SM6K2

Transistors

4V Drive Nch+Nch MOS FET

SM6K2

zStructure zExternal dimensions (Unit : mm)

Silicon N-channel SMT6
2.9
MOSFET transistor 1.9
1.1

0.95 0.95 0.8

(4) (5) (6)

zFeatures

1.6
2.8
1) Two RHU002N06 chips in a SMT package. (3) (2) (1)

2) Mounting possible with SMT3 automatic mounting machines.

0.3Min.
1pin mark
0.3 0.15
3) Transistor elements are independent, eliminating mutual
interference. Each lead has same dimensions

4) Mounting cost and area can be cut in half. Abbreviated symbol : K2

zPackaging specifications zEquivalent circuit

Package Taping (4) (5) (6)

∗1
Code T110
Type Basic ordering unit (pieces) 3000 ∗2

SM6K2 (1) TR1 Drain

(2) TR2 Gate
∗2 (3) TR2 Source
(4) TR2 Drain
(5) TR1 Gate
(6) TR1 Source
∗1
∗1 Gate Protection Diode
(3) (2) (1) ∗2 Body Diode

∗ A protection diode has been built in between the gate

zAbsolute maximum ratings (Ta=25°C) and the source to protect against static electricity
when the product is in use.
<It is the same ratings for the Tr1 and Tr2.> Use the protection circuit when fixed voltages are exceeded.

Parameter Symbol Limits Unit

Drain-source voltage VDSS 60 V
Gate-source voltage VGSS ±20 V
Continuous ID 200 mA
Drain current ∗1
Pulsed IDP 800 mA
Continuous IDR 200 mA
Drain reverse current ∗1
Pulsed IDRP 800 mA

∗2
300 mW / TOTAL
Total power dissipation PD
200 mW / ELEMENT
Channel temperature Tch 150 °C
Storage temperature Tstg −55 to +150 °C
∗1 Pw≤10µs, Duty cycle≤1%
∗2 With each pin mounted on the recommended lands.

zThermal resistance
Parameter Symbol Limits Unit
∗ 416.7 °C / W / TOTAL
Channel to ambient Rth(ch-a)
625 °C / W / ELEMENT
∗ With each pin mounted on the recommended lands.

Rev.B 1/4
 SM6K2
Transistors

zElectrical characteristics (Ta=25°C)

<It is the same characteristics for the Tr1 and Tr2.>
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Gate leakage current IGSS − − ±10 µA VGS=±20V, VDS=0V
Drain-source breakdown voltage V (BR) DSS 60 − − V ID=1mA, VGS=0V
Drain cutoff current IDSS − − 1 µA VDS=60V, VGS=0V
Gate threshold voltage VGS (th) 1 − 2.5 V VDS=10V, ID=1mA

∗ − 1.7 2.4 ID=200mA, VGS=10V

Drain-source on-state resistance RDS (on) Ω
− 2.8 4.0 ID=200mA, VGS=4V
∗
Forward transfer admittance l Yfs l 0.1 − − S VDS=10V, ID=200mA
Input capacitance Ciss − 15 − pF VDS=10V
Output capacitance Coss − 8 − pF VGS=0V
Reverse transfer capacitance Crss − 4 − pF f=1MHz
∗
Turn-on delay time td (on) − 6 − ns
ID=100mA, VDD 30V
∗ − −
Rise time tr 5 ns VGS=10V
Turn-off delay time td (off) ∗ − 12 − ns RL=300Ω
∗ RG =10Ω
Fall time tf − 95 − ns
∗
Total gate charge Qg − 2.2 4.4 nC VDD 30V
Gate-source charge Qgs ∗ − 0.6 − nC VGS=10V
∗ ID=200mA
Gate-drain charge Qgd − 0.3 − nC
∗ Pulsed

zBody diode characteristics (Source-drain) (Ta=25°C)

<It is the same characteristics for the Tr1 and Tr2.>
Parameter Symbol Min. Typ. Max. Unit Conditions
Forward voltage VSD − − 1.2 V IS=200mA, VGS=0V

Rev.B 2/4
 SM6K2
Transistors

zElectrical characteristic curves

0.8 1 2.5

GATE THRESHOLD VOLTAGE : VGS (th) (V)

