Ordering number : EN7451A 2SC5793

SANYO Semiconductors
DATA SHEET
NPN Triple Diffused Planar Silicon Transistor

2SC5793 Ultrahigh-Definition CRT Display

Horizontal Deflection Output Applications
Features
• High speed.
• High breakdown voltage (VCBO=1600V).
• High reliability (Adoption of HVP process).
• Adoption of MBIT process.

Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO 1600 V
Collector-to-Emitter Voltage VCEO 800 V
Emitter-to-Base Voltage VEBO 5 V
Collector Current IC 20 A
Collector Current (Pulse) ICP 40 A
3.0 W
Collector Dissipation PC
Tc=25°C 95 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C

Electrical Characteristics at Ta=25°C

Ratings
Parameter Symbol Conditions Unit
min typ max
Collector Cutoff Current ICBO VCB=800V, IE=0A 10 µA
Collector Cutoff Current ICES VCE=1600V, RBE=0Ω 1.0 mA
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=10mA, RBE=∞ 800 V
Emitter Cutoff Current IEBO VEB=4V, IC=0A 1.0 mA
hFE1 VCE=5V, IC=1A 10
DC Current Gain
hFE2 VCE=5V, IC=15A 4 7
Continued on next page.

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

13107KD TI IM TC-00000483 / 31504 TS IM TA-100375 No.7451-1/4

 2SC5793
Continued from preceding page.
Ratings
Parameter Symbol Conditions Unit
min typ max
Collector-to-Emitter Saturation Voltage VCE(sat) IC=13.5A, IB=3.4A 3 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=13.5A, IB=3.4A 1.5 V
Storage Time tstg IC=10A, IB1=1.6A, IB2=--5A 3.0 µs
Fall Time tf IC=10A, IB1=1.6A, IB2=--5A 0.2 µs

Package Dimensions Switching Time Test Circuit

unit : mm (typ)
7504-001
IB1
PW=20µs
3.4 OUTPUT
16.0 5.6 D.C.≤1% IB2
3.1
INPUT
5.0

VR RB
8.0

RL=20Ω
22.0

50Ω
21.0

+ +
0.8

100µF 470µF
4.0

2.8
2.0 2.1 VBE= --5V VCC=200V
20.4

0.7 0.9

1 2 3
5.45 1 : Base
2 : Collector
3.5

3 : Emitter
5.45
SANYO : TO-3PMLH

IC -- VCE IC -- VBE
16 20
VCE=5V
18
14 1.4A
1.8A 1.6A
2.0A 16
Collector Current, IC -- A

Collector Current, IC -- A

12
14
1.2A
10
1.0A 12
0.8A
8 10
0.6A
8
6 0.4A
°C

6
120

0.2A
25°C

4
C
Ta=

--40°

4
0.1A
2
2
IB=0A
0 0
0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-to-Emitter Voltage, VCE -- V IT03573 Base-to-Emitter Voltage, VBE -- V IT03574
hFE -- IC VCE(sat) -- IC
100 10
VCE=5V 7 IC / IB=5
0°C

7
5
Ta= --4

5
Saturation Voltage, VCE(sat) -- V

25°C

3
Ta=120°C 2
3
DC Current Gain, hFE

2 25°C 1.0
C

7
120°

--40°C 5
Collector-to-Emitter

10 3
7 2

5 0.1
Ta= --40°C
7
3 5 120°C
25°C
2 3
2

1.0 0.01
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5
Collector Current, IC -- A IT03575 Collector Current, IC -- A IT03576

No.7451-2/4
 2SC5793
SW Time -- IC SW Time -- IB2
10 10
VCC=200V VCC=200V
7 7
IC / IB1=6 IC=10A
5 tstg 5 IB1=1.6A
IB2 / IB1=3
Switching Time, SW Time -- µs

Switching Time, SW Time -- µs

tst
g R load
R load 3
3

2 2
tf
1.0 1.0
7 7
5 5

3 tf 3

2 2

0.1 0.1
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 0.1 2 3 5 7 1.0 2 3 5 7 1.0
Collector Current, IC -- A IT03577 Base Current, IB2 -- A IT03578
Forward Bias A S O Reverse Bias A S O
100 100
7 ICP=40A 7 L=100µH
5
3
5 IB2= --4A
IC=20A
Tc=25°C
10

2 3
30
0µ

PC Single pulse

Collector Current, IC -- A
Collector Current, IC -- A

0µ 2
s

10 =9
7 5W s
1m

5 10
10

3 7
ms

2 5
1.0 3
7 D
5 C 2
3 op
2
er 1.0
at
io 7
0.1 n
5
7
5 3
3
2
Tc=25°C 2

0.01
Single pulse 0.1
1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 100 2 3 5 7 1000 2 3
Collector-to-Emitter Voltage, VCE -- V IT03579 Collector-to-Emitter Voltage, VCE -- V IT03580
PC -- Ta PC -- Tc
4.0 100
95
90
3.5
Collector Dissipation, PC -- W

Collector Dissipation, PC -- W

80
3.0
70
2.5
60
No
2.0 he 50
at
sin
k 40
1.5
30
1.0
20
0.5
10

0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C IT03581 Case Temperature, Tc -- °C IT03582

No.7451-3/4
 2SC5793

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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
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This catalog provides information as of January, 2007. Specifications and information herein are subject
to change without notice.

PS No.7451-4/4