Thermal Modeling of PE Devices

T-TN007 (v1.3) December 26, 2018

Abstract

This document gives the basic principles behind the averaged losses calculation in power
electronic switching blocks (PESB) and development of PESB thermal model.
Typhoon HIL Thermal Modeling of PE Devices

Table of Contents
1 Simplified thermal model of a PE device .................................................................. 2
2 Principles of losses calculation ............................................................................... 6
2.1 IGBT / MOSFET loss calculation and considerations ............................................ 6
3 Thermal analysis of a PESB ................................................................................. 10
4 Loss calculation in DC-link capacitor and thermal model .......................................... 12
4.1 Single-phase inverter DC-link capacitor losses ................................................. 12
5 References ........................................................................................................ 13
6 Revision history ................................................................................................. 13

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Typhoon HIL Thermal Modeling of PE Devices

1 Simplified thermal model of a PE device

First step in the process of power electronic device's thermal modeling is to represent
thermal behavior of all components of interest as the first order low-pass filter transfer
functions with output power at their inputs and temperatures of components at their
outputs. Figure 1 illustrates the modeling concept, where components of interest for thermal
modeling were the heat sink of converter (designated by index H), grid voltage transformer
(index XFR) and DC-link electrolytic capacitor (index CAP). PAVG designates output power
averaged over one output voltage period (for inverters PAVG represents averaged apparent
power), Rth_H is the thermal resistance between the heat sink and ambient, Cth_H is thermal
capacitance of the heat sink, Rth_XFR is the thermal resistance between the transformer body
and ambient, Cth_XFR is thermal capacitance of the transformer, Rth_CAP is the thermal
resistance between the capacitor body and ambient, C th_CAP is thermal capacitance of the
capacitor, TA is ambient temperature (reference value), TH is heat sink temperature, TXFR is
transformer temperature and TCAP is capacitor temperature.

Figure 1. Simplified thermal model of a PE device

If a cooling fan is applied then thermal resistances will depend on the fan speed. In case the
DC motor is driving the fan, the speed is directly proportional to the applied DC motor
voltage, 𝑣𝐹𝐴𝑁 . Assuming that thermal resistances will linearly drop as the fan speed is
increased, it can be expressed as:

Rth
Rth  Rth _ 0   VFAN (1.1)
V FAN

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The asymptotical value of the model's temperature can be expressed as:

T  PAVG  Rth  TA (1.2)

where 𝑅𝑡ℎ is any of thermal resistances of the model, 𝑅𝑡ℎ_0 are their maximal values
∆𝑅𝑡ℎ
(corresponding to zero fan speed), are rate of thermal resistances' change due to the
∆𝑣𝐹𝐴𝑁
∆𝑅𝑡ℎ
change in 𝑣𝐹𝐴𝑁 . must be a negative number. Overall value of 𝑅𝑡ℎ must be positive.
∆𝑣𝐹𝐴𝑁

Parameters of the model, thermal resistances and thermal capacitances can be determined
by measuring change of temperatures of the components after step change in the output
power, or powering up of the device (see Figure 2).

τth=Rth∙Cth
T(t)

63%
R th∙PAVG

t
τth

Figure 2. Experimental determination of thermal model parameters

Thermal time constant τth of a component is defined as the product of thermal resistance
and thermal capacitance:

𝜏𝑡ℎ = 𝑅𝑡ℎ ∙ 𝐶𝑡ℎ (1.3)

and can be found as a time elapsed from the instant of step change in the averaged power
till the moment response of the component temperature reaches 63% of steady-state value.

First order low-pass filter in the discrete form

𝑅𝑡ℎ and 𝐶𝑡ℎ cells in the thermal model of each of thermal elements form one low-pass filter
whose input is PAVG and output, the elements' temperature. In the discrete form low pass
filter can be represented as given on Figure 3: 𝑇𝑆 is sampling period of the filter, 𝜏𝑓 is the
time constant of the filter.