10V VDS=10V VDS=10V
Ta=25°C Pulsed ID=1mA
0.7 Pulsed
8V Pulsed
6V 2.0

DRAIN CURRENT : ID (A)

DRAIN CURRENT : ID (A)

0.6
0.1
0.5 Ta=−25°C 1.5
4V 25°C
0.4 75°C
125°C
0.3 1.0
3.5V
0.01
0.2
VGS=3V 0.5
0.1

0.0 0.001 0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 −50 −25 0 25 50 75 100 125 150

DRAIN-SOURCE VOLTAGE : VDS (V) GATE-SOURCE VOLTAGE : VGS (V) CHANNEL TEMPERATURE : Tch (°C)

Fig.1 Typical output characteristics Fig.2 Typical transfer characteristics Fig.3 Gate threshold voltage
vs. channel temperature

10 10 7
VGS=10V VGS=4V
ON-STATE RESISTANCE : RDS (on) (Ω)

Ta=25°C
ON-STATE RESISTANCE : RDS (on) (Ω)

Pulsed Pulsed Pulsed

ON-STATE RESISTANCE : RDS (on) (Ω)

6
Ta=125°C
Ta=125°C 75°C
25°C 5
STATIC DRAIN-SOURCE

75°C
STATIC DRAIN-SOURCE

−25°C
25°C STATIC DRAIN-SOURCE
−25°C 4
ID=200mA
3

2
100mA
1

1.0 1.0
0.01 0.1 1.0 0
0.01 0.1 1.0 0 5 10 15 20
DRAIN CURRENT : I D (A) DRAIN CURRENT : I D (A) GATE-SOURCE VOLTAGE : VGS (V)

Fig.4 Static drain-source on-State Fig.5 Static drain-source on-state Fig.6 Static drain-source on-state
resistance vs. drain current ( Ι ) resistance vs. drain current ( ΙΙ ) resistance vs. gate-source voltage

3.0 1 10
VGS=10V VGS=0V Ta=25°C
REVERSE DRAIN CURRENT : IDR (A)

REVERSE DRAIN CURRENT : IDR (A)

Pulsed Pulsed
ON-STATE RESISTANCE : RDS (on) (Ω)

Pulsed

2.5 1 VGS=10V
0.1
Ta=125°C
STATIC DRAIN-SOURCE

ID=200mA 75°C
2.0 25°C 0.1 0V
−25°C

0.01
100mA
1.5 0.01

1.0 0.001 0.001

−50 −25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2
CHANNEL TEMPERATURE : Tch (°C) SOURCE-DRAIN VOLTAGE : VSD (V) SOURCE-DRAIN VOLTAGE : VSD (V)

Fig.7 Static drain-source on-state Fig.8 Reverse drain current vs. Fig.9 Reverse drain current vs.
resistance vs. channel temperature source-drain voltage ( Ι ) source-drain voltage ( ΙΙ )

Rev.B 3/4
 SM6K2
Transistors

1 100 1000
FORWARD TRANSFER ADMITTANCE : I Yfs I (S)

VGS=10V Ta=25°C Ta=25°C

Pulsed f=1MHz VDD=30V
VGS=0V VGS=10V
RG=10Ω

SWITCHING TIME : t (ns)

tf
Ta=−25°C Pulsed

CAPACITANCE : C (pF)
0.1 25°C 100
Ciss
75°C 10
125°C td(off)
Coss
0.01 10
td(on)
Crss
tr

0.001 1 1
0.001 0.01 0.1 1 0.01 0.1 1 10 100 1 10 100 1000

DRAIN CURRENT : ID (A) DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN CURRENT : ID (mA)

Fig.10 Forward transfer admittance Fig.11 Typical capacitance Fig.12 Switching characteristics
vs. drain current vs. drain-source voltage

zSwitching characteristics measurement circuit

Pulse width

90%
VGS 50% 50%
ID VGS
VDS 10%
D.U.T. RL
RG VDS 10% 10%
VDD
90%
90%
td (on) tr tf
td (off)
ton toff

Fig.13 Switching time test circuit Fig.14 Switching time waveforms

Rev.B 4/4
Appendix

Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1
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