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Overview
Overview
1. Forward bias occurs when a voltage is applied across the the solar cell such that the electric
field formed by the P-N junction is decreased. It eases carrier diffusion across the depletion region,
and leads to increased diffusion current.
2. In the presence of an external circuit that continually provides majority carriers,
recombination increases which constantly depletes the influx of carriers into the solar cell. This
increases diffusion and ultimately increases current across the depletion region.
3. Reverse bias occurs when a voltage is applied across the solar cell such that the electric field
formed by the P-N junction is increased. Diffusion current decreases.
The increased diffusion from one side of the junction to the other
causes minority carrier injection at the edge of the depletion region.
These carriers move away from the junction due to diffusion and will
eventually recombine with a majority carrier. The majority carrier is
supplied from the external circuit and hence a net current flows
under forward bias. In the absence of recombination, the minority
carrier concentration would reach a new, higher equilibrium
concentration and the diffusion of carriers from one side of the
junction to the other would cease, much the same as when two
different gasses are introduced. Initially, gas molecules have a net
movement from the high carrier concentration to the low carrier
concentration region, but when a uniform concentration is reached,
there is no longer a net gas molecule movement. In a semiconductor
however, the injected minority carriers recombine and thus more
carriers can diffuse across the junction. Consequently, the diffusion
current which flows in forward bias is a recombination current. The
higher the rate of recombination events, the greater the current
which flows across the junction.
The "dark saturation current" (I ) is an extremely important
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Reverse Bias
In reverse bias a voltage is applied across the device such that the
electric field at the junction increases. The higher electric field in the
depletion region decreases the probability that carriers can diffuse
from one side of the junction to the other, hence the diffusion
current decreases. As in forward bias, the drift current is limited by
the number of minority carriers on either side of the p-n junction and
is relatively unchanged by the increased electric field. A small
increase in the drift current is experienced due to the small increase
in the width of the depletion region, but this is essentially a second-
order effect in silicon solar cells. In many thin film solar cells where
the depletion region is around half the thickness of the solar cell the
change in depletion region width with voltage has a large impact on
cell operation.