FF1800R12IE5

PrimePACK™3+模块采用第五代沟槽栅/场终止IGBT5和第五代发射极控制二极管带有温度检测NTC
PrimePACK™3+modulewithTrench/FieldstopIGBT5,EmitterControlled5diodeandNTC

VCES = 1200V
IC nom = 1800A / ICRM = 3600A

典型应用 TypicalApplications
• 大功率变流器 • Highpowerconverters
• 电机传动 • Motordrives
• 太阳能应用 • Solarapplications
• UPS系统 • UPSsystems

电气特性 ElectricalFeatures
• 提高工作结温Tvjop • ExtendedoperatingtemperatureTvjop
• 高短路能力 • Highshort-circuitcapability
• 无与伦比的坚固性 • Unbeatablerobustness
• Tvjop=175°C • Tvjop=175°C
• 沟槽栅IGBT5 • TrenchIGBT5

机械特性 MechanicalFeatures
• 封装的CTI>400 • PackagewithCTI>400
• 高爬电距离和电气间隙 • Highcreepageandclearancedistances
• 高功率循环和温度循环能力 • Highpowerandthermalcyclingcapability
• 高功率密度 • Highpowerdensity

ModuleLabelCode
BarcodeCode128 ContentoftheCode Digit
ModuleSerialNumber 1-5
ModuleMaterialNumber 6-11
ProductionOrderNumber 12-19
DMX-Code
Datecode(ProductionYear) 20-21
Datecode(ProductionWeek) 22-23

Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V3.0

www.infineon.com 2017-06-28
FF1800R12IE5

IGBT,逆变器/IGBT,Inverter
最大额定值/MaximumRatedValues
集电极－发射极电压
Tvj = 25°C VCES  1200  V
Collector-emittervoltage
连续集电极直流电流
TC = 95°C, Tvj max = 175°C IC nom  1800  A
ContinuousDCcollectorcurrent
集电极重复峰值电流
tP = 1 ms ICRM  3600  A
Repetitivepeakcollectorcurrent
栅极－发射极峰值电压
VGES  +/-20  V
Gate-emitterpeakvoltage

特征值/CharacteristicValues min. typ. max.

集电极－发射极饱和电压 IC = 1800 A, VGE = 15 V Tvj = 25°C 1,70 2,15 V
Collector-emittersaturationvoltage IC = 1800 A, VGE = 15 V Tvj = 125°C VCE sat 2,00 2,45 V
IC = 1800 A, VGE = 15 V Tvj = 175°C 2,15 2,60 V
栅极阈值电压
IC = 49,0 mA, VCE = VGE, Tvj = 25°C VGEth 5,25 5,80 6,35 V
Gatethresholdvoltage
栅极电荷
VGE = -15 V ... +15 V, VCE = 600V QG 8,65 µC
Gatecharge
内部栅极电阻
Tvj = 25°C RGint 0,5 Ω
Internalgateresistor
输入电容
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 98,5 nF
Inputcapacitance
反向传输电容
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 3,90 nF
Reversetransfercapacitance
集电极-发射极截止电流
VCE = 1200 V, VGE = 0 V, Tvj = 25°C ICES 5,0 mA
Collector-emittercut-offcurrent
栅极-发射极漏电流
VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 400 nA
Gate-emitterleakagecurrent
开通延迟时间(电感负载) IC = 1800 A, VCE = 600 V Tvj = 25°C 0,24 µs
td on
Turn-ondelaytime,inductiveload VGE = ±15 V Tvj = 125°C 0,29 µs
RGon = 0,82 Ω Tvj = 175°C 0,31 µs
上升时间(电感负载) IC = 1800 A, VCE = 600 V Tvj = 25°C 0,19 µs
tr
Risetime,inductiveload VGE = ±15 V Tvj = 125°C 0,20 µs
RGon = 0,82 Ω Tvj = 175°C 0,20 µs
关断延迟时间(电感负载) IC = 1800 A, VCE = 600 V Tvj = 25°C 0,57 µs
td off
Turn-offdelaytime,inductiveload VGE = ±15 V Tvj = 125°C 0,63 µs
RGoff = 0,82 Ω Tvj = 175°C 0,66 µs
下降时间(电感负载) IC = 1800 A, VCE = 600 V Tvj = 25°C 0,10 µs
tf
Falltime,inductiveload VGE = ±15 V Tvj = 125°C 0,12 µs
RGoff = 0,82 Ω Tvj = 175°C 0,14 µs
开通损耗能量(每脉冲) IC = 1800 A, VCE = 600 V, LS = 30 nH Tvj = 25°C 130 mJ
Turn-onenergylossperpulse VGE = ±15 V, di/dt = 8150 A/µs (Tvj = 175°C) Tvj = 125°C Eon 195 mJ
RGon = 0,82 Ω Tvj = 175°C 235 mJ
关断损耗能量(每脉冲） IC = 1800 A, VCE = 600 V, LS = 30 nH Tvj = 25°C 210 mJ
Turn-offenergylossperpulse VGE = ±15 V, du/dt = 2350 V/µs (Tvj = 175°C) Tvj = 125°C Eoff 260 mJ
RGoff = 0,82 Ω Tvj = 175°C 290 mJ
短路数据 VGE ≤ 15 V, VCC = 900 V
ISC
SCdata VCEmax = VCES -LsCE ·di/dt tP ≤ 10 µs, Tvj = 175°C 6800 A
结－外壳热阻
每个IGBT/perIGBT RthJC 17,3 K/kW
Thermalresistance,junctiontocase
外壳－散热器热阻 每个IGBT/perIGBT
RthCH 11,4 K/kW
Thermalresistance,casetoheatsink λPaste=1W/(m·K)/λgrease=1W/(m·K)
在开关状态下温度
Tvj op -40 175 °C
Temperatureunderswitchingconditions

