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4N35 - Fotoacoplador
4N35 - Fotoacoplador
Vishay Semiconductors
Features
• Isolation Test Voltage 5300 VRMS
• Interfaces with common logic families A 1 6 B
• Input-output coupling capacitance < 0.5 pF
C 2 5 C
• Industry Standard Dual-in line 6-pin package
• Lead-free component NC 3 4 E
Agency Approvals
i179004
e3 Pb
Pb-free
Input
Parameter Test condition Symbol Value Unit
Reverse voltage VR 6.0 V
Forward current IF 60 mA
Surge current ≤ 10 µs IFSM 2.5 A
Power dissipation Pdiss 100 mW
Output
Parameter Test condition Symbol Value Unit
Collector-emitter breakdown VCEO 70 V
voltage
Emitter-base breakdown VEBO 7.0 V
voltage
Collector current IC 50 mA
(t ≤ 1.0 ms) IC 100 mA
Power dissipation Pdiss 150 mW
Coupler
Parameter Test condition Symbol Value Unit
Isolation test voltage VISO 5300 VRMS
Creepage ≥ 7.0 mm
Clearance ≥ 7.0 mm
Isolation thickness between ≥ 0.4 mm
emitter and detector
Comparative tracking index per 175
DIN IEC 112/VDE0303,part 1
Isolation resistance VIO = 500 V, Tamb = 25 °C RIO 1012 Ω
VIO = 500 V, Tamb = 100 °C RIO 1011 Ω
Storage temperature Tstg - 55 to + 150 °C
Operating temperature Tamb - 55 to + 100 °C
Junction temperature Tj 100 °C
Soldering temperature max. 10 s dip soldering: Tsld 260 °C
distance to seating plane
≥ 1.5 mm
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Test condition Symbol Min Typ. Max Unit
Forward voltage1) IF = 10 mA VF 1.3 1.5 V
IF = 10 mA, Tamb = - 55 °C VF 0.9 1.3 1.7 V
Reverse current1) VR = 6.0 V IR 0.1 10 µA
Capacitance VR = 0, f = 1.0 MHz CO 25 pF
1) Indicates JEDEC registered value
Output
Parameter Test condition Part Symbol Min Typ. Max Unit
Collector-emitter breakdown IC = 1.0 mA 4N35 BVCEO 30 V
voltage1)
4N36 BVCEO 30 V
4N37 BVCEO 30 V
4N38 BVCEO 80 V
Emitter-collector breakdown IE = 100 µA BVECO 7.0 V
voltage1)
Collector-base breakdown IC = 100 µA, IB = 1.0 µA 4N35 BVCBO 70 V
voltage1)
4N36 BVCBO 70 V
4N37 BVCBO 70 V
4N38 BVCBO 80 V
Collector-emitter leakage VCE = 10 V, IF = 0 4N35 ICEO 5.0 50 nA
current1)
4N36 ICEO 5.0 50 nA
VCE = 10 V, IF=0 4N37 ICEO 5.0 50 nA
VCE = 60 V, IF = 0 4N38 ICEO 50 nA
VCE = 30 V, IF = 0, Tamb = 4N35 ICEO 500 µA
100 °C
4N36 ICEO 500 µA
4N37 ICEO 500 µA
VCE = 60 V, IF = 0, Tamb = 4N38 ICEO 6.0 µA
100 °C
Collector-emitter capacitance VCE = 0 CCE 6.0 pF
1)
Indicates JEDEC registered value
Coupler
Parameter Test condition Symbol Min Typ. Max Unit
Resistance, input to output1) VIO = 500 V RIO 1011 Ω
Capacitance (input-output) f = 1.0 MHz CIO 0.5 pF
1)
Indicates JEDEC registered value
Switching Characteristics
Parameter Test condition Symbol Min Typ. Max Unit
Switching time1) IC = 2 mA, RL = 100 Ω, VCC = 10 V ton, toff 10 µs
1) Indicates JEDEC registered value
1.4 1.5
Normalized to:
1.3 Vce=10 V, IF=10 mA, TA=25°C
