UNISONIC TECHNOLOGIES CO.

, LTD
UT100N03 Power MOSFET

100A, 30V N-CHANNEL

POWER MOSFET
1 1
TO-220 TO-220F
 DESCRIPTION
The UT100N03 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation with
1 1
low gate voltages. This device is suitable for use as a load
switch or in PWM applications. TO-251 TO-252

1
 FEATURES
1
TO-220
* RDS(ON) ≤ 4.6 mΩ @ VGS=10 V, ID=50A TO-252D DFN5060-8
* RDS(ON) ≤ 6.0 mΩ @ VGS=4.5 V, ID=40A

TO-220F/TO-251/TO-252/TO-252D/TO-263
* RDS(ON) ≤ 5.3 mΩ @ VGS=10 V, ID=50A 1
* RDS(ON) ≤ 8.0 mΩ @ VGS=4.5 V, ID=40A TO-263

DFN5060-8
* RDS(ON) ≤ 4.0 mΩ @ VGS=10 V, ID=50A
* RDS(ON) ≤ 5.8 mΩ @ VGS=4.5 V, ID=40A

 SYMBOL
Drain

Gate

Source

www.unisonic.com.tw 1 of 7
Copyright © 2020 Unisonic Technologies Co., Ltd QW-R502-193.J
UT100N03 Power MOSFET

 ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3 4 5 6 7 8
UT100N03L-TA3-T UT100N03G-TA3-T TO-220 G D S - - - - - Tube
UT100N03L-TF3-T UT100N03G-TF3-T TO-220F G D S - - - - - Tube
UT100N03L-TM3-T UT100N03G-TM3-T TO-251 G D S - - - - - Tube
UT100N03L-TN3-R UT100N03G-TN3-R TO-252 G D S - - - - - Tape Reel
UT100N03L-TND-R UT100N03G-TND-R TO-252D G D S - - - - - Tape Reel
UT100N03L-TQ2-T UT100N03G-TQ2-T TO-263 G D S - - - - - Tube
UT100N03L-TQ2-R UT100N03G-TQ2-R TO-263 G D S - - - - - Tape Reel
UT100N03L-K08-5060-R UT100N03G-K08-5060-R DFN5060-8 S S S G D D D D Tape Reel
Note: Pin Assignment: G: Gate D: Drain S: Source

UT100N03G-TA3-T (1) T: Tube, R: Tape Reel

(1)Packing Type
(2) TA3: TO-220, TF3: TO-220F, TM3: TO-251,
(2)Package Type (2) TN3: TO-252, TND: TO-252D, TQ2: TO-263,
(2) K08-5060: DFN5060-8
(3)Green Package
(3) G: Halogen Free and Lead Free, L: Lead Free

 MARKING
TO-220 / TO-220F / TO-251
DFN5060-8
TO-252 / TO-252D / TO-263

UTC UTC UT
UT100N03 L: Lead Free
G: Halogen Free 100N03
Lot Code Date Code
Lot Code Date Code
1

UNISONIC TECHNOLOGIES CO., LTD 2 of 8

www.unisonic.com.tw QW-R502-193.J
UT100N03 Power MOSFET

 ABSOLUTE MAXIMUM RATINGS (TC =25°С, unless otherwise specified)

PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDSS 30 V
Gate-Source Voltage VGSS ±20 V
Continuous Drain Current ID 100 A
Pulsed Drain Current (Note 2) IDM 400 A
Single Pulsed Avalanche Current (Note 3) IAS 35 A
Single Pulsed Avalanche Energy (Note 3) EAS 875 mJ
TO-220/TO-263 100 W
TO-220F 36 W
Power Dissipation TO-251/TO-252 PD
50 W
TO-252D
DFN5060-8 21 W
Junction Temperature TJ +175 °С
Strong Temperature TSTG -55 ~ +175 °С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by maximum junction temperature
3. L = 0.5mH, IAS = 35A, VDD = 25V, RG = 25Ω, Starting TJ = 25°С.
 THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
TO-220/TO-220F
62.5 °С/W
TO-263
Junction to Ambient TO-251/TO-252 θJA
110 °С/W
TO-252D
DFN5060-8 40.3 (Note 1, 2) °С/W
TO-220/TO-263 1.5 °С/W
TO-220F 3.47 °С/W
Junction to Case TO-251/TO-252 θJC
3 °С/W
TO-252D
DFN5060-8 6 (Note 1, 2) °С/W
Notes: 1. Maximum under Steady State conditions is 90 °C/W.
2. Surface Mounted on 1" x 1" FR4 board.

UNISONIC TECHNOLOGIES CO., LTD 3 of 8

www.unisonic.com.tw QW-R502-193.J
UT100N03 Power MOSFET

 ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 30 V
Drain-Source Leakage Current IDSS VDS=30V, VGS=0V 1 µA
Gate-Source Leakage Current IGSS VDS=0V, VGS=±20V ±100 nA
ON CHARACTERISTICS(Note2)
Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 1.0 3.0 V
VGS=10V, ID=50A 3.6 4.6 mΩ
TO-220
VGS=4.5V, ID=40A 4.4 6.0 mΩ
TO-220F
VGS=10V, ID=50A 3.05 5.3 mΩ
TO-251
Static Drain-Source
TO-252 RDS(ON)
On-Resistance
TO-252D VGS=4.5V, ID=40A 4.2 8.0 mΩ
TO-263
VGS=10V, ID=50A 3.0 4.0 mΩ
DFN5060-8
VGS=4.5V, ID=40A 4.2 5.8 mΩ
DYNAMIC PARAMETERS(Note3)
Input Capacitance CISS 4900
Output Capacitance COSS VDS=15V, VGS=0V, f=1.0MHz 1040 pF
Reverse Transfer Capacitance CRSS 900
SWITCHING PARAMETERS(Note3)
Total Gate Charge QG 65
Gate Source Charge QGS VDS=15V, VGS=5V, ID =16A 10 nC
Gate Drain Charge QGD 27
Turn-ON Delay Time tD(ON) 40
Turn-ON Rise Time tR VDD=15V, ID=16A, RG=6Ω 37
ns
Turn-OFF Delay Time tD(OFF) VGS=10V 132
Turn-OFF Fall-Time tF 65
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Current IS 90 A
Maximum Body-Diode Pulsed Current ISM 180 A
Drain-Source Diode Forward Voltage VSD IS=20A,VGS=0V 1.5 V
Notes: 1. Pulse Test : Pulse Width < 300μs, Duty Cycle < 2%.
2. Guaranteed by design, not subject to production testing.

