BI-DIRECTIONAL DIAC

DB3 & DB4 Series

SPECIFICATIONS
Parameters Symbol *(DMM)DB3 *(DMM)DB4 Units
28 35 V min
Breakover Voltage V(BR)1, V(BR)2 32 40 V typ
36 45 V max
Breakover Voltage Symmetry |V(BR)1|-|V(BR)2| 3 3 V max
Dynamic Breakback Voltage I±V DI 5 5 V max
Breakover Current I(BR)1 AND I(BR)2 50 50 mA max
Peak Pulse Current for IP 2.0 2.0 A max
10ms, 120pps, TA£4°C
* DMMDB3 & DMMDB4 are DL-35 (mini-MELF).
DB3 & DB4 are DO-35.
DIMENSIONS
MINI-MELF Drawing (mm)
DO-35 Glass Case Outline Drawing (mm)
Cathode 2.0 Max Cathode Mark
f0.52
1.35±0.05
A A
4.2 Max 0.3±0.1 3.3±0.1 0.3±0.1

CURVES
V-I Characteristics
CURRENT Repetitive Peak On-State
Current vs Pulse Duration Test Circuit
Breakover 1.0
Voltage RF
Pulse repetition rate = 120PPS D.U.T.
Tz= 40°C VC
120V
D28 32 35 40 50 RMS 200W
0.1 60Hz 1%
D60 0.1mF

Safe Operating Area

-Vbo VOLTAGE Adjust for one firing in half cycle
0.01
+Vbo
Breakover
Current

0.001
10 100 1000 10000
Ibo

PART NUMBER EXAMPLE

Normalized VBO Change
vs Junction Temperature Test Circuit Waveforms DMM DB3 R
+8
+6 D28 32 35 40 50 +V(80) Packaging
V+ R - Tape & Reel
+4 A - Tape & Ammo
0 t
D60 B - Bulk Packaging
+2
V- Series
-V(80) DM3 for 32 volts.
0
DM4 for 40 volts.
-2 Surface mount.
+IP
Omit for thru hole.
-4
0 t
-6
-8 -IP
-40 -20 0 +20 +40 +60 +80 +100 +120 +140

C3CC03
RFE International • Tel:(949) 833-1988 • Fax:(949) 833-1788 • E-Mail Sales@rfeinc.com
REV 2001