Datasheet 2 V3.0
2017-06-28
FF1800R12IE5

二极管,逆变器/Diode,Inverter
最大额定值/MaximumRatedValues
反向重复峰值电压
Tvj = 25°C VRRM  1200  V
Repetitivepeakreversevoltage
连续正向直流电流
IF  1800  A
ContinuousDCforwardcurrent
正向重复峰值电流
tP = 1 ms IFRM  3600  A
Repetitivepeakforwardcurrent
I2t-值 VR = 0 V, tP = 10 ms, Tvj = 125°C 760 kA²s
I²t  
I²t-value VR = 0 V, tP = 10 ms, Tvj = 175°C 720 kA²s

特征值/CharacteristicValues min. typ. max.

正向电压 IF = 1800 A, VGE = 0 V Tvj = 25°C 1,90 2,35 V
Forwardvoltage IF = 1800 A, VGE = 0 V Tvj = 125°C VF 1,75 2,20 V
IF = 1800 A, VGE = 0 V Tvj = 175°C 1,70 2,15 V
反向恢复峰值电流 IF = 1800 A, - diF/dt = 8700 A/µs (Tvj=175°C) Tvj = 25°C 810 A
Peakreverserecoverycurrent VR = 600 V Tvj = 125°C IRM 1150 A
VGE = -15 V Tvj = 175°C 1300 A
恢复电荷 IF = 1800 A, - diF/dt = 8700 A/µs (Tvj=175°C) Tvj = 25°C 175 µC
Recoveredcharge VR = 600 V Tvj = 125°C Qr 330 µC
VGE = -15 V Tvj = 175°C 435 µC
反向恢复损耗（每脉冲） IF = 1800 A, - diF/dt = 8700 A/µs (Tvj=175°C) Tvj = 25°C 79,0 mJ
Reverserecoveryenergy VR = 600 V Tvj = 125°C Erec 145 mJ
VGE = -15 V Tvj = 175°C 190 mJ
结－外壳热阻
每个二极管/perdiode RthJC 28,3 K/kW
Thermalresistance,junctiontocase
外壳－散热器热阻 每个二极管/perdiode
RthCH 13,2 K/kW
Thermalresistance,casetoheatsink λPaste=1W/(m·K)/λgrease=1W/(m·K)
在开关状态下温度
Tvj op -40 175 °C
Temperatureunderswitchingconditions

负温度系数热敏电阻/NTC-Thermistor
特征值/CharacteristicValues min. typ. max.
额定电阻值
TNTC = 25°C R25 5,00 kΩ
Ratedresistance
R100偏差
TNTC = 100°C, R100 = 493 Ω ∆R/R -5 5 %
DeviationofR100
耗散功率
TNTC = 25°C P25 20,0 mW
Powerdissipation
B-值
R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K
B-value
B-值
R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 3411 K
B-value
B-值
R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 3433 K
B-value
根据应用手册标定
Specificationaccordingtothevalidapplicationnote.