UNISONIC TECHNOLOGIES CO., LTD 4 of 8

www.unisonic.com.tw QW-R502-193.J
UT100N03 Power MOSFET

 TEST CIRCUIT AND WAVEFORM

Switching Time Test Circuit Switching Waveforms

VIN VDS
ton toff
tr tf
RL td(on) td(off)
VOUT
90％ 90％
D
VOUT 10％ 10％
RGE INVERTED
G
VGS S 90％
50％ 50％
10％
VIN
Pulse Width

UNISONIC TECHNOLOGIES CO., LTD 5 of 8

www.unisonic.com.tw QW-R502-193.J
UT100N03 Power MOSFET

 TYPICAL CHARACTERISTICS

Drain Current vs. Drain-Source Drain-Source On-Resistance vs.

Voltage Gate-Source Voltage
120 20
4V Note:
3.5V
1.TA=25°C

Drain-Source On-Resistance,
100
16 2.Pulse test
Drain Current, ID (A)

80

RDS(ON) (mΩ)
VGS=5~10V 12
60 ID=60A
120A
Note: 8
40 1.TA=25°C
2.Pulse test 3V 4
20

0 0
0 0.4 0.8 1.2 1.6 2 2 4 6 8 10
Drain-Source Voltage, VDS (V) Gate-Source Voltage, VGS (V)

Gate Charge Characteristics Capacitance Characteristics

12 10000
VDS=15V
CISS
Gate-Source Voltage, VGS (V)

VGS=10V
10
ID=16A
Capacitance, C (pF)

Pulsed
8

6 1000 COSS

4 CRSS

0 100
0 20 40 60 80 100 120 0 10 20 30
Total Gate Charge, QG (nC) Drain-Source Voltage, VDS (V)

Drain-Source On-Resistance vs. Drain-Source On-Resistance vs.

Junction Temperature Junction Temperature
6 7
VGS=10V VGS=4.5V
ID=50A ID=40A
Drain-Source On-Resistance,
Drain-Source On-Resistance,

Pulsed 6 Pulsed
5
RDS(ON) (mΩ)
RDS(ON) (mΩ)

5
4
4

3
3

2 2
25 50 75 100 125 150 25 50 75 100 125 150

Junction Temperature, TJ (°C) Junction Temperature, TJ (°C)

UNISONIC TECHNOLOGIES CO., LTD 6 of 8

www.unisonic.com.tw QW-R502-193.J
UT100N03 Power MOSFET

 TYPICAL CHARACTERISTICS (Cont.)

Breakdown Voltage vs. Junction Gate Threshold Voltage vs.

Temperature Junction Temperature
1.4 2
ID=0.25mA

Gate Threshold Voltage, VGS(TH) (V)

ID=0.25mA
Drain-Source Breakdown Voltage

Pulsed Pulsed

1.2 1.5
Normalized

1 1

0.8 0.5

0.6 0
25 50 75 100 125 150 25 50 75 100 125 150

Junction Temperature, TJ (°C) Junction Temperature, TJ (°C)

Source Current vs. Source-Drain Drain Current vs. Gate-Source

Voltage Voltage
100
TA=25°C
100
TA=150°C Pulsed
80
Source Current, IS (A)

25°C
Drain Current, ID (A)

10 60

40
1
20

0.1 0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0 1 2 3 4 5
Source-Drain Voltage, VSD (V) Gate-Source Voltage, VGS (V)

Drain-Source On-Resistance vs. Power Dissipation vs. Junction

Drain Current Temperature
4 25
TA=25°C DFN5060-8
VGS=10V
Drain-Source On-Resistance,

Power Dissipation, PD (W)

Pulsed 20
3.5
RDS(ON) (mΩ)

15
3
10

2.5
5

2 0
0 20 40 60 80 100 120 0 25 50 75 100 125 150

Drain Current, ID (A) Junction Temperature, TJ (°C)

UNISONIC TECHNOLOGIES CO., LTD 7 of 8

www.unisonic.com.tw QW-R502-193.J
UT100N03 Power MOSFET

 TYPICAL CHARACTERISTICS (Cont.)

Drain Current vs. Junction

Temperature Safe Operating Area
120
DFN5060-8
MAX
Operation in
100 this area is 100us

Drain Current, ID (A)

Drain Current, ID (A)

limited by
80 RDS(ON) 1ms

10
10

m
s
DC
40
1
TJ=150°C
TC=25°C
Single Pulse
0 0.1
25 50 75 100 125 150 0.01 0.1 1 10 100
Junction Temperature, TJ (°C) Drain-Source Voltage, VDS (V)

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein .
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.

UNISONIC TECHNOLOGIES CO., LTD 8 of 8

www.unisonic.com.tw QW-R502-193.J