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Typhoon HIL Thermal Modeling of PE Devices

discrete
integrator
xin + 1 xout
τS/Tf
- 1-z-1

Figure 3. Discrete form of the first order low-pass filter

Transfer function of the filter is:

1
𝑋𝑜𝑢𝑡 = 𝜏𝑓 ∙ 𝑋𝑖𝑛 . (1.4)
∙(1−𝑧 −1 )+1
𝑇𝑆

In the time domain (1.3) has the following form:

𝜏𝑓
1 𝑇𝑆
𝑥𝑜𝑢𝑡 (𝑘) = 𝜏𝑓 ∙ 𝑥𝑖𝑛 (𝑘) + 𝜏𝑓 ∙ 𝑥𝑜𝑢𝑡 (𝑘 − 1) . (1.5)
1+ 1+
𝑇𝑆 𝑇𝑆

Measurement of 𝑃𝐴𝑉𝐺

Averaged output power, 𝑃𝐴𝑉𝐺 , (for inverters PAVG represents averaged apparent power) can
be calculated based on the fundamental component of the current and fundamental
component of the output voltage.

In case of single-phase inverter 𝑃𝐴𝑉𝐺 (apparent power) is equal to:

1
𝑃𝐴𝑉𝐺 = ∙ 𝐼𝑚𝑎𝑥 ∙ 𝑉𝑚𝑎𝑥 (1.6)
2

where 𝐼𝑚𝑎𝑥 is maximal value of the fundamental component of output current and 𝑉𝑚𝑎𝑥 is
maximal value of the fundamental component of output voltage.

For the three phase inverter expression for the 𝑃𝐴𝑉𝐺 (apparent power) is:

3
𝑃𝐴𝑉𝐺 = ∙ 𝐼𝑚𝑎𝑥 ∙ 𝑉𝑚𝑎𝑥 (1.7)
2

where 𝐼𝑚𝑎𝑥 is maximal value of the fundamental component of phase current and 𝑉𝑚𝑎𝑥 is
maximal value of the fundamental component of phase voltage.

Values 𝐼𝑚𝑎𝑥 and 𝑉𝑚𝑎𝑥 need to be found from the measurement samples of the output current
and output voltage, respectively. Due to the inductive nature of the loading of voltage
source inverters, and thus usually low current ripple, 𝐼𝑚𝑎𝑥 can be directly read from the
obtained samples.

On the other hand, finding 𝑉𝑚𝑎𝑥 requires much more processing of the sampled values. Still,
in the grid connected inverters fundamental of the inverter output voltage differs only
slightly from the corresponding grid voltage. Therefore, approximate value of 𝑉𝑚𝑎𝑥 can be

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Typhoon HIL Thermal Modeling of PE Devices

found directly from measurements of the grid voltage or even entered as a parameter if stiff
grid voltage is assumed.

Table 1. List of inputs, outputs and parameters of the simplified thermal model

INPUTS UNIT
PAVG W AVERAGED OUTPUT (APPARENT) POWER
VFAN V DC MOTOR VOLTAGE DRIVING FAN
OUTPUTS UNIT
TH ˚C HEAT SINK TEMPERATURE
TXFR ˚C GRID TRANSFORMER TEMPERATURE
TCAP ˚C DC-LINK TEMPERATURE
PARAMETERS UNIT
TA ˚C AMBIENT TEMPERATURE
THERMAL RESISTANCE HEAT SINK-TO-AMBIENT FOR ZERO FAN SPEED,
Rth_H_0 ˚C/W
VFAN=0
THERMAL RESISTANCE TRANSFORMER-TO-AMBIENT FOR ZERO FAN SPEED,
Rth_XFR_0 ˚C/W
VFAN=0
THERMAL RESISTANCE CAPACITOR-TO-AMBIENT FOR ZERO FAN SPEED,
Rth_CAP_0 ˚C/W
VFAN=0
RATE OF THERMAL RESISTANCE HEAT SINK-TO-AMBIENT CHANGE DUE TO
∆Rth_H/∆VFAN ˚C/W
CHANGE IN VFAN
RATE OF THERMAL RESISTANCE TRANSFORMER-TO-AMBIENT CHANGE DUE TO
∆Rth_XFR/∆VFAN ˚C/W
CHANGE IN VFAN
RATE OF THERMAL RESISTANCE CAPACITOR-TO-AMBIENT CHANGE DUE TO
∆Rth_CAP/∆VFAN ˚C/W
CHANGE IN VFAN
τth_H s∙W/˚C THERMAL TIME CONSTANT OF THE HEAT SINK
τth_XFR s∙W/˚C THERMAL TIME CONSTANT OF THE GRID TRANSFORMER
τth_CAP s∙W/˚C THERMAL TIME CONSTANT OF THE DC-LINK CAPACITOR

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2 Principles of losses calculation

Method of loss calculation given in this document was taken over from the application note
of two biggest manufacturers of power electronic switching components - ABB [1] and
Semikron [2]. It is based on averaged computation of the conduction and switching losses
over one period, 𝑇0 , of output frequency. The approach is applicable for the single-phase or
three-phase voltage source inverters using naturally sampled PWM and with sinusoidal
output currents. Therefore, it is also fully applicable in grid connected applications and
motor drive applications. Required data for the power electronics (PE) components are
derived from their data sheets.

