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SILICON NPN TRIPLE DIFFUSEDMESA TYPE BU2M

BU205
Unit in mm
TV HORIZONTAL OUTPUT APPLICAT IONS.
x'
I
Zte&OMAX. <!

FEATURES x' 021.0 MAX X

. High Voltage : V CES =1300V ( 3U204) CD

rf
— 3
CO
H
H

1500V ( BU205)
. ...
i :i: ' —n rm
+C109
. High Speed : tf=0.75 /ts ( Typ.) _,
01.0-0.03
1

Glass Passivated Collector- Base Junct ion m

.

.
d
-H
3Q2±a2 o
.-i

1 &9±0.2

_, + 0.08 1

"1 ^\ N
|

04.0-0.15 N
1
X
MAXIMUM RATINGS (Ta=25°C) is -H

CHARACTERISTIC SYMBOL RATING UNIT k^

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Collector-Emitter BU204 1300 4a0MAX.

VCES V
Voltage (V B E=0V) BU205 1500 1.. BASE
BU204 1300 2. EMITTER
Collector-Emitter V COLLECTOR (CASE)
Voltage (RBE=100n) VCER
BU205 1500
JEDEC TO—
Transient BU204 VCE 1500 TC— 3, TB—
EIAJ
Collector-Emitter (Flash- V
Voltage (Flash-over) BU205 over) 1650 TOSHIBA 2— 21B1A
Collector-Emitter BU204 600 Weight : 17. Og
Voltage VCEO V
(Open Base) BU205 700
DC ic 2.5
Collector Current A
Peak I CM 3

Transient Collector Current ic

(Flash-over) (Flash- 5 A
over)
Base Current (Peak) IBM 2.5 A
DC -IB 100 mA
Reverse Base Current
Peak "IBM 1.5 A
Collector Power Dissipation
pc !0 W
(Tc^90°C)

Junction Temperature Tj 115 °C

Storage Temperature Range T stg -65-115 °C

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-1037-
BU204-BU205

ELECTRICAL CHARACTERISTICS (Ta=25°C)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ices Vbe =0 > v ce =vces - - 1 mA
DC Current Gain hFE Vce = 5V, I C =2A 2 - -

Emitter-Base - -
V(BR)EBO lE=100mA, I C =0 5 V
Breakdown Voltage

Collector-Emitter - -
VCE(sat) I C =2A, I B =1A 5 V
Saturation Voltage

Base-Emitter - -
V BE(sat) I C =2A, I B =1A 1.5 V
Saturation Voltage

Collector-Emitter BU204 600 - -

Sustaining Voltage VCEO(SUS) IC= 100mA, L=25mH V
BU205 700 - -

Fall Time tf I C p=2A, lB(end)=lA - 0.75 - /is

Collector Output Capacitance Cob V CB =10V, I E =0, f=lMHz - 95 - pF

Transition Frequency fT
Vce=5V, f=5MHz - - MHz
3
IC=0.1A

TOSHIBA CORPORATION

1038