Professional Documents
Culture Documents
Abstract
We have developed a-Si-based solar cells with plastic "lm substrate and achieved a stabilized
e$ciency of 9% in a 40 cm;80 cm cell. The structure and fabrication process of #exible solar
cells are presented. Then we discuss the merits and demerits of our process from the viewpoint
of mass production, and clarify that the SCAF cell has a good adaptability to mass produc-
tion. 2001 Elsevier Science B.V. All rights reserved.
Keywords: Amorphous silicon solar cell; Plastic "lm substrate; Amorphous silicon germanium; Mass
production technology
1. Introduction
0927-0248/01/$ - see front matter 2001 Elsevier Science B.V. All rights reserved.
PII: S 0 9 2 7 - 0 2 4 8 ( 0 0 ) 0 0 1 6 3 - X
108 Y. Ichikawa et al. / Solar Energy Materials & Solar Cells 66 (2001) 107}115
What we tried was to "nd a new breakthrough technology for low-cost mass
production with plastic "lm substrates. We have succeeded in developing a new
monolithic structure named series-connection through apertures formed on "lm
(SCAF) as shown in Fig. 1 [1]. In this structure, a substrate-type a-Si : H-based solar
cell is fabricated on heat-resisting plastic "lms such as poly-imide.
The entire process for SCAF cell production is schematically shown in Fig. 2. To
complete the SCAF solar cell, we need only four processes, and all the apparatuses
used are based on roll-to-roll processes. First, holes are made on the plastic "lm by
a punching unit and then the substrate is cleaned by a cleaning unit in a pretreatment
apparatus. After that, the roll is transferred to a roll-to-roll sputtering apparatus to
deposit metal electrodes. Then the pretreated "lm-substrate roll is set in an apparatus
composed of plasma CVD reactors and sputtering reactors to deposit the a-Si layers,
the transparent electrode and back-side electrode. This apparatus is named stepping-
roll (SR) deposition apparatus and developed especially for the SCAF solar cells (see
Y. Ichikawa et al. / Solar Energy Materials & Solar Cells 66 (2001) 107}115 109
Ref. [2] for the details). Finally, the layers formed on both surfaces of the "lm are
laser-scribed to make unit cells by a roll-to-roll laser-scriber.
The fabrication process for the SCAF solar cell presented here is further simpli"ed
compared with that for the glass substrate solar cells. Moreover, since all the process
units are based on roll-to-roll systems, it is easy to construct an automated production
line with these processes.
110 Y. Ichikawa et al. / Solar Energy Materials & Solar Cells 66 (2001) 107}115
To brush up the developed process and improve the performance of SCAF cells, we
have carried out trial production of 40 cm;80 cm SCAF cells. The present SCAF cell
was designed to generate an optimum output voltage of about 200 V for the a-Si/a-Si
tandem structure; to generate this voltage, 152 unit cells were connected in series. The
reason for generating high voltages is to raise usability of the SCAF solar cell as well
as to avoid the joule loss due to high current. With this, we obtained a stabilized
aperture-area e$ciency of 8.1% in a 40 cm;80 cm SCAF solar cell.
For further improvement in e$ciency, we have applied a-SiGe alloy to the bottom
cell. To search an optimum fabrication condition for the bottom cell, we fabricated
substrate-type single-junction a-SiGe solar cells on Ag-coated Asahi U SnO glass
substrate. With these solar cells, we have optimized the "lm thickness, process
temperature, gas mixture ratio and so on for each layer. In the experiments, the optical
gap of the a-SiGe ith layer was kept at 1.5 eV, and its thickness was 120 nm.
As an example of the obtained data, the e!ect of hydrogen dilution of the raw
material gases on the stabilized e$ciency of the a-SiGe solar cells (1 cm) is shown in
Fig. 3. This "gure shows the photovoltaic characteristics of the a-SiGe single-junction
Y. Ichikawa et al. / Solar Energy Materials & Solar Cells 66 (2001) 107}115 111
Fig. 4. Initial and stabilized I}V curves of a-SiGe SCAF solar cell (40 cm;80 cm).
cells as a function of H /SiH ratio for ith layer deposition for the initial and after
light-soaking of 12 and 300 h. The gas #ow rate for GeH was adjusted to provide
a 1.5 eV material for each dilution condition. Though the initial e$ciency did not vary
in the range of H /SiH ratio from 10 to 40, the photo-degraded e$ciency increased
with increasing H /SiH ratio, and an e$ciency of 8.3% was obtained at an H /SiH
ratio of 40 after light-soaking.
The developed fabrication conditions were transferred to the deposition process for
the SR apparatus to fabricate a-Si/a-SiGe SCAF structure cells of 40 cm;80 cm. As
a result, we obtained a stabilized e$ciency of 9.0% with an initial e$ciency of 10.1%
in aperture-area as shown in Fig. 4. [3,4].
The reproducibility of the production process is one of the most important issues.
To con"rm that for the a-Si/a-SiGe SCAF cell, we carried out several trial produc-
tions. Fig. 5 shows an example of those results; it shows the initial performance of 23
a-Si/a-SiGe SCAF cells formed successively on a "lm roll under the same deposition
condition. From this result, it is demonstrated that our process has a very high
reproducibility.