2.1 IGBT / MOSFET loss calculation and considerations

NOTE: This document will refer to loss calculation for IGBTs. All considerations and
calculations are applicable to MOSFETs, provided all designation indices corresponding to
MOSFETs are exchanged.
Instantaneous losses inside a IGBT, 𝑝𝐼𝐺𝐵𝑇 , consist of conduction losses, 𝑝𝑐𝑜𝑛𝑑𝐼𝐺𝐵𝑇 , and
switching losses, 𝑝𝑠𝑤𝐼𝐺𝐵𝑇 . Conduction losses can be expressed as:

𝑝𝑐𝑜𝑛𝑑𝐼𝐺𝐵𝑇 = (𝑉𝐶𝐸0 + 𝑟𝐶𝐸 ∙ 𝑖𝐶 ) ∙ 𝑖𝐶 (1)

where 𝑉𝐶𝐸0 is collector-emitter threshold voltage, 𝑟𝐶𝐸 is IGBT's on-state slope resistance and
𝑖𝐶 is collector current. Since each IGBT (Fig. 1) conducts over one half of the period 𝑇0 (see
Fig. 2), averaged value of the conduction losses, 𝑃𝑐𝑜𝑛𝑑𝐼𝐺𝐵𝑇 , can be calculated as:

1 𝑇0 /2
𝑃𝑐𝑜𝑛𝑑𝐼𝐺𝐵𝑇 = ∫ (𝑉𝐶𝐸0 ∙ 𝐼𝑚𝑎𝑥 ∙ sin(𝜔𝑡) + 𝑟𝐶𝐸 ∙ (𝐼𝑚𝑎𝑥 ∙ sin(𝜔𝑡))2 ∙ 𝜏(𝑡) ∙ 𝑑𝑡 (2)
𝑇0 0

where 𝐼𝑚𝑎𝑥 is maximal value of the output current and 𝜏(𝑡) is function of the pulse pattern
(𝜏 = 1 for IGBT turned-on, 𝜏 = 0 for IGBT turned-off). It should be noted that, due to the
periodic shape of the output current and 𝜏(𝑡), expression (2) is valid for all transistors in the
inverter.

iC1

iA
vA
vDC

iD2

Figure 4. Topology of the IGBT leg

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Typhoon HIL Thermal Modeling of PE Devices

iA, vA vA vA(1) iA

Imax

iC1 φ 1/fSW

iD2

T0

Figure 5. Voltages and currents inside the IGBT leg with inductive load

Assuming that switching frequency, 𝑓𝑠𝑤 , is much higher than 1/𝑇0 , 𝜏(𝑡) can be approximated
with:
1
𝜏(𝑡) = (1 + 𝑀 ∙ sin(𝜔𝑡 + 𝜑)) (3)
2

where 𝑀 is maximal value of the modulation index (0 < 𝑀 < 1 in the linear mode of PWM)
and 𝜑 is output current to output voltage phase displacement angle. Inserting (3) into (2)
and after solving the integral, 𝑃𝑐𝑜𝑛𝑑𝐼𝐺𝐵𝑇 is obtained in the form [1], [2]:

1 𝐼𝑚𝑎𝑥 2
𝐼𝑚𝑎𝑥 𝐼𝑚𝑎𝑥 1 2
𝑃𝑐𝑜𝑛𝑑𝐼𝐺𝐵𝑇 = ∙ (𝑉𝐶𝐸0 ∙ + 𝑟𝐶𝐸 ∙ ) + 𝑀 ∙ 𝑐𝑜𝑠𝜑 ∙ (𝑉𝐶𝐸0 ∙ + ∙ 𝑟𝐶𝐸 ∙ 𝐼𝑚𝑎𝑥 ) (4)
2 𝜋 4 8 3∙𝜋

In grid connected applications 𝑀 can be regarded constant and entered as an parameter

into the loss calculation algorithm. The same stands for 𝑐𝑜𝑠𝜑: in the control algorithm it is
usually kept at the pre-set value (e.g. 𝑐𝑜𝑠𝜑 = 1 for the distribution networks) and can be
entered as a parameter. Therefore, to find 𝑃𝑐𝑜𝑛𝑑𝐼𝐺𝐵𝑇 value, 𝐼𝑚𝑎𝑥 needs to be measured.

