device.
251. The SCR is turned-off when the anode current
A. SCS falls below

B. GTO A. forward current rating

C. Thyristor B. breakover voltage

D. LASCR C. holding current

D. latching current

247. Power electronics deals with the control of ac

power at what frequencies essentially?
252. When an SCR is combined to a switch, it is
A. 20 KHz considered as a ________ switch.
A. bidirectional 257. The V-I characteristics for a triac in the first
and third quadrants are essentially identical to those
B. mechanical of ________ in the quotation.

C. unidirectional A. SCR

D. omnidirectional B. UJT

C. Transistor

253. The p-type emitter of a UJT is ________ D. SCS

doped

A. lightly
258. To turn off the SCR, which of the following is
B. moderately done?

C. heavily A. Reduce gate voltage to zero

D. not B. Reverse bias the gate

C. Reduce anode voltage to zero

254. An SCR is a ___________ triggered device. D. Reduce cathode voltage to zero

A. current

B. power 259. Your boss has asked you to recommend a

thyristor that will enable you to turn it on with a
C. voltage pulse and also turn it off with a pulse. Which of the
following should you recommend?
D. noise
A. an SCR

B. an SCS
255. Anode current in a thyristor is made up of:
C. a PUT
A. Electrons only
D. a triac
B. Electrons or holes

C. Electrons and holes

260. The current from that semiconductor device
D. Holes only when it is reversed biased.

A. maximum forward current

256. Once a DIAC is conducting, the only way to B. maximum forward gate current
turn it off is with:
C. holding current
A. a positive gate voltage
D. leakage current
B. a negative gate voltage

C. low-current dropout
261. What is the range of the turn-on times in high-
D. breakover power SCR devices?

A. 30 µs to 100 µs

B. 10 µs to 25 µs
C. 5 µs to 8 µs A. breakover voltage

D. 1 µs to 5 µs B. gate current

C. gate voltage

262. You need to design a relaxation oscillator D. anode current

circuit. The most likely device to use might be

A. an SCR.
267. You have a light-dimmer circuit using an SCR.
B. a UJT. In testing the circuit, you find that IG = 0 mA and
the light is still on. You conclude that the trouble
C. a triac. might be one of the following:

D. a 4-layer diode. A. the SCR is open.

B. the switch is faulty.

263. The ___________ can be externally C. the gate circuit is shorted.

programmed to turn on at a desired anode-to-gate
voltage level. D. this is normal; nothing is wrong.

A. UJT

B. PUT 268. Which equation defines the intrinsic standoff

ratio (η) of UJTs?
C. SCR
A. RB1 / (RB1 + RB2)
D. SCS
B. (RB1 + RB2) / RB1

C. (RB1 + RB2) / RB2

264. It is the minimum current which must pass
through a circuit in order for it to remain in the D. RB1 + RB2
‘ON’ state.

A. leakage current
269. The voltage across an SCR when it is turned
B. ac current on is about

C. holding current A. 0.5 V

D. switching current B. 0.1 V

C. 1 V

265. What is that value of current below which the D. 5 V

SCR switches from the conduction state to the
forward blocking region under stated conditions?

A. Holding current 270. The typical turn-off time of an SCR is about

B. Forward current A. 20 to 40 μs

C. Reverse current B. 5 to 40 μs

D. Trigger current C. 1 to 5 μs

D. 15 to 25 μs

266. A diac is turned on by

271. Which of the following devices has the
smallest turn-off time?
276. An SCR is a solid state equivalent of which
A. SCR tube?

B. GTO A. Triode

C. SCS B. Gas-filled triode

D. LASCR C. Pentode

D. Tetrode

272. A triac is equivalent to two SCRs

A. in parallel 277. What is the typical turn-on time of an SCR?

B. in inverse-parallel A. 1 μs

C. in series B. 5 μs

D. in inverse-series C. 10 μs

D. 3 μs

273. It is the phase angle relative to the power line

at which point the gate is fired to commit the anode
to conduct to the cathode 278. An SCR is a solid state equivalent of which
tube?
A. right angle
A. Triode
B. reverse angle
B. Gas-filled triode
C. conduction angle
C. Pentode
D. firing angle
D. Tetrode

274. It is the total resistance of the silicon bar from

one end to another with emitter terminal open. 279. It is a special type of thyristor, which is a high-
power semiconductor device but are fully
A. gate resistance controllable switches which can be turned on and
off by their third lead.
B. base resistance
A. PUT
C. emitter resistance
B. MCT
D. interbase resistance
C. SCS

