4N35/ 4N36/ 4N37/ 4N38

Vishay Semiconductors

Optocoupler, Phototransistor Output, With Base Connection

Features
• Isolation Test Voltage 5300 VRMS
• Interfaces with common logic families A 1 6 B
• Input-output coupling capacitance < 0.5 pF
C 2 5 C
• Industry Standard Dual-in line 6-pin package
• Lead-free component NC 3 4 E

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Agency Approvals
i179004
e3 Pb
Pb-free

• Underwriters Laboratory File #E52744

• DIN EN 60747-5-2 (VDE0884) These isolation processes and the Vishay ISO9001
DIN EN 60747-5-5 pending quality program results in the highest isolation perfor-
Available with Option 1 mance available for a commecial plastic phototransis-
tor optocoupler.
Applications The devices are available in lead formed configura-
AC mains detection tion suitable for surface mounting and are available
either on tape and reel, or in standard tube shipping
Reed relay driving
containers.
Switch mode power supply feedback
Note:
Telephone ring detection
Designing with data sheet is cover in Application Note 45
Logic ground isolation
Logic coupling with high frequency noise rejection
Order Information
Part Remarks
Description
4N35 CTR > 100 %, DIP-6
This data sheet presents five families of Vishay Indus-
try Standard Single Channel Phototransistor Cou- 4N36 CTR > 100 %, DIP-6
plers.These families include the 4N35/ 4N36/ 4N37/ 4N37 CTR > 100 %, DIP-6
4N38 couplers. 4N38 CTR > 20 %, DIP-6
Each optocoupler consists of gallium arsenide infra- 4N35-X006 CTR > 100 %, DIP-6 400 mil (option 6)
red LED and a silicon NPN phototransistor. 4N35-X007 CTR > 100 %, SMD-6 (option 7)
These couplers are Underwriters Laboratories (UL) 4N35-X009 CTR > 100 %, SMD-6 (option 9)
listed to comply with a 5300 VRMS isolation test volt- 4N36-X007 CTR > 100 %, SMD-6 (option 7)
age.
4N36-X009 CTR > 100 %, SMD-6 (option 9)
This isolation performance is accomplished through
4N37-X006 CTR > 100 %, DIP-6 400 mil (option 6)
Vishay double molding isolation manufacturing pro-
cess. Comliance to DIN EN 60747-5-2(VDE0884)/ 4N37-X009 CTR > 100 %, SMD-6 (option 9)
DIN EN 60747-5-5 pending partial discharge isolation For additional information on the available options refer to
specification is available for these families by ordering Option Information.
option 1.

Document Number 83717 www.vishay.com

Rev. 1.5, 27-Jan-05 1
4N35/ 4N36/ 4N37/ 4N38
Vishay Semiconductors

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.

Input
Parameter Test condition Symbol Value Unit
Reverse voltage VR 6.0 V
Forward current IF 60 mA
Surge current ≤ 10 µs IFSM 2.5 A
Power dissipation Pdiss 100 mW

Output
Parameter Test condition Symbol Value Unit
Collector-emitter breakdown VCEO 70 V
voltage
Emitter-base breakdown VEBO 7.0 V
voltage
Collector current IC 50 mA
(t ≤ 1.0 ms) IC 100 mA
Power dissipation Pdiss 150 mW

Coupler
Parameter Test condition Symbol Value Unit
Isolation test voltage VISO 5300 VRMS
Creepage ≥ 7.0 mm
Clearance ≥ 7.0 mm
Isolation thickness between ≥ 0.4 mm
emitter and detector
Comparative tracking index per 175
DIN IEC 112/VDE0303,part 1
Isolation resistance VIO = 500 V, Tamb = 25 °C RIO 1012 Ω
VIO = 500 V, Tamb = 100 °C RIO 1011 Ω
Storage temperature Tstg - 55 to + 150 °C
Operating temperature Tamb - 55 to + 100 °C
Junction temperature Tj 100 °C
Soldering temperature max. 10 s dip soldering: Tsld 260 °C
distance to seating plane
≥ 1.5 mm

www.vishay.com Document Number 83717

2 Rev. 1.5, 27-Jan-05
 4N35/ 4N36/ 4N37/ 4N38
Vishay Semiconductors

Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.