IGBT's switching losses during each switching cycle consist of turn-on and turn-off losses.
There are usually expressed in the form of energies:

𝐸𝑠𝑤𝐼𝐺𝐵𝑇 = 𝐸𝑜𝑛 + 𝐸𝑜𝑓𝑓 . (5)

Data sheets give the dependency of loss switching energy, 𝐸𝑠𝑤𝐼𝐺𝐵𝑇 (= 𝐸𝑜𝑛 + 𝐸𝑜𝑓𝑓 ), on IGBT's
current in the polynomial form (see Fig. 3):

𝐸𝑠𝑤𝐼𝐺𝐵𝑇 = 𝑎𝐼𝐺𝐵𝑇 + 𝑏𝐼𝐺𝐵𝑇 ∙ 𝑖𝐶 + 𝑐𝐼𝐺𝐵𝑇 ∙ 𝑖𝐶2 . (6)

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Figure 6. Curves of 𝐸𝑜𝑛 and 𝐸𝑜𝑓𝑓 IGBT's switching energies as a function of the current (for inductive
loaded switch) and polynomial function approximating 𝐸𝑠𝑤𝐼𝐺𝐵𝑇 (= 𝐸𝑜𝑛 + 𝐸𝑜𝑓𝑓 ) [1]

Expression (6) is valid when DC-link is supplied with nominal value of the IGBT voltage,
𝑉𝑛𝑜𝑚 . If in an application DC voltage differs from 𝑉𝑛𝑜𝑚 , a good rule of thumb is to
proportionally change the catalogue value of 𝐸𝑠𝑤𝐼𝐺𝐵𝑇 [1]:
𝑣𝐷𝐶
𝐸𝑠𝑤𝐼𝐺𝐵𝑇 = (𝑎𝐼𝐺𝐵𝑇 + 𝑏𝐼𝐺𝐵𝑇 ∙ 𝑖𝐶 + 𝑐𝐼𝐺𝐵𝑇 ∙ 𝑖𝐶2 ) ∙ . (7)
𝑉𝑛𝑜𝑚

Averaged value of switching losses, 𝑃𝑠𝑤𝐼𝐺𝐵𝑇 , during one period 𝑇0 is:

1
𝑃𝑠𝑤𝐼𝐺𝐵𝑇 = ∙ ∑𝑛 𝐸𝑠𝑤 (𝑖𝐶 ) (8)
𝑇0

where 𝑛 denotes number of switching cycles, 1/𝑓𝑠𝑤 , during one 𝑇0 period. Assuming
sinusoidal output current in (8), i.e. (7), expression for 𝑃𝑠𝑤𝐼𝐺𝐵𝑇 can be obtained in the form
[1]:

𝑎𝐼𝐺𝐵𝑇 𝑏𝐼𝐺𝐵𝑇 ∙𝐼𝑚𝑎𝑥 2

𝑐𝐼𝐺𝐵𝑇 ∙𝐼𝑚𝑎𝑥 𝑣𝐷𝐶
𝑃𝑠𝑤𝐼𝐺𝐵𝑇 = 𝑓𝑠𝑤 ∙ ( + + )∙ . (9)
2 𝜋 4 𝑉𝑛𝑜𝑚

Switching frequency, 𝑓𝑠𝑤 , is often fixed for the given PE converter and thus can be entered
as parameter in loss calculation algorithm. As said, polynomial coefficients, 𝑎𝐼𝐺𝐵𝑇 , 𝑏𝐼𝐺𝐵𝑇 and
𝑐𝐼𝐺𝐵𝑇 , and nominal IGBT voltage 𝑉𝑛𝑜𝑚 are all data sheet values. Therefore, to find 𝑃𝑠𝑤𝐼𝐺𝐵𝑇
value, 𝐼𝑚𝑎𝑥 and 𝑣𝐷𝐶 needs to be measured. Total averaged IGBT losses, 𝑃𝐼𝐺𝐵𝑇 , are the sum of
expressions (4) and (9):

