TIC116 SERIES

SILICON CONTROLLED RECTIFIERS

8 A Continuous On-State Current

80 A Surge-Current TO-220 PACKAGE

(TOP VIEW)
Glass Passivated Wafer

400 V to 800 V Off-State Voltage K 1

A 2
Max IGT of 20 mA
G 3

This series is obsolete and Pin 2 is in electrical contact with the mounting base.
not recommended for new designs. MDC1ACA

absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING SYMBOL VALUE UNIT
TIC116D 400
TIC116M 600
Repetitive peak off-state voltage VDRM V

E
TIC116S 700
TIC116N 800

T
TIC116D 400
TIC116M 600

E
Repetitive peak reverse voltage VRRM V
TIC116S 700

L
TIC116N 800
Continuous on-state current at (or below) 70°C case temperature (see Note 1) IT(RMS) 8 A

(see Note 2)

SO
Average on-state current (180° conduction angle) at (or below) 70°C case temperature

Surge on-state current at (or below) 25°C case temperature (see Note 3)
IT(AV)

ITM
5

80
A

B
Peak positive gate current (pulse width ≤ 300 µs) IGM 3 A
Peak gate power dissipation (pulse width ≤ 300 µs) PGM 5 W

O
Average gate power dissipation (see Note 4) PG(AV) 1 W
Operating case temperature range TC -40 to +110 °C
Storage temperature range Tstg -40 to +125 °C
Lead temperature 1.6 mm from case for 10 seconds TL 230 °C
NOTES: 1. These values apply for continuous dc operation with resistive load. Above 70°C derate linearly to zero at 110°C.
2. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 70°C derate
linearly to zero at 110°C.
3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
4. This value applies for a maximum averaging time of 20 ms.

APRIL 1971 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.
1
TIC116 SERIES
SILICON CONTROLLED RECTIFIERS

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Repetitive peak
IDRM VD = rated VDRM TC = 110°C 2 mA
off-state current
Repetitive peak
IRRM VR = rated VRRM IG = 0 TC = 110°C 2 mA
reverse current
IGT Gate trigger current VAA = 12 V RL = 100 Ω tp(g) ≥ 20 µs 8 20 mA
VAA = 12 V RL = 100 Ω TC = - 40°C
2.5
tp(g) ≥ 20 µs
VAA = 12 V RL = 100 Ω
VGT Gate trigger voltage 0.8 1.5 V
tp(g) ≥ 20 µs
VAA = 12 V RL = 100 Ω TC = 110°C
0.2
tp(g) ≥ 20 µs
VAA = 12 V TC = - 40°C
100
Initiating IT = 100 mA
IH Holding current mA
VAA = 12 V
40
Initiating IT = 100 mA
On-state
VT IT = 8 A (see Note 5) 1.7 V
voltage

E
Critical rate of rise of
dv/dt VD = rated VD IG = 0 TC = 110°C 400 V/µs
off-state voltage

T
NOTE 5: This parameter must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2 %. Voltage sensing-contacts, separate from
the current carrying contacts, are located within 3.2 mm from the device body.

thermal characteristics

LE
O
PARAMETER MIN TYP MAX UNIT

S
RθJC Junction to case thermal resistance 3 °C/W
RθJA Junction to free air thermal resistance 62.5 °C/W

OB

 


APRIL 1971 - REVISED SEPTEMBER 2002
2 Specifications are subject to change without notice.
 TIC116 SERIES
SILICON CONTROLLED RECTIFIERS

THERMAL INFORMATION

AVERAGE ON-STATE CURRENT MAX ANODE POWER LOSS

DERATING CURVE vs
ON-STATE CURRENT
TI03AA TI03AB
16 100

PA - Max Continuous Anode Power Dissipated- W

TJ = 110°C
IT(AV) - Maximum Average On-State Current - A

14

12
0° 180°
Φ 10
10 Conduction
Continuous DC Angle
8

6
1

4 Φ = 180°

TE
E
0 0·1
30 40 50 60 70 80 90 100 110 0·1 1 10 100

L
TC - Case Temperature - °C IT - Continuous On-State Current - A

O
Figure 1. Figure 2.

S
SURGE ON-STATE CURRENT TRANSIENT THERMAL RESISTANCE
vs vs

B
CYCLES OF CURRENT DURATION CYCLES OF CURRENT DURATION
TI03AC TI03AD

O
100 10
RθJC(t) - Transient Thermal Resistance - °C/W
ITM - Peak Half-Sine-Wave Current - A

10 1

TC ≤ 70°C
No Prior Device Conduction
Gate Control Guaranteed
1 0·1
1 10 100 1 10 100
Consecutive 50 Hz Half-Sine-Wave Cycles Consecutive 50 Hz Half-Sine-Wave Cycles
Figure 3. Figure 4.

 


APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
TIC116 SERIES
SILICON CONTROLLED RECTIFIERS

TYPICAL CHARACTERISTICS

GATE TRIGGER CURRENT GATE TRIGGER VOLTAGE

vs vs
CASE TEMPERATURE CASE TEMPERATURE
TC03AA TC03AB
1

VAA =12 V
RL = 100 Ω
IGT - Gate Trigger Current - mA

0·8

VGT - Gate Trigger Voltage - V

tp(g) ≥ 20 µs

10
0·6

0·4

VAA =12 V
RL = 100 Ω

E
0·2
tp(g) ≥ 20 µs

1
-50 -25 0 25 50

ET 75 100 125
0
-50 -25 0 25 50 75 100 125

L
TC - Case Temperature - °C TC - Case Temperature - °C

O
Figure 5. Figure 6.

S
HOLDING CURRENT PEAK ON-STATE VOLTAGE
vs vs

B
CASE TEMPERATURE PEAK ON-STATE CURRENT
TC03AD TC03AE

O
100 2·5
TC = 25 °C
VAA = 12 V
tP = 300 µs
Initiating IT = 100 mA
VTM - Peak On-State Voltage - V

2 Duty Cycle ≤ 2 %
IH - Holding Current - mA

1·5

10

0·5

1 0
-50 -25 0 25 50 75 100 125 0·1 1 10 100
TC - Case Temperature - °C ITM - Peak On-State Current - A
Figure 7. Figure 8.

 


APRIL 1971 - REVISED SEPTEMBER 2002
4 Specifications are subject to change without notice.