Lifetime Prediction of IGBT in a STATCOM Using Modified-

Graphical Rainflow Counting Algorithm

Comparison of Rainflow Methods:
 ASTM Standard Method oder 3-point-algorithm (used in MATLAB)
 Fast Rainflow (FR)
 4-point-algorithm
 Graphical
 Modified Graphical (MGRM)

Rainflow-Counting-Algorithm application (IGBT in a STATCOM):

The algorithm counts the temperature data that constitute a closed stress loop as a cycle
and calculates the mean and amplitude of the temperature data. The temperature swing
and mean values are used in lifetime estimation using Coffin-Mason's lifetime equation.
Linear cumulative model is used to estimate the lifetime.
The lifetime degradation of the semiconductors in 5 minutes is calculated and can be
extrapolated to estimate the lifetime. The power factor data over 5 minutes is required for
the rainflow counting analysis.
One cycle with a changing power factor sequence is recorded for 5 minutes and repeated for
5 hours under a constant load (100A).
Temperature of IGBT for the same load profile over 5 minutes is calculated using a thermal
model of the device.
The mean value and the amplitude can be depicted in a histogram for a certain number of
cycles.
Following formula describes the dependence of the device life given in number of cycles on
the mean temperature and the amplitude of the junction temperature:
Q
α R × Tm
N f ( T m , ∆ T j )= A × ∆ T j × e

A and α are constants and are module-dependent!!!

R is the gas constant; Q is the internal energy; Tm is the mean junction temperature;
∆Tj is the variation of the junction temperature
Constants A and α can be determined by curve fitting supplier's power cycling data to that of
the formula above.
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Linear accumulation of the fatigue damage is considered.
The remaining life is given by
N (∆ T )
RL=1−∑
Nf ( ∆ T )

Therefore. At first you calculate the number of cycles where the device fails and you have to
determine the sum of all the cycles N(∆T). In this case choosing 5 hours operation time and a
cycle-time of 5 minutes you would get N(∆T)=60.
Furthermore, you calculate the number of cycles of the remaining lifetime RL. In this case
choosing a cycle-time of 5 minutes you would calculate the remaining lifetime with:
RL∗cycle ¿
R LYrs=
60∗24∗365

Question: Formula only valid for IGBT or can it be used for GaN or SiC MOSFETs?
Answer: The Arrhenius and Coffin-Mason law:
The typical model of predicting the number of cycles to fail based power cycling capability is
given by Arrhenius and Coffin-Mason laws of degradation.

Question: Which thermal model is used to determine the junction temperature of the
IGBT?
Reliability_of_IGBT_in_a_STATCOM_for_harmonic_comp.pdf
Answer: Foster basted thermal model of the 4th-order is used. The calculation of junction and
case temperatures were based on the datasheet values of the thermal resistances of the
IGBTs and diodes.