𝑃𝐼𝐺𝐵𝑇 = 𝑃𝑐𝑜𝑛𝑑𝐼𝐺𝐵𝑇 + 𝑃𝑠𝑤𝐼𝐺𝐵𝑇 . (10)

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Diode losses are calculated in almost the same manner. In the process of deriving averaged
diode conduction losses, 𝑃𝑐𝑜𝑛𝑑𝐷𝐼𝑂𝐷𝐸 , pulse pattern, 𝜏(𝑡), needs to be negated with respect to
(2) (see Fig. 2). 𝑃𝑐𝑜𝑛𝑑𝐷𝐼𝑂𝐷𝐸 is obtained in the form:

1 𝐼𝑚𝑎𝑥 2
𝐼𝑚𝑎𝑥 𝐼𝑚𝑎𝑥 1 2
𝑃𝑐𝑜𝑛𝑑𝐷𝐼𝑂𝐷𝐸 = ∙ (𝑉𝐹0 ∙ + 𝑟𝐹 ∙ ) − 𝑀 ∙ 𝑐𝑜𝑠𝜑 ∙ (𝑉𝐹0 ∙ + ∙ 𝑟𝐹 ∙ 𝐼𝑚𝑎𝑥 ) (11)
2 𝜋 4 8 3∙𝜋

where 𝑉𝐹0 is diode's forward threshold voltage and 𝑟𝐹 is diode's forward slope resistance.
Energy loss during turn-on of the diode can be neglected. Energy during turn-off is
expressed by the reverse recovery energy, 𝐸𝑟𝑒𝑐 , again available in the polynomial form as a
function of the forward current 𝑖𝐹 (Figure 7):

𝐸𝑟𝑒𝑐𝐷𝐼𝑂𝐷𝐸 = 𝑎𝐷𝐼𝑂𝐷𝐸 + 𝑏𝐷𝐼𝑂𝐷𝐸 ∙ 𝑖𝐹 + 𝑐𝐷𝐼𝑂𝐷𝐸 ∙ 𝑖𝐹2 . (12)

Figure 7. Curves of diode's reverse recovery parameters as a function of the forward current (for
inductive load) and polynomial function approximating 𝐸𝑟𝑒𝑐 (𝑖𝐹 ) [1]

Averaged recovery losses are obtained as a function of maximal value of output current,
𝐼𝑚𝑎𝑥 , and DC-link voltage, 𝑣𝐷𝐶 , while switching frequency, 𝑓𝑠𝑤 , is regarded parameter:

𝑎𝐷𝐼𝑂𝐷𝐸 𝑏𝐷𝐼𝑂𝐷𝐸 ∙𝐼𝑚𝑎𝑥 2

𝑐𝐷𝐼𝑂𝐷𝐸 ∙𝐼𝑚𝑎𝑥 𝑣𝐷𝐶
𝑃𝑟𝑒𝑐𝐷𝐼𝑂𝐷𝐸 = 𝑓𝑠𝑤 ∙ ( + + )∙ . (13)
2 𝜋 4 𝑉𝑛𝑜𝑚

Total averaged diode losses, 𝑃𝐷𝐼𝑂𝐷𝐸 , are the sum of expressions (11) and (13):

𝑃𝐷𝐼𝑂𝐷𝐸 = 𝑃𝑐𝑜𝑛𝑑𝐷𝐼𝑂𝐷𝐸 + 𝑃𝑟𝑒𝑐𝐷𝐼𝑂𝐷𝐸 . (14)

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3 Thermal analysis of a PESB

Thermal model of the PESB can be represented by analogous electrical circuit from Figure
8(a), corresponding to PESB with base plate, or electrical circuit form Figure 8(b),
corresponding to PESB without base plate [1]. Often it's utilized to calculate IGBT's and
diode's junction temperatures, 𝑇𝐽 𝐼𝐺𝐵𝑇 and 𝑇𝐽 𝐷𝐼𝑂𝐷𝐸 , in various operating conditions or to find
maximal possible PESB loading that does not push junction temperatures beyond maximal
permissible values. In the model, current sources' values correspond to the power losses in
the IGBT, 𝑃𝐼𝐺𝐵𝑇 , and diode, 𝑃𝐷𝐼𝑂𝐷𝐸 , determined in the previous chapter. As noted there,
averaged losses of all IGBTs in the inverter are equal, the same is valid for diodes:

𝑃𝐼𝐺𝐵𝑇(1) = 𝑃𝐼𝐺𝐵𝑇(𝑛) , 𝑃𝐷𝐼𝑂𝐷𝐸(1) = 𝑃𝐷𝐼𝑂𝐷𝐸(𝑛) . (15)

switch 1 ... switch n

TJ IGBT TJ DIODE TJ IGBT TJ DIODE
PIGBT Z J-C IGBT PDIODE Z PIGBT Z J-C IGBT PDIODE ZJ-C DIODE
J-C DIODE

TC IGBT TC DIODE TC IGBT TC DIODE

ZC-H IGBT Z C-H DIODE Z C-H IGBT Z C-H DIODE

TH - reference
ZH-A

TA
a)

switch 1 ... switch n

TJ IGBT TJ DIODE TJ IGBT TJ DIODE

PIGBT PDIODE PIGBT PDIODE

Z J-H IGBT Z J-H DIODE Z J-H IGBT Z J-H DIODE

TH - reference
ZH-A

TA
b)

Figure 8. a) Thermal model of the PESB with base plate; b) Thermal model of the PESB without base
plate

Parameters of the model are thermal impedances junction to case, 𝑍𝐽−𝐶 𝐼𝐺𝐵𝑇 and 𝑍𝐽−𝐶 𝐷𝐼𝑂𝐷𝐸 ,
case to heat sink, 𝑍𝐶−𝐻 𝐼𝐺𝐵𝑇 and 𝑍𝐶−𝐻 𝐷𝐼𝑂𝐷𝐸 , and heat sink to ambient, 𝑍𝐻−𝐴 (common heat sink
for the whole PESB is assumed), and ambient temperature, 𝑇𝐴 . Each of thermal impedances
comprises two parameters: thermal resistance and thermal time constant:

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𝑡 𝑡
− −
𝜏𝐽−𝐶 𝐼𝐺𝐵𝑇 𝜏𝐽−𝐶 𝐷𝐼𝑂𝐷𝐸
𝑍𝐽−𝐶 𝐼𝐺𝐵𝑇 = 𝑅𝐽−𝐶 𝐼𝐺𝐵𝑇 ∙ (1 − 𝑒 ), 𝑍𝐽−𝐶 𝐷𝐼𝑂𝐷𝐸 = 𝑅𝐽−𝐶 𝐷𝐼𝑂𝐷𝐸 ∙ (1 − 𝑒 ),

𝑡 𝑡
− −
𝑍𝐶−𝐻 𝐼𝐺𝐵𝑇 = 𝑅𝐶−𝐻 𝐼𝐺𝐵𝑇 ∙ (1 − 𝑒 𝜏𝐶−𝐻 𝐼𝐺𝐵𝑇 ), 𝑍𝐶−𝐻 𝐷𝐼𝑂𝐷𝐸 = 𝑅𝐶−𝐻 𝐷𝐼𝑂𝐷𝐸 ∙ (1 − 𝑒 𝜏𝐶−𝐷 𝐷𝐼𝑂𝐷𝐸 ), (16)
𝑡
−
𝑍𝐻−𝐴 = 𝑅𝐻−𝐴 ∙ (1 − 𝑒 𝜏𝐻−𝐴 ).

Model of a PESB without baseplate does not include separate 𝑍𝐽−𝐶 𝐼𝐺𝐵𝑇 and 𝑍𝐶−𝐻 𝐼𝐺𝐵𝑇
impedances (the same is valid for diodes) since junction is directly placed onto the heat
sink. Instead, there would be given thermal impedances junction to heat sink, 𝑍𝐽−𝐻 𝐼𝐺𝐵𝑇 and
𝑍𝐽−𝐻 𝐷𝐼𝑂𝐷𝐸 .