TA = –55°C CTRce(sat) Vce=0.4 V
NCTR - Normlized CTR
VF - Forward Voltage - V
1.2
1.0
TA = 25°C
1.1 TA=25°C
1.0
0.9 0.5
TA = 85°C
0.8 NCTR(SAT)
NCTR
0.7
0.0
.1 1 10 100 0 1 10 100
IF - Forward Current - mA IF - LED Current - mA
i4n25_01 i4n25_02
Figure 1. Forward Voltage vs. Forward Current Figure 2. Normalized Non-Saturated and Saturated CTR vs. LED
Current
1.5 35
Normalized to:
Vce=10 V, IF=10 mA, TA=25°C 30
CTRce(sat) Vce=0.4 V
25
1.0 50°C
TA=50°C 20
70°C
15
25°C 85°C
0.5
10
NCTR(SAT)
5
NCTR
0.0 0
.1 1 10 100 0 10 20 30 40 50 60
IF- LED Current - mA IF - LED Current - mA
i4n25_03 i4n25_06
Figure 3. Normalized Non-saturated and Saturated CTR vs. LED Figure 6. Collector-Emitter Current vs. Temperature and LED
Current Current
1.5 5
Normalized to: 10
Vce=10 V, IF=10 mA, TA=25°C 4
NCTR - Normalized CTR
Iceo - Collector-Emitter - nA
10
CTRce(sat) Vce=0.4 V
3
1.0 10
TA=70°C
10 2
1 Vce = 10 V
10
0.5 Typical
0
NCTR(SAT) 10
NCTR 10 –1
0.0
.1 1 10 100 10 –2
–20 0 20 40 60 80 100
IF - LED Current - mA
TA - Ambient Temperature - °C
i4n25_04 i4n25_07
Figure 4. Normalized Non-saturated and saturated CTR vs. LED Figure 7. Collector-Emitter Leakage Current vs.Temp.
Current
1.5 1.5
Normalized to: Normalized to:
NCTRcb - Normalized CTRcb
1.0 1.0
TA=85°C
0.5 0.5
25°C
NCTR(SAT) 50°C
NCTR 70°C
0.0 0.0
.1 1 10 100 .1 1 10 100
IF - LED Current - mA IF - LED Current - mA
i4n25_05 i4n25_08
Figure 5. Normalized Non-saturated and saturated CTR vs. LED Figure 8. Normalized CTRcb vs. LED Current and Temp.
Current
10 1000 2.5
Normalized to: IF =10 mA,TA=25°C
tPHL
100 2.0
1
10 1.5
0.1
Nib, TA=–20°C tPLH
Nib, TA= 25°C
Nib, TA= 50°C
Nib, TA= 70°C 1 1.0
0.01 .1 1 10 100
.1 1 10 100
RL - Collector Load Resistor - kΩ
i4n25_09 IF - LED Current - mA i4n25_12
Figure 9. Normalized Photocurrent vs. IF and Temp. Figure 12. Propagation Delay vs. Collector Load Resistor
1.2
70°C
IF
NHFE - Normalized HFE
1.0
25°C
–20°C
0.8 tD
VO tR
Normalized to: tPLH
Ib=20 µA, Vce=10 V, TA=25°C
0.6 VTH=1.5 V
tPHL tS tF
0.4
1 10 100 1000
Ib - Base Current - µA
i4n25_10 i4n25_13
Figure 10. Normalized Non-saturated HFE vs. Base Current and Figure 13. Switching Timing
Temperature
NHFE(sat) - Normalized Saturated HFE
1.5
Normalized to:
Vce=10 V, Ib=20 µA VCC = 5.0 V
70°C 50°C T A =25°C
1.0
F=10 KHz, RL
25°C DF=50%
–20°C VO
0.5
IF=1 0 mA
Vce=0.4 V
0.0
1 10 100 1000
i4n25_11 Ib - Base Current - µA i4n25_14
Figure 11. Normalized HFE vs. Base Current and Temp. Figure 14. Switching Schematic
14770
pin one ID
3 2 1
.248 (6.30)
.256 (6.50)
4 5 6 ISO Method A
.335 (8.50)
.343 (8.70)
.300 (7.62)
.039 .048 (0.45)
.022 (0.55) typ.
(1.00)
Min.
.130 (3.30)
.150 (3.81)
4° 18°
typ. .114 (2.90)
.031 (0.80) min. .130 (3.0)
3°–9° .010 (.25)
.031 (0.80) typ.
.018 (0.45) .035 (0.90)
.022 (0.55) .300–.347
.100 (2.54) typ. (7.62–8.81)
i178004