IDD/M.

Tech Electrical Engineering

Mid semester Exam 2021-22
Advanced Power Electronics (EE-525/535)
Time: 24 Hrs. Max. Marks: 40

Attempt all the questions

1. (i) Though Silicon carbide is a wide band gap material, Silicon carbide Schottky diodes are
becoming popular over Silicon diodes. Why?
(ii) Among Gallium Nitride and Silicon carbide, which do you think is more viable solution
for high voltage power devices and Why? Also compare their benefits and limitations.
[2½+2½]
2. Describe the switching principle of SiC Cascode device. What is the usefulness of 4th
terminal in this device? Using neat waveforms comment on the switching speed and
Electromagnetic interference when the device acts as
(a) Normally-On device
(b) Normally-Off device [2+1+2]
3. How the THD standards are governed by the stiffness of the line. Discuss in detail the
operating principle of Single phase Buck-Boost Power factor correction circuit (PFC). Why
second harmonics components are observed in this converter and how it could be
mitigated. [1+2+2]
4. Describe the working of bridgeless boost PFC. Why input voltage and inductor current
sensing is difficult in this converter? What modification is required in the topology to
overcome this problem? [2+2+1]
5. Justify the transfer function of a Boost converter is of
(a) First order under discontinuous conduction mode
(b) Second order under continuous conduction mode
Also explain their impact on the stability of the converter. [2+2+1]
6. For a three phase controlled rectifier shown in Figure below, prove that the displacement
power factor is given by

where, α is the firing angle and

u is the commutation interval
7. For a 24-pulse rectifier, show that primary side line current cancels certain order of
harmonics. Using THD versus load current characteristic, explain their impact on input
current THD - with and without line inductance. [3+2]
8. Explain the connection and phasor diagram for ∆/Z-2 phase shifting Transformer. Prove
that the turns ratio on the primary side (N1) and secondary side (N2, N3) can be expressed
as

[2½+2½]