Thermal impedances represent first order low lass filter to propagation of power losses.
Therefore, they can be represented by the corresponding transfer function; e.g. for 𝑍𝐽−𝐶 𝐼𝐺𝐵𝑇 :

𝑅𝐽−𝐶 𝐼𝐺𝐵𝑇
𝑍𝐽−𝐶 𝐼𝐺𝐵𝑇 (𝑠) = . (17)
1+𝑠∙𝜏𝐽−𝐶 𝐼𝐺𝐵𝑇

Since time constant of the heat sink, 𝜏𝐻−𝐴 , is much higher than the other time constants in
the model, heat sink temperature, 𝑇𝐻 , can be regarded reference value. Based on the model
from Fig.5(a) or Fig.5(b) it can be calculated as:
𝑅𝐻−𝐴
𝑇𝐻 = 𝑛 ∙ (𝑃𝐼𝐺𝐵𝑇 + 𝑃𝐷𝐼𝑂𝐷𝐸 ) ∙ + 𝑇𝐴 (18)
1+𝑠∙𝜏𝐻−𝐴

where 𝑛 is the number of IGBT/diode pairs in the PESB. Finally, in the model from Fig. 5(a)
IGBT's junction temperature equals:
𝑅𝐽−𝐶 𝐼𝐺𝐵𝑇 𝑅𝐶−𝐻 𝐼𝐺𝐵𝑇
𝑇𝐽 𝐼𝐺𝐵𝑇 = 𝑃𝐼𝐺𝐵𝑇 ∙ + 𝑃𝐼𝐺𝐵𝑇 ∙ + 𝑇𝐻 (19)
1+𝑠∙𝜏𝐽−𝐶 𝐼𝐺𝐵𝑇 1+𝑠∙𝜏𝐶−𝐻 𝐼𝐺𝐵𝑇

and diode's junction temperature is:

𝑅𝐽−𝐶 𝐷𝐼𝑂𝐷𝐸 𝑅𝐶−𝐻 𝐷𝐼𝑂𝐷𝐸
𝑇𝐽 𝐷𝐼𝑂𝐷𝐸 = 𝑃𝐷𝐼𝑂𝐷𝐸 ∙ + 𝑃𝐷𝐼𝑂𝐷𝐸 ∙ + 𝑇𝐻 . (20)
1+𝑠∙𝜏𝐽−𝐶 𝐷𝐼𝑂𝐷𝐸 1+𝑠∙𝜏𝐶−𝐻 𝐷𝐼𝑂𝐷𝐸

In the model from Fig. 5(b) same equations can be used, Eq.(19) and Eq.(20), with second
particles cancelled by assigning zero values to 𝑅𝐶−𝐻 𝐼𝐺𝐵𝑇 and 𝑅𝐶−𝐻 𝐷𝐼𝑂𝐷𝐸 .

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4 Loss calculation in DC-link capacitor and thermal model

Losses in DC-link capacitor, 𝑃𝐶 , are equal to the squared RMS value of the capacitor current,
2
𝐼𝐶(𝑅𝑀𝑆) , multiplied by capacitor's equivalent series resistance, 𝑅𝐸𝑆𝑅 :

2
𝑃𝐶 = 𝑅𝐸𝑆𝑅 ∙ 𝐼𝐶(𝑅𝑀𝑆) (21)

Losses in DC-link capacitor depend upon applied PE converter modulation technique.

Therefore, its losses calculation procedure is tied to the losses calculation of the converter.

4.1 Single-phase inverter DC-link capacitor losses

Single phase inverter is usually controlled using one of PWM techniques - bipolar or unipolar
PWM. The selection influences current that the converter draws from the DC-link, 𝑖𝐷𝐶 .

iL iDC

iC
S1 S3
iOUT
vOUT
vDC

S2 S4

Figure 9. Topology of single phase inverter

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Typhoon HIL Thermal Modeling of PE Devices

5 References
[1] ABB: "Applying IGBTs", Application Note, doc.no. 5SYA2053-04 Mai 12, available on-line
at
http://www.abb.com/product/db0003db004291/c12573e7003304adc1256f01003e367f.aspx
?productLanguage=us&country=RS

[2] Semikron: "Application Manual - Power Modules", First edition, Semikron International,
2000, ISBN 3-932633-46-6

6 Revision history

Date Version Revision

08-02-13 0.1 Draft.

14-06-13 1.0 Initial release.
Added equation for asymptotical value of temperatures. R th
21-05-14 1.1
equation fixed.
Thermal tab layout modified. CSV files not supported
19-07-16 1.2
anymore.
26-12-18 1.3 Deleted outdated chapter.

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