D. GTO
275. Holding current of a thyristor is:

A. Less than latching current

280. When the temperature increases, the inter-base
B. More than latching current resistance of a UJT

C. Equal to latching current A. Remains unchanged

D. Zero B. Increases
C. Decreases A. a rectifier and resistance

D. is zero B. a rectifier and capacitor

C. a rectifier and transistor

281. When checking a good SCR or TRIAC with an D. a rectifier and inductor
ohmmeter it will:

A. show high resistance in both directions

286. It is voltage-controlled fully controllable
B. show low resistance with positive on anode and thyristor similar in operation with GTO but it has a
negative on cathode, and high resistance when voltage controlled insulated gate.
reversed
A. PUT
C. show high resistance with negative on anode and
positive on cathode, and low resistance when B. MCT
reversed
C. UJT
D. show low resistance in both directions
D. MGT

282. The UJT may be used as

287. The three terminals of a triac are
A. an amplifier
A. drain, source, gate
B. a rectifier
B. two main terminals and a gate terminal
C. a sawtooth generator
C. cathode, anode and gate
D. a multivibrator
D. anode, source, gate

283. A resistor connected across the gate and

cathode of an SCR in a circuit increases its 288. A triac can pass a portion of __________ half
cycle through the load
A. dv/dt rating
A. only positive
B. Holding current
B. only negative
C. Noise Immunity
C. both positive and negative
D. Turn-off time
D. neither positive nor negative

284. AC power in a load can be controlled by

connecting 289. When the SCR is OFF, the current in the
circuit is
A. two SCRs in series
A. exactly zero
B. two SCRs in parallel
B. large leakage current
C. two SCRs in parallel opposition
C. small leakage current
D. two SCRs in series opposition
D. thermal current

285. An SCR combines the feature of

290. What is a three terminal device used to control D. SCS
large current to a load?

A. SCR
295. An SCR is made of silicon and not germanium
B. SCS because silicon.

C. GTO A. is inexpensive

D. Thyristor B. has low leakage current

C. is mechanically strong

291. What Greek word which means “switch”? D. is tetravalent

A. Ristor

B. Trans 296. The triac is fundamentally a/an ____________

with a gate terminal for controlling the turn-on
C. Thy conditions of the bilateral device in either direction.

D. Thyristor A. SCR

B. Quadric

292. The ____________ can conduct current in C. Shockley Diode

either direction and is turned on when a breakover
voltage is exceeded. D. Diac

A. SCR

B. Diac 297. An opto-isolator contains ___________.

C. SCS A. an infrared LED

D. Triac B. a photodetector

C. both an infrared LED and a photodetector

293. A resistor connected across the gate and D. None of the above
cathode of an SCR increases its:

A. Turn off time

298. Which of the following devices is
B. Holding current unquestionably of the greatest interest today?

C. Noise immunity A. SCR

D. dv/dt rating B. GTO

D. LASCR

294. Like an SCR, it is also a four layer device but D. SCS

with a gate connected to the N-region adjacent to
the anode.

A. TRIAC 299. In a UJT maximum value of charging

resistance is associated with:
B. PUT
A. Peak point
C. DIAC
B. Valley point
C. Any point between peak and valley point A. tapped inductor

D. After the valley point B. saturable reactor

C. auto transformer

300. When the firing angle of SCR is increased, its D. LVDT

output

A. decreases
305. A saturable reactor with regenerative feedback.
B. increases
A. tapped inductor
C. remains unchanged
B. auto transformer
D. doubles
C. LVDT
301. One type of circuit control device which may
be manual, automatic or multi-contact D. magnetic amplifier

A. fuse

B. breaker 6. Thyratrons in industrial electronics refers to

____________.
C. switch
A. a gas-filled diode
D. relay
B. a vacuum tube

C. gas-filled triode
302. What are the primary methods of controlling
electrical power? D. an electron triode

A. by using manual switches and rheostats

B. by using variable reactance and transformers 307. An electronic switch that has the highest
single-device current capacity and can withstand
C. by using electronic switches, such as diodes, overloads better.
transistors thyratrons, and thyristors
A. Thyristors
D. all of the above
B. ignitrons

C. SCR
303. Common method(s) of controlling electrical
power with reactance D. triac

A. switching a tapped inductor

B. using a saturable reactor 308. A semiconductor, electronic switch that has the
highest single-device current rating
C. by a matching transformer
A. thyristor
D. A and B above
B. triac

C. SCR
304. A reactive device used in controlling electrical
power by using two windings on a common iron D. Quadric
core. The control winding is supplied with small dc-
current which causes the reactance of large ac-
winding to change accordingly.
309. The purpose of installing thyrectors across the B. two terminal bi-directional switch
incoming power lines to the speed control system is
to ___________. C. two terminal unidirectional switch

A. cause the motor to caution D. three terminal bi-directional switch

B. protect drive circuits from high voltage transient

surges
314. Which of the trigger diodes has the highest
C. increase the counter emf holding voltage?

