Fast Recovery MEO 550-02 DA VRRM = 200 V

Epitaxial Diode IFAVM = 582 A

(FRED) Module trr = 150 ns

3 1 3
VRSM VRRM Type
1
V V

200 200 MEO 550-02DA

Symbol Test Conditions Maximum Ratings

IFRMS TC = 75°C 822 A Features
IFAVM ÿÿ① TC = 75°C; rectangular, d = 0.5 582 A ●
International standard package
IFRM tP < 10 ms; rep. rating, pulse width limited by TVJM 2880 A with DCB ceramic base plate
IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 4800 A ●
Planar passivated chips
t = 8.3 ms (60 Hz), sine 5280 A ●
Short recovery time
TVJ = 150°C; t = 10 ms (50 Hz), sine 4320 A
●
Low switching losses
t = 8.3 ms (60 Hz), sine 4750 A ●
Soft recovery behaviour
2
It TVJ = 45°C; t = 10 ms (50 Hz), sine 115200 As 2
●
Isolation voltage 3600 V~
t = 8.3 ms (60 Hz), sine 117100 A2s
●
UL registered E 72873
TVJ = 150°C; t = 10 ms (50 Hz), sine 93300 A2s Applications
t = 8.3 ms (60 Hz), sine 94800 A2s ●
Antiparallel diode for high frequency
TVJ -40...+150 °C switching devices
Tstg -40...+125 °C ●
Free wheeling diode in converters
TSmax 110 °C and motor control circuits
Ptot TC = 25°C 1750 W ●
Inductive heating and melting
VISOL 50/60 Hz, RMS t = 1 min 3000 V~
●
Uninterruptible power supplies (UPS)
IISOL £ 1 mA t=1s 3600 V~ ●
Ultrasonic cleaners and welders
Md Mounting torque (M6) 2.25-2.75/20-25 Nm/lb.in. Advantages
Terminal connection torque (M6) 4.50-5.50/40-48 Nm/lb.in. ●
High reliability circuit operation
dS Creep distance on surface 12.7 mm ●
Low voltage peaks for reduced
dA Strike distance through air 9.6 mm protection circuits
a Maximum allowable acceleration 50 m/s2 ●
Low noise switching
Weight 150 g ●
Low losses
Symbol Test Conditions Characteristic Values (per diode)
Dimensions in mm (1 mm = 0.0394")
typ. max.
IR TVJ = 25°C VR = VRRM 5 mA
TVJ = 25°C VR = 0.8 • VRRM 4 mA
TVJ = 125°C VR = 0.8 • VRRM 160 mA
VF IF = 300 A; TVJ = 125°C 0.84 V
TVJ = 25°C 1.10 V
IF = 520 A; TVJ = 125°C 1.08 V
TVJ = 25°C 1.25 V
VT0 For power-loss calculations only 0.52 V
rT 1.06 mW
RthJH DC current 0.114 K/W
RthJC DC current 0.071 K/W
trr IF = 500 A TVJ = 100°C 150 200 ns
IRM VR= 100 V TVJ = 25°C 9 A
-di/dt = 200 A/ms TVJ = 100°C 15 A

① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.6 VRRM, duty cycle d = 0.5
Data according to IEC 60747
911

IXYS reserves the right to change limits, test conditions and dimensions

© 2000 IXYS All rights reserved 1-2

 MEO 550-02 DA

800 3.0 60
A T = 100°C TVJ= 100°C
mC VVJ= 100V A VR = 100V
700 R
2.5 50
Qr IF=1100A
600 IF= 550A IRM
IF IF=1100A
2.0 IF= 275A 40 IF= 550A
500
IF= 275A
TVJ=125°C
400 1.5 30
TVJ= 25°C
300
1.0 20
200
0.5 10
100

0 0.0 0
0.0 0.5 1.0 V 1.5 100 A/ms 1000 0 200 400 600 A/ ms 1000
800
VF -diF/dt -diF/dt
Fig. 1 Forward current IF versus Fig. 2 Typ. reverse recovery Fig. 3 Typ. peak reverse current IRM
max. voltage drop VF per leg charge Qr versus -diF/dt versus -diF/dt

2.0 220 60 6
TVJ= 100°C TVJ= 100°C
ns VR = 100V IF = 550A µs
200 V 5
VFR VFR
1.5 trr tfr
Kf 180 40 4
tfr

1.0 160 3
IRM IF=1100A
IF= 550A
140 IF= 275A 20 2
0.5
Qr
120 1

0.0 100 0 0
0 40 80 120 °C 160 0 200 400 600 ms 1000
800
A/ 0 200 400 600 A/ ms 1000
800
TVJ -diF/dt diF/dt
Fig. 4 Dynamic parameters Qr, IRM Fig. 5 Typ. recovery time trr Fig. 6 Typ. peak forward voltage VFR
versus junction temperature TVJ versus -diF/dt and tfr versus diF/dt

1
Constants for ZthJS calculation:
K/W
i Rthi (K/W) ti (s)
1 0.001 0.08
0.1 2 0.004 0.024
ZthJH
thJS
3 0.027 0.112
4 0.082 0.464

0.01

MEO 550-02
0.001
0.001 0.01 0.1 1 s 10
t
Fig. 7 Transient thermal impedance junction to heatsink

© 2000 IXYS All rights reserved 2-2