Input
Parameter Test condition Symbol Min Typ. Max Unit
Forward voltage1) IF = 10 mA VF 1.3 1.5 V
IF = 10 mA, Tamb = - 55 °C VF 0.9 1.3 1.7 V
Reverse current1) VR = 6.0 V IR 0.1 10 µA
Capacitance VR = 0, f = 1.0 MHz CO 25 pF
1) Indicates JEDEC registered value

Output
Parameter Test condition Part Symbol Min Typ. Max Unit
Collector-emitter breakdown IC = 1.0 mA 4N35 BVCEO 30 V
voltage1)
4N36 BVCEO 30 V
4N37 BVCEO 30 V
4N38 BVCEO 80 V
Emitter-collector breakdown IE = 100 µA BVECO 7.0 V
voltage1)
Collector-base breakdown IC = 100 µA, IB = 1.0 µA 4N35 BVCBO 70 V
voltage1)
4N36 BVCBO 70 V
4N37 BVCBO 70 V
4N38 BVCBO 80 V
Collector-emitter leakage VCE = 10 V, IF = 0 4N35 ICEO 5.0 50 nA
current1)
4N36 ICEO 5.0 50 nA
VCE = 10 V, IF=0 4N37 ICEO 5.0 50 nA
VCE = 60 V, IF = 0 4N38 ICEO 50 nA
VCE = 30 V, IF = 0, Tamb = 4N35 ICEO 500 µA
100 °C
4N36 ICEO 500 µA
4N37 ICEO 500 µA
VCE = 60 V, IF = 0, Tamb = 4N38 ICEO 6.0 µA
100 °C
Collector-emitter capacitance VCE = 0 CCE 6.0 pF
1)
Indicates JEDEC registered value

Coupler
Parameter Test condition Symbol Min Typ. Max Unit
Resistance, input to output1) VIO = 500 V RIO 1011 Ω
Capacitance (input-output) f = 1.0 MHz CIO 0.5 pF
1)
Indicates JEDEC registered value

Document Number 83717 www.vishay.com

Rev. 1.5, 27-Jan-05 3
4N35/ 4N36/ 4N37/ 4N38
Vishay Semiconductors

Current Transfer Ratio

Parameter Test condition Part Symbol Min Typ. Max Unit
DC Current Transfer Ratio1) VCE = 10 V, IF = 10 mA 4N35 CTRDC 100 %
4N36 CTRDC 100 %
4N37 CTRDC 100 %
VCE = 10 V, IF = 20 mA 4N38 CTRDC 20 %
VCE = 10 V, IF = 10 mA, 4N35 CTRDC 40 50 %
TA = - 55 to + 100 °C
4N36 CTRDC 40 50 %
4N37 CTRDC 40 50 %
4N38 CTRDC 30 %
1)
Indicates JEDEC registered value

Switching Characteristics
Parameter Test condition Symbol Min Typ. Max Unit
Switching time1) IC = 2 mA, RL = 100 Ω, VCC = 10 V ton, toff 10 µs
1) Indicates JEDEC registered value

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

1.4 1.5
Normalized to:
1.3 Vce=10 V, IF=10 mA, TA=25°C
TA = –55°C CTRce(sat) Vce=0.4 V
NCTR - Normlized CTR
VF - Forward Voltage - V

1.2
1.0
TA = 25°C
1.1 TA=25°C

1.0

0.9 0.5
TA = 85°C
0.8 NCTR(SAT)
NCTR
0.7
0.0
.1 1 10 100 0 1 10 100
IF - Forward Current - mA IF - LED Current - mA
i4n25_01 i4n25_02

Figure 1. Forward Voltage vs. Forward Current Figure 2. Normalized Non-Saturated and Saturated CTR vs. LED
Current

www.vishay.com Document Number 83717

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 4N35/ 4N36/ 4N37/ 4N38
Vishay Semiconductors

1.5 35
Normalized to:
Vce=10 V, IF=10 mA, TA=25°C 30

Ice - Collector Current - mA

NCTR - Normalized CTR

CTRce(sat) Vce=0.4 V
25
1.0 50°C
TA=50°C 20
70°C
15
25°C 85°C
0.5
10
NCTR(SAT)
5
NCTR
0.0 0
.1 1 10 100 0 10 20 30 40 50 60
IF- LED Current - mA IF - LED Current - mA
i4n25_03 i4n25_06

Figure 3. Normalized Non-saturated and Saturated CTR vs. LED Figure 6. Collector-Emitter Current vs. Temperature and LED
Current Current

1.5 5
Normalized to: 10
Vce=10 V, IF=10 mA, TA=25°C 4
NCTR - Normalized CTR

Iceo - Collector-Emitter - nA
10
CTRce(sat) Vce=0.4 V
3
1.0 10
TA=70°C
10 2
1 Vce = 10 V
10
0.5 Typical
0
NCTR(SAT) 10
NCTR 10 –1
0.0
.1 1 10 100 10 –2
–20 0 20 40 60 80 100
IF - LED Current - mA
TA - Ambient Temperature - °C
i4n25_04 i4n25_07

Figure 4. Normalized Non-saturated and saturated CTR vs. LED Figure 7. Collector-Emitter Leakage Current vs.Temp.
Current

