BAHCESEHIR UNIVERSITY

POWER ELECTRONICS LABORATORY

EXPERIMENT 1: UNCOTROLLED RECTIFIER

AIM OF THE EXPERIMENT

1. Understanding the construction and the operation of a diode.

2. Simulate uncontrolled rectifier by using matlab/simulink

THEORY

The diode is the simplest and most fundamental non linear circuit element. Diode is a device
formed from a junction of n-type and p-type semiconductor material. The lead connected to
the p side is called anode and the lead connected to the n side is called cathode. The
symbol and construction of a diode are given in Figure 1-a, b.

Figure 1-a: Diode symbol

Figure 1-b: Diode construction

General application of the diode is the rectification. Diode is forward biased when anode is
made positive with respect to the cathode. Diode conducts fully when the diode voltage is
more than the threshold voltage (0.7V generally). Diode is reverse biased when cathode is
made positive with respect to anode. When reverse biased, a small reverse current known as
leakage current flows. This leakage current increases with increase in magnitude of reverse
voltage until avalanche voltage is reached (breakdown voltage). If the reverse voltage
exceeds a threshold value called the breakdown voltage, the device goes through avalance

1
BAHCESEHIR UNIVERSITY
POWER ELECTRONICS LABORATORY
breakdown, which is when reverse current becomes large and the diode is destroyed by
heating due to large power dissipation in the junction. Characteristics of a real diode is given
in Figure 2.

Figure 2: Diode V-I characteristics

The forward current in a diode goes to zero if the diode goes from forward biased to reverse
biased. According to the characteristics of a diode, ignoring the leakage current, when
reverse biased there should be no reverse current once the reverse voltage does not exceed
in magnitude to the breakdown voltage. However, in practice, the diode does exhibit a
reverse characteristic for a short space of time due to the free carriers. These minority
carriers require some finite time, the reverse recovery time, to recombine with opposite
charges in order to be neutralized. This time is called the reverse recovery time. The reverse
recovery time trr is measured from the initial zero crossing of the diode current to %25 of
maximum reverse current Irr. Diode reverse recovery time characteristics is given in Figure
3.

2
BAHCESEHIR UNIVERSITY
POWER ELECTRONICS LABORATORY

Figure 3: Diode reverse recovery characteristics

PROCEDURE

1. Do configuration below on matlab/simulink

Parameters

2. Adjust ac voltage source 100 V peak voltage and 50 hz.

3. For diode, adjust forward voltage as 0.8 V and resistance Ron as 0.01 Ω
4. Use 50 Ω for resistive load.

Homework
Now, it is your turn. Create an RL half_wave uncontrolled rectifier by using parameter
below. Show your works (do not forget to show parameters you entered) and results.

1. Ac voltage source paremeters (100V peak / 50 hz)

2. Diode parameter (Vf = 0.8 / Ron= 0.01)

3
BAHCESEHIR UNIVERSITY
POWER ELECTRONICS LABORATORY
3. Resistance parameters (25 Ω)
4. Inductor parameter (47x10^-3)