Datasheet 3 V3.0
2017-06-28
FF1800R12IE5

模块/Module
绝缘测试电压
RMS, f = 50 Hz, t = 1 min. VISOL  4,0  kV
Isolationtestvoltage
模块基板材料
 Cu 
Materialofmodulebaseplate
内部绝缘 基本绝缘(class1,IEC61140)
 Al2O3 
Internalisolation basicinsulation(class1,IEC61140)
爬电距离 端子至散热器/terminaltoheatsink 33,0
  mm
Creepagedistance 端子至端子/terminaltoterminal 33,0
电气间隙 端子至散热器/terminaltoheatsink 19,0
  mm
Clearance 端子至端子/terminaltoterminal 19,0
相对电痕指数
CTI  > 400 
Comperativetrackingindex
min. typ. max.
杂散电感,模块
LsCE 10 nH
Strayinductancemodule
模块引线电阻,端子-芯片 RCC'+EE' 0,10
TC=25°C,每个开关/perswitch mΩ
Moduleleadresistance,terminals-chip RAA'+CC' 0,09
储存温度
Tstg -40 150 °C
Storagetemperature
模块安装的安装扭距 螺丝M5根据相应的应用手册进行安装
M 3,00 6,00 Nm
Mountingtorqueformodulmounting ScrewM5-Mountingaccordingtovalidapplicationnote
端子联接扭距 螺丝M4根据相应的应用手册进行安装
1,8 - 2,1 Nm
Terminalconnectiontorque ScrewM4-Mountingaccordingtovalidapplicationnote
M
螺丝M8根据相应的应用手册进行安装
8,0 - 10 Nm
ScrewM8-Mountingaccordingtovalidapplicationnote
重量
G 1400 g
Weight

Höchstzulässige Bodenplattenbetriebstemperatur TBPmax = 150°C

Maximum baseplate operation temperature TBPmax = 150°C

Datasheet 4 V3.0
2017-06-28
FF1800R12IE5

输出特性IGBT,逆变器（典型) 输出特性IGBT,逆变器（典型)
outputcharacteristicIGBT,Inverter(typical) outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE) IC=f(VCE)
VGE=15V Tvj=175°C

3600 3600
Tvj = 25°C VGE = 20V
3300 Tvj = 125°C 3300 VGE = 15V
Tvj = 175°C VGE = 12V
VGE = 10V
3000 3000 VGE = 9V
VGE = 8V

2700 2700

2400 2400

2100 2100
IC [A]

IC [A]
1800 1800

1500 1500

1200 1200

900 900

600 600

300 300

0 0
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0
VCE [V] VCE [V]

传输特性IGBT,逆变器(典型) 开关损耗IGBT,逆变器（典型)
transfercharacteristicIGBT,Inverter(typical) switchinglossesIGBT,Inverter(typical)
IC=f(VGE) Eon=f(IC),Eoff=f(IC)
VCE=20V VGE=±15V,RGon=0.82Ω,RGoff=0.82Ω,VCE=600V

3600 800
Tvj = 25°C Eon, Tvj = 125°C
3300 Tvj = 125°C Eon, Tvj = 175°C
Tvj = 175°C Eoff, Tvj = 125°C
700 Eoff, Tvj = 175°C
3000

2700 600

2400
500
2100
E [mJ]
IC [A]

1800 400

1500
300
1200

900 200

600
100
300

0 0
5 6 7 8 9 10 11 12 13 0 600 1200 1800 2400 3000 3600
VGE [V] IC [A]

Datasheet 5 V3.0
2017-06-28
FF1800R12IE5

开关损耗IGBT,逆变器（典型) 瞬态热阻抗IGBT,逆变器
switchinglossesIGBT,Inverter(typical) transientthermalimpedanceIGBT,Inverter
Eon=f(RG),Eoff=f(RG) ZthJC=f(t)
VGE=±15V,IC=1800A,VCE=600V

1400 100
Eon, Tvj = 125°C ZthJC : IGBT
1300 Eon, Tvj = 175°C
Eoff, Tvj = 125°C
1200 Eoff, Tvj = 175°C

1100

1000
10
900

800

ZthJC [K/kW]
E [mJ]

700

600

500
1
400

300

200 i: 1 2 3 4
ri[K/kW]: 0,681 1,4 14,1 1,09
τi[s]: 0,001 0,00879 0,0446 0,872
100

0 0,1
0,0 1,0 2,0 3,0 4,0 5,0 6,0 7,0 8,0 0,001 0,01 0,1 1 10
RG [Ω] t [s]

反偏安全工作区IGBT,逆变器（RBSOA） 栅极电荷特性IGBT,逆变器（典型)
reversebiassafeoperatingareaIGBT,Inverter(RBSOA) gatechargecharacteristicIGBT,Inverter(typical)
IC=f(VCE) VGE=f(QG)
VGE=±15V,RGoff=0.82Ω,Tvj=175°C IC=1800A,Tvj=25°C