D. allow the field winding current to continue A. bidirectional-trigger diac

flowing
B. bidirectional-diode-thyristor diac

C. Shockley diode
310. Semiconductor devices equivalent to
thyratrons are generally called D. thyrector

A. thyrector

B. thyristor 315. General term of electronic devices used to

control or trigger large-power switching devices.
C. diac
A. thyristor
D. ignitron
B. thyrector

C. break-over devices
11. Using electronic devices as switches, what
is(are) the general methods of controlling electrical D. triggering devices
power?

A. phase control
316. A break-over device that is basically a diode.
B. zero-voltage switching
A. thyristor
C. static switching
B. thyrector
D. all of the above
C. thyratron

D. triggering diode
312. Which power control switching method that
greatly generates RFI or EMI and is therefore
limited to low-frequency applications?
317. A four-element solid state device that
A. phase control combi9nes the characteristics of both diodes and
transistors
B. zero-voltage switching
A. varactor
C. inverter control
B. zener diode
D. static switching
C. tunnel diode

D. SCR
313. One of the electronic semiconductor devices
known as diac, function as

A. four terminal multi-directional switch 318. The most popular thyristor used in electrical
power controllers
A. SCR C. A small holding voltage at the gate is required
for a continuous conduction.
B. triac
D. B and C above
C. SCS

D. PUT
323. The voltage across the anode (A) and cathode
(K) terminals of an SCR when conducting.

319. Find the two stable operating conditions of an A. holding voltage

SCR.
B. breakdown voltage
A. Conducting and non-conducting
C. breakback voltage
B. Oscillating and quiescent
D. trigger voltage
C. NPN conduction and PNP conduction

D. Forward conducting and reverse conducting

324. The minimum amount of current needed for an
SCR to conduct continuously.

320. How do you stop conduction during which A. holding current

SCR is also conducting?
B. triggering current
A. remove voltage gate
C. threshold current
B. increase cathode voltage
D. average sustaining current
C. interrupt anode current

D. reduce gate current

325. What is(are) the condition(s) in triggering
SCR?

321. How do we turn “ON” or trigger an SCR? A. The gate voltage must be equal to or greater than
the triggering voltage.
A. by making the gate (G) positive with respect to
its cathode (K) B. The gate current must be equal to or greater than
the triggering current.
B. by making the gate (G) positive with respect to
its anode (A) C. The anode (A) must be positive with respect to
the cathode.
C. by making the cathode more positive with
respect to the anode D. all of the above

