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MBR1070CT - MBR10100CT

10A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER


SPICE MODEL: MBR10100CT

Features
· Schottky Barrier Chip
· Guard Ring Die Construction for
Transient Protection
TO-220AB
· Low Power Loss, High Efficiency L
Dim Min Max
· High Surge Capability B M
· High Current Capability and Low Forward A 14.22 15.88
C
Voltage Drop D B 9.65 10.67
· For Use in Low Voltage, High Frequency K C 2.54 3.43
Inverters, Free Wheeling, and Polarity A
D 5.84 6.86
Protection Applications
E ¾ 6.35
· Plastic Material: UL Flammability 1 2 3
Classification Rating 94V-0 E G 12.70 14.73

G H 2.29 2.79
Mechanical Data J N J 0.51 1.14

· Case: Molded Plastic K 3.53Æ 4.09Æ


· Terminals: Plated Leads Solderable per H H P L 3.56 4.83
MIL-STD-202, Method 208 M 1.14 1.40
Pin 1
· Polarity: As Marked on Body Pin 2 Case N 0.30 0.64
· Weight: 2.24 grams (approx) Pin 3
P 2.03 2.92
· Mounting Position: Any All Dimensions in mm
· Marking: Type Number

Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified


Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

Characteristic Symbol MBR MBR MBR MBR Unit


1070CT 1080CT 1090CT 10100CT
Peak Repetitive Reverse Voltage VRRM
Working Peak Reverse Voltage VRWM 70 80 90 100 V
DC Blocking Voltage VR
RMS Reverse Voltage VR(RMS) 49 56 63 70 V
Average Rectified Output Current
IO 10 A
(Note 1) @ TC = 100°C
Non-Repetitive Peak Forward Surge Current
8.3ms single half sine-wave superimposed on rated load IFSM 120 A
(JEDEC Method)
Forward Voltage Drop @ IF = 5.0A, TC = 125°C 0.75
@ IF = 5.0A, TC = 25°C VFM 0.85
0.85 V
@ IF = 10A, TC = 125°C
@ IF = 10A, TC = 25°C 0.95
Peak Reverse Current @ TC = 25°C IRM 0.1
50 mA
at Rated DC Blocking Voltage @ TC = 125°C
Typical Junction Capacitance (Note 2) Cj 300 pF
Typical Thermal Resistance Junction to Case (Note 1) RqJC 3.0 K/W
Voltage Rate of Change dV/dt 10,000 V/ms
Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C

Notes: 1. Thermal resistance junction to case mounted on heatsink.


2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

DS30028 Rev. A-2 1 of 2 MBR1070CT-MBR10100CT


www.diodes.com ã Diodes Incorporated
10 100

IF, INSTANTANEOUS FORWARD CURRENT (A)


I(AV), AVERAGE FWD CURRENT (A) 8

10
6

4
1.0

0 0.1
0 50 100 150 0 0.2 0.4 0.6 0.8 1.0

TC, CASE TEMPERATURE (°C) VF, INSTANTANEOUS FORWARD VOLTAGE (V)


Fig. 1 Forward Current Derating Curve Fig. 2 Typical Forward Characteristics

300 4000
IFSM, PEAK FORWARD SURGE CURRENT (A)

Tj = 25°C
f = 1.0MHz
250

200 Cj, CAPACITANCE (pF)


1000

150

100

50

0 100
1 10 100 0.1 1.0 10 100
NUMBER OF CYCLES AT 60Hz VR, REVERSE VOLTAGE (V)
Fig. 3 Max Non-Repetitive Surge Current Fig. 4 Typical Junction Capacitance

DS30028 Rev. A-2 2 of 2 MBR1070CT-MBR10100CT


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