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Pn3 Diffeence
De ep tuiode Hegion
the
oHB fun chon of to)
Vps<2 ( Vss-Vru)
and the
polyilicon qate
silicon ubsts1ate. RoN
Anox ) Vg-Vr)
F oFo PMOS
electmon chaHqe
Nsub Doping comentuahon
7Hansconduetance ( )
ohage in the
dep Satunati om
deple tion Hegion
p Cox() Vs-Vru)
oxide capaeitane
Cox Gate
uniE atea 6.9f F/um VS-VTH
p conk tant
d i e l e ctHic
si ofsilicon 2p,o()p
tox 5o A. Cr deep taiode
3) Ron
) C v Hegion
(1+A Vos)
CLM
1 ) Deep tHiode:
PB with CL
C juneion- wal! capautane
duu to bettom of the junchon AJo
(pe unit avea)
siqnalmodel:
Cjw sidt- wal! capati tan e du b |28 Smal
with Body effect
the peimet e of he junthon
p unit ength)
3) Cpe CsB
39 F/
E C + 2(w+ E) Cyws tox
pesy
a H ea
Pey
penimeteY ungth
unit
3) YoutVop-Ip Ro (lo sat)
83 Vout Vpo KoN Clo taiode
Cap CCa(VasYTH)
CItC2 Cut off
RoN tRD
L Cox VDD
C
Vour
C ot
q Es Naub/ 40
Cpe f( Vp8) 34) qain9m p
Cs8f(Vse)
18)_Voltaqe qain induding
tRtH%m19mb)R
-2To Vep
V4D-Vr
3 gain including
CLM
Rout (gnt9mi)K,%
Ro YRs t , t
wih kout
qain
Vout 9 94oRp
op 44)Vottaq
HotRp
Vin
s
-
smKout
38) Az -J2p,or(p duain tage:
Com mon
as
VoutVin Vss
ctance
tnank condu
34) EHe cH ve I+ (9mtmbRs
m b r a n s t o n d u c t a n e e
Iy 9m
Iy
output lmpe dance
Rout
4) CS stage with diode
Conne tted loaad
(/L),
gain Ay
-
(wL),
J
48) CS stage with PMOS load
A
Hp (w/
eLM e qlected)
2 nRout CL
2n C
2NCL
2 Rout