The SCAF solar cell and the fabrication process for it are quite distinctive from
other a-Si-based solar cells as mentioned in the previous section. In this section, the
advantage of SCAF solar cell will be discussed with a view to the adaptability to the
future mass production.
112 Y. Ichikawa et al. / Solar Energy Materials & Solar Cells 66 (2001) 107}115
In developing the production technologies for a-Si-based solar cells, at least the
following items should be taken into account:
(1) Conversion e$ciency.
(2) Throughput.
(3) Production yield.
(3) Production yield: Production yield is an important key for the mass production
because the cost is in inverse proportion to the yield. We have to consider two kinds of
yield; one is related to the scatter in performance of fabricated solar cells, and the
other is related to the probability of trouble generation causing the process down, in
other words the durability of apparatuses. In the roll-to-roll process, the latter is
a serious problem once it occurs, because all the cells in a roll have to be thrown away,
and the yield is drastically decreased.
Here, we discuss the adaptability of our process to the future mass production with
regard to the three items discussed above.
(1) Conversion ezciency: To improve the e$ciency of mass-produced solar cells, the
technologies developed in laboratories should be easily applicable to the production
line. Our stepping-roll "lm deposition apparatus consisting of multi-reactors has both
the merit of a roll-to-roll machine and that of an in-line batch system. In principle, the
conventional roll-to-roll deposition apparatus has several problems. For instance,
isolation of raw material gases among reactors is not perfect in an in-line multi-
reactor system. As a result, interdi!usion of material gases is not avoidable, and
also the gas pressures and the deposition rates are not chosen for each reactor
independently. In addition, it is very di$cult to make band-pro"led ith layers or
graded gap bu!er layers. These di$culties form barriers to improvement in solar cell
e$ciency.
In the stepping-roll apparatus, on the other hand, each reactor is isolated from the
others during "lm depositions. Thus, deposition conditions developed in laboratories
are perfectly transferable to production lines.
(2) Throughput: To improve the throughput, roll-to-roll processes are very e!ective.
Since all the processes we developed are based on that, the throughput for each
process is essentially quite high. Among the processes, however, a barrier for the
future mass production of a-Si solar cells would be the a-Si "lm deposition process.
A general approach to raise the throughput is to increase the "lm deposition rate. It is,
however, commonly known that the stabilized e$ciency is lessened when the depos-
ition rate increases only twice or three times compared with the standard deposition
condition (0.1}0.2 nm/s); this is one of the major reasons for existing the discrepancy
between laboratory and production cells.
Another approach for improving that is to increase the number of plasma CVD
chambers. In the conventional in-line CVD apparatus for glass substrate, each
chamber has to be equipped with a mechanism for transporting substrates. On the
other hand, our apparatus requires no transportation system in each chamber,
because the "lm substrate is transported and controlled by a winder and an un-
winder placed at both ends of the apparatus. Thus, the cost of a plasma CVD chamber
is much lower than that of the others. Moreover, in the SR apparatus, extension
of apparatus is much easier than that of the conventional roll-to-roll apparatus
because the same chamber can be simply added to increase the number of CVD
reactors.
114 Y. Ichikawa et al. / Solar Energy Materials & Solar Cells 66 (2001) 107}115
4. Conclusions
We discussed the features of our SCAF solar cells from the viewpoint of mass
production. In this regard , we believe that the process for SCAF cells has an excellent
adaptability to mass production. Development of the production technologies is now
in the "nal stage, and we will complete it in a couple of years for high-e$ciency #exible
a-Si solar cell production.
Acknowledgements
References
[1] Y. Ichikawa, K. Tabuchi, S. Kato, A. Takano, T. Sasaki, M. Tanda, S. Saito, H. Sato, Tyoshida, H.
Sakai, A new structure a-Si solar cell with plastic "lm substrate, Proceedings of the First WCPEC,
Hawaii, 1994, pp. 441}444.
Y. Ichikawa et al. / Solar Energy Materials & Solar Cells 66 (2001) 107}115 115
[2] Y. Ichikawa, K. Tabuchi, A. Takano, S. Fujikake, T. Yoshida, H. Sakai, J. Non-Cryst. Solids 198}200
(1996) 1081.
[3] Y. Ichikawa, S. Fujikake, K. Tabuchi, T. Sasaki, T. Hama, T. Yoshida, H. Sakai, M. Saga, Flexible a-Si
based solar cells with plastic "lm substrate, MRS Symp. Proc. Vol. 557, San Francisco, 1999,
pp. 703}712.
[4] K. Tabuchi, S. Fujikake, T. Sasaki, S. Hayashi, S. Sato, S. Saito, T. Yoshida, T. Hama, H. Sakai, Y.
Ichikawa, M. Saga, Improvement of a-SiGe solar cells and their application to SCAF structure solar
cells with plastic "lm substrate, Technical Digest Int. PVSEC-11, Hokkaido, 1999, pp. 235}236.