MJE340

MJE340

High Voltage General Purpose Applications

• High Collector-Emitter Breakdown Voltage
• Suitable for Transformer
• Complement to MJE350

1 TO-126
1. Emitter 2.Collector 3.Base

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage 300 V
VCEO Collector-Emitter Voltage 300 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current 500 mA
PC Collector Dissipation (TC=25°C) 20 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C

Electrical Characteristics TC=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Max. Units
BVCEO Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0 300 V
ICBO Collector Cut-off Current VCB = 300V, IE =0 100 µA
IEBO Emitter Cut-off Current VBE = 3V, IC = 0 100 µA
hFE DC Current Gain VCE = 10V, IC = 50mA 30 240

©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001

 MJE340
Typical Characteristics

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

1000

VCE = 2V 1.2 IC = 10IB

1.0
hFE, DC CURRENT GAIN

100
0.8
V BE(sat)

0.6

V CE(sat)
10 0.4

0.2

1 0.0
1 10 100 1000 10 100 1000

IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT

Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

10 32

28
PC[W], POWER DISSIPATION
IC[A], COLLECTOR CURRENT

24

1
10

20
µs
50
0µs
1m

DC 16
s

12
0.1

0.01 0
1 10 100 0 25 50 75 100 125 150 175

VCE [V], COLLECTOR-EMITTER VOLTAGE o

Tc[ C], CASE TEMPERATURE

Figure 3. Safe Operating Area Figure 4. Power Derating

©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001

 MJE340
Package Demensions

TO-126
±0.10

8.00 ±0.30 3.25 ±0.20

3.90

±0.20
14.20MAX

11.00
ø3.20 ±0.10

(1.00) (0.50)
0.75 ±0.10

1.75 ±0.20
1.60 ±0.10
±0.20
±0.30

0.75 ±0.10
16.10
13.06

#1 +0.10
2.28TYP 2.28TYP 0.50 –0.05
[2.28±0.20] [2.28±0.20]

Dimensions in Millimeters

©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001

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not intended to be an exhaustive list of all such trademarks.

ACEx™ FASTr™ PowerTrench® SyncFET™

Bottomless™ GlobalOptoisolator™ QFET™ TinyLogic™
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CROSSVOLT™ HiSeC™ QT Optoelectronics™ UHC™
DOME™ ISOPLANAR™ Quiet Series™
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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

©2001 Fairchild Semiconductor Corporation Rev. G