1.5 1.5
Normalized to: Normalized to:
NCTRcb - Normalized CTRcb

Vce=10 V, IF=10 mA, TA=25°C Vcb=9.3 V, IF=10 mA, TA=25°C

NCTR - Normalized CTR

CTRce(sat) Vce = 0.4 V

1.0 1.0
TA=85°C

0.5 0.5
25°C
NCTR(SAT) 50°C
NCTR 70°C

0.0 0.0
.1 1 10 100 .1 1 10 100
IF - LED Current - mA IF - LED Current - mA
i4n25_05 i4n25_08

Figure 5. Normalized Non-saturated and saturated CTR vs. LED Figure 8. Normalized CTRcb vs. LED Current and Temp.
Current

Document Number 83717 www.vishay.com

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4N35/ 4N36/ 4N37/ 4N38
Vishay Semiconductors

10 1000 2.5
Normalized to: IF =10 mA,TA=25°C

tPHL - Propagation Delay - µs

tPLH - Propagation Delay - µs
IF=10 mA, TA=25°C VCC =5.0 V, Vth=1.5 V
Normalized Photocurrent

tPHL
100 2.0
1

10 1.5
0.1
Nib, TA=–20°C tPLH
Nib, TA= 25°C
Nib, TA= 50°C
Nib, TA= 70°C 1 1.0
0.01 .1 1 10 100
.1 1 10 100
RL - Collector Load Resistor - kΩ
i4n25_09 IF - LED Current - mA i4n25_12

Figure 9. Normalized Photocurrent vs. IF and Temp. Figure 12. Propagation Delay vs. Collector Load Resistor

1.2
70°C
IF
NHFE - Normalized HFE

1.0
25°C
–20°C
0.8 tD
VO tR
Normalized to: tPLH
Ib=20 µA, Vce=10 V, TA=25°C
0.6 VTH=1.5 V

tPHL tS tF
0.4
1 10 100 1000
Ib - Base Current - µA
i4n25_10 i4n25_13

Figure 10. Normalized Non-saturated HFE vs. Base Current and Figure 13. Switching Timing
Temperature
NHFE(sat) - Normalized Saturated HFE

1.5
Normalized to:
Vce=10 V, Ib=20 µA VCC = 5.0 V
70°C 50°C T A =25°C
1.0
F=10 KHz, RL
25°C DF=50%

–20°C VO
0.5
IF=1 0 mA
Vce=0.4 V

0.0
1 10 100 1000
i4n25_11 Ib - Base Current - µA i4n25_14

Figure 11. Normalized HFE vs. Base Current and Temp. Figure 14. Switching Schematic

www.vishay.com Document Number 83717

6 Rev. 1.5, 27-Jan-05
 4N35/ 4N36/ 4N37/ 4N38
Vishay Semiconductors

Package Dimensions in Inches (mm)

For 4N35/36/37/38..... see DIL300-6 Package dimension in the Package Section.
For products with an option designator (e.g. 4N35-X006 or 4N36-X007)..... see DIP-6 Package dimensions in the Package Section.

DIL300-6 Package Dimensions

14770

DIP-6 Package Dimensions

pin one ID
3 2 1

.248 (6.30)
.256 (6.50)

4 5 6 ISO Method A

.335 (8.50)
.343 (8.70)
.300 (7.62)
.039 .048 (0.45)
.022 (0.55) typ.
(1.00)
Min.
.130 (3.30)
.150 (3.81)
4° 18°
typ. .114 (2.90)
.031 (0.80) min. .130 (3.0)
3°–9° .010 (.25)
.031 (0.80) typ.
.018 (0.45) .035 (0.90)
.022 (0.55) .300–.347
.100 (2.54) typ. (7.62–8.81)
i178004

Document Number 83717 www.vishay.com

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4N35/ 4N36/ 4N37/ 4N38
Vishay Semiconductors

Option 6 Option 7 Option 9

.407 (10.36) .300 (7.62) .375 (9.53)
.391 (9.96) TYP. .395 (10.03)
.307 (7.8)
.291 (7.4) .300 (7.62)
ref.
.028 (0.7)
MIN. .180 (4.6)
.160 (4.1) .0040 (.102)
.0098 (.249) .012 (.30) typ.
.315 (8.0)
MIN.
.020 (.51)
.014 (0.35) .331 (8.4) .040 (1.02)
15° max.
.010 (0.25) MIN. .315 (8.00)
.400 (10.16) min.
.430 (10.92) .406 (10.3)
MAX. 18450

www.vishay.com Document Number 83717

8 Rev. 1.5, 27-Jan-05
 4N35/ 4N36/ 4N37/ 4N38
Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

Document Number 83717 www.vishay.com

Rev. 1.5, 27-Jan-05 9