4000 15
IC, Modul VCC = 600V
IC, Chip
12
3500

9
3000
6

2500
3
VGE [V]
IC [A]

2000 0

-3
1500

-6
1000
-9

500
-12

0 -15
0 200 400 600 800 1000 1200 1400 0 1 2 3 4 5 6 7 8 9 10
VCE [V] QG [µC]

Datasheet 6 V3.0
2017-06-28
FF1800R12IE5

正向偏压特性二极管,逆变器（典型) 开关损耗二极管,逆变器（典型)
forwardcharacteristicofDiode,Inverter(typical) switchinglossesDiode,Inverter(typical)
IF=f(VF) Erec=f(IF)
RGon=0.82Ω,VCE=600V

3600 240
Tvj = 25°C Erec, Tvj = 125°C
3300 Tvj = 125°C 220 Erec, Tvj = 175°C
Tvj = 175°C

3000 200

2700 180

2400 160

2100 140

E [mJ]
IF [A]

1800 120

1500 100

1200 80

900 60

600 40

300 20

0 0
0,0 0,5 1,0 1,5 2,0 2,5 0 600 1200 1800 2400 3000 3600
VF [V] IF [A]

开关损耗二极管,逆变器（典型) 瞬态热阻抗二极管,逆变器
switchinglossesDiode,Inverter(typical) transientthermalimpedanceDiode,Inverter
Erec=f(RG) ZthJC=f(t)
IF=1800A,VCE=600V

220 100
Erec, Tvj = 125°C ZthJC : Diode
Erec, Tvj = 175°C
200

180

160

140
ZthJC [K/kW]

120
E [mJ]

10
100

80

60

40
i: 1 2 3 4
ri[K/kW]: 1,08 9,59 15 2,58
20 τi[s]: 0,000917 0,0207 0,0658 0,824

0 1
0,0 1,0 2,0 3,0 4,0 5,0 6,0 7,0 8,0 0,001 0,01 0,1 1 10
RG [Ω] t [s]

Datasheet 7 V3.0
2017-06-28
FF1800R12IE5

负温度系数热敏电阻温度特性
NTC-Thermistor-temperaturecharacteristic(typical)
R=f(T)

100000
Rtyp

10000
R[Ω]

1000

100
0 25 50 75 100 125 150
TNTC [°C]

Datasheet 8 V3.0
2017-06-28
 FF1800R12IE5

接线图/Circuitdiagram

封装尺寸/Packageoutlines
8 7 6 5 4 3 2 1

36 0,2 (2x) 8 0,1 (8x) 18 0,2 (4x)

250 1

224
E 187
recommended design height lower side 150
bus bar to baseplate 113
76
screwing depth 58 M8 (8x) 5,5 - 0,2 (14x)
38,25 0,25 max. 8mm (8x) 0,8 A B C 0,5 A B C
24
7,5 + 0,5 8x 14x
6

10 (6x)
D max. 3

73
0,3

0,5
23,6

89
screwing depth

39
37

max. 16mm (8x)

3,8 (8x)

(2x)
(2x)
0,3
20,6

0,3
0,3

22,1
25,1

C
(8x)

max. 2 ( 5,5) M4 (8x)

0,8 A B C ( 5,5)
0,3

B
26 0,25 C
11,8

14 8x
recommended design height lower side 25
PCB to baseplate 39
64
78
92
B 103
117
156
195
234

Kanten: Zul. Abweichung: Oberfl che: Ma stab: 1 : 1 Mat.-Nr.: 36002 ba

ISO 13715 ISO 2768 - mK EN ISO 1302 Werkstoff:
Dokumentstatus: Serienfreigabe
Datum Name Benennung:
Bearb. 16.03.2015 EU\froebusd

A
Gepr. 17.06.2015
Norm
EU\noellem Modul
Datenblattskizze PP3+
Revision: Blat
02 Korrektur 21.10.2015 R M
01 Korrektur 26.08.2015 R M D00062172 02
Revision nderungen Datum Name Modell: A00062169 Ersatz f r: D00046423_00 Ersetzt durch:
8 7 6 5 4 3 2 1
Alle Rechte bei INFINEON TECHNOLOGIES AG , auch f r den Fall von Schutzrechtanmeld

Datasheet 9 V3.0
2017-06-28
Trademarks
Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.




Edition2017-06-28 ©2017InfineonTechnologiesAG.
AllRightsReserved.
Publishedby
InfineonTechnologiesAG Doyouhaveaquestionaboutthisdocument?
81726München,Germany Email:erratum@infineon.com



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