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S21 (dB)
S21 (dB)
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-95 -85
10.5 11.0 11.5 12.0 12.5 13.0 10.0 10.5 11.0 11.5 12.0 12.5 13.0
Frequency (GHz) Frequency (GHz)
Fig. 3. The cavity resonator/antenna response by weak coupling . Fig. 5. Sesnor responses for succesive external pressure by weak coupling.
for the design purpose only and will not appear in the final plotted in Fig. 4. The pressure sensitivity can be improved
sensor structure as presented in Fig. 2(b). To achieve the using thinner top and bottom layers. However, this will also
maximum energy coupling from free space to the resonator limit the dynamic range of the sensor. Using the data from Fig.
through the slot antenna, the unloaded Q factor Qu of the 4, the sensor responses for successive external pressures are
resonator needs to be equal to the radiation Q factor Qrad of the shown in Fig.5. The resonant frequency reduces from 12.55 to
slot antenna [5]. The antenna is designed based on the Qu of 10.50 GHz for the applied pressure ranging from 0 to 100 psi.
195 when the air gap value is g = 10 µm. The slot length La and This corresponds to a sensitivity of 20 MHz/psi.
position d are analyzed by parametric sweep in the Ansoft High
Frequency Structure Simulator (HFSS). During the simulation, IV. CONCLUSION
the slot width Wa is fixed to 0.2 mm. Finally, La = 4.5 mm and A wireless passive pressure sensor design is proposed using
d = 0.5 mm are selected to match Qrad with Qu. The simulated an evanescent-mode cavity resonator seamlessly integrated
S21 corresponding to the two weakly-coupled coaxial ports is with a slot antenna at X band. By loading the resonator with a
shown in Fig. 3. From this figure, loaded Q factor QL of 98.4 is capacitive post the sensor has high pressure sensitivity. In
evident, which is consistent with the antenna design with addition, the seamlessly integrated antenna results in a compact
critical coupling requirement. The designed sensor/antenna has size compared with the previously reported solutions. The
a compact volume of 7×7×0.75 mm3. proposed technology can have wide usage in implanted
applications in need of low-profile wireless passive pressure
This pressure sensor can be realized by two hermetic
sensors. Future reports will present the wireless measurement
bonded silicon wafers. Wave attenuation is decreased by using
of the device.
high-resistivity silicon at the top of the cavity. The cavity
bottom can be fabricated by two-step anisotropic etching of ACKNOWLEDGMENT
silicon.
The authors acknowledge the support of this research by
III. MECHANICAL SIMULATION National Science Foundation under Grant ECCS 0823950 and
US Department of Energy under Grant DE-FE0001241.
Both sensor top and bottom layers have deflections for an
applied external pressure, which reduce the air gap and the REFERENCES
sensor resonant frequency, accordingly. This mechanical
response can be simulated by ANSYS FEM software. The
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