D. A and C above

326. The voltage decreased across the anode (A)

and cathode (K) of an SCR from non-conducting
322. What is true about SCRs after they are being state to conducting state.
switched “ON”?
A. holding voltage
A. The anode (A) to cathode (K) continues to
conduct even if the gate triggering voltage is B. forward breakdown voltage
removed.
C. triggering voltage
B. The gate (G) must be provided with the required
holding current to continue its conduction. D. breakback voltage
327. An SCR rated 10 A is used as the controlling
switch in a circuit powered by 50Vdc. When the
SCR fires ON, its anode (A) to cathode (K) voltage
was observed to be 2 V. Calculate the breakback
voltage of the SCR.
A. 25 Vdc
B. 32 Vdc
C. 41 Vdc
D. 48 Vdc
328. The needed voltage at the gate of an SCR
before it conducts.
A. minimum-gate trigger voltage
B. maximum-gate trigger voltage
C. minimum-gate peak-inverse voltage
D. maximum-gate peak-inverse voltage
329. What is(are) the gate limitation(s) of SCRs and
triacs?
A. maximum-gate power dissipation
B. maximum-gate peak-inverse voltage
C. maximum-gate trigger current and voltage
D. all of the above
330. How can we extend the rating of SCRs?
A. by external cooling
B. by external circuitry
C. by connecting them in series/parallel
D. all of the above
331. Use of heat sinks, forced air, and water cooling
are examples of external cooling in SCRs and other
devices. Which of these is the only recommended to
be used for the largest power dissipating device?
A. metal heat sinks
B. forced air
C. water cooling
D. A and B above
332. How can we increase the forward-voltage
blocking capability of SCRs?
A. by connecting them in series
B. by connecting them in parallel
C. by cascading them
D. by connecting back to back in parallel
333. In connecting two SCRs in series, during
“OFF” state, the voltage source must be properly
shared between them, but due to devices’
differences, there might be unequal voltages across
each SCR. How do we equalize these voltages?
A. by installing a snubber circuit
B. by adding a gate-to-cathode resistor
C. by shunting a capacitor across the anode (A) and
cathode (K) of each SCR
D. by using a blocking-equalizing resistor
334. What is true regarding blocking-equalizing
resistors in SCRs connected in series?
A. Blocking-equalizing resistors are shunted across
each SCR.
B. The value of these resistors is about 10% of the
value of the blocking resistance of the SCR it is
shunted with.
C. These resistors increases the leakage current
towards the load.
D. All of the above
335. A circuit used for voltage equalization during
ON-OFF switching action of SCRs in series.
A. snubber circuit
B. crow-bar
C. clipper
D. clamper
336. When a high current is needed, SCRs are
connected in parallel. The problem with paralleled
SCRs is, when they are not perfectly matched, one
will conduct first before the other and carries the
full-load current that is for sure greater than its
maximum rating. To avoid this situation, both SCRs
should be turned ON at the same time. How can we
do this?
A. by using high triggering gate voltage
B. by using a gate-triggering transformer
C. by using reactors
D. all of the above are possible
337. In controlling electrical power using phase
control method with SCR/triac being the active
device, what do we call the period of the cycle
before the device switches to conduction?
A. trigger time
B. trigger delay time
C. firing frequency
D. firing delay angle
338. How many times per second does an SCR is
turned ON and OFF when it is operated in a full-
wave phase control at a line frequency of 60 Hz?
A. 30 times
B. 60 times (HV)
C. 90 times
D. 120 times (FW)
339. A three terminal device that behaves roughly
like SCR, except that it can conduct current in either
direction when at ON.
A. thyristor
B. SUS
C. SBS
D. GTO
340. What is the difference between a triac and a
silicon bilateral switch (SBS)?
A. An SBS is usually used as breakover device,
while a triac is a load controlling device.
B. An SBS is for low voltage applications, while a
triac is generally for high voltage applications.
C. An SBS has better and stable symmetrical-firing
voltage than a triac.
D. all of the above
341. A triac can be triggered ON by the application
of a
A. positive voltage at the gate with respect to MT1
B. negative voltage at the gate with respect to MT1
C. positive or negative gate voltage with respect to
MT2
D. all of the above are correct
342. Which are the three terminals of a TRIAC?
A. Gate, anode 1 and anode 2
B. Gate, source and sink
C. Base, emitter and collector
D. Emitter, base 1 and base 2
343. What are the three terminals of a triac?
A. anode 1 (A1), anode 2 (A2) and gate (G)
B. mainterminal 1 (MT1), mainterminal 2 (MT2),
and gate (G)
C. anode (A), cathode (K) and gate (G)
D. both A and B are acceptable
344. A silicon bilateral switch may be considered as
s small power triac, and has three terminals namely,
A. anode 1 (A1), anode 2 (A2) and gate (G) 348. Thyristor whose characteristic curve closely
resembles that of SCR’s and SUS’s, except that its
B. mainterminal 1 (MT1), mainterminal 2 (MT2), forward breakover voltage (+VBO) is not alterable,
and gate (G) for the device has no gate terminal.

C. anode (A), cathode (K) and gate (G) A. diac

D. both A and B are acceptable B. thyrector

C. UJT

345. A thyristor that is very similar to an SCR D. Shockley diode

except that it has low voltage and current ratings. It
is very temperature stable, and is therefore suitable
to be used as triggering
349. What will happen to the forward breakdown or
device. breakover voltage of SCRs and triacs if the gate
current is increased?
A. UJT
A. will decrease
B. GTO
B. will also increase
C. SBS
C. will not change
D. SUS
D. will either increase or decrease, it depends on
their current coefficient

346. Silicon unilateral switches (SUSs) generally

have a breakover voltage of 8 V, however, this
value can be altered by normally connecting a zener
diode. How is the diode installed?
A. across the gate (G) and cathode (K) terminals,
with the diode’s anode at the gate
B. anode to anode, cathode to cathode
350. A UJT or unijunction transistor is a three
terminal breakover-type switching device. Its three
terminals are called base 1, base 2, and emitter.
Though this is a transistor and has base and emitter
terminals, this operates very different from a BJT
and is not used as a linear amplifier. Its applications
are for

C. diode’s cathode to SUS’s anode and diode’s A. timers and oscillators

anode to SUS’s cathode
B. signal generators
D. diode’s cathode to SUS’s gate and diode’s anode
to SUS’s cathode C. triggering control for SCRs and triacs

D. all of the above

347. A silicon unilateral switch (SUS) has a forward

breakover voltage of 8 V. a zener diode is
connected between its gate and cathode terminals
with the diode’s cathode at SUS’s gate. If the zener
voltage is 3.9 V, what is the new forward breakover
voltage of the device?

A. 0.49 V

B. 2.05 V

C. 4.50